左致遠(博士生導師)

左致遠(博士生導師)

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學習經歷:

左致遠-山東大學光學高等研究中心

2007.09 - 2012.07 山東大學晶體材料研究所 博士

2003.09 - 2007.07 山東大學物理學院 學士

工作經歷:

2018.09- :山東大學光學高等研究中心 副教授

2016.12-2017.12:南洋理工大學 CINTRA 訪問學者

2015.02-2018.08:山東大學光學高等研究中心 助理研究員

2013.01 - 2015.01 中山大學物理科學與工程技術學院 博士後

基本介紹

  • 中文名:左致遠
  • 國籍中國
  • 畢業院校山東大學
  • 學位/學歷:博士
  • 職業:教師
  • 專業方向:功能光電材料與器件
  • 學術代表作:High performance metal-graphene-metal photodetector employing epitaxial graphene on SiC (0001) surface, F Zhang, X Chen, Z Zuo, X Qin, X Xu, X Zhao, Journal of Materials Science: Materials in Electronics 29 (6), 5180-5185.
  • 職稱:山東大學光學高等研究中心 副教授
人物經歷,研究方向,主要著作,科研項目,所獲專利,

人物經歷

學習經歷:
2007.09 - 2012.07 山東大學晶體材料研究所 博士
2003.09 - 2007.07 山東大學物理學院 學士
工作經歷:
2016.12-2017.12:南洋理工大學 CINTRA 訪問學者
2015.02-2018.08:山東大學光學高等研究中心 助理研究員

研究方向

【研究領域和興趣】
主要從事功能光電材料與器件的教學和科研工作,包括
1. 寬禁帶半導體光探測器件與光源器件
2. 基於鈣鈦礦材料的光電器件研究
3. 拓撲材料的物理性質及器件研究

主要著作

1. High performance metal-graphene-metal photodetector employing epitaxial graphene on SiC (0001) surface, F Zhang, X Chen, Z Zuo, X Qin, X Xu, X Zhao, Journal of Materials Science: Materials in Electronics 29 (6), 5180-5185.
2. Anisotropic Ionic Transportation Performances of (100) and (112) Planes in MAPbI 3 Single Crystal, Z Zuo, J Ding, Y Li, Y Zhao, S Du, Materials Research Bulletin 99, 466-470.
3. Anisotropic optoelectronic performances on (112) and (100) lattice plane of perovskite MAPbI3 single crystal, J Ding, S Du, X Cheng, L Jing, Y Zhao, Z Zuo, H Cui, X Zhan, Materials Chemistry and Physics 204, 222-227.
4. Atomic force microscopy investigation of a step generation and bunching on the (100) facet of a CH3NH3PbI3 crystal, grown from γ‐Butyrolactone, J Ding, Y Zhao, Y Sun, S Du, H Cui, L Jing, X Cheng, Z Zuo, X Zhan, Crystal Research and Technology 52 (4), 1700021.
5. High Detectivity and Rapid Response in Perovskite CsPbBr3 Single-Crystal Photodetector, J Ding, S Du, Z Zuo, Y Zhao, H Cui, X Zhan, The Journal of Physical Chemistry C 121 (9), 4917-4923.
6. Enhanced Optoelectronic Performance on the (110) Lattice Plane of an MAPbBr3 Single Crystal, Z Zuo, J Ding, Y Zhao, S Du, Y Li, X Zhan, H Cui, The journal of physical chemistry letters 8 (3), 684-689.
7. High-quality inorganic–organic perovskite CH3NH3PbI3 single crystals for photo-detector applications, J Ding, S Du, Y Zhao, X Zhang, Z Zuo, H Cui, X Zhan, Y Gu, H Sun, Journal of Materials Science 52 (1), 276-284.
8. Wafer-bonding AlGaInP light emitting diodes with pyramidally patterned metal reflector, Z Zhiyuan, X Wei, W Gang, X Xiangang, Journal of Semiconductors 36 (2), 024011.
9. Enhanced photoluminescence of gallium phosphide by surface plasmon resonances of metallic nanoparticles, G Lin, Q Zhang, X Lin, D Zhao, R Jia, N Gao, Z Zuo, X Xu, D Liu, RSC Advances 5 (60), 48275-48280.
10. Plasmonic GaInP solar cells with improved energy conversion efficiency, Q Zhang, D Liu, G Lin, Z Zuo, X Lin, D Zhao, R Jia, N Gao, X Xu, RSC Advances 5 (8), 6106-6110.
11. Effects of Indium-Tin Oxide Film Morphologies on Light-Output Characteristics of GaN-Based Light-Emitting Diodes, Y Shen, X Xu, Q Liu, Z Zuo, H Liu, M Zhang, X Hu, Journal of Nanoelectronics and Optoelectronics 9 (4), 549-553.
12. Surface plasmon enhanced photochemical etching of p-type GaP: a direct demonstration of wavelength selectivity, G Lin, Z Zuo, D Liu, Q Zhang, X Lin, X Xu, Physical Chemistry Chemical Physics 16 (37), 20216-20220.
13. Periodic indentation patterns fabricated on AlGaInP light emitting diodes and their effects on light extraction, X Lin, D Liu, G Lin, Q Zhang, N Gao, D Zhao, R Jia, Z Zuo, X Xu, RSC Advances 4 (108), 63143-63146.
14. Maskless Surface Patterning of AlGaInP Light-Emitting Diodes by Photochemical Laser Interference Etching, G Lin, Z Zuo, D Liu, Z Feng, Q Zhang, X Lin, X Xu, The Journal of Physical Chemistry C 117 (51), 27062-27066.
15. Resonant actuation of microcantilever by pulse wave of one-nth the resonant frequency, Z Feng, D Liu, Z Zuo, Q Yu, R Wang, X Xu, Applied Physics Letters 101 (6), 061901.
16. Metal-assisted electroless fabrication of nanoporous p-GaN for increasing the light extraction efficiency of light emitting diodes, R Wang, D Liu, Z Zuo, Q Yu, Z Feng, X Xu, AIP Advances 2 (1), 012109.
17. Surfactantless photochemical growth of Ag nanostructures on GaN epitaxial films with controlled morphologies and their application for SERS, R Wang, D Liu, Z Zuo, Q Yu, Z Feng, H Liu, X Xu, Journal of Materials Chemistry 22 (6), 2410-2418.
18. Ultra bright AlGaInP light emitting diodes with pyramidally patterned GaP spreading layer, Z Zuo, R Wang, D Liu, Q Yu, Z Feng, X Xu, Applied Physics Letters 99 (12), 121104.
19. Increasing the extraction efficiency of blue light emitting diodes via laser patterned Ga‐polar p‐GaN surface, Z Zuo, D Liu, B Zhang, J He, H Liu, X Xu, physica status solidi (a) 208 (9), 2226-2230.
20. In-plane strain states of standard and flip-chip GaN epilayers, ZY Zuo, D Liu, RJ Wang, SB Qin, H Liu, XG Xu, The European Physical Journal-Applied Physics 54 (1).
21. Electrical and photoluminescent behaviors of La (OH) 3 nanobelts doped with Ce3+ and Er3+, Z Zuo, D Liu, J Liu, H Liu, S Qin, F Zheng, Materials Chemistry and Physics 123 (2-3), 502-506.
22. (111) Twinned BaTiO 3 microcrystallites, S Qin, D Liu, F Zheng, Z Zuo, H Liu, X Xu, CrystEngComm 12 (10), 3003-3007.
23. UV-Irradiation-Enhanced Ferromagnetism in BaTiO3, S Qin, D Liu, Z Zuo, Y Sang, X Zhang, F Zheng, H Liu, XG Xu, The Journal of Physical Chemistry Letters 1 (1), 238-241.
24. Controlled Synthesis of Hydrogen Titanate− Polyaniline Composite Nanowires and Their Resistance− Temperature Characteristics, L Gai, G Du, Z Zuo, Y Wang, D Liu, H Liu, The Journal of Physical Chemistry C 113 (18), 7610-7615.

科研項目

近年來承擔科研項目8項,主要包括國家重點研發計畫“戰略性先進電子材料”專項子課題任務,國家自然科學基金青年基金,山東省重點研發計畫等。

所獲專利

近年來已獲授權的國家發明專利:
1. 201410299982,一種p面帶有DBR反射層的反極性AlGaInP發光二極體結構。
2. 201210240470,一種光輔助LED濕法粗化設備。
3. 201410121328,一種電流擴展層帶有二維光學結構的反極性AlGaInP發光二極體。
4. 201210313306,一種貼片式雷射器封裝結構及其在光電電路中的封裝方法。
5. 201210042470,基於聚甲基丙烯酸甲酯的LED表面粗化方法。
6. 201210042400,一種降低有源區工作溫度的LED結構及其製備方法。
7. 201010544701,基於雷射器的SiC襯底LED大面積可控表面粗化刻蝕方法。
8. 201210313283,一種雷射器植物照明燈及其製備方法。
9. 201010178809,基於雷射器的LED大面積可控表面粗化及刻蝕方法。
10. 201110053215,一種金屬納米顆粒輔助實現發光二極體表面粗化的方法。

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