劉揚(中山大學電子與信息工程學院教授)

劉揚，男，博士，中山大學電子與信息工程學院教授、博士生導師，中山大學電力電子及控制技術研究所所長、廣東省第三代半導體GaN材料與器件工程技術研究中心主任。2001年在國際著名異質材料外延技術先端研發機構--日本名古屋工業大學從事氮化鎵(GaN)材料和器件研究工作，期間被聘為日本學術振興會(JSPS)外國人特別研究員。2007年歸國，以“百人計畫”教授身份加盟中山大學，負責組建國內首家GaN功率電子材料與器件研發平台，開展關鍵技術的研究，同時積極聯合國內龍頭企業，促進產學研結合，整合產業鏈條，推動大尺寸Si襯底GaN功率電子材料與器件產業技術的開發。先後承擔國家科技部、國家自然基金委、廣東省科技計畫項目多項。2014年末該研發平台被廣東省科技廳認證為廣東省第三代半導體GaN電力電子材料與器件工程技術研發中心。2017年劉揚教授入選國際功率半導體業界權威會議組織IEEE ISPSD 技術委員會（International Symposium on Power Semiconductor Devices & ICs，Technical Program Committee (TPC) Member），成為中國大陸GaN領域進入該學術組織的第一人。

基本介紹

  • 中文名：劉揚
  • 畢業院校：吉林大學
  • 學位/學歷：博士
  • 專業方向：微電子學與固體電子學
  • 任職院校：中山大學
人物經歷,學術兼職,教育經歷,授課課程,研究方向,學術成果,科研項目,科研成果,

人物經歷

學術兼職

1. IEEE ISPSD（ International Symposium on Power Semiconductor Devices & ICs），Technical Program Committee (TPC) Member）
2. IEEE EDS (Electron Devices Society) Power Devices and ICs Committee Member
3. 中國電源學會理事
4. 中國電工學會電力電子學會理事
5. 中國電源學會元器件專業委員會委員
6. 中國寬禁帶功率半導體產業聯盟專家委員會GaN器件組成員
7. 中國有色金屬學會寬禁帶半導體專業委員會委員
8.《電力電子技術》雜誌編輯委會委員
9. 2017年《電力電子技術》“寬禁帶半導體電力電子器件”專輯特邀主編
10. 2019年《電源學報》“GaN功率電子器件及套用”專輯特邀主編

教育經歷

博士（2000年），吉林大學微電子學與固體電子學專業
學士（1991年）碩士（1994年）吉林大學半導體物理與半導體器件物理專業

授課課程

本科:《微電子學導論》《半導體物理導論》《基礎物理實驗課》
研究生：《寬禁帶半導體材料與器件》

研究方向

主要從事寬禁帶III族氮化物（GaN）功率半導體材料與器件研究，包括：
GaN器件製備及材料物性研究
GaN功率半導體器件及物理器件製備
GaN功率器件穩定性、可靠性機理研究
GaN功率器件驅動及單片功率集成技術的研究
新型GaN電力電子器件在電源管理、光伏逆變、電機驅動等方向的系統集成技術研究

學術成果

科研項目

主持承擔了國家重點研發計畫課題項目、國家自然基金面上及重點項目、國家科技部國際合作項目、省重大科技項目、省自然基金團隊、省國際合作項目十餘項。目前在研項目有：
1. 國家重點研發計畫課題項目，主持
2. 國家自然科學基金聯合基金重點項目，主持
3. 廣東省套用型科技研發專項資金項目，主持
4. 廣東省自然科學基金團隊項目，主持

科研成果

  1. L.A. Li, W.J. Wang, L. He, X.R Zhang , Z.S Wu,Yang Liu*，Determination of band offsets between p-NiO gate electrode and unintentionally doped GaN for normally-off GaN power device,Journal of Alloys and Compounds,Vol.728, p400-403, 2017.09
  2. L. He, L.A. Li, Y. Zheng, F. Yang, Z. Shen, Z. J. Chen, W.J. Wang, J. l. Zhang, X. R. Zhang, L. He, Z.S Wu, B.J. Zhang,Yang Liu*, The Influence of Al composition in AlGaN back barrier layer on leakage current and dynamic RONcharacteristics of AlGaN/GaN HEMTs,Physica Status Solidi A, Vol.214,No.8, p1600824, 2017.08
  3. L.A. Li, W.J. Wang, L. He, J. L. Zhang, Z.S Wu, B.J. Zhang,Yang Liu*, Synthesis and characterization of p-type NiO films suitable for normally-off AlGaN/GaN HFETs application,Materials Science in Semiconductor Processing, Vol.67, p141-146, 2017.08
  4. Z. J. Chen, L.A. Li, Z.Y. He, F. Yang, L. He, Z.S Wu, B.J. Zhang,Yang Liu*, Enhanced voltage blocking ability of AlGaN/GaN HFETs-on-Si by eliminating leakage path introduced by LT-AlN interlayers,Japanese Journal of Applied Physics,Vol.56, No.6,p065503, 2017.06
  5. L. He, F. Yang, L.A. Li, Z. J. Chen, Z. Shen, Y. Zheng, Y. Yao , Y.Q. Ni, D.Q. Zhou, X.R Zhang, L. He, Z.S Wu, B.J. Zhang,Yang Liu*, High Threshold Voltage Uniformity and Low Hysteresis Recessed Gate Al2O3/AlN/GaN MISFET by Selective Area Growth,IEEE Transactions on Electron Devices, VOL. 64, NO. 4, p1554-1560, 2017.04
  6. Z. Shen, L. He, G.L. Zhou, Y. Yao, F. Yang, Y.Q. Ni, Y. Zheng, D.Q. Zhou, J.P. Ao , B.J. Zhang,Yang Liu*, Investigation of O3-Al2O3/H2O-Al2O3dielectric bilayer deposited by atomic-layer deposition for GaN MOS capacitors,physica status solidi (a), Vol.213, No.10, pp 2693-8, 2016.10
  7. Y. Zheng, F. Yang, L. He, Y. Yao, Z. Shen, G.L. Zhou, Z.Y. He, Y.Q. Ni, D. Q.Zhou, J. Zhong, X. R. Zhang, L. He, Z. S. Wu, B. J. Zhang,Yang. Liu*, Selective Area Growth: A Promising Way for Recessed Gate GaN MOSFET With High Quality MOS Interface,IEEE Electronic Devices Letters, Vol. 37, No.9, p1193-1196, 2016.09
  8. F. Yang, L. He, Y. Zheng, L.A. Li, Z. J. Chen, D.Q. Zhou, Z.Y. He, Y. Yao, Y.Q. Ni, Z. Shen, X. R. Zhang, L. He, Z.S Wu, B. J. Zhang,Yang Liu*, Influence of interface contamination on transport properties of two-dimensional electron gas in selective area growth AlGaN/GaN heterostructure,Journal of Materials Science: Materials in Electronics,Vol.27, Issue 9, pp 9061–9066, 2016.09
  9. Y.Q. Ni, L. He, D.Q. Zhou, Z.Y. He, Z. J. Chen, Y. Zheng, F. Yang, Z. Shen, X. R. Zhang, L. He, Z.S Wu, B. J. Zhang,Yang Liu*, Low-leakage current and high-breakdown voltage GaN-on-Si(111) System with an AlGaN impurity blocking layer,Journal of Materials Science: Materials in Electronics, Vol.27, Issue 5, pp 5158-5163, 2016.05
  10. D.Q. Zhou, Y.Q. Ni, Z.Y. He, F. Yang, Y. Yao, Z. Shen, J. Zhong, G.L. Zhou, Y. Zheng, L. He, Z.S Wu, B. J. Zhang,Yang Liu*, Investigation of breakdown properties in the carbon doped GaN by photoluminescence analysis,physica status solidi (c), Vol. 13, No.5-6, p.345-349, 2016.05
  11. L.A. Li, X.Z. Wang,Yang Liu*, J.P. Ao*, NiO/GaN heterojunction diode deposited through magnetron reactive sputtering,Journal of Vacuum Science& Technology A, Vol. 34, Issue 2, p02D104, 2016.03
  12. L.A. Li, J.Q. Zhang,Yang Liu*, and J.P. Ao*, Evaluation of a gate-first process for AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with low ohmic annealing temperature,Chinese Physics B, Vol. 25, No.3, p038503, 2016.03
  13. Y.Q. Ni, D.Q. Zhou, Z. J. Chen, Y. Zheng, Z.Y. He, F. Yang, Y. Yao, G.L. Zhou, Z. Shen, J. Zhong, Z.S Wu, B. J. Zhang,Yang Liu*, Influence of the carbon-doping location on the material and electrical properties of a AlGaN/GaN heterostructure on Si substrate,Semiconductor Science and Technology,Vol.30, p105037 (9p), 2015.09
  14. F. Yang, Y. Yao, Z.Y. He, G.L. Zhou, Y. Zheng, L. He, J.C. Zhang, Y.Q. Ni, D.Q. Zhou, Z. Shen, J. Zhong, Z.S Wu, B. J. Zhang,Yang Liu*, The suppression of background doping in selective area growth technique for high performance normally-off AlGaN/GaN MOSFET,Journal of Materials Science: Materials in Electronics, Vol.26, Issue 12, p9753-9758, 2015.09
  15. J. Zhong, Y. Yao, Y. Zheng, F. Yang, Y.Q. Ni, Z.Y. He, Z. Shen, G.L. Zhou, D.Q. Zhou, Z.S Wu, B. J. Zhang,Liu Yang*, Influence of dry-etching damage on the electrical properties of an AlGaN/GaN Schottky barrier diode with recessed anode,Chinese Physics B, Vol. 24, No. 9, p097303, 2015.09
  16. Y. Jiang, Q.P. Wang, F.Z. Zhang, L.A. Li, D.Q. Zhou,Yang Liu, Dejun Wang, Jin-Ping Ao*, Reduction of leakage current by O2plasma treatment for deviceisolation of AlGaN/GaN heterojunction field-effect transistors,Applied Surface Science,Vol.351, p1155–1160,2015.06
  17. Y.Q. Ni, Z.Y. He, Y. Yao, F. Yang, D.Q. Zhou, G.L. Zhou, Z. Shen, J. Zhong n, Y. Zheng, B. J. Zhang,Liu Yang*, Si and Mg pair-doped interlayers for improving performance of AlGaN/GaN heterostructure field effect transistors grown on Si substrate,Chinese Physics B, Vol. 24, No. 5, p057303 , 2015.05
  18. Y.Q. Ni, Z.Y. He, D.Q. Zhou, Y. Yao, F. Yang, G.L. Zhou, Z. Shen, J. Zhong, Y. Zheng, B. J. Zhang,Yang Liu*, The influences of AlN/GaN superlattices buffer on the characteristics of AlGaN/GaN-on-Si(111) template,Superlattices and Microstructures, Vol.83, p811–818 , 2015.03
  19. Y. Yao, J. Zhong, Y. Zheng, F. Yang, Y.Q. Ni, Z.Y. He, Z. Shen, G.L. Zhou, S. Wang, J.C. Zhang, J. Li, D.Q. Zhou, Z.S Wu, B. J. Zhang,Yang Liu*, Current transport mechanism of AlGaN/GaN Schottky barrier diode with fully recessed Schottky anode,Japanese Journal of Applied Physics, Vol. 54, p011001 ,2015.01
  20. Y.Q. Ni, Z.Y. He, F. Yang, D.Q. Zhou, Y. Yao, G.L. Zhou, Z. Shen, J. Zhong, Y. Zheng, Z.S Wu, B. J. Zhang,Yang Liu*, Effect of AlN/GaN superlattice buffer on the strain state in GaN-on-Si(111) system,Japanese Journal of Applied Physics, Vol. 54, p015505 ,2015.01
  21. Y. Yao, Z.Y. He, F. Yang, Z. Shen, J.C. Zhang, Y.Q. Ni, Jin Li, S. Wang, G.L. Zhou, J. Zhong, Z.S Wu, B. J. Zhang, J.P. Ao andYang Liu*,Normally-off GaN recessed-gate MOSFET fabricated by selective area growth technique,Applied Physics Express. Vol. 7, No. 1, p016502,2014.01
  22. Z.Y. He, Y.Q. Ni, F. Yang, J. Wei, Y. Yao, Z. Shen, P. Xiang, M.G. Liu, S. Wang, J.C. Zhang, Z.S Wu, B. J. Zhang, andYang Liu*, Investigations of leakage current properties in semi-insulating GaN grown on Si (111) substrate with low-temperature AlN interlayers,Journal of Physics D: Applied Physics,Vol. 47, No. 4, p045103 ,2014.01
  23. Y.Q. Ni, Z.Y. He, J. Zhong, Y. Yao, F. Yang, P. Xiang, B. J. Zhang, andLiu Yang*, Electrical properties of MOCVD-grown GaN on Si (111) substrates with low-temperature AlN interlayers,Chinese Physics B, Vol. 22, No. 8, p088104,2013.04
  24. Z.Y. He, J.L. Li, Y.H. Wen, Z. Shen, Y. Yao, F. Yang, Y.Q. Ni, Z.S Wu, B. J. Zhang, andYang Liu*, Comparison of Two Types of Recessed-Gate Normally-Off AlGaN/GaN Heterostructure Field Effect Transistors,Japanese Journal of Applied Physics, Vol.51, p054103,2012.05
  25. Y.H. Wen, Z.Y. He, J.L. Li, R.H. Luo, P. Xiang, Q.Y. Deng, G.N. Xu, Z. Shen, Z.S Wu, B. J. Zhang, H. Jiang, G. Wang, and Yang Liu*, “Enhancement-mode AlGaN/GaN heterostructure field effect transistors fabricated by selective area growth technique,Applied Physics Letters, Vol.98, p072108, 2011.02

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