本書可作為微電子、光電子、微機械、半導體材料、納米材料等專業的大專院校師生和專業技術人員重要的參考書，也可以作為信息領域其他專業的師生、科研人員和工程技術人員參考資料。
絕緣體上矽（silicon on insulator, SOI）技術在高速、低壓低功耗電路、高壓電路、抗輻射、耐高溫電路、微機械感測器、光電集成等方面具有重要套用，是微電子和光電子領域發展的前沿，被國際上公認為“二十一世紀的矽積體電路技術”。本書收集的納米技術時代的高端矽基SOI材料方面的研究論文40篇，主要內容包括： SOI——納米技術時代的高端矽基材料進展，SOI新材料的製備科學，SOI材料與器件特有的物理效應，絕緣體上鍺矽（silicon germanium on insulator, SGOI）新結構和應變矽的製備科學，SOI技術的若干套用研究等。書中包含了高端矽基材料前沿領域的多方面創新研究成果。
圖書詳細信息:,目錄,
圖書詳細信息:
ISBN:978-7-312-02233-3
定價:88.00元
版本:1
裝幀:軟精裝
出版年月:200906
叢書名稱：當代科學技術基礎理論與前沿問題研究叢書：中國科學技術大學校友文庫
定價:88.00元
版本:1
裝幀:軟精裝
出版年月:200906
叢書名稱：當代科學技術基礎理論與前沿問題研究叢書：中國科學技術大學校友文庫
目錄
SOI——納米技術時代的高端矽基材料進展
納米技術時代的高端矽基材料——SOI、sSOI和GOI
納米技術時代的高端矽基材料——SOI、sSOI和GOI
SOI技術的發展動態
矽基光電子材料和器件的進展和發展趨勢
Fabrication of SiGe-on-insulator and applications for strained Si
Overview of SOI materials technology in China
SOI新材料的製備科學
以注氧隔離（SIMOX）技術製備高阻SOI材料
以注氧隔離（SIMOX）技術製備高阻SOI材料
矽中注H+引起的缺陷和應力以及剝離的機制
以AlN為絕緣埋層的新結構SOAN材料
多孔矽外延層轉移技術製備SOI材料
ELTRAN技術製備雙埋層SOIM新結構
SOI新結構——SOI研究的新動向
Fabrication of silicon-on-AlN novel structure and its residual
strain characterization
strain characterization
Buried tungsten silicide layer in silicon on insulator substrate by Smartcut
Void-free low-temperature silicon directbonding technique
using plasma activation
using plasma activation
Microstructure and crystallinity of porous silicon and epitaxial silicon
layers fabricated on p+ porous silicon
layers fabricated on p+ porous silicon
Formation of silicon-on-diamond by direct bonding of plasmasynthesized
diamondlike carbon to silicon
diamondlike carbon to silicon
Thermal stability of diamondlike carbon buried layer fabricated by
plasma immersion ion implantation and deposition in silicon on insulator
plasma immersion ion implantation and deposition in silicon on insulator
Study of SOI substrates incorporated with buried MoSi2 layer
SOI材料與器件特有的物理效應
SOI MOSFET浮體效應研究
SOI MOSFET浮體效應研究
SOI MOSFET的自加熱效應研究
SOI器件的輻射效應及其在抗輻射電子學方面的套用進展
Evolution of hydrogen and helium co-implanted single-crystal
silicon during annealing
silicon during annealing
Comparison between the different implantation orders in H+ and
He+ co-implantation
He+ co-implantation
Comparison of Cu gettering to H+ and He+ implantationinduced
cavities in separation-by-implantation-of-oxygen wafers
cavities in separation-by-implantation-of-oxygen wafers
Gettering of Cu by microcavities in bonded/ion-cut silicon-on-insulator
and separation by implantation of oxygen
and separation by implantation of oxygen
SGOI新結構和應變矽的製備科學
SIMOX技術製備SGOI新結構的研究
SIMOX技術製備SGOI新結構的研究
改良型Ge濃縮技術製備SGOI及應變Si的研究
絕緣層上鍺材料的研究
Relaxed silicongermanium-on-insulator substrates by oxygen implantation
into pseudomorphic silicon germanium/silicon heterostructure
into pseudomorphic silicon germanium/silicon heterostructure
Germanium movement mechanism in SiGe-on-insulator fabricated
by modified Ge condensation
by modified Ge condensation
Investigation of relaxed SiGe on insulator and strained Si
SOI技術的若干套用研究
納米MOSFET/SOI器件新結構
納米MOSFET/SOI器件新結構
SOI襯底上的無源器件研究
SGOI襯底上高k柵介質的研究
High frequency capacitancevoltage characterization of Al2O3/ZrO2/Al2O3
in fully depleted silicon-on-insulator metal-oxide-semiconductor capacitors
in fully depleted silicon-on-insulator metal-oxide-semiconductor capacitors
Numerical study of self-heating effects of MOSFETs fabricated on
SOAN substrate
SOAN substrate
Si1-xGex/Si resonant-cavity-enhanced photodetectors with a
silicon-on-oxide reflector operating near 1.3 μm
silicon-on-oxide reflector operating near 1.3 μm
Total dose rad-hard improvement for silicon-on-insulator
materials by modifying the buried oxide with ion implantation
materials by modifying the buried oxide with ion implantation
Investigation of H+ and B+/H+ implantation in LiTaO3 singlecrystals
Investigation of SOI substrates incorporated with buried MoSi2 for
high frequency SiGe HBT
high frequency SiGe HBT
