武漢大學物理科學與技術學院教授。主要研究方向為加速器電鏡在線上及材料科學套用、DLC（類金剛石）、CN（氮化碳）、納米晶複合材料、自旋電子學及鐵和Free-standing GaN、寬禁帶半導體。。
基本介紹
- 中文名：付德君
- 國籍：中國
- 民族：漢族
- 職業：武漢大學
- 信仰：共產主義
- 性別：男
- 研究領域：加速器電鏡在線上及材料科學套用
簡 歷,科研項目,科研成果,教學工作,學術兼職,近期主要論文,主要專利,
簡 歷
1981-1985， 武漢大學物理系,獲學士學位。
1985-1988， 武漢大學物理系，獲碩士學位。
1988-1995， 三峽大學物理系，講師。
1996-1999， 武漢大學物理系，獲博士學位。
1999-2002， 東國大學（韓國）量子功能半導體研究中心，博士後fellow。
從事GaN、MOS、納米pyramid、磁性半導體的研究工作。
2001-2004， 東國大學（韓國）研究教授，從事鐵電存貯器、自旋電子學研究。
2004年－今， 武漢大學教授，從事寬禁帶半導體、自旋電子學、離子束材料合成與改性。
科研項目
1. 教育部留學歸國人員啟動基金：離子注入製備GaN、ZnO基磁性半導體
2. 國家自然科學基金重點項目：加速器-電鏡在線上及其在材料科學中的套用
3. 科技部中韓國際科技合作項目：線上離子束製備鐵電鐵磁性納米結構器件及其原位離子束表征。以上項目主要成果如下：
- 國內第一套加速器-電鏡在線上裝置
- 計算機掃描RBS/C系統
- 低能團簇負離子注入/沉積靶室，可用於graphene製備和超淺結研究
4. 國家發改委高新技術產業化示範工程：氮化碳超硬塗層技術產業化
5. 工信部國家科技重大專項：用於黑色金屬加工的超細晶硬質合金塗層刀具
6. 科技部對俄科技合作專項：用於活塞環表面高性能塗層的環境友好PVD技術。以上項目主要成果如下：
- 高性能塗層系列：TiAlN, CrN, Ti-Si-N,DLC, TiAlCrN, TiAlSiN, TiAlCrSiN,納米複合塗層等。套用範圍：硬質合金刀具、微鑽、微銑、發動機活塞環、模具、紡織鋼領等工件的表面塗層
- 超厚與超硬塗層技術
- 環境友好型替代電鍍鉻新技術
7. 自主科研項目：穆斯堡爾譜與深空探測原位核分析技術
- 常規Mossbauer測試，低溫Mossbauer譜
- RBS-PIXE-ERD與穆斯堡爾譜相結合的測試表征技術
- 鐵基超導、多鐵性材料及土壤分析
2. 國家自然科學基金重點項目：加速器-電鏡在線上及其在材料科學中的套用
3. 科技部中韓國際科技合作項目：線上離子束製備鐵電鐵磁性納米結構器件及其原位離子束表征。以上項目主要成果如下：
- 國內第一套加速器-電鏡在線上裝置
- 計算機掃描RBS/C系統
- 低能團簇負離子注入/沉積靶室，可用於graphene製備和超淺結研究
4. 國家發改委高新技術產業化示範工程：氮化碳超硬塗層技術產業化
5. 工信部國家科技重大專項：用於黑色金屬加工的超細晶硬質合金塗層刀具
6. 科技部對俄科技合作專項：用於活塞環表面高性能塗層的環境友好PVD技術。以上項目主要成果如下：
- 高性能塗層系列：TiAlN, CrN, Ti-Si-N,DLC, TiAlCrN, TiAlSiN, TiAlCrSiN,納米複合塗層等。套用範圍：硬質合金刀具、微鑽、微銑、發動機活塞環、模具、紡織鋼領等工件的表面塗層
- 超厚與超硬塗層技術
- 環境友好型替代電鍍鉻新技術
7. 自主科研項目：穆斯堡爾譜與深空探測原位核分析技術
- 常規Mossbauer測試，低溫Mossbauer譜
- RBS-PIXE-ERD與穆斯堡爾譜相結合的測試表征技術
- 鐵基超導、多鐵性材料及土壤分析
科研成果
在Appl. Phys. Lett.和Phys. Rev. B等國際知名期刊上發表論文 50 余篇。他引近300次。首次採用光電化學方法製備GaN基MOS器件；率先用光化學方法形成GaN納米金錐；首次在磁性半導體材料中觀測到鐵電存儲特性。申請發明專利13項。
教學工作
大學物理（本科課程）；現代材料物理（研究生課程）
學術兼職
湖北省核學會副理事長
湖北省太陽能研究會副理事長
湖北省刀具協會副理事長
Chinese Phys. Lett.特約評審。
近期主要論文
1.J. He, J. C. Lee, M. Li, Z. S. Wang, C. S. Liu, D. J. Fu, Computerized Control and Operation of Rutherford Backscattering/Channeling for an in situ Ion Beam System and Its Application for Measurement of Si(001) and ZnO(001), Chin. Phys. Lett. 28 (2011) 012901.
2.J. He, Z. S. Wang, M. Li, D. J. Fu, Structural and magnetic characterization of cobalt implanted GaN films, Nucl. Instr. Meth. B 269 (2011) 1041.
3.U. V. Valiev, J. B. Gruber, D. J. Fu, V. O. Pelenovich, G. W. Burdick, M. E. Malysheva, Specific features of Eu3+ and Tb3+ magnetooptics in gadolinium-gallium garnet, J. Rare Earth 29 (2011) 776.
4.C.W. Zou, H.J. Wang, M.L. Yi, M. Li, C.S. Liu, L.P. Guo, D.J. Fu, T.W. Kang, Defects related room temperature ferromagnetism in p-type (Mn, Li)-doped ZnO films deposited by reactive magnetron sputtering, Appl. Surf. Sci. 256 (2010) 2453.
5.M. Li, C. W. Zou, G. F. Wang, H. J. Wang, M. L. Yin, C. S. Liu, L. P. Guo, D. J. Fu, and T. W. Kang, Room temperature ferroelectric and magnetic properties of (Co, Li)-implanted ZnO films, J. Appl. Phys. 107 (2010) 104117.
6.X. W. Ke, F. K. Shan, G. F. Wang, C. S. Liu, D. J. Fu, Structural and Raman Analysis of Antimony-Implanted ZnMnO, Plasma Sci. Technol. 12 (2010) 92.
7.X. W. Ke, C. W. Zou, M. Li, C. S. Liu, L. P. Guo, D. J. Fu, Structure and Magnetic Properties of Mn-Implanted ZnO Films, Jpn. J. Appl. Phys. 49 (2010) 033001.
8.C. W. Zou, H. J. Wang, M. Li, Y. F. Yu, C. S. Liu, L. P. Guo, D.J. Fu, Characterization and properties of TiN-containing amorphous Ti–Si–N nanocomposite coatings prepared by arc assisted middle frequency magnetron sputtering, Vacuum 84 (2010) 817.
9.H. J. Wang, C. W. Zou, B. Yang, H. B. Lu, C. X. Tian, H. J. Yang, M. Li, C. S. Liu, D. J. Fu, J. R. Liu, Electrodeposition of tubular-rod structure gold nanowires using nanoporous anodic alumina oxide as template, Electrochem. Commun. 11 (2009) 2019.
10.C. W. Zou, H. J. Wang, M. L. Yin, M. Li, C. S. Liu, L. P. Guo, D. J. Fu, T. W. Kang, Preparation of GaN films on glass substrates by middle frequency magnetron sputtering, J. Crystal Growth 311 (2009) 223.
11.Z. T. Yang, B. Yang, L. P. Guo, D. J. Fu, Effect of bias voltage on the structure and hardness of Ti-Si-N composite coatings synthesized by cathodic arc assisted middle-frequency magnetron sputtering, J. Alloys Compounds 473 (2009) 437.
12.Z. T. Yang, B. Yang, L. P. Guo, D. J. Fu, Synthesis of Ti-Si-N nanocomposite coatings by a novel cathodic arc assisted middle-frequency magnetron sputtering, Appl. Surf. Sci. 255 (2009) 4720.
13.C. X. Tian, B. Yang, J. He, H. J. Wang, S. Q. Rong, C. W. Zou, C. S. Liu, L. P. Guo, D. J. Fu, Preparation of CrN thick films by high-rate middle-frequency unbalanced magnetron sputtering, Vacuum 83 (2009) 1459-1463.
14.M. L. Yin, M. Li, C. W. Zou, C. S. Liu, L. P. Guo, D. J. Fu, AlN films deposited by middle-frequency magnetron sputtering with and without anode-layer ion source assistance, J. Phys. D 41 (2008) 085407.
15.Y. H. Kwon, T. W. Kang, Y. Shon, H. Y. Cho, H. C. Jeon, Y. S. Park, D. U. Lee, T. W. Kim, D. J. Fu, Magnetic properties of Mn+-implanted and annealed Si1−xGex thin films grown on p-Si (100) substrates, Solid State Commun. 147 (2008) 161-164.
16.I. T. Yoon, C. J. Park, S. W. Lee, T. W. Kang, D. W. Koh, D. J. Fu, Ferromagnetism in self-assembled Ge quantum dots material followed by Mn implantation and annealing, Solid State Electronics 52 (2008) 871-876.
17.L. P. Guo, C. S. Liu, M. Li, B. Song, M. S. Ye, D. J. Fu, X. J. Fan, Establishment of in situ TEM-implanter/accelerator interface facility at Wuhan University, Nucl. Instr. Meth. A 586 (2008) 143.
18.Y. Shon, H. C. Jeon, S. J. Lee, C. S. Park, E. K. Kim, D. J. Fu, X. J. Fan, The appearance of clear ferromagnetism for p-type InMnP:Zn implanted with Mn of 1 at.%, Mater. Sci. Engr B 146 (2008) 220-224.
19.C. W. Zou, M. Li, M. L. Yin, D. J. Fu, GaN films deposited by middle-frequency magnetron sputtering, Appl. Surf. Sci. 253 (2007) 9077.
20.X. W. Ke, F. K. Shan, Y. S. Park, Y. J. Wang, D. J. Fu, Optical properties of antimony-implanted ZnO epilayers, Surf. Coat. Technol. 201 (2007) 6797.
21.L. Liao, H. B. Lu, J. C. Li, C. Liu, D. J. Fu et al, The sensitivity of gas sensor based on single ZnO nanowire modulated by helium ion radiation, Appl. Phys. Lett. 91 (2007) 173110.
22.M. L. Yin, C. W. Zou, D. J. Fu, Middle-frequency magnetron sputtering for GaN growth, Nucl. Instr. Meth. B 262 (2007) 189.
23.D. H. Kim, D. J. Lee, T. W. Kang, D. J. Fu, Ferroelectric and magnetic properties of CdMnS films prepared by co-evaporation, J. Appl. Phys. 101 (2007) 094111. 24.B. Yang, Z. H. Huang, C. S. Liu, Z. Y. Zeng, X. J. Fan, D. J. Fu, Characterization and properties of Ti-containing amorphous carbon nanocomposite coatings, Surf. Coat. Technol. 200 (2006) 5812.
25.Y. Shon, S. J. Lee, H. C. Jeon, T. W. Kang, D. J. Fu, Ferromagnetic formation of two phases MnP and InMn3 from InMnP:Zn, Appl. Phys. Lett. 88 (2006) 232511.
26.Y. Shon, S. J. Lee, H. C. Jeon, Y. S. Park, D. Y. Kim, T. W. Kang, J. S. Kim, E. K. Kim, D. J. Fu, X. J. Fan, Y. J. Park, Origin of clear ferromagnetism for p-type GaN implanted with Fe+ of 5-10 at%, Appl. Phys. Lett. 89 (2006) 082505.
27.I. T. Yoon, C. J. Park, T. W. Kang, D. J. Fu, Magnetic and transport properties of Mn-implanted Ge/Si quantum dots, Solid State Commun. 140 (2006) 185.
28.Z. H. Huang, B. Yang, C. S. Liu, X. J. Fan, D. J. Fu, Formation of C3N4 nanocrystals in Ti-doped CNx films prepared by arc-assisted MF magnetron sputtering, Jpn. J. Appl. Phys. 45 (2006) L562.
29.D. J. Fu and T. W. Kang, Gallium nitride pyramids fabricated by electroless etching, Jpn. J. Appl. Phys. 44 (2005) L342.
30.F. Ren, C. Z. Jiang, C. Liu, D. J. Fu, Y. Shi, Interface influence on the surface plasmon resonance of Ag nanocluster composite, Solid State Commun. 135 (2005) 268-272.
31.B. Yang, Z. H. Huang, C. S. Liu, Z. Y. Zeng, X. J. Fan, D. J. Fu, Ti-Containing Amorphous Carbon Nanocomposite Coatings Prepared by Means of Eight-Target Arc-Assisted Middle Frequency Magnetron Sputtering, Jpn. J. Appl. Phys. 44 (2005) 1022.
32.Y. S. Park, C. M. Park, D. J. Fu, T. W. Kang, J. E. Oh, Photoluminescence studies of GaN nanorods on Si (111) substrates grown by molecular-beam epitaxy, Appl. Phys. Lett. 85 (2004) 5718.
33.Y. Shon, W. C. Lee, Y. S. Park, Y. H. Kwon, Seung Joo Lee, K. J. Chung, H. S. Kim, D. Y. Kim, D. J. Fu, Mn-implanted dilute magnetic semiconductor InP:Mn, Appl. Phys. Lett. 84 (2004) 2310.
34.Y. Shon, Y. H. Kwon, Y. S. Park, Y. Sh. Yuldashev, S. J. Lee, C. S. Park, K. J. Chung, S. J. Hoon, H. J. Kim, W. C. Lee, D. J. Fu, T. W. Kang, Ferromagnetic behavior of p-type GaN epilayer implanted with Fe ions, J. Appl. Phys. 95 (2004) 761.
35.M. K. Li, C. B. Li, C. S. Liu, X. J. Fan, D. J. Fu, Y. Shon, T. W. Kang, Optical and magnetic measurements of Mn+-implanted AlN, J. Appl. Phys. 95 (2004) 755.
36.Y. Shon, W. C. Lee, Y. S. Park, Y. H. Kwon, Seung Joo Lee, K. J. Chung, H. S. Kim, D. Y. Kim, D. J. Fu, T. W. Kang, X. J. Fan, Y. J. Park, Mn-implanted dilute magnetic semiconductor InP:Mn, Appl. Phys. Lett. 84 (2004) 2310.
37.D. J. Fu, J. C. Lee, S. W. Choi, C. S. Park, G. P. Panin, T. W. Kang, X. J. Fan, Ferroelectricity in Mn-implanted CdTe, Appl. Phys. Lett. 83 (2003) 2214.
38.D. J. Fu, J. C. Lee, S. W. Choi, S. J. Lee, T. W. Kang, M. S. Jang, H. I. Lee and Y. D. Woo, Study of ferroelectricity and current–voltage characteristics of CdZnTe, Appl. Phys. Lett. 81 (2002) 5207.
39.D. J. Fu and T. W. Kang, Electrical properties of GaN-based metal-oxide-semiconductor structures fabricated by photoelectrochemical oxidation, Jpn. J. Appl. Phys. 41 (2002) L1437.
40.D. J. Fu, Y. H. Kwon, T. W. Kang, C. J. Park, K. H. Baek, H. Y. Cho, D. H. Shin, C. H. Lee, GaN metal-oxide-semiconductor structures using Ga-oxide dielectrics formed by photoelectrochemical oxidation, Appl. Phys. Lett. 80 (2002) 446.
41.Y. H. Kwon, C. J. Park, W. C. Lee, D. J. Fu, Y. Shon, T. W. Kang, C. Y. Hong, H. Y. Cho, K. L. Wang, Memory effects related to deep levels in metal–oxide–semiconductor structure with nanocrystalline Si, Appl. Phys. Lett. 80 (2002) 2502.
42.Y. Shon, Y. H. Kwon, Sh. U. Yuldashev, J. H. Leem, C. S. Park, D. J. Fu, H. J. Kim, T. W. Kang, X. J. Fan, Optical and magnetic measurements of p-type GaN epilayers implanted with Mn ions, Appl. Phys. Lett. 81 (2002) 1845.
43.Y. Shon, Y. H. Kwon, D. Y. Kim, X. Fan, D. J. Fu, T. W. Kang, Magnetic Characteristic of Mn ion implanted GaN epilayer, Jpn. J. Appl. Phys. 40 (2001) 5304.
44.D. J. Fu, T. W. Kang, Sh. U. Yudalshev, N. H. Kim, S. H. Park, J. S. Yun, K. S. Chung, Effect of photoelectrochemical oxygenation on properties of GaN epilayers grown by MBE, Appl. Phys. Lett. 78 (2001) 1309.
45.D. J. Fu, Sh. U. Yudalshev, N. H. Kim, Y. S. Ryu, J. S. Yun, S. H. Park, T. W. Kang, A study of photoelectrochemical oxidation of GaN epilayers by extrinsic photoconductivity, Jpn. J. Appl. Phys. 40 (2001) L10.
46.D. J. Fu, Y. Y. Lei, J. C. Li, M. S. Ye, H. X. Guo, Y. G. Peng, X. J. Fan, Doping and photoelectric properties of C60 films prepared by ionized cluster beam deposition, Appl. Phys. A 67 (1998) 441.
47.D. W. Wu, Z. Zhang, D. J. Fu, X. J. Fan, Structure, electrical and chemical properties of ZrN deposited by dc reactive magnetron sputtering, Appl. Phys. A 64 (1997) 593.
48.D. W. Wu, D. J. Fu, H. X. Guo, Z. H. Zhang, X. Q. Meng, X. J. Fan, Structure and characteristics of C3N4 films prepared by rf plasma enhanced chemical vapor deposition, Phys. Rev. B 56 (1997) 4949.
49.S. C. Chen, H. Zhang, D. J. Fu, Boron implantation of diamond-like carbon films, Vacuum 39 (1989) 183.
50.C. S. Chen, D. J. Fu, H. Zhang, X. Z. Pan, A reaction sputtering type rf ion source for solid elements, Nucl. Instr. Meth. B 37-38 (1989) 136.
2.J. He, Z. S. Wang, M. Li, D. J. Fu, Structural and magnetic characterization of cobalt implanted GaN films, Nucl. Instr. Meth. B 269 (2011) 1041.
3.U. V. Valiev, J. B. Gruber, D. J. Fu, V. O. Pelenovich, G. W. Burdick, M. E. Malysheva, Specific features of Eu3+ and Tb3+ magnetooptics in gadolinium-gallium garnet, J. Rare Earth 29 (2011) 776.
4.C.W. Zou, H.J. Wang, M.L. Yi, M. Li, C.S. Liu, L.P. Guo, D.J. Fu, T.W. Kang, Defects related room temperature ferromagnetism in p-type (Mn, Li)-doped ZnO films deposited by reactive magnetron sputtering, Appl. Surf. Sci. 256 (2010) 2453.
5.M. Li, C. W. Zou, G. F. Wang, H. J. Wang, M. L. Yin, C. S. Liu, L. P. Guo, D. J. Fu, and T. W. Kang, Room temperature ferroelectric and magnetic properties of (Co, Li)-implanted ZnO films, J. Appl. Phys. 107 (2010) 104117.
6.X. W. Ke, F. K. Shan, G. F. Wang, C. S. Liu, D. J. Fu, Structural and Raman Analysis of Antimony-Implanted ZnMnO, Plasma Sci. Technol. 12 (2010) 92.
7.X. W. Ke, C. W. Zou, M. Li, C. S. Liu, L. P. Guo, D. J. Fu, Structure and Magnetic Properties of Mn-Implanted ZnO Films, Jpn. J. Appl. Phys. 49 (2010) 033001.
8.C. W. Zou, H. J. Wang, M. Li, Y. F. Yu, C. S. Liu, L. P. Guo, D.J. Fu, Characterization and properties of TiN-containing amorphous Ti–Si–N nanocomposite coatings prepared by arc assisted middle frequency magnetron sputtering, Vacuum 84 (2010) 817.
9.H. J. Wang, C. W. Zou, B. Yang, H. B. Lu, C. X. Tian, H. J. Yang, M. Li, C. S. Liu, D. J. Fu, J. R. Liu, Electrodeposition of tubular-rod structure gold nanowires using nanoporous anodic alumina oxide as template, Electrochem. Commun. 11 (2009) 2019.
10.C. W. Zou, H. J. Wang, M. L. Yin, M. Li, C. S. Liu, L. P. Guo, D. J. Fu, T. W. Kang, Preparation of GaN films on glass substrates by middle frequency magnetron sputtering, J. Crystal Growth 311 (2009) 223.
11.Z. T. Yang, B. Yang, L. P. Guo, D. J. Fu, Effect of bias voltage on the structure and hardness of Ti-Si-N composite coatings synthesized by cathodic arc assisted middle-frequency magnetron sputtering, J. Alloys Compounds 473 (2009) 437.
12.Z. T. Yang, B. Yang, L. P. Guo, D. J. Fu, Synthesis of Ti-Si-N nanocomposite coatings by a novel cathodic arc assisted middle-frequency magnetron sputtering, Appl. Surf. Sci. 255 (2009) 4720.
13.C. X. Tian, B. Yang, J. He, H. J. Wang, S. Q. Rong, C. W. Zou, C. S. Liu, L. P. Guo, D. J. Fu, Preparation of CrN thick films by high-rate middle-frequency unbalanced magnetron sputtering, Vacuum 83 (2009) 1459-1463.
14.M. L. Yin, M. Li, C. W. Zou, C. S. Liu, L. P. Guo, D. J. Fu, AlN films deposited by middle-frequency magnetron sputtering with and without anode-layer ion source assistance, J. Phys. D 41 (2008) 085407.
15.Y. H. Kwon, T. W. Kang, Y. Shon, H. Y. Cho, H. C. Jeon, Y. S. Park, D. U. Lee, T. W. Kim, D. J. Fu, Magnetic properties of Mn+-implanted and annealed Si1−xGex thin films grown on p-Si (100) substrates, Solid State Commun. 147 (2008) 161-164.
16.I. T. Yoon, C. J. Park, S. W. Lee, T. W. Kang, D. W. Koh, D. J. Fu, Ferromagnetism in self-assembled Ge quantum dots material followed by Mn implantation and annealing, Solid State Electronics 52 (2008) 871-876.
17.L. P. Guo, C. S. Liu, M. Li, B. Song, M. S. Ye, D. J. Fu, X. J. Fan, Establishment of in situ TEM-implanter/accelerator interface facility at Wuhan University, Nucl. Instr. Meth. A 586 (2008) 143.
18.Y. Shon, H. C. Jeon, S. J. Lee, C. S. Park, E. K. Kim, D. J. Fu, X. J. Fan, The appearance of clear ferromagnetism for p-type InMnP:Zn implanted with Mn of 1 at.%, Mater. Sci. Engr B 146 (2008) 220-224.
19.C. W. Zou, M. Li, M. L. Yin, D. J. Fu, GaN films deposited by middle-frequency magnetron sputtering, Appl. Surf. Sci. 253 (2007) 9077.
20.X. W. Ke, F. K. Shan, Y. S. Park, Y. J. Wang, D. J. Fu, Optical properties of antimony-implanted ZnO epilayers, Surf. Coat. Technol. 201 (2007) 6797.
21.L. Liao, H. B. Lu, J. C. Li, C. Liu, D. J. Fu et al, The sensitivity of gas sensor based on single ZnO nanowire modulated by helium ion radiation, Appl. Phys. Lett. 91 (2007) 173110.
22.M. L. Yin, C. W. Zou, D. J. Fu, Middle-frequency magnetron sputtering for GaN growth, Nucl. Instr. Meth. B 262 (2007) 189.
23.D. H. Kim, D. J. Lee, T. W. Kang, D. J. Fu, Ferroelectric and magnetic properties of CdMnS films prepared by co-evaporation, J. Appl. Phys. 101 (2007) 094111. 24.B. Yang, Z. H. Huang, C. S. Liu, Z. Y. Zeng, X. J. Fan, D. J. Fu, Characterization and properties of Ti-containing amorphous carbon nanocomposite coatings, Surf. Coat. Technol. 200 (2006) 5812.
25.Y. Shon, S. J. Lee, H. C. Jeon, T. W. Kang, D. J. Fu, Ferromagnetic formation of two phases MnP and InMn3 from InMnP:Zn, Appl. Phys. Lett. 88 (2006) 232511.
26.Y. Shon, S. J. Lee, H. C. Jeon, Y. S. Park, D. Y. Kim, T. W. Kang, J. S. Kim, E. K. Kim, D. J. Fu, X. J. Fan, Y. J. Park, Origin of clear ferromagnetism for p-type GaN implanted with Fe+ of 5-10 at%, Appl. Phys. Lett. 89 (2006) 082505.
27.I. T. Yoon, C. J. Park, T. W. Kang, D. J. Fu, Magnetic and transport properties of Mn-implanted Ge/Si quantum dots, Solid State Commun. 140 (2006) 185.
28.Z. H. Huang, B. Yang, C. S. Liu, X. J. Fan, D. J. Fu, Formation of C3N4 nanocrystals in Ti-doped CNx films prepared by arc-assisted MF magnetron sputtering, Jpn. J. Appl. Phys. 45 (2006) L562.
29.D. J. Fu and T. W. Kang, Gallium nitride pyramids fabricated by electroless etching, Jpn. J. Appl. Phys. 44 (2005) L342.
30.F. Ren, C. Z. Jiang, C. Liu, D. J. Fu, Y. Shi, Interface influence on the surface plasmon resonance of Ag nanocluster composite, Solid State Commun. 135 (2005) 268-272.
31.B. Yang, Z. H. Huang, C. S. Liu, Z. Y. Zeng, X. J. Fan, D. J. Fu, Ti-Containing Amorphous Carbon Nanocomposite Coatings Prepared by Means of Eight-Target Arc-Assisted Middle Frequency Magnetron Sputtering, Jpn. J. Appl. Phys. 44 (2005) 1022.
32.Y. S. Park, C. M. Park, D. J. Fu, T. W. Kang, J. E. Oh, Photoluminescence studies of GaN nanorods on Si (111) substrates grown by molecular-beam epitaxy, Appl. Phys. Lett. 85 (2004) 5718.
33.Y. Shon, W. C. Lee, Y. S. Park, Y. H. Kwon, Seung Joo Lee, K. J. Chung, H. S. Kim, D. Y. Kim, D. J. Fu, Mn-implanted dilute magnetic semiconductor InP:Mn, Appl. Phys. Lett. 84 (2004) 2310.
34.Y. Shon, Y. H. Kwon, Y. S. Park, Y. Sh. Yuldashev, S. J. Lee, C. S. Park, K. J. Chung, S. J. Hoon, H. J. Kim, W. C. Lee, D. J. Fu, T. W. Kang, Ferromagnetic behavior of p-type GaN epilayer implanted with Fe ions, J. Appl. Phys. 95 (2004) 761.
35.M. K. Li, C. B. Li, C. S. Liu, X. J. Fan, D. J. Fu, Y. Shon, T. W. Kang, Optical and magnetic measurements of Mn+-implanted AlN, J. Appl. Phys. 95 (2004) 755.
36.Y. Shon, W. C. Lee, Y. S. Park, Y. H. Kwon, Seung Joo Lee, K. J. Chung, H. S. Kim, D. Y. Kim, D. J. Fu, T. W. Kang, X. J. Fan, Y. J. Park, Mn-implanted dilute magnetic semiconductor InP:Mn, Appl. Phys. Lett. 84 (2004) 2310.
37.D. J. Fu, J. C. Lee, S. W. Choi, C. S. Park, G. P. Panin, T. W. Kang, X. J. Fan, Ferroelectricity in Mn-implanted CdTe, Appl. Phys. Lett. 83 (2003) 2214.
38.D. J. Fu, J. C. Lee, S. W. Choi, S. J. Lee, T. W. Kang, M. S. Jang, H. I. Lee and Y. D. Woo, Study of ferroelectricity and current–voltage characteristics of CdZnTe, Appl. Phys. Lett. 81 (2002) 5207.
39.D. J. Fu and T. W. Kang, Electrical properties of GaN-based metal-oxide-semiconductor structures fabricated by photoelectrochemical oxidation, Jpn. J. Appl. Phys. 41 (2002) L1437.
40.D. J. Fu, Y. H. Kwon, T. W. Kang, C. J. Park, K. H. Baek, H. Y. Cho, D. H. Shin, C. H. Lee, GaN metal-oxide-semiconductor structures using Ga-oxide dielectrics formed by photoelectrochemical oxidation, Appl. Phys. Lett. 80 (2002) 446.
41.Y. H. Kwon, C. J. Park, W. C. Lee, D. J. Fu, Y. Shon, T. W. Kang, C. Y. Hong, H. Y. Cho, K. L. Wang, Memory effects related to deep levels in metal–oxide–semiconductor structure with nanocrystalline Si, Appl. Phys. Lett. 80 (2002) 2502.
42.Y. Shon, Y. H. Kwon, Sh. U. Yuldashev, J. H. Leem, C. S. Park, D. J. Fu, H. J. Kim, T. W. Kang, X. J. Fan, Optical and magnetic measurements of p-type GaN epilayers implanted with Mn ions, Appl. Phys. Lett. 81 (2002) 1845.
43.Y. Shon, Y. H. Kwon, D. Y. Kim, X. Fan, D. J. Fu, T. W. Kang, Magnetic Characteristic of Mn ion implanted GaN epilayer, Jpn. J. Appl. Phys. 40 (2001) 5304.
44.D. J. Fu, T. W. Kang, Sh. U. Yudalshev, N. H. Kim, S. H. Park, J. S. Yun, K. S. Chung, Effect of photoelectrochemical oxygenation on properties of GaN epilayers grown by MBE, Appl. Phys. Lett. 78 (2001) 1309.
45.D. J. Fu, Sh. U. Yudalshev, N. H. Kim, Y. S. Ryu, J. S. Yun, S. H. Park, T. W. Kang, A study of photoelectrochemical oxidation of GaN epilayers by extrinsic photoconductivity, Jpn. J. Appl. Phys. 40 (2001) L10.
46.D. J. Fu, Y. Y. Lei, J. C. Li, M. S. Ye, H. X. Guo, Y. G. Peng, X. J. Fan, Doping and photoelectric properties of C60 films prepared by ionized cluster beam deposition, Appl. Phys. A 67 (1998) 441.
47.D. W. Wu, Z. Zhang, D. J. Fu, X. J. Fan, Structure, electrical and chemical properties of ZrN deposited by dc reactive magnetron sputtering, Appl. Phys. A 64 (1997) 593.
48.D. W. Wu, D. J. Fu, H. X. Guo, Z. H. Zhang, X. Q. Meng, X. J. Fan, Structure and characteristics of C3N4 films prepared by rf plasma enhanced chemical vapor deposition, Phys. Rev. B 56 (1997) 4949.
49.S. C. Chen, H. Zhang, D. J. Fu, Boron implantation of diamond-like carbon films, Vacuum 39 (1989) 183.
50.C. S. Chen, D. J. Fu, H. Zhang, X. Z. Pan, A reaction sputtering type rf ion source for solid elements, Nucl. Instr. Meth. B 37-38 (1989) 136.
主要專利
1. D. J. Fu, S. W. Choi, J. C. Lee, T. W. Kang, Nonvolatile memory devices using ferroelectric semiconductors, Application # 10-2003-007356（韓國專利申請號）.
2. D. J. Fu, S. W. Choi, J. C. Lee, T. W. Kang, 1T1C nonvolatile memory devices using ferroelectric semiconductors, Application # 10-2003-007357.
3. D. J. Fu, J. C. Lee, S. W. Choi, T. W. Kang, Nonvolatile memory using ferroelectric semiconductor channels, Application # 10-2003-007358.
4. D. J. Fu, S. W. Choi, T. W. Kang, Chemically formed GaN pyramids as template for III-nitride growth, Application # 10- 5. D. J. Fu et al, Memory devices using current-voltage hysteresis of ferroelectric semiconductors, Application # 10-2003-007355.
