夏從新

夏從新，男，漢族，1979年10月，河南永城人。副教授，碩士生導師。2004年6月畢業於河南師範大學物理與信息工程學院，獲碩士學位，留校從事教學和科研工作。2007年7月晉升講師，2010年11月破格晉升副教授。

基本介紹

• 中文名：夏從新
• 國籍：中國
• 民族：漢族
• 出生日期：1979年10月
• 職業：教學工作

教學工作

主要承擔《固體物理》（春季），《普通物理》（秋季）灑凶閥的本科生蜜戰晚教學工作。

研究領域

主要從事半導體光電子學及器件的理論研究和設計。迄今為止，已在J.Appl.Phys 和J.Opt.Soc .Am.B等SCI源期刊上發表論文40餘嘗碑篇。近期研究興趣：

（1）寬頻隙半導體材料中光電性質的理論研究。

（2）III族氮化物半導體基光電子器件的理論模擬和槳遙只海設計。

（3）低維半導體結構的量子調控。

（4）高效太陽能電艱擔譽池材料的理論愉欠定霸模擬。

科研項目

主持國家自然科學基金項目“GaN基量櫃潤放子結構的非線性光學性質”[批准號：60906044，22萬，2010.1—2012.12]。

代表文章

[1] Electric field effects on optical properties in zinc-blende InGaN/GaN quantum dot

Congxin Xia, Zaiping Zeng, Shuyi Wei

Journal of Luminscence, 131(2011)623.

[2]Effects of laser field and electric field on impurity states in zinc-blende GaN/AlGaN quantum well

Congxin Xia, Yanping Zhu, Shuyi Wei

Physics Letters A 375 (2011) 2652

[3]Nonlinear Franz-Keldysh effect: two photon absorption in a semiconducting quantum well

Congxin Xia, H. N. Spector

Journal of the Optical Society of America B 27 (2010) 1571.

[4]Electron and impurity states in GaN/AlGaN coupled quantum dots: Effects of electric field and hydrostatic pressure

Congxin Xia, Zaiping Zeng, Shuyi Wei

Journal of Applied Physics 108 (2010) 054307.

[5]Shallow-donor impurity in zinc-blende InGaN/GaN asymmetric coupled quantum dots: effect of electric field

Congxin Xia, Zaiping Zeng, Shuyi Wei

Journal of Applied Physics 107 (2010) 054305.

[6]Effects of applied electric field and hydrostatic pressure on donor impurity states in cylindrical GaN/AlN quantum dot

Congxin Xia, Zaiping Zeng, Shuyi Wei

Journal of Applied Physics 107(2010)014305

[7] Nonlinear Franz-Keldysh effect: two photon absorption in semiconducting quantum wires and quantum boxes

Congxin Xia, H. N.Spector

Journal of Applied Physics 106 (2009)124302/1-6.

(selected for the Vo1.21,No.1 of Virtual Journal of Nanoscale Science & Technology)

[8] Franz-Keldy effect in the interband optical absorption of semiconducting nanostructures

Congxin Xia, H. N.Spector

Journal of Applied Physics 105 (2009) 084313.

[9] Barrier width dependence of the donor binding energy of hydrogenic impurity in wurtzite InGaN/GaN quantum dot

Congxin Xia, Zaiping Zeng, Shuyi Wei

Journal of Applied Physics 106 (2009) 094301.

[10]Electric field effect on the donor impurity states in zinc-blende symmetric InGaN/GaN coupled quantum dots

Congxin Xia, Zaiping Zeng, Shuyi Wei

Physics Letters A 374 (2009) 97.

Congxin Xia, Zaiping Zeng, Shuyi Wei

Journal of Applied Physics 107 (2010) 054305.

[6]Effects of applied electric field and hydrostatic pressure on donor impurity states in cylindrical GaN/AlN quantum dot

Congxin Xia, Zaiping Zeng, Shuyi Wei

Journal of Applied Physics 107(2010)014305

[7] Nonlinear Franz-Keldysh effect: two photon absorption in semiconducting quantum wires and quantum boxes

Congxin Xia, H. N.Spector

Journal of Applied Physics 106 (2009)124302/1-6.

(selected for the Vo1.21,No.1 of Virtual Journal of Nanoscale Science & Technology)

[8] Franz-Keldy effect in the interband optical absorption of semiconducting nanostructures

Congxin Xia, H. N.Spector

Journal of Applied Physics 105 (2009) 084313.

[9] Barrier width dependence of the donor binding energy of hydrogenic impurity in wurtzite InGaN/GaN quantum dot

Congxin Xia, Zaiping Zeng, Shuyi Wei

Journal of Applied Physics 106 (2009) 094301.

[10]Electric field effect on the donor impurity states in zinc-blende symmetric InGaN/GaN coupled quantum dots

Congxin Xia, Zaiping Zeng, Shuyi Wei

Physics Letters A 374 (2009) 97.