張佰君(中山大學電子與信息工程學院教授):學術兼職,人物經歷,教授課程,研究方向,

張佰君，男，博士，中山大學電子與信息工程學院教授、博士生導師。

基本介紹

中文名：張佰君
畢業院校：吉林大學
學位/學歷：博士
專業方向：半導體物理與器件
職務：中山大學博士生導師
職稱：教授

學術兼職,人物經歷,教授課程,研究方向,學術成果,科研項目,代表性論著,

學術兼職

1、《功能材料》第七屆、第八屆編輯委員會委員

2、粵港澳合作促進會信息科技專業委員會會員

人物經歷

1994.9-1997.12 吉林大學半導體物理與器件，博士

1991.9-1994.07 吉林大學半導體物理與器件，碩士

1987.9-1991.07 吉林大學半導體物理，本科

2000年5月於中國科學院半導體研究所博士後出站；

2000年5月-2002年5月，日本名古屋工業大學JSPS特別研究員（日本學術振興會（JSPS）資助）；

2006年9月回國，入選中山大學百人計畫教授。

教授課程

本科生課程：1、半導體光電子器件；2、半導體光電材料與器件；3、光電器件製造工程技術

研究生課程：1、新型半導體發光器件；2、半導體光電器件基礎

研究方向

1、寬禁帶GaN基半導體發光材料與器件；2、微納尺度GaN基發光器件；3、半導體生物感測器；4、GaN基太赫茲器件

學術成果

科研項目

近年主持與參加的科研項目：

1、國家自然科學基金面上項目：單顆獨立工作的微納尺度矽襯底GaN基發光器件研究

2、國家自然科學基金面上項目：矽襯底GaN基LED異質外延生長及器件製備中應力研究

3、廣州市產學研協同創新重大專項項目：AlGaN/GaN異質結構全固態pH感測器

4、廣東省對外科技合作項目, 4英寸矽襯底GaN外延材料生長及其套用研究

5、國家重點研發計畫項目：GaN基新型電力電子器件關鍵技術（參加）

6、國家重點研發計畫項目：大失配、強極化第三代半導體材料體系外延生長動力學和載流子調控規律（參加）

7、廣東省套用型科技研發專項資金項目：低成本高效的去背光源化可穿戴智慧型眼鏡（參加）

代表性論著

綜述論文： Baijun Zhang* and Yang Liu, “A review of GaN based optoelectronic devices on silicon substrate”, Chinese Science Bulletin, 59, Issue 12, pp 1251-1275 (2014)

書籍章節： Handbook of Solid-State Lighting and LEDs (Chapter 19, III-Nitride Semiconductor LEDs Grown on Silicon and Stress Control of GaN Epitaxial Layers), CRC press, Taylor & Francis Group, 2017

(36) Xiaobiao Han, Yuebo Liu, Yuan Ren, Jieying Xing, Tongtong Zhu, Zhisheng Wu, Yang Liu, Baijun Zhang*, Semipolar {112̅ 2} InGaN/GaN multiple quantum well optically pumped laser diodes selectively grown on Si (111) substrates，Materials Science in Semiconductor Processing, 91, 327–332, (2019)

(35) Jieying Xing, Dejia Huang, Yaqiong Dai, Yuebo Liu, Yuan Ren, Xiaobiao Han, Hang Yang, Yaqian Hou, Zhisheng Wu, Yang Liu, and Baijun Zhang*, Influence of an integrated quasi-reference electrode on the stability of all-solid-state AlGaN/GaN based pH sensors, J. Appl. Phys. 124, 034904 (2018)

(34) Xiaobiao Han, Hui Luo, Hang Yang, Jie Chen, Changming Zhong, Jiezhi Liang, Jieying Xing, Zhisheng Wu, Yang Liu* and Baijun Zhang*, Effects of surface migration on InGaN/GaN multiple quantum wells selectively grown on periodic stripe openings separated by large SiO₂ covered spacing on Si (111) substrates, Materials Science in Semiconductor Processing, 87, 181–186, (2018)

(33) Jieying Xing, Yinsong Chen, Yuebo Liu, Jiezhi Liang, Jie Chen, Yuan Ren, Xiaobiao Han, Changming Zhong, Hang Yang, Dejia Huang, Yaqian Hou, Zhisheng Wu, Yang Liu and Baijun Zhang*, Enhancement of Emission of InGaN/GaN Multiple-Quantum-Well Nanorods by Coupling to Au-Nanoparticle Plasmons, J. Appl. Phys. 123, 193101 (2018)

(32) Jie Chen, Xiaobiao Han, Puman Huang, Weijie Chen, Jiezhi Liang, Changming Zhong, Zhengzhou Pan, Zhisheng Wub, Yang Liu, Baijun Zhang*, Schottky performance variation on r-plane and c-plane of GaN micro, truncated-pyramid grown by selective area MOCVD, Materials Science in Semiconductor Processing 63, 248–252 (2017)

(31) Jie Chen, Pu-Man Huang, Xiao-Biao Han,Zheng-Zhou Pan, Chang-Ming Zhong, Jie-Zhi Liang,Zhi-Sheng Wu, Yang Liu* and Baijun Zhang*, Influence of adatom migration on wrinkling morphologies ofAlGaN/GaN micro-pyramids grown by selective MOVPE, Chinese Physics B26, 068101 (2017).

(30) Qiang Liao, Yibin Yang, Weijie Chen, Xiaobiao Han, Jie Chen, Wenjie Zang, Hui Luo, Jiali Lin, Yunling Qiu, Yinsong Chen, Jingting Wei, Zhisheng Wu, Iatneng Chan, Yang Liu, and Baijun Zhang, Fabrication and properties of thin-film InGaN/GaN multiple quantum well light-emitting diodes transferred from Si (111) substrate onto a thin epoxy resin carrier, Journal of Display Technology Vol. 12 (12), pp. 1602-1608 (2016).

(29) Jingting Wei, Baijun Zhang and Gang Wang, Current Spreading Effects in Vertical GaN-Based Light-Emitting Diode on Si(111) Substrate, Chinese Journal of Electronics, Vol.25, No.4, pp672-677 (2016)

(28) Weijie Chen, Jiali Lin, Yinsong Chen, Xiaobiao Han, Jie Chen, Qiang Liao, Yunling Qiu, Zhisheng Wu, Yang Liu, and Baijun Zhang, Dual-color InGaN/GaN Pyramidal Micro Light-emitting Diode Selectively Grown on SiO₂ Masked Si Substrate, Journal of Display Technology, Vol. 12(4), pp 412-416,(2016)

(27) Weijie Chen, Xiaobiao Han, Jiali Lin, Guoheng Hu, Minggang Liu, Yibin Yang, Jie Chen, Zhisheng Wu, Yang Liu, and Baijun Zhang, Migration characterizations of Ga and In adatoms on dielectric surface in selective MOVPE, Chinese Physics B, Vol. 24 (11), 118101 (2015)

(26) Yibin Yang, Minggang Liu, Weijie Chen, Xiaobiao Han, Jie Chen, Xiuqi Lin, Jiali Lin, Hui Luo, Qiang Liao, Wenjie Zang, Yinsong Chen, Yunling Qiu, Zhisheng Wu, Yang Liu, and Baijun Zhang, In-situ wafer bowing measurements of GaN grown on Si (111) substrate by reflectivity mapping in MOCVD system, Chinese Physics B. Vol. 24 (9), 096103 (2015)

(25) Weijie Chen, Jiali Lin, Guoheng Hu, Xiaobiao Han, Minggang Liu, Yibin Yang, Zhisheng Wu, Yang Liu, and Baijun Zhang, GaN nanowire fabricated by selective wet-etching of GaN micro truncated-pyramid, J. Crys. Growth 426, pp. 168-172 (2015)

(24) Yibin Yang, Yuan Ren, Yangxiang Chen, Minggang Liu, Weijie Chen, Xiaobiao Han, Xiuqi Lin, Qiang Liao, Wenjie Zang, Hui Luo, Jiali Lin, Zhisheng Wu, Yang Liu, and Baijun Zhang, Light output enhancement of GaN-based light-emitting diodes by maskless surface roughening, Microelectronic Engineering (MEE), 139, pp. 39-42 (2015)

(23) Minggang Liu, Yibin Yang, Peng Xiang, Weijie Chen, Xiaobiao Han, Xiuqi Lin, Jiali Lin, Hui Luo, Qiang Liao, Wenjie Zang, Zhisheng Wu, Yang Liu and Baijun Zhang*, Influences of Stress on the Properties of GaN/InGaN Multiple Quantum Wells LEDs Grown on Si (111) Substrate, Chinese Physics B. Vol. 24 (6), 068503 (2015)

(22) Weijie Chen, Guoheng Hu, Jianliang Jiang, Minggang Liu, Yibin Yang, Peng Xiang, Gangwei Hu, Yan Lin, Zhisheng Wu, Yang Liu and Baijun Zhang*, "Electrically Driven Single Pyramid InGaN/GaN Micro Light-emitting Diode Grown on Silicon Substrate," Journal of Display Technology, Vol. 11 (3), March, pp. 285-291 (2015)

(21) Weijie Chen, Guoheng Hu, Jiali Lin, Jianliang Jiang, Minggang Liu, Yibin Yang, Gangwei Hu, Yan Lin, Zhisheng Wu, Yang Liu and Baijun Zhang*, High-performance single pyramid micro light-emitting diode with leakage current confined layer, Applied Physics Express 8, 032102 (2015)

(20) Minggang Liu, Yunqian Wang, Yibin Yang, Xiuqi Lin, Peng Xiang, Weijie Chen, Xiaobiao Han, Wenjie Zang, Qiang Liao, Jiali Lin, Hui Luo, Zhisheng Wu, Yang Liu, Baijun Zhang*, Performance improvement of GaN-based light-emitting diodes transferred from Si (111) substrate onto electroplating Cu submount with embedded wide p-electrodes, Chinese Physics B. Vol. 24 (3), 038503 (2015)

(19) Yibin Yang, Gangwei Hu, Peng Xiang, Minggang Liu, Weijie Chen, Xiaobiao Han, Guoheng Hu, Yan Lin, Xiuqi Lin, Wenjie Zang, Zhisheng Wu, Yang Liu, and Baijun Zhang*, "Enhancement of GaN-based light-emitting diodes transferred from Si (111) substrate onto electroplating Cu submount with TiO₂/SiO₂-Al omnidirectional reflector," Journal of Display Technology. Vol. 10 ( 12), pp. 1064-1069 (2014)

(18) Yibin Yang, Yan Lin, Peng Xiang, Minggang Liu, Weijie Chen, Xiaobiao Han, Gangwei Hu, Guoheng Hu, Wenjie Zang, Xiuqi Lin, Zhisheng Wu, Yang Liu, and Baijun Zhang*, “Vertical-conducting InGaN/GaN multiple quantum wells LEDs with AlN/GaN distributed Bragg reflectors on Si(111) substrate”, Applied Physics Express 7, 042102 (2014).

(17) Peng Xiang, Yibin Yang, Minggang Liu, Weijie Chen, Xiaobiao Han, Yan Lin, Gangwei Hu, Guoheng Hu, Hui Luo, Jianliang Jiang, Jiali Lin, Zhisheng Wu, Yang Liu, Baijun Zhang*, “Influences of periodic Si delta-doping on the characteristics of n-GaN grown on Si (111) substrate”, J. Crys. Growth 387, 106–110 (2014).

(16) Yibin Yang, Peng Xiang, Minggang Liu, Weijie Chen, Zhiyuan He, Xiaobiao Han, Yiqiang Ni, Fan Yang, Yao Yao, Zhisheng Wu, Yang Liu, and Baijun Zhang*, “Effect of compositionally graded AlGaN buffer layer grown by different functions of trimethylaluminum flow rates on the properties of GaN on Si (111) substrates”, J. Crys. Growth 376, 23–27 (2013).

(15) Peng Xiang, Minggang Liu, Yibin Yang, Weijie Chen, Zhiyuan He, Ka Kuen Leung, Charles Surya, Xiaobiao Han, Zhisheng Wu, Yang Liu, and Baijun Zhang*, “Improving the Quality of GaN on Si(111) Substrate with a Medium-Temperature/High-Temperature Bilayer AlN Buffer”, Jpn. J. Appl. Phys. 52, 08JB18 (2013).

(14) Tufu Chen, Yunqian Wang, Peng Xiang, Ruihong Luo, Minggang Liu, Weimin Yang, Yuan Ren, Zhiyuan He, Yibin Yang, Weijie Chen, Xiaorong Zhang, Zhisheng Wu, Yang Liu, and Baijun Zhang*, “Crack-free InGaN multiple quantum wells light-emitting diodes structures transferred from Si (111) substrate onto electroplating copper submount with embedded electrodes”, Appl. Phys. Lett. Vol.100, 241112 (2012).

(13) Ruihong Luo, Wentao Rao, Tufu Chen, Peng Xiang, Minggang Liu, Weimin Yang, Yunqian Wang, Yibin Yang, Zhisheng Wu, Yang Liu, Hao Jiang, and Baijun Zhang*, “Vertical InGaN Multiple Quantum Wells Light-Emitting Diodes Structures Transferred from Si(111) Substrate onto Electroplating Copper Submount with Through-Holes”, Jpn. J. Appl. Phys.51, 012101 (2012).

(12) Ruihong Luo, Peng Xiang, Minggang Liu, Tufu Chen, Zhiyuan Zheng, Bingfeng Fan, Yu Zhao, Yulun Xian, Shanjin Huang, Zhiyuan Zheng, Zhisheng Wu, Hao Jiang, Gang Wang, Yang Liu, Baijun Zhang*, “Influence of V/III ratio of low temperature growth AlN interlayer on the growth of GaN on Si(111) substrate”, Jpn. J. Appl. Phys. 50, 105501 (2011).

(11) Ruihong Luo, Peng Xiang, Minggang Liu, Tufu Chen, Zhiyuan He, Bingfeng Fan, Yu Zhao1, Yulun Xian, Zhisheng Wu, Hao Jiang, Gang Wang, Yang Liu, and Baijun Zhang*, “High Quality GaN Grown on Si(111) Using Fast Coalescence Growth”, Jpn. J. Appl. Phys. 50, 121001 (2011).

(10) Jingting Wei, Baijun Zhang*, Gang Wang, Bingfeng Fan, Yang Liu, Wentao Rao, Zhicong Huang, Weimin Yang, Tufu Chen, and Takashi Egawa, “Vertical GaN-Based Light-Emitting Diodes Structure on Si(111) Substrate with Through-Holes”, Jpn. J. Appl. Phys. 49, 072104 (2010).

(9) T. Egawa, B. Zhang, H. Ishikawa, High performance of InGaN LEDs on (111) silicon substrates grown by MOCVD, IEEE ELECTRON DEVICE LETTERS, Vol. 26, pp.169 – 171 (2005).

(8) Baijun Zhang, Takashi Egawa, Hiroyasu Ishikawa, Yang Liu, and Takashi Jimbo, Thin-film InGaN multiple-quantum-well light-emitting diodes transferred from Si (111) substrate onto copper carrier by selective lift-off, Appl. Phys. Lett. 86, 071113 (2005).

(7) Baijun Zhang, Takashi Egawa, Hiroyasu Ishikawa, Yang Liu, and Takashi Jimbo, Thermal stability of InGaN multiple-quantum-well light-emitting diodes on an AlN/sapphire template, J. Appl. Phys. 95, 3170 (2004).

(6) Baijun Zhang, Takashi Egawa, Hiroyasu Ishikawa, Yang Liu and Takashi Jimbo, High-Bright InGaN Multiple-Quantum-Well Blue Light-Emitting Diodes on Si (111) Using AlN/GaN Multilayers with a Thin AlN/AlGaN Buffer Layer, Japanese Journal of Applied Physics 42, pp. L226-L228 (2003).

(5) Baijun Zhang, Takashi Egawa, Yang Liu, Hiroyasu Ishikawa, and Takashi Jimbo, InGaN multiple-quantum-well light-emitting diodes on an AlN/sapphire template by metalorganic chemical vapor deposition, phys. stat. sol. (c) 0, No. 7, 2244–2247 (2003).

(4) Hiroyasu Ishikawa, Baijun Zhang, Takashi Egawa and Takashi Jimbo, Valence-Band Discontinuity at the AlN/Si Interface, Japanese Journal of Applied Physics 42, pp. 6413-6414 (2003).

(3) T. Egawa, B. Zhang, N. Nishikawa, H. Ishikawa, T. Jimbo, and M. Umeno, InGaN multiple-quantum-well green light-emitting diodes on Si grown by metalorganic chemical vapor deposition, J. Appl. Phys. 91, 528 (2002).

(2) B. Zhang, T. Egawa, G. Y. Zhao, H. Ishikawa, M. Umeno, and T. Jimbo, Schottky diodes of Ni/Au on n-GaN grown on sapphire and SiC substrates, Appl. Phys. Lett. 79, 2567 (2001).

(1) B. Zhang, T. Egawa, H. Ishikawa, N. N Ishikawa, T. Jimbo, and M. Umeno, InGaN Multiple-Quantum-Well Light Emitting Diodes on Si (111) Substrates, phys. stat. sol. (a) 188, pp. 151–154 (2001).

張佰君(中山大學電子與信息工程學院教授)