袁彩雷

袁彩雷,男,生於新疆,2000年獲得中國科學院固體物理研究所碩士學位,2004年獲得新加坡國立大學博士學位,並在2004年至2007年在新加坡國立大學和新加坡南洋理工大學從事博士後研究工作。專長於納米材料,結構及器件的量子物理特性和套用研究,江西師範大學教授。於2007 年1 月起在江西師範大學理電學院工作。2008 年7 月-2009 年2 月在澳大利亞國立大學電子材料工程系訪問。目前的主要研究方向為納米晶的製備,及其電學,光學和磁學特性的研究,在SCI 期刊上發表論文30 多篇,SCI 引用200 多次。

基本介紹

  • 中文名:袁彩雷
  • 出生地:新疆
  • 畢業院校新加坡國立大學
  • 研究方向:嵌入式固態矩陣和其電學
研究方向,研究生培養,講授課程,科研課題,論文代表作,

研究方向

1 (或核/殼結構納米晶)嵌入式固態矩陣和其電學,光學和磁學性質
2 超薄稀土介質存儲器,邏輯和模擬設備套用技術
3 半金屬鐵磁體和鈣鈦礦錳氧化物

研究生培養

碩士研究生
年級
姓名
在讀
2006
吳閏生
2006
王偉
2007
儲建根

講授課程

序號
課程名稱
授課對象
1
原子物理學
學位課
2
半導體物理學
學位課
3
固體物理學
學位課

科研課題

Formation of nanocrystals (or nanocrystals with core/shell structure) and applications for photonics, floating gate and magnetic memory
2008, Australian Research Council Discovery Project, DP0881466
Chief investigator: C. L. Yuan

論文代表作

近5年發表論文:
1. Preparation and photoluminescence properties of Ge nanocrystals embedded in SiO2 matrices with Ge-GeOx core-shell structure
R. S. Wu, X. F. Luo, C. L. Yuan, Z. R. Zhang, J. B. Yu
Physica E: Low-dimensional Systems and Nanostructures (In press)
2. Dielectric matrix imposed stress-strain effect on photoluminescence of Ge Nanocrystals
R. S. Wu, X. F. Luo, C. L. Yuan, Z. R. Zhang
Solid. State. Commu. 149, 598 (2009)
3. Preparation and photoluminescence properties of Ge nanocrystals embedded in Lu2O3 matrices with Ge-GeOx core-shell structure
W. Wang, R. S. Wu, C. L. Yuan
Physica B: Condensed Matter 403, 3997 (2008)
4. Synthesis, photoluminescence and charge storage characteristics of isolated silver nanocrystals embedded in Al2O3 gate dielectric
X. F. Luo, C. L. Yuan, Z. R. Zhang
Thin Solid Films 516, 7675 (2008)
5. Enhancement of Photoluminescence of Ge/GeO2 core/shell nanoparticles
C. L. Yuan, P. S. Lee
Europhys. Lett. 83, 47010 (2008)
6. Enhanced charge storage capability of Ge/GeO2 core/shell nanostructure
C. L. Yuan, P. S. Lee
Nanotechnology 19, 355206 (2008)
7. Role of metallic cobalt in room temperature dilute ferromagnetic semiconductor Zn0.95Co0.05O1-δ
Q. Liu, C.L. Gan, C. L. Yuan, G. C. Han
Appl. Phys. Lett. 92, 032501 (2008)
8. Formation, photoluminescence and charge storage characteristics of Au nanocrystals embedded in amorphous Al2O3 matrix
C. L. Yuan, P. S. Lee, S. L. Ye
Europhys. Lett. 80, 67003 (2007)
9. Enhanced photoluminescence of ZnO/Er2O3 core-shell structure nanorods synthesized by pulsed laser deposition
S. Z. Li, C. L. Gan, H. Cai, C. L. Yuan, J. Guo, P. S. Lee, J. Ma
Appl. Phys. Lett. 90, 263106 (2007)
10. Effect of substrate temperature on pulsed laser ablated Zn0.95Co0.05O diluted magnetic semiconducting thin films
Q. Liu, C. L. Yuan, C. L. Gan, G. C. Han
J. Appl. Phys. 101, 073902 (2007)
11. Leakage conduction mechanism of amorphous Lu2O3 high-k dielectric films fabricated by pulsed laser ablation
C. L. Yuan, P. Darmawan, M. Y. Chan, P. S. Lee
Europhys. Lett. 77, 67001 (2007)
12. Al2O3 nanocrystals embedded in amorphous Lu2O3 high-k gate dielectric for floating gate memory application
C. L. Yuan, M. Y. Chan, P. S. Lee, P. Darmawan, Y. Setiawan
Journal of Physics: Conference Series 61, 1312 (2007)
13. Formation of SrTiO3 nanocrystals in amorphous Lu2O3 high-k gate dielectric for floating gate memory application
C. L. Yuan, P. Darmawan, Y. Setiawan P. S. Lee, J. Ma
Appl. Phys. Lett. 89, 043104 (2006)
14. Trap-controlled behaviour in ultrathin Lu2O3 high-k dielectrics
P. Darmawan, C. L. Yuan, P. S. Lee
Solid. State. Commu. 138, 571 (2006)
15. Formation of SiO2 nanocrystals in Lu2O3 high-k dielectric by Pulsed Laser Ablation and application in memory device
C. L. Yuan, P. Darmawan, Y. Setiawan, P. S. Lee
Nanotechnology 17, 3175 (2006)
16. LaAlO3 nanocrystals embedded in amorphous Lu2O3 high-k gate dielectric for floating gate memory application
C. L. Yuan, P. Darmawan, Y. Setiawan, P. S. Lee
Electrochemical and Solid-State Letters, 9, F53 (2006)
17. A simple approach to form Ge nanocrystals embedded in amorphous Lu2O3 high-k gate dielectric by Pulsed Laser Ablation
C. L. Yuan, P. Darmawan, Y. Setiawan, P. S. Lee
Europhys. Lett. 74, 177 (2006)
18. Enhancement of magnetization and curie temperature in Sr2FeMoO6 by Ni doping
L. Chen, C. L. Yuan, J. M. Xue, J. Wang
J. Am. Ceram. Soc. 89, 672 (2006)
19. B-site ordering and magnetic behaviours in Ni-doped double perovskite Sr2FeMoO6
L. Chen, C. L. Yuan, J. M. Xue and J. Wang
J. Phys. D: Appl. Phys. 38 4003 (2005)
20. Phase formation and magnetoresistance of double perovskite Sr2FeMoO6
L. Chen, C. L. Yuan, J. M. Xue, J. Wang
J. Am. Ceram. Soc. 88, 3279 (2005)
21. Mechanically activated synthesis and magnetoresistance of nanocrystalline double perovskite Sr2FeMoO6
L. Chen, C. L. Yuan, J. M. Xue, J. Wang
J. Am. Ceram. Soc. 88, 2635 (2005)
22. Influence of preparation method on SrMoO4 impurity content and magnetotransport properties of double perovskite Sr2FeMoO6 polycrystals
C. L. Yuan, Y. Zhu, P. P. Ong, Z. X. Shen, C. K. Ong
Solid. State. Commu. 129, 551 (2004)
近5年國際會議論文:
1. Al2O3 nanocrystals embedded in amorphous Lu2O3 high-k gate dielectric for floating gate memory application
C. L. Yuan, P. Darmawan, Y. Setiawan, P. S. Lee
International Conference on Nanoscience and Technology (ICN&T), July 30- August 4, 2006, Basel, Switzerland (口頭報告)
2. Rare-earth based ultrathin Lu2O3 for high-k dielectrics.
P. Darmawan, P. S. Chia, C. L. Yuan, P. S. Lee
International Conference on Nanoscience and Technology (ICN&T), July 30- August 4, 2006, Basel, Switzerland (口頭報告)
3. Effects of Ni doping on B-site ordering and magnetic behaviors of double perovskite Sr2FeMoO6
L. Chen, J. Wang, J. M. Xue, C. L. Yuan
3rd International Conference on Materials for Advanced Technologies (ICMAT 2005) & International Union of Materials Research Societies 9th International Conference on Advanced Materials (IUMRS-ICAM 2005), July 2005, Singapore (口頭報告)
4. Magnetic and transport behaviors of Sr2FeMoO6 at high temperatures
C. L. Yuan, J. M. Xue, J. Wang
MRS-S National Conference on Advanced Materials, August 2004, Singapore
5. Phase formation behaviors and magnetoresistance of double perovskite Sr2FeMoO6
L. Chen, C. L. Yuan, J. M. Xue, J. Wang
MRS-S National Conference on Advanced Materials, August 2004, Singapore

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