莫炯炯，女，2014年9月瑞典隆德大學博士後研究員畢業，浙江大學副教授。
基本介紹
- 中文名：莫炯炯
- 畢業院校：瑞典隆德大學
- 學位/學歷：博士
- 專業方向：半導體材料器件，微電子納米技術
人物經歷,專利成果,科研項目,研究與成果,
人物經歷
2018-07至今, IMEC，訪問學者
2015-05至今, 浙江大學，航空航天學院，航天電子工程研究所，講師
2012-09至2014-09, 瑞典隆德大學，電子與信息工程學院, 博士後研究員
2009-01至2012-07, 法國里爾科學與技術大學, 微電子, 博士, 導師：Sylvain Bollaert
2008-01至2008-12, 美國喬治亞理工學院, 電子與計算機工程, 碩士, 導師：John D Cressler
2006-09至2008-07, 法國里爾科學與技術大學, 微電子, 碩士, 導師：Francois Danneville
2002-09至2006-07, 上海大學, 電子科學與技術專業, 本科
專利成果
所有專利人員姓名 | 周旻，莫炯炯，李博，朱恆，陳湜，許慧，郁發新 | ||||
|---|---|---|---|---|---|
專利名稱 | 空氣橋側引的pHMET微波功放管芯橫向結構及pHEMT | ||||
專利類型 | 發明專利 | 專利授權國 | 中國 | 專利號 | ZL201510589789.3 |
項目名稱 | 低功耗III-V族非對稱型MOSFET器件設計與可靠性研究 | ||||
|---|---|---|---|---|---|
項目來源 | 國家基金委 | 項目編號 | KN20160897 | 起始年月 | 2017-01-01 |
終止年月 | 2019-12-31 | 經費總額(萬元) | 22.64/24 | 本人排名/總人數 | 1/1 |
科研項目
項目名稱 | 矽基功率管的可靠性研究 | ||||
|---|---|---|---|---|---|
項目來源 | 浙江省教育廳 | 項目編號 | N20150244 | 起始年月 | 2015-10-01 |
終止年月 | 2017-10-31 | 經費總額(萬元) | 2/2 | 本人排名/總人數 | 1/1 |
研究與成果
C Wei, M Zhou, K Ding, FX Yu, JJ Mo, XL Zhao, Compact wideband dual circularly polarized L‐shaped slot antenna, Microwave and Optical Technology Letters 60 (7), 1685-1691, 2018
M Zhou, J Mo, Z Wang, A Ka-band low power consumption MMIC core chip for T/R modules, AEU-International Journal of Electronics and Communications 91, 37-43, 2018
G Wang, J Liu, S Xu, J Mo, Z Wang, F Yu, The Design of Broadband LNA with Active Biasing based on Negative Technique, INFORMACIJE MIDEM-JOURNAL OF MICROELECTRONICS ELECTRONIC COMPONENTS, 2018
D Xu, Z Wang, J Liu, M Zhou, W Chen, H Chen, J Mo, F Yu, All-in-One Wafer-Level Solution for MMIC Automatic Testing, Electronics 7 (5), 57, 2018
G Wang, W Chen, J Liu, J Mo, H Chen, Z Wang, F Yu, Design of a broadband Ka-band MMIC LNA using deep negative feedback loop, IEICE Electronics Express 15 (10), 20180317-20180317, 2018
ZY Wang, JP Qiu, H Chen, JJ Mo, FX Yu, Retrieval of high-order susceptibilities of nonlinear metamaterials, Chinese Physics B 26 (9), 094207, 2017
J Mo, H Chen, L Wang, F Yu, Total Ionizing Dose Effect and Single Event Burnout of VDMOS with Different Inter Layer Dielectric and Passivation, Journal of Electronic Testing 33 (2), 255-259, 2017
B Hou, H Chen, Z Wang, J Mo, J Chen, F Yu, W Wang, A 11 mW 2.4 GHz 0.18 μm CMOS Transceivers for Wireless Sensor Networks, Sensors 17 (2), 223, 2017
J Mo, X Zhao, M Zhou, Total Ionizing Dose Effects of Si Vertical Diffused MOSFET with SiO2 and Si3N4/SiO2 Gate Dielectrics, Active and Passive Electronic Components, 2017
W Chen, Z Wang, H Chen, Z Huang, J Mo, 4–20 GHz low noise amplifier MMIC with on-chip switchable gate biasing circuit, IEICE Electronics Express 14 (18), 20170711-20170711, 2017
J Mo, H Chen, Z Wang, F Yu, High Frequency InGaAs MOSFET with Nitride Sidewall Design for Low Power Application, Journal of Sensors, 2017
X Xu, J Mo, W Chen, Z Wang, Y Shang, Y Wang, Q Zheng, L Wang, A new meshing criterion for the equivalent thermal analysis of GaAs PHEMT MMICs, Microelectronics Reliability 68, 30-38, 2017
J Qiu, T Liu, X Chen, Y Shang, J Mo, Z Wang, H Chen, J Liu, J Lv, F Yu, A New Digital to Analog Converter Based on Low-Offset Bandgap Reference, Journal of Electrical and Computer Engineering, 2017
D Zhu, J Mo, S Xu, Y Shang, Z Wang, Z Huang, F Yu, A New Capacitance-to-Frequency Converter for On-Chip Capacitance Measurement and Calibration in CMOS Technology, Journal of Electronic Testing 32 (3), 393-397, 2016
Y Shang, H Xu, J Mo, Z Wang, X Xu, Z Tu, X Zhang, H Zheng, W Chen, The Design and Thermal Reliability Analysis of a High-Efficiency K-Band MMIC Medium-Power Amplifier with Multiharmonic Matching, Active and Passive Electronic Components, 2016
J Mo, X Zhao, Regrown source/drain based InGaAs MOSFET with Si3N4 nitride spacer, ECS Journal of Solid State Science and Technology 5 (10), Q257-Q259, 2016
G Roll, J Mo, E Lind, S Johansson, LE Wernersson, Effect of Gate Voltage Stress on InGaAs MOSFET With HfO2 or Al2O3 Dielectric, IEEE Transactions on Device and Materials Reliability 16 (2), 112-116, 2016
G Roll, J Mo, E Lind, S Johansson, LE Wernersson, Defect evaluation in InGaAs field effect transistors with HfO2 or Al2O3 dielectric, Applied Physics Letters 106 (20), 203503, 2015
J Mo, E Lind, LE Wernersson, InP drain engineering in asymmetric InGaAs/InP MOSFETs, IEEE Transactions on Electron Devices 62 (2), 501-506, 2015
J Mo, E Lind, G Roll, LE Wernersson, Reduction of off-state drain leakage in InGaAs-based metal-oxide-semiconductor field-effect transistors, Applied Physics Letters 105 (3), 033516, 2014
J Mo, E Lind, LE Wernersson, Asymmetric InGaAs/InP MOSFETs with source/drain engineering, IEEE Electron Device Letters 35 (5), 515-517, 2014。
