呂雪芹，女，博士，廈門大學薩本棟微米納米科學技術研究院副教授。
基本介紹
- 中文名：呂雪芹
- 畢業院校：中國科學院
- 學位/學歷：博士
- 職業：教師
- 專業方向：半導體光電材料的製備和性能表征等
- 任職院校：廈門大學薩本棟微米納米科學技術研究院
個人經歷,研究方向,學術成果,
個人經歷
2010年畢業於中國科學院半導體研究所，獲微電子學與固體電子學專業工學博士學位。同年加入廈門大學薩本棟微米納米科學技術研究院，現任職副教授。
研究方向
半導體光電材料的製備和性能表征、光柵外腔半導體雷射器的研製與性能表征和套用研究、GaN基共振腔發光二極體的研製和性能最佳化。
學術成果
科研項目
國家自然科學基金面上項目：“氮化鎵基共振腔發光管研究”
國家自然科學基金青年項目：“GaN基外腔可調諧半導體雷射器研究”
福建省自然科學基金青年項目：“InGaN量子阱載流子輸運及複合機理研究”
主要文章
1. M. M. Liang, G. E. Weng, J. Y. Zhang, X. M. Cai, X. Q. Lv, L. Y. Ying and B. P. Zhang*, “Influence of barrier thickness on the structural and optical properties of InGaN/GaN multiple quantum well”, Chinese Physics (2014).
2. L. Sun, G. E. Weng, M. M. Liang, L. Y. Ying, X. Q. Lv, J. Y. Zhang, B. P. Zhang, “Influence of p-GaN annealing on the optical and electrical properties of InGaN/GaN MQW LEDs”, Physica E, (2014).
3. X. Q. Lv, P. Jin, H. M. Chen, Y. H. Wu, F. F. Wang, and Z. G. Wang, “Broadband light emission from chirped multiple InAs quantum dot structure”, Chinese Physics Letters, (2013).
4. X. Q. Lv, S. W. Chen, J. Y. Zhang, L. Y. Ying, and B. P. Zhang, “Tuning properties of external cavity violet semiconductor laser”, Chinese Physics Letters, (2013).
5. X. M. Cai, Y. Wang, Z. D. Li, X. Q. Lv, J. Y. Zhang, L. Y. Ying, and B. P. Zhang, “Improved photovoltaic performance of InGaN/GaN solar cells with optimized transparent current spreading layers”, Applied Physics A, (2013).
6. G. E. Weng, B. P. Zhang, M. M. Liang, X. Q. Lv, J. Y. Zhang, L. Y. Ying, Z. R. Qiu, H. Yaguchi, S. Kuboya, K. Onabe, S. Q. Chen, and H. Akiyama, “Optical properties and carrier dynamics in asymmetric coupled InGaN multiple quantum wells”, Functional Materials Letters (2013).
7. X. Q. Lv, J. Y. Zhang, L. Y. Ying, W. J. Liu, X. L. Hu, B. P. Zhang, Z. R. Qiu, S. Kuboya, and K. Onabe, “Well-width dependence of the emission-linewidth in ZnO/MgZnO quantum wells”, Nanoscale Research Letters, (2012).
8. X. K. Li, P. Jin, Q. An, Z. C. Wang, X. Q. Lv, H. Wei, J. Wu, J. Wu, and Z. G. Wang, “Experimental investigation of wavelength-selective optical feedback for a high-power quantum dot superluminescent device with two-section structure”, Optics Express, (2012).
9. X. K. Li, P. Jin, Q. An, Z. C. Wang, X. Q. Lv, H. Wei, J. Wu, J. Wu, and Z. G. Wang, “Improved continuous-wave performance of two-section quantum-dot superluminescent diodes by using epi-down mounting process”, IEEE Photonics Technology Letters,(2012).
10. X. L. Hu, W. J. Liu, G. E. Weng, J. Y. Zhang, X. Q. Lv, M. M. Liang, M. Chen, H. J. Huang, L. Y. Ying, and B. P. Zhang. “Fabrication and characterization of high-quality factor GaN-based resonant-cavity blue light-emitting diodes”, IEEE Photonics Technology Letters, (2012).
11. X. Q. Lv, J. Y. Zhang, W. J. Liu, X. L. Hu, M. Chen, and B. P. Zhang, “Optical properties of ZnO/MgZnO quantum wells with graded thickness”, Journal of Physics D: Applied Physics, (2011).
12. J. Wu, X. Q. Lv, P. Jin, X. Q. Meng, and Z. G. Wang, “Broadband tunable external cavity laser using a bent-waveguide quantum-dot superluminescent diode as gain device”, Chinese Physics B, (2011).
13. Z. C. Wang, P. Jin, X. Q. Lv, X. K. Li, and Z. G. Wang, “High-power quantum dot superluminescent diode with integrated optical amplifier section”, Electronics Letters, (2011).
14. X. K. Li, P. Jin, Q. An, Z. C. Wang, X. Q. Lv, H. Wei, J. Wu, J. Wu, and Z. G. Wang, “A high-performance quantum dot superluminescent diode with a two-section structure”, Nanoscale Research Letters (2011).
15. X. Q. Lv, P. Jin, and Z. G. Wang, “Broadly tunable grating-coupled external cavity laser with quantum-dot active region”, IEEE Photonics Technology Letters (2010).
16. X. Q. Lv, P. Jin, W. Y. Wang, and Z. G. Wang, “Broadband external cavity tunable quantum dot lasers with low injection current density”, Optics Express, (2010).
17. X. Q. Lv, P. Jin, and Z. G. Wang, “A broadband external cavity tunable InAs/GaAs quantum dot laser by utilizing only the ground state emission”, Chinese Physics B (2010).
18. Z. Y. Zhang, R. A. Hogg, X. Q. Lv, and Z. G. Wang, “Self-assembled quantum-dot superluminescent light-emitting diodes”, Advances in Optics and Photonics, (2010).
19. X. Q. Lv, N. Liu, P. Jin, and Z. G. Wang, “Broadband emitting superluminescent diodes with InAs quantum dots in AlGaAs matrix”, IEEE Photonics Technology Letters, (2008).
