陳志權,畢業於武漢大學,博士、武漢大學物理科學與技術學院教授。
基本介紹
- 中文名:陳志權
- 國籍:中國
- 民族:漢族
- 職業:教師
- 性別:男
- 學歷:博士
- 職稱:教授
人物經歷,學習經歷,工作履歷,研究方向,主要貢獻,科研項目,發表論文,
人物經歷
學習經歷
1987.9—1991.7 武漢大學物理系本科。
1991.9—1993.7 武漢大學物理系碩士研究生(提前攻博)。
1993.9—1996.7 復旦大學物理二系博士研究生。
1996.9—1998.7 武漢大學物理科學與技術學院博士後。
工作履歷
1998.7—1999.5 武漢大學物理科學與技術學院 副教授。
1999.5—1999.11 日本筑波大學物理工學系外國人研究員。
2000.2—2002.2 日本學術振興會(JSPS)外國人特別研究員(ID: P99261)。
2002.6—2005.6 日本原子力研究所研究員(JAERI Research fellow)。
2005.12— 武漢大學物理科學與技術學院 教授。
研究方向
1、半導體材料d0鐵磁性與缺陷間的關係。
2、鋁合金時效過程中的缺陷演變及析出相結構。
3、熱電材料微結構與熱電性能研究。
4、多孔催化劑孔結構及化學環境。
主要貢獻
科研項目
1.用慢正電子技術研究半導體表面界面缺陷 湖北省自然科學基金 2.0萬元 主持 順利結題
2.用正電子湮沒研究重摻雜半導體載流子飽和的微觀機制 武漢大學自強基金 3.0萬元 主持 順利結題
3.寬禁帶半導體ZnO電子輻照引入缺陷及其回復研究 湖北省傑出青年基金 10萬元 主持 順利結題
4.半導體缺陷的正電子譜學研究 教育部青年骨幹教師基金 12萬元 主持 順利結題
5.沸石中半導體納米糰簇材料的正電子研究 國家自然科學基金 20萬元 主持 順利結題
6.ZnO中離子注入摻雜引入缺陷及其對電學和磁學性能的影響 國家自然科學基金 45萬元 主持 順利結題
7.材料缺陷結構三維分布的正電子顯像 973預研 38萬元 主持 順利結題
8.ZnO中缺陷的形成機制及其對材料光學電學性能影響的研究 教育部新世紀優秀人才支持計畫 50萬元 主持 順利結題
9.用正電子湮沒二維都卜勒展寬譜研究鋁合金時效過程中納米析出物的微結構 國家自然科學基金 50萬元 主持 順利結題
10.用正電子湮沒譜學研究熱電材料的缺陷及其對熱電性能的影響 國家自然科學基金 90萬元 主持 正在進行
11.多孔催化劑孔結構及表面活性物質分散狀態的正電子湮沒研究 國家自然科學基金 96萬元 主持 正在進行
2.用正電子湮沒研究重摻雜半導體載流子飽和的微觀機制 武漢大學自強基金 3.0萬元 主持 順利結題
3.寬禁帶半導體ZnO電子輻照引入缺陷及其回復研究 湖北省傑出青年基金 10萬元 主持 順利結題
4.半導體缺陷的正電子譜學研究 教育部青年骨幹教師基金 12萬元 主持 順利結題
5.沸石中半導體納米糰簇材料的正電子研究 國家自然科學基金 20萬元 主持 順利結題
6.ZnO中離子注入摻雜引入缺陷及其對電學和磁學性能的影響 國家自然科學基金 45萬元 主持 順利結題
7.材料缺陷結構三維分布的正電子顯像 973預研 38萬元 主持 順利結題
8.ZnO中缺陷的形成機制及其對材料光學電學性能影響的研究 教育部新世紀優秀人才支持計畫 50萬元 主持 順利結題
9.用正電子湮沒二維都卜勒展寬譜研究鋁合金時效過程中納米析出物的微結構 國家自然科學基金 50萬元 主持 順利結題
10.用正電子湮沒譜學研究熱電材料的缺陷及其對熱電性能的影響 國家自然科學基金 90萬元 主持 正在進行
11.多孔催化劑孔結構及表面活性物質分散狀態的正電子湮沒研究 國家自然科學基金 96萬元 主持 正在進行
發表論文
自1993年以來,共發表SCI論文90餘篇。H-index: 16。近期發表的部分論文如下:
[1]X. F. Li, B. Zhao, T. Zhang, H. F. He, Q. Zhang, D. W. Yang, Z. Q. Chen*, X. F. Tang, Order-disorder transition in clathrate Ba6Ge25studied by positronannihilation. Applied Surface Science, 342, 42-46 (2015)
[2]N. Qi, Z. Q. Chen*, A. Uedono, Molecular motion and relaxation below glass transition temperature in poly (methyl methacrylate) studied by positron annihilation. Radiation Physics & Chemistry, 108, 81-86 (2015)
[3]T. Zhang, K. Zhou, X. F. Li, Z. Q. Chen*, X. L. Su and X. F. Tang, Structural transition of partially Ba-filled thermoelectric CoSb3 investigated by positron annihilation spectroscopy. Journal of Applied Physics 117, 055103 (2015)
[4]X. F. Li, Z. Q. Chen*, C. Liu, H. J. Zhang and A. Kawasuso, Enhanced damage buildup in C+-implanted GaN film studied by a monoenergetic positron beam. Journal of Applied Physics 117, 085706 (2015)
[5]H. F. He, X. F. Li, Z. Q. Chen*, Y. Zheng, D. W. Yang, and X. F. Tang, Interplay between Point Defects and Thermal Conductivity of Chemically Synthesized Bi2Te3 Nanocrystals Studied by Positron Annihilation. Journal of Physical Chemistry C 118, 22389-22394 (2014)
[6]T. Li, D. W. Liu, H. Y. Dai, H. W. Xiang, Z. P. Chen, H. F. He, Z. Q. Chen, Effect of defect on the nonlinear and dielectric property of Ca(1–x)SrxCu3Ti4O12 ceramics synthesized by sol–gel process. Journal of Alloys and Compounds, 599, 145-149 (2014)
[7]M. Jiang, X. D. Xue, Z. Q. Chen*, Y. D. Liu, H. W. Liang, H. J. Zhang, A. Kawasuso, Defects and acceptor centers in ZnO introduced by C+-implantation. Journal of Materials Science, 49, 1994-1999 (2014)
[8]M. Jiang, L. L. Liu, Z. Wang, Z. Q. Chen*, Microstructure of ZnO-Li2CO3 compound studied by positron annihilation spectroscopy. Physca Status Solidi (a) 211, 206-212 (2014)
[9]Z. W. Liu, H. J. Zhang, Z. Q. Chen*, Monolayer dispersion of CoO on Al2O3 probed by positronium atom. Applied Surface Science, 293, 326-331 (2014)
[10]B. Zou, Z.Q. Chen*, C.H. Liu, J.H. Chen, Microstructure evolution of heavily deformed AA5083 Al–Mg alloy studied by positron annihilation spectroscopy. Applied Surface Science, 296, 154-157 (2014)
[11]B. Zou, Z.Q. Chen*, C.H. Liu, J.H. Chen, Vacancy–Mg complexes and their evolution in early stages of aging of Al–Mg based alloys. Applied Surface Science, 298, 50-55 (2014)
[12]D. D. Wang, N. Qi, M. Jiang, Z. Q. Chen*, Defects versus grain size effects on the ferromagnetism of ZrO2 nanocrystals clarified by positron annihilation, Applied Physics Letters, 102, 042407 (2013).
[13]M. Jiang, D. D. Wang, Z. Q. Chen*, S. Kimura, Y. Yamashita, A. Mori, and A. Uedono, Chemical effect of Si+ ions on the implantation-induced defects in ZnO studied by a slow positron beam, Journal of Applied Physics, 113, 043506 (2013)
[14]C. Y. Li, H. J. Zhang, Z. Q. Chen*, Reaction between NiO and Al2O3 in NiO/r-Al2O3 catalysts probed by positronium atom, Applied Surface Science, 266, 17-21 (2013)
[15]Qi Ning, Jia Yan-Lin, Liu Hui-Qun, Yi Dan-Qing, Z. Q. Chen*, Evolution of Defects in Deformed Cu-Ni-Si Alloys during Isochronal Annealing Studied by Positron Annihilation, Chinese Physics Letters, 29, 127803 (2012)
[16]H. J. Zhang, Z. Q. Chen*, and S. J. Wang, Monolayer dispersion of NiO in NiO/Al2O3 catalysts probed by positronium atom, Journal of Chemical Physics, 136, 034701 (2012)
[17]M. Jiang, D. D. Wang, B. Zou, Z. Q. Chen*, A. Kawasuso, and T. Sekiguchi, Effect of high temperature annealing on defects and optical properties of ZnO single crystals, Phys. Status Solidi A 11, 2126 (2012)
[18]Zhi-Yuan Chen, Z. Q. Chen*, B. Zou, X. G. Zhao, Z. Tang, and S. J. Wang, Defect mediated ferromagnetism in Ni-doped ZnO nanocrystals evidenced by positron annihilation spectroscopy, Journal of Applied Physics, 112, 083905 (2012)
[19]D. D. Wang, Z. Q. Chen*, C. Y. Li, X. F. Li, C. Y. Cao, Z. Tang, Correlation between ferromagnetism and defects in MgO nanocrystals studied by positron annihilation, Physica B: Condensed Matter, 407, 2665-2669 (2012) (他引1次)
[20]S. H. Huang, Z. Q. Chen*, H. J. Zhang, Three-gamma annihilation of ortho-positronium in NiO/γ-Al2O3 catalysts detected by positron lifetime and coincidence Doppler broadening measurements, Radiation Physics and Chemistry, 81, 791-795 (2012)
[21]Zhang Hong-Jun, Liu Zhe-Wen, Z. Q. Chen*, S. J. Wang, Chemical Quenching of Positronium in CuO/Al2O3 Catalysts, Chinese Physics letters, 28, 017802 (2011)
[22]Qi Ning, Wang Yuan-Wei, Wang Dong, Wang Dan-Dan, Z. Q. Chen*, Positron annihilation study of the microstructure of Co doped ZnO nanocrystals, Acta Phys. Sin. 60, 107805 (2011)) (他引2次)
[23]Zhi-Yuan Chen, Z. Q. Chen*, D. D. Wang, S. J. Wang, Correlation between interfacial defects and ferromagnetism of BaTiO3 nanocrystals studied by positron annihilation, Applied Surface Science, 258, 19-23 (2011) (他引4次)
[24]Dong Wang, Z. Q. Chen*, D. D. Wang, J. Gong, C.Y. Cao, Z. Tang, L.R. Huang, Effect of thermal annealing on the structure and magnetism of Fe-doped ZnO nanocrystals synthesized by solid state reaction, Journal of Magnetism and Magnetic Materials, 322, 3642-3647 (2010) (他引7次)
[25]C. Li, H.J. Zhang, Z. Q. Chen*, Chemical quenching of positronium in Fe2O3/Al2O3 catalysts, Applied Surface Science, 256, 6801-6804 (2010)
[26]H. J. Zhang, Z. Q. Chen*, S. J. Wang, A. Kawasuso and N. Morishita, Spin conversion of positronium in NiO/Al2O3 catalysts observed by coincidence Doppler broadening technique, Phys. Rev. B 82, 035439 (2010)
[27]D. Wang, Z. Q. Chen*, D. D. Wang, N. Qi, J. Gong, C. Y. Cao, and Z. Tang, Positron Annihilation study of the interfacial defects in ZnO nanocrystals: Correlation with ferromagnetism, J. Appl. Phys. 107, 023524 (2010) (他引25次)
[28]D. Wang, Z. Q. Chen*, F. Zhou, W. Lu, M. Maekawa, A. Kawasuso, Ferromagnetism and microstructure in Fe+-implanted ZnO, Applied Surface Science, 255, 9371-9375 (2009) (他引3次)
[29]Z. Q. Chen, K. Betsuyaku, A. Kawasuso, Vacancy defects in electron-irradiated ZnO studied by Doppler broadening of annihilation radiation, Phys. Rev. B 77, 113204 (2008) (他引16次)
[30]Z. Q. Chen, M. Maekawa, A. Kawasuso, and H. Naramoto, Ion species dependence of the implantation-induced defects in ZnO studied by a slow positron beam, Phys. Stat. Sol. (c) 4, 3646 (2007) (他引1次)
[31]X. Q. Meng, Z. Q. Chen, P. Jin, Z. G. Wang, and Long Wei, Defects around self-organized InAs quantum dots measured by slow positron beam, Appl. Phys. Lett. 91, 093510 (2007) (他引4次)
[32]Z. Q. Chen, S. J. Wang, M. Maekawa, A. Kawasuso, H. Naramoto, X. L. Yuan, and T. Sekiguchi, Thermal evolution of defects in as-grown and electron-irradiated ZnO studied by positron annihilation, Phys. Rev. B 75, 245206 (2007) (他引37次)
[33]Z. Q. Chen, A. Kawasuso, Vacancy-type defects induced by He-implantation in ZnO studied by a slow positron beam, Acta Phys. Sin. 55, 4353 (2006) (他引1次)
[34]Z. Q. Chen, M. Maekawa, A. Kawasuso, S. Sakai, and H. Naramoto, Annealing process of ion-implantation-induced defects in ZnO: Chemical effect of the ion species, J. Appl. Phys. 99, 093507 (2006) (他引33次)
[35]Z. Q. Chen, M. Maekawa, A. Kawasuso Energy Variable Slow Positron Beam Study of Li+-Implantation-Induced Defects in ZnO, Chinese Physics Letters, 23, 675 (2006) (他引3次)
[36]Z. Q. Chen, M. Maekawa, A. Kawasuso, S. Sakai, and H. Naramoto, Electron Irradiation Induced Defects in ZnO Studied by Positron Annihilation, Physica B 376-377, 722 (2006) (他引12次)
[37]Z. Q. Chen, M. Maekawa, A. Kawasuso, R. Suzuki, and T. Ohdaira, Interaction of nitrogen with vacancy defects in N+-implanted ZnO studied using a slow positron beam. Appl. Phys. Lett. 87, 091910 (2005) (他引18次)
[38]Z. Q. Chen, A. Kawasuso, Y. Xu, H. Naramoto, X. L. Yuan, T. Sekiguchi, R. Suzuki, and T. Ohdaira, Microvoid formation in hydrogen-implanted ZnO probed by a slow positron beam. Phys. Rev. B71, 115213 (2005) (他引54次)
[39]Z. Q. Chen, S. Yamamoto, A. Kawasuso, Y. Xu, and T. Sekiguchi, Characterization of homoepitaxial and heteroepitaxial ZnO films grown by pulsed laser deposition. Appl. Surf. Sci. 244, 377 (2005) (他引14次)
[40]Z. Q. Chen, A. Kawasuso, Y. Xu, H. Naramoto, X. L. Yuan, T. Sekiguchi, R. Suzuki, and T. Ohdaira, Production and recovery of defects in phosphorus implanted ZnO. J. Appl. Phys. 97, 013528 (2005) (他引93次)
[41]Z. Q. Chen, M. Maekawa, S. Yamamoto, A. Kawasuso, X. L. Yuan, T. Sekiguchi, R. Suzuki, and T. Ohdaira, Evolution of voids in Al+-implanted ZnO probed by a slow positron beam. Phys. Rev. B69, 035210(2004) (他引56次)
[42]Z. Q. Chen, M. Maekawa, T. Sekiguchi, R. Suzuki and A. Kawasuso, Ion-implantation Induced Defects in ZnO Studied by a Slow Positron Beam. Material Science Forum, Vol.445-446, 57(2004) (他引3次)
[43]Z. Q. Chen, T. Sekiguchi, X. L. Yuan, M. Maekawa, and A. Kawasuso, N+ ion-implantation induced defects in ZnO studied by slow positron beam. J.Phys.:Condens.Matter, 16, S293(2004) (他引16次)
[44]Z. Q. Chen, S. Yamamoto, M. Maekawa, A. Kawasuso, X. L. Yuan and T. Sekiguchi, Postgrowth annealing of defects in ZnO studied by positron annihilation, X-ray diffraction, Rutherford backscattering, cathodoluminescence and Hall measurements. J. Appl. Phys. 94, 4807(2003) (他引101次)
[45]Z. Q. Chen, A. Uedono, T. Suzuki and J.S. He, Positron Annihilation Study of Free Volume Holes in Polymers and Polymer Blends. J. Radioanal.& Nucl. Chem., Vol.255, no.2, 291-294(2003)(他引6次)