李菁楨

李菁楨，現任北京工業大學信息學部助理研究員。研究方向為半導體光電探測器模擬（二維材料光電探測器、二類超晶格紅外探測器）、半導體材料計算和電子器件模擬等。

基本介紹

• 中文名：李菁楨
• 畢業院校：蘭州大學、北京大學 

人物經歷

2020.09-至今，北京工業大學信息學部，助理研究員

2018.09-2019.09，哈佛大學工程與套用科學學院（SEAS），訪問學者

2015.09-2020.07，北京大學物理學院 ，凝聚態物理，理學博士

2011.09-2015.07， 蘭州大學物理科學與技術學院，微電子學 ，理學學士

學術成果

1. J. Li, X. Sun, C. Xu, X. Zhang, Y. Pan, M. Ye, Z. Song, R. Quhe, Y. Wang, H. Zhang, Y. Guo, J. Yang, F. Pan, J. Lu, Electrical contacts in monolayer blue phosphorene devices.Nano Res.2018, 4, 1834-1849.
2. J. Li, X. Zhang, G. A. Tritsaris, B. Shi,C. Yang, S. Liu, J. Yang, L. Xu, J. Yang, F. Pan, E. Kaxiras and J. Lu, Monolayer honeycomb borophene: A promising anode material with extremely high capacity for lithium-ion and sodium-ion batteries. Journal of the Electrochemical Society, 2020, 167, 090527.
3. S. Liu *, J. Li *, B. Shi, X. Zhang, Y. Pan, M. Ye, R. Quhe, Y. Wang, H. Zhang, J. Yan, L. Xu, Y. Guo, F. Pan and J. Lu, Gate-tunable interfacial properties of in-plane ML MX₂ 1T′-2H heterojunctions. Journal of Materials Chemistry C 2018, 21, 5651-5661. (*equal contribution)
4. Y. Wang *, J. Li *, J. Xiong, Y. Pan, M. Ye, Y. Guo, H. Zhang, R. Quhe, J. Lu, Does the Dirac cone of germanene exist on metal substrates? Phys. Chem. Chem. Phys. 2016, 18, 19451-19456. (*equal contribution)
5. X. Zhang, Z. Yang, J. Li, Y. Deng, Y. Hou, Y. Mao, J. Lu and R. Ma, Directly imaging the structure–property correlation of perovskites in crystalline microwires. J. Mater. Chem. A, 2019, 7, 13305.
6. X. Zhang, S. Li, J. Li, M. Ye, Z. Song, S. Jin, B. Shi, Y. Pan, J. Yan, Y. Wang, J. Zheng, F. Pan, J. Lu, Absorption and diffusion of lithium on layered InSe. Computational Condensed Matter, 2019, 21, e00404.
7. Y. Wan, J. Xiao, J. Li, X. Fang, K. Zhang, L. Fu, P. Li, Z. Song, H. Zhang, Y. Wang, M. Zhao, J. Lu, N. Tang, G. Ran, X. Zhang, Y. Ye and L. Dai, Epitaxial single-layer MoS₂ on GaN with enhanced valley helicity. Advanced Materials2018, 30, 170388 (1-7).
8. H. Li, J. Tie, J. Li, M. Ye, H. Zhang, X. Zhang, Y. Pan, Y. Wang, R. Quhe, F. Pan, and J. Lu, High-performance sub-10 nm monolayer black phosphorene tunneling transistors. Nano Research, 2018, 5, 2658-2668.
9. Y. Wang, R. Fei, R. Quhe, J. Li, H. Zhang, X. Zhang, B. Shi, L. Xiao, Z. Song, J. Yang, J. Shi, F. Pan, J. Lu, Many-Body Effect and Device Performance Limit of Monolayer InSe. ACS applied materials & interfaces 2018, 27, 23344-23352.