謝愛根，男，博士，1971年生，南京信息工程大學教授。
基本介紹
- 中文名：謝愛根
- 學位/學歷：博士
- 職業：教師
- 專業方向：二次電子發射理論
- 任職院校：南京信息工程大學
個人經歷,主講課程,研究方向,學術成果,
個人經歷
教育經歷：
1993.9-1997.7安徽大學，套用物理專業，獲學士學位。
1997.9-2000.7中國科學院電漿所，電漿物理專業，碩士學位。
工作經歷：
2000.7-2002.9中國兵器工業部214所離子注入組組長。
2005.7-2008.7南京信息工程大學數理學院講師。
2008.7-2015.3南京信息工程大學物理與光電工程學院副教授。
2015.3-2016.3 韓國光雲大學電子與生物物理系副教授。
2016.3-現在 南京信息工程大學物理與光電工程學院副教授。
主講課程
本科課程：近代物理、半導體物理、熱力學、大學物理實驗1、大學物理、 超導電性及套用等。
研究生課程：電漿物理導論，磁流體力學。
研究方向
1. 二次電子發射理論（當前主要的研究方向）
2.太空飛行器充電(空間天氣學)
3.二次電子發射係數測量裝置的研製
學術成果
科研項目：
1.微波電子槍的研製，國家創新工程，2002-2005（參加）；
2. 二次電子發射的研究和有效真二次電子發射係數的測量，南京信息工程大學科研基金，2006-2009（主持）；
3.2015.01-2018.12. 國家自然科學基金（面上項目,第二參與）.基於主動光學技術實現寬視場光譜儀準直系統方法的研究，基金號：11473049。
論文發表
近年代表性論文（第一作者且為通訊作者）
[1] The formula for the secondary electron yield at high incident electron energy from silver and copper，Nuclear Instruments and Methods in Physics Research B，267.2009.Ai-Gen Xie, Hao-Feng Zhao,Biao Song,Yuan-Ji Pei. SCI收錄。
[2] The formulae for the secondary electron yield at high incident electron energy from gold and aluminum，Modern physics letters B，23.2009.Ai-Gen Xie,Quan-Qi Li,Tie-Bang Wang,Yuan-Ji Pei. SCI收錄。
[3] The measurements of total electron yield from silver，Eur. Phys. J. Appl. Phys，48.2009.Ai-Gen Xie,Quan-Qi Li,Ling Wang,Yuan-Ji Pei. SCI收錄。
[4] Xie Ai-Gen*, Zhao Hao-Feng,Wang Tie-Bang. Ratio of the mean secondary electron generation of backscattered electrons to primary electrons at high electron energy [J]，Nuclear Instruments and Methods in Physics Research B, 268(6), pp687-689,2010. SCI收錄。
[5] Xie Ai-Gen*, Yao Yi-Jun, Su Jin, Zhang Jian. A universal formula for secondary electron yield from metals，Nuclear Instruments and Methods in Physics Research B，268(15), pp2565-2579,2010. SCI收錄。
[6] Xie Ai-Gen*, Zhang Jian, Wang Tie-Bang. Universal Formula for Secondary Electron Yield of Metals at High Electron Energy and Incident Angle θ, Japanese Journal of Applied Physics, 50(12), pp126601-126601-4,2011. SCI收錄。
[7] Xie Ai-Gen*, Zhang Jian, Wang Tie-Bang. A Universal formula for the secondary electron yield of metals at an incident angle of θ，Chinese Physics Letters，28(9), pp 097901-1-197901-4,2011. SCI收錄。
[8] Xie Ai-Gen*, Xiao Shao-Rong, Zhan Yu, Zhao Hao-Feng. Formula for the probabilty of secondary electrons passing over the surface barrier into vacuum[J]，Chinese Physics Letters，29(11), pp117901-117901-4,2012. SCI收錄。
[9] Xie Ai-Gen*, Li Qing-Fang, Cheng Yun-Yun, Wu Hong-Yan. The formulae for parameters of the secondary electron yield of insulators from 10 keV to 30 keV, Modern Physics Letters B, 27(32), pp1350238-1350248,2013.
[10] Xie Ai-Gen*, Xiao Shao-Rong, Wu Hong-Yan. Mean escape depth of secondary electrons emitted from semiconductors and insulators, Indian Journal of Physics, 87(11), pp 1093-1097,2013. SCIE收錄。
[11] Xie Ai-Gen*, Zhan Yu, Gao Zhi-Yong, Wu Hong-Yan.Formula for average energy required to produce a secondary electron in insulator, Chinese Physics B, 22(5), pp 057901-3,2013. SCI收錄。
[12] Xie Ai-Gen*, Wu Hong-Yan, Xu Jia.Parameters of the secondary electron yield from metal, Journal of the Korean Physical Society, 62(5), pp 725-730,2013. SCI收錄。
[13] Xie Ai-Gen*, Lai Min, Zhang Cheng-Yi. Formula for THE total stopping power from 2 keV to 10 keV for a metal, Journal of the Korean Physical Society, 62(1), pp 127-131,2013. SCI收錄。
[14] Xie Ai-Gen*, Zhang Chen-Yi, Zhong Kun. Two contributions to the ratio of the mean secondary electron generation of backscattered electrons to primary electrons at high electron energy. Modern Physics Letters B, 28(6), pp 1450046-1-1450046-9,2014. SCI收錄。
[15] Xie Ai-Gen*, Lai Min, Chen Yu Lin, et al. Formulae for secondary electron yield and the ratio of the average number of secondary electrons generated by a single backscattered electron to that generated by a single primary electron. Indian Journal of Pure & Applied Physics, 53(5), pp 298-303,2015. SCIE收錄。
[16] Xie Ai-Gen*, Wang Ling, Mu Liu Hua. Formula for maximum secondary electron yield from metals. Surface Review and Letters, 22(2), pp 1550019,2015. SCI收錄。
[17] Xie Ai-Gen*, Han-Sup Uhm, Chen Yu-Yu, et al. Maximum secondary electron yield and parameters of secondary electron yield of metals. Surface Review and Letters, 23(5), pp 1650039,2016. SCI收錄。
[18] Xie Ai-Gen*, Xiao Shao-Rong, Wang Ling.Formulae for the secondary electron yield and total stopping power from 0.8 keV to 10 keV for metals. PRAMANA-JOURNAL OF PHYSICS, 86(5), pp 1127-1141,2016. SCI收錄。
[19] Xie Ai-Gen*, Zhon Kun, Zhao De-Lin, et al.Formulae for low-energy secondary electron yield from different kinds of emitters as a function of measurable variables. Modern Physics Letters B, 31(10), pp 1750105-1-1750105-11,2017. SCI收錄。
[20] Xie Ai-Gen*, Liu Zhan-Hui, Xia Yu-Qing, et al. Maximum secondary electron yields from semiconductors and insulators. Surface Review and Letters, 24(3), pp 1750045,2017. SCI收錄。
[21] Xie Ai-Gen*, Lai Min, Chen Yu Lin, et al. Formulae for secondary electron yield from insulators and semiconductors. Nuclear Science and Technology. 28(10), pp 1750045,2017. SCIE收錄。
[22] Xie Ai-Gen*, Xia Yu-Qing, Wang Xing, et al. Formulae for maximum yield and mean escape depth of secondary electrons emitted from metals. Modern Physics Letters B,
[23] Xie Ai-Gen*, Liu Hao-Yu, Yu Yang, et al. Formulae for maximum escape depth f rediffused electrons and backscattering coefficient of metal films. Surface Review and Letters。
