孟憲權，武漢大學物理系碩士研究生畢業，中國科學院半導體研究所博士研究生畢業。95、97、99年三次獲得武漢大學優秀青年教師、優秀導師獎。在國內外刊物發表文章20多篇，申請專利一項，獲得2001年武漢市科技進步一等獎一次。
基本介紹
- 中文名：孟憲權
- 外文名：Xian-Quan Meng
- 國籍：中國
- 民族：漢
- 職稱：博士，教授
- 性別：男
基本信息,主要研究方向,主要成果與歷經,發表的文章,
基本信息
姓名：孟憲權
職稱：博士，副教授
主要研究方向
(1) 半導體量子點雷射器、探測器
(2) 寬禁帶半導體材料及敏感器件
(3) 半導體納米材料
主要成果與歷經
曾主要參加：國家自然科學基金面上項目：“量子點子帶間躍遷紅外雷射器材料和器件研究”，“GaN的離化團束製備及離子注入研究”；《國家重點基礎研究發展規劃》（973）項目：“信息功能材料相關基礎問題”的03課題“應變自組裝量子線、量子點材料”；《國家高技術研究發展計畫》（863）項目：項目名稱：“光泵浦、光通信用自組裝量子點雷射器”，國家自然科學基金重大項目“半導體納米材料的可控、有序生長”等項目。
發表的文章
（1）X. Q. Meng, Z. Q. Chen, P. Jin, et al. Defects around Self-organized Quantum Dots Measured by Slow Positron Beam, Applied Physics Letters 91 (2007), 093510-093512
（2）X. Q. Meng, P. Jin, Z. M. Liang, F. Q. Liu, Z. G. Wang, and Z. Y. Zhang ，Structure and properties of InAs/AlAs quantum dots for broadband emission，J. Appl. Phys. , 108（2010）, 103515-103519
（3）W. J. Liu, X. Q.Meng(corresponding author), Yi Zheng, Wei Xia, Synthesis and photoluminescence properties of ZnO nanorods and nanotubes， Applied Surface Science，257（2010）,677-679
（4）Dong Wang, X. Q. Meng (Corresponding author) et al. Effect of electric field and annealing on the morphology and crystallinity of hydrothermally grown ZnO nanostructures, Physica E 40 (2008) 852
（5）Wei Liu, X. Q. Meng (Corresponding author), H. X. Qiao, and Rui-Hua Xie，Investigation of Electronic Energy Levels in InAs Quantum Dot with Shape of Lens by Using B-Spline Technique，
Journal of Computational and Theoretical Nanoscience Vol.6, 1–5, （2008）
（6）X. Q. Meng, B. Xu, P. Jin, X. L. Ye,etal. Dependence of Optical Properties on the Structure of Self-Organized InAs Quantum Dots Emitting Near 1.3mm, Journal of Crystal Growth 243 (2002) 432-438
（7）X. Q. Meng, P. Jin, B. Xu, et al. A novel line-order of InAs quantum dots on GaAs
Journal of Crystal Growth 241 (2002) 69-73
（8）X. Q. Meng, B. Xu, P. Jin, X. L. Ye et al.Studies of Multi-layer Self-organized Quantum Dots Used as Gain materials Emitting Near 1.3mm The 8th International Conference on Electronic Materials (IUMRS-ICEM2002), June 10-14, 2002 Xi’an, China
（9）X. Q. Meng, W. Zhen, J.P. Guo and X. J. Fan The structural, optical and electrical properties of ZnO and ZnO-Al2O3 thin films produced by dc magnetron sputtering, Appl. Phys. A 70, (2000) 421-424
（10）X. Q. Meng, Zhao Chun, Wang Qiong, et al. Preparation of GaN thin films by reactive Ionized cluster beam technique Chin. Phys. Lett. 16(5) (1999) 367-369
（11）X. Q. Meng, Z. H. Zhang, H. X. Guo A. G. Li. And X. J. Fan Arc discharge synthesizing of carbon nitride, Solid state communications 107(2) (1998) 75-78
（12）X. Q. Meng, X. J. Fan H. X. Guo , A new formula on the thickness of films deposited by planar and cylindrical sputtering, Solid Thin Films 335 (1998) 279-283
（13）X. Q. Meng, P. Jin, B. Xu, C.et al. Self-organized Growth of Quantum Dots in Line Order,The 7th International Conference on Nanometer-Scale Science and Technology (NANO-7/), 2002 Malmö, Sweden.
（14）Peng Jin, X. Q. Meng, et al. Effect of InAs QDs on the Fermi Level Pinning of Undoped-n(+) Type GaAs Surface Studied by Contactless Electroreflectance,J. Appl. Phys.93（7）（2003）4169-4172
（15）Jin Peng, X. Q. Meng, Zhang Zi-Yang, et al. Modulation spectroscopy of GaAs covered by InAs quantum dots Chin. Phys. Lett. 19(7) (2002) 1010-1012
（16）Z.Y. Zhang, X.Q. Meng, P. Jin, et al. A novel application to quantum dot materials¬¬ to the active region of superluminescent diodes J. Crystal. Growth 243, (2002),25
（17） Z.Y. Zhang,Xu Bo, X.Q. Meng, et al. Photoluminescence study of self-assembled InAs/GaAs quantum dots covered by InAlAs and InGaAs combination layer J. Appl. Phys.92,(2002) ,511
（18）鄭 毅,孟憲權,劉文軍,胡 明，不同襯底上氧化鋅納米結構的水熱法製備研究，功能材料（EI） 40卷2009 年第 9 期1486-1489
（19）孟憲權,何 亮, 肖 虎，朱振華，Formation of InAs quantum dots in silicon by ion implantation and subsequent annealing，16屆全國化合物半導體材料微波器件和光電器件學術會議，西安（2010）,352
（20）肖 虎，孟憲權，朱振華，金鵬，劉峰奇，王占國，二次退火製備III-V族半導體量子點，人工晶體學報（EI），39（3）747-750（2010）
(21)國家發明專利，一種無螢光粉的白光LED結構及製備技術（申請號：201110270444.3）(孟憲權，劉義鶴，於勝)
（2）X. Q. Meng, P. Jin, Z. M. Liang, F. Q. Liu, Z. G. Wang, and Z. Y. Zhang ，Structure and properties of InAs/AlAs quantum dots for broadband emission，J. Appl. Phys. , 108（2010）, 103515-103519
（3）W. J. Liu, X. Q.Meng(corresponding author), Yi Zheng, Wei Xia, Synthesis and photoluminescence properties of ZnO nanorods and nanotubes， Applied Surface Science，257（2010）,677-679
（4）Dong Wang, X. Q. Meng (Corresponding author) et al. Effect of electric field and annealing on the morphology and crystallinity of hydrothermally grown ZnO nanostructures, Physica E 40 (2008) 852
（5）Wei Liu, X. Q. Meng (Corresponding author), H. X. Qiao, and Rui-Hua Xie，Investigation of Electronic Energy Levels in InAs Quantum Dot with Shape of Lens by Using B-Spline Technique，
Journal of Computational and Theoretical Nanoscience Vol.6, 1–5, （2008）
（6）X. Q. Meng, B. Xu, P. Jin, X. L. Ye,etal. Dependence of Optical Properties on the Structure of Self-Organized InAs Quantum Dots Emitting Near 1.3mm, Journal of Crystal Growth 243 (2002) 432-438
（7）X. Q. Meng, P. Jin, B. Xu, et al. A novel line-order of InAs quantum dots on GaAs
Journal of Crystal Growth 241 (2002) 69-73
（8）X. Q. Meng, B. Xu, P. Jin, X. L. Ye et al.Studies of Multi-layer Self-organized Quantum Dots Used as Gain materials Emitting Near 1.3mm The 8th International Conference on Electronic Materials (IUMRS-ICEM2002), June 10-14, 2002 Xi’an, China
（9）X. Q. Meng, W. Zhen, J.P. Guo and X. J. Fan The structural, optical and electrical properties of ZnO and ZnO-Al2O3 thin films produced by dc magnetron sputtering, Appl. Phys. A 70, (2000) 421-424
（10）X. Q. Meng, Zhao Chun, Wang Qiong, et al. Preparation of GaN thin films by reactive Ionized cluster beam technique Chin. Phys. Lett. 16(5) (1999) 367-369
（11）X. Q. Meng, Z. H. Zhang, H. X. Guo A. G. Li. And X. J. Fan Arc discharge synthesizing of carbon nitride, Solid state communications 107(2) (1998) 75-78
（12）X. Q. Meng, X. J. Fan H. X. Guo , A new formula on the thickness of films deposited by planar and cylindrical sputtering, Solid Thin Films 335 (1998) 279-283
（13）X. Q. Meng, P. Jin, B. Xu, C.et al. Self-organized Growth of Quantum Dots in Line Order,The 7th International Conference on Nanometer-Scale Science and Technology (NANO-7/), 2002 Malmö, Sweden.
（14）Peng Jin, X. Q. Meng, et al. Effect of InAs QDs on the Fermi Level Pinning of Undoped-n(+) Type GaAs Surface Studied by Contactless Electroreflectance,J. Appl. Phys.93（7）（2003）4169-4172
（15）Jin Peng, X. Q. Meng, Zhang Zi-Yang, et al. Modulation spectroscopy of GaAs covered by InAs quantum dots Chin. Phys. Lett. 19(7) (2002) 1010-1012
（16）Z.Y. Zhang, X.Q. Meng, P. Jin, et al. A novel application to quantum dot materials¬¬ to the active region of superluminescent diodes J. Crystal. Growth 243, (2002),25
（17） Z.Y. Zhang,Xu Bo, X.Q. Meng, et al. Photoluminescence study of self-assembled InAs/GaAs quantum dots covered by InAlAs and InGaAs combination layer J. Appl. Phys.92,(2002) ,511
（18）鄭 毅,孟憲權,劉文軍,胡 明，不同襯底上氧化鋅納米結構的水熱法製備研究，功能材料（EI） 40卷2009 年第 9 期1486-1489
（19）孟憲權,何 亮, 肖 虎，朱振華，Formation of InAs quantum dots in silicon by ion implantation and subsequent annealing，16屆全國化合物半導體材料微波器件和光電器件學術會議，西安（2010）,352
（20）肖 虎，孟憲權，朱振華，金鵬，劉峰奇，王占國，二次退火製備III-V族半導體量子點，人工晶體學報（EI），39（3）747-750（2010）
(21)國家發明專利，一種無螢光粉的白光LED結構及製備技術（申請號：201110270444.3）(孟憲權，劉義鶴，於勝)
