鐘志親

鐘志親，2007畢業於四川大學微電子專業，獲得博士學位。2007年參加工作，現為電子科技大學微電子與固體電子學院電子薄膜與集成器件國家重點實驗室副教授。

基本介紹

• 中文名：鐘志親
• 職稱：副教授

人物簡歷

教育背景

2002.09－2007.06 四川大學，微電子專業，碩博連讀

1998.09－2002.06 四川大學，微電子技術專業，學士學位

工作戀膠漏辯履歷

2007.07－現在 電子科技大學 電子薄膜與集成器件國家重點實驗室

研究方向

研究方向

半導體單項工藝研究

光刻、刻蝕、薄膜沉積等

寬禁帶半導體器件與工藝研究

研究SiC器件與工藝

納米器件

納米級MOS器件及GaAs納米線光電器件

研究條件

電講台試戀子薄膜與集成器件國家重點實驗室擁有國際一流的科研裝備條件，建成涵蓋了器件/電路設計、薄膜材料製備、器件微細加工與分析測試等工藝流程的4個平台。煉店凝電路設計平台擁有多台Sun、Dell工作站及微波電路設計與仿真軟體；薄膜製備與處理工藝平台包括射頻/直流磁控濺射系統、脈衝雷射沉積系統(PLD)、雷射分子束外延系統(L-MBE)、蒸愉棄章發系統以及退棄愉烏火爐、快速晶化爐等；微細加工平台擁有1000級超淨間、4~6英寸基片0.56微米和1.2微米光刻機、反應離子刻蝕機等，可完成各種薄膜集成器件的研究和旋熱小批量製作；分析和性能測試平台包括掃描電鏡、腳甩尋掃描探針顯微鏡、透射電子顯微鏡、X射線衍射儀，以及LCR儀、矢量網路分析儀、阻抗分析儀等。

榮譽獎勵

2013年，電子科技大學先進個人

2006年，芯源一等獎學金

代表性論文

1. Morphological and compositional changes in the SiO2/SiC interfacial layer induced by thermal annealing of different temperature

Zhiqin Zhong, Luda Zheng, Shuya Wang, et al. Advanced Materials Research, 2014, 884-885:304-307

2. Effect of Ar annealing temperature on the densification of SiO2 film grown by thermal oxidation on 4H-SiC

ZHONG Zhi-qin, SUN Zi-jiao, GE Wei-wei, et al. Journal of University of Electronic Science and Technology of China, 2014,43(2):292-295

3. Effect of Ar annealing temperature on SiO2/SiC: SiO2densification change causing leakage current reduction

Zhiqin Zhong, Zijiao Sun, Shuya Wang, et al. The European Physical Journal Applied Physics, 2013, 62(2): 20301

4. Effect of Ar annealing on oxide-4H-SiC interface studied by spectroscopic ellipsometry and atomic force microscopy

Zhiqin Zhong, Guojun Zhang, Shuya Wang, et al. Materials Science in Semiconductor Processing, 2013, 16: 2028-2031

5. Effect of Different Annealing Temperature on 4H-SiC Schottky Diodes,

Sun Zijiao,Zhong Zhiqin, Wang Shuya, et al. Piezoelectrics & Acoustooptics, 2013, 35:419-422

6. Inductively Coupled Plasma Etching of Pt/Ti Electrodes in Cl-Based Plasma

Z.Q. Zhong, C.T. Yang, G.J. Zhang, S.Y. Wang and L.P. Dai, Advanced Materials Research, 2013, 721: 346-349

7. Spectroscopic Ellipsometry Study on Hydrogenated Amorphous Silicon Thin Films Deposited by Low Frequency PECVD

ZHONG Zhiqin, ZHANG Guojun, WANG Shuya, et al. Semiconductor optoelectronic, 2012，33(3):385-389

8. Aluminum Nitride Flims Fabricated by Mid-frequency Magnetron Sputtering

Zhong Zhiqin, Zhang Guojun, Yangjie, et al. Semiconductor Phonics and Technology, 2010, 16(4):127-131

9. Etching mechanism of barium strontium titanate (BST) thin films in CHF3/Ar plasma

DAI LiPing, WANG ShuYa, SHU Ping, ZHONG ZhiQin, et al, Chinese Science Bulletin, 2011, 56(21):2267-2271

10. Study on the BST film covered junction terminal of power semiconductor device

Ge Weiwei, Zhang Guojun, Zhong Zhiqin, et al, Electronic Components and Materials, 2012, 31(12):46-49

11. Optimization Design of LDMOS Device with Drift Region Covered by High-k Thin Film

WANG Weibin, ZHAO Yuanyuan, ZHONG Zhiqin, et al. Microelectronics, 2011, 42(2):261-265

12. Study on the Spring Constant of O-Shaped MEMS Planar Microsprings

Wu Pengfei, Zhang Guojun, Zhong Zhiqin, et al. Micronanoelectronic Technology, 2011, 48(10):660-663

Zhiqin Zhong, Zijiao Sun, Shuya Wang, et al. The European Physical Journal Applied Physics, 2013, 62(2): 20301

4. Effect of Ar annealing on oxide-4H-SiC interface studied by spectroscopic ellipsometry and atomic force microscopy

Zhiqin Zhong, Guojun Zhang, Shuya Wang, et al. Materials Science in Semiconductor Processing, 2013, 16: 2028-2031

5. Effect of Different Annealing Temperature on 4H-SiC Schottky Diodes,

Sun Zijiao,Zhong Zhiqin, Wang Shuya, et al. Piezoelectrics & Acoustooptics, 2013, 35:419-422

6. Inductively Coupled Plasma Etching of Pt/Ti Electrodes in Cl-Based Plasma

Z.Q. Zhong, C.T. Yang, G.J. Zhang, S.Y. Wang and L.P. Dai, Advanced Materials Research, 2013, 721: 346-349

7. Spectroscopic Ellipsometry Study on Hydrogenated Amorphous Silicon Thin Films Deposited by Low Frequency PECVD

ZHONG Zhiqin, ZHANG Guojun, WANG Shuya, et al. Semiconductor optoelectronic, 2012，33(3):385-389

8. Aluminum Nitride Flims Fabricated by Mid-frequency Magnetron Sputtering

Zhong Zhiqin, Zhang Guojun, Yangjie, et al. Semiconductor Phonics and Technology, 2010, 16(4):127-131

9. Etching mechanism of barium strontium titanate (BST) thin films in CHF3/Ar plasma

DAI LiPing, WANG ShuYa, SHU Ping, ZHONG ZhiQin, et al, Chinese Science Bulletin, 2011, 56(21):2267-2271

10. Study on the BST film covered junction terminal of power semiconductor device

Ge Weiwei, Zhang Guojun, Zhong Zhiqin, et al, Electronic Components and Materials, 2012, 31(12):46-49

11. Optimization Design of LDMOS Device with Drift Region Covered by High-k Thin Film

WANG Weibin, ZHAO Yuanyuan, ZHONG Zhiqin, et al. Microelectronics, 2011, 42(2):261-265

12. Study on the Spring Constant of O-Shaped MEMS Planar Microsprings

Wu Pengfei, Zhang Guojun, Zhong Zhiqin, et al. Micronanoelectronic Technology, 2011, 48(10):660-663