戴明志， 寧波工業技術研究院新能源技術研究研究員 博士，副研究員。
基本介紹
- 中文名：戴明志
- 國籍：中國
- 民族：漢
- 職業：研究員
- 畢業院校：復旦大學
- 性別：女
個人履歷,研究方向,論文專利,研究項目,榮譽獎勵,
個人履歷
2003年7月獲復旦大學材料科學系電子科學與技術專業理學學士學位，
2008年7月獲中國科學院上海微系統與信息技術研究所工學博士學位。
2009年赴美國耶魯大學電子工程系從事研究工作，包括鐵電材料存儲器科研項目的物理機制、工藝、模型方面工作。
2010年8月以“春蕾行動”引進，任新能源所副研究員，從事納米電子學方面的研究，包括太陽能、薄膜電晶體等。
目前已被Appl. Phy. Lett.、IEEE Electron Device Letters、 IEEE Trans. on Electron Devices等一系列SCI/EI雜誌發表或接收10餘篇文章，申請中國專利3項，已獲批專利1項。
研究方向
納米器件光電特性表征、模擬、設計與工藝改進；
薄膜電晶體和太陽能電池的套用研究；
論文專利
以第一作者發表JCR1區論文2篇（其中1篇獲中科院寧波材料所首屆最佳論文獎），2區論文7篇，申請專利6項。
[1] M. Dai and Q. Wan. Modeling Novel Double-in-Plane Gate Electric-Double-Layer Thin-Film and Nanoscale Transistors Nano Lett. 11, 3987 (2011)
[2] M. Dai, G. Wu, Y. Yang, J. Jiang, L. Li, and Q. Wan. Modeling of Low-Voltage Oxide-Based Electric-Double-Layer Thin-Film Transistors Fabricated at Room Temperature. Applied Physics Letter 98, 093506 (2011)
[3] M. Dai, G. Wu, Y. Yang, J. Huang, L. Li, J. Gong, and Q. Wan. Modeling of Self-Assembled Inorganic Oxide Semiconductor Based Electric-Double-Layer Thin Film Transistors. Appl. Phys. Lett. 98, 153501 (2011)
[4] M. Dai, Y. Yang, G. Wu, L. Li, J. Huang, J.Jiang, and Q. Wan. Density-of-State and Trap Modeling of Oxide-Based Electric-Double-Layer TFTs. IEEE Electron Device Letters 32, 512 (2011)
[5] M. Dai. Lifetime Model for Advanced N-Channel Transistor Hot-Carrier-Injection Degradation. IEEE Electron Dev. Lett. 31, 525 (2010)
[6] M. Dai, C. Gao, K. Yap, Y. Shan, Z. Cao, K. Liao, L. Wang, B. Cheng, S. Liu. A Model With Temperature-Dependent Exponent for Hot-Carrier Injection in High-Voltage nMOSFETs Involving Hot-Hole Injection and Dispersion. IEEE Trans. on Electron Devices 55, 1255 (2008)
[7] M. Dai, A. Yap, K. Huang, S. Y. Huang, J. Wang, S. Wang, I. Jiang, W. J. Zhang, L. Yi, A. Cheng, S. H. Liu, and K. Y. Liao. Modified Substrate Current Model for High Voltage N-Channel Metal-Oxide-Semiconductor Transistor and Its Implication on Transistor Design. Appl. Phys. Lett. 91, 233504 (2007)
[8] A. Lu, M. Dai, J. Sun, J.Jiang, and Q. Wan. Flexible Low-Voltage Electric-Double-Layer TFTs Self-Assembled on Paper Substrates. IEEE Electron Device Letters 32, 518 (2011)
[9] J. Jiang, M. Dai, J. Sun, B.Zhou, A. Lu, and Q. Wan. Electrostatic Modification of Oxide Semiconductors by Electric Double Layers of Microporous SiO2-based Solid Electrolyte. Journal of Applied Physics,109, 054501(2011)
[10] M. Dai and K. Yap. Observation and mechanism explanation of the parasitic charge pumping current. Microelectronics Reliability 50, 1915 (2010)
[11] M. Dai, S. Kim, A.Yap, S. Liu, A. Cheng and L. Yi. A unification of interface-state generation and hole-injection for hot-carrier-injection stress in low and high-voltage NMOSFET. Microelectronics Reliability 48, 504 (2008)
[3] M. Dai, G. Wu, Y. Yang, J. Huang, L. Li, J. Gong, and Q. Wan. Modeling of Self-Assembled Inorganic Oxide Semiconductor Based Electric-Double-Layer Thin Film Transistors. Appl. Phys. Lett. 98, 153501 (2011)
[4] M. Dai, Y. Yang, G. Wu, L. Li, J. Huang, J.Jiang, and Q. Wan. Density-of-State and Trap Modeling of Oxide-Based Electric-Double-Layer TFTs. IEEE Electron Device Letters 32, 512 (2011)
[5] M. Dai. Lifetime Model for Advanced N-Channel Transistor Hot-Carrier-Injection Degradation. IEEE Electron Dev. Lett. 31, 525 (2010)
[6] M. Dai, C. Gao, K. Yap, Y. Shan, Z. Cao, K. Liao, L. Wang, B. Cheng, S. Liu. A Model With Temperature-Dependent Exponent for Hot-Carrier Injection in High-Voltage nMOSFETs Involving Hot-Hole Injection and Dispersion. IEEE Trans. on Electron Devices 55, 1255 (2008)
[7] M. Dai, A. Yap, K. Huang, S. Y. Huang, J. Wang, S. Wang, I. Jiang, W. J. Zhang, L. Yi, A. Cheng, S. H. Liu, and K. Y. Liao. Modified Substrate Current Model for High Voltage N-Channel Metal-Oxide-Semiconductor Transistor and Its Implication on Transistor Design. Appl. Phys. Lett. 91, 233504 (2007)
[8] A. Lu, M. Dai, J. Sun, J.Jiang, and Q. Wan. Flexible Low-Voltage Electric-Double-Layer TFTs Self-Assembled on Paper Substrates. IEEE Electron Device Letters 32, 518 (2011)
[9] J. Jiang, M. Dai, J. Sun, B.Zhou, A. Lu, and Q. Wan. Electrostatic Modification of Oxide Semiconductors by Electric Double Layers of Microporous SiO2-based Solid Electrolyte. Journal of Applied Physics,109, 054501(2011)
[10] M. Dai and K. Yap. Observation and mechanism explanation of the parasitic charge pumping current. Microelectronics Reliability 50, 1915 (2010)
[11] M. Dai, S. Kim, A.Yap, S. Liu, A. Cheng and L. Yi. A unification of interface-state generation and hole-injection for hot-carrier-injection stress in low and high-voltage NMOSFET. Microelectronics Reliability 48, 504 (2008)
研究項目
主持多項科研項目，包括國際合作項目、國家自然科學基金、寧波市自然科學基金、中科院寧波材料所“春蕾行動”計畫等；作為骨幹參與國家自然科學基金面上項目、中科院知識創新工程重要方向性項目等。
榮譽獎勵
入選中科院青年創新促進會；
入選“寧波市領軍拔尖人才培養工程”；
入選中國科學院寧波工研院“春蕾計畫”；
