吳翟

吳翟

吳翟，男，博士，教授，碩士生導師，河南省教育廳學術技術帶頭人，河南省中原青年拔尖人才，任職於鄭州大學物理學院。

2013年博士畢業於合肥工業大學材料工程學院材料物理與化學專業。2014年赴香港大學化學系任詠華院士課題組從事博士後研究。2015年5月到鄭州大學物理工程學院任教，2016年1月被鄭州大學直聘為教授，鄭州大學首批“青年拔尖人才”。近年來一直在從事低維納米半導體光電材料與器件的研究，發表SCI論文200餘篇，其中包含“ESI高被引論文”18篇，引用超9000餘次；H因子為53，申請發明專利18項。先後主持了國家自然科學基金-河南聯合基金、國家自然科學基金-青年項目、河南省自然科學基金優秀青年項目、中國博士後面上基金、河南省科技廳重點研發與推廣專項，河南省高等學校重點科研項目，鄭州大學物理學科推進計畫等科研項目。

基本介紹

  • 中文名：吳翟
  • 國籍：中國
  • 民族：漢
  • 畢業院校：合肥工業大學
  • 學位/學歷：博士
  • 職業：教師
  • 專業方向：凝聚態物理-低維納米半導體材料及光電器件
  • 任職院校：鄭州大學
人物經歷,研究方向,學術成果,科研項目,學術論文,發明專利,

人物經歷

（1）2014.12- 鄭州大學 物理工程學院直聘教授
（2）2014.2-2015.5香港大學 化學系 博士後
（3）2013.6-2014.1合肥京東方光電科技有限責任公司 高級工程師

研究方向

主要從事低維半導體納米結構的製備、表征及套用研究，以及相應新型微納器件的設計、製備、性能的研究工作，探索納米材料在新一代電子、光電子、能源等重要領域的套用，包括：
（1） 新型低維納米光電探測器：基於二維納米結構半導體材料的高性能紫外和紅外光電探測器的研製。
（2）新型低維納米結構感測器：基於低維納米結構的高靈敏度的濕敏、氣敏感測器的設計與性能研究。

學術成果

主持國家自然科學基金青年項目，中國博士後科學基金項目，河南省科技廳重點研發與推廣專項和河南省高等學校重點科研項目等科研項目。在ACS Nano,Journal of the American Chemical Society, Angewandte Chemie International Edition, NPG Asia Materials，ACS Photonics, Nano Research等國際知名期刊上已發表SCI學術論文一百五十餘篇，申請發明專利14項，包含美國專利1項。

科研項目

(1)主持：國家自然科學基金-河南聯合基金(2021.01-2023.12)
(2)主持：國家自然科學基金(青年項目; 2017.01-2019.12)
(3)主持：河南省自然科學基金優秀青年項目(2020.01-2022.12)
(4)主持：中國博士後科學基金(面上項目；2015.09-2017.06)
(5)主持：河南省科技廳重點研發與推廣專項(2018.01-2020.12)
(6)主持：河南省高等學校重點科研項目(2017.01-2018.12)
(7)主持：鄭州大學青年教師啟動基金(2015.09-2018.8)
(8)主持：鄭州大學物理學科推進計畫(2018.09-2021.08)

學術論文

  1. D. Wu, J. Guo, C. Wang, X. Ren, Y. Chen, P. Lin, L. Zeng*, Z. Shi, X. J. Li*, C. X. Shan and J. Jie*, Ultrabroadband and High-Detectivity Photodetector Based on WS2/Ge Heterojunction through Defect Engineering and Interface Passivation. ACS Nano 2021, 15 (6), 10119-10129. (IF=15.881)
  2. D. Wu, Z. Zhao, W. Lu, L. Rogée, L. Zeng, P. Lin, Z. Shi, Y. Tian, X. Li, Y. H. Tsang, Highly sensitive solar-blind deep ultraviolet photodetector based on graphene/PtSe2/β-Ga2O3 2D/3D Schottky junction with ultrafast speed, Nano Research. 2021, 14, 1973-1979. (IF=8.897)
  3. D. Wu, C. Guo, Z. Wang, X. Ren, Y. Tian, Z. Shi, P. Lin, Y. Tian, Y. Chen and X. Li, A defect-induced broadband photodetector based on WS2/pyramid Si 2D/3D mixed-dimensional heterojunction with a light confinement effect. Nanoscale 2021, 13 (31), 13550-13557. (IF=7.79)
  4. D. Wu, Z. Mo, Y. Han, P. Lin, Z. Shi, X. Chen, Y. Tian, X. J. Li, H. Yuan, Y. H. Tsang, Fabrication of 2D PdSe2/3D CdTe Mixed-Dimensional van der Waals Heterojunction for Broadband Infrared Detection. ACS Appl. Mater. Interfaces 2021, 13 (35), 41791-41801. (IF=9.229)
  5. Di Wu, Cheng Jia, Fenghua Shi, Longhui Zeng,* Pei Lin, Lin Dong, Zhifeng Shi, Yongtao Tian, Xinjian Li, and Jiansheng Jie*, Mixed-dimensional PdSe2/SiNWA heterostructure based photovoltaic detectors for self-driven, broadband photodetection, infrared imaging and humidity sensing, J. Mater. Chem. A, 2020, 8, 3632-3642. (IF=12.7)
  6. Z. Wang, X. Zhang, D. Wu*, J. Guo, Z. Zhao, Z. Shi, Y. Tian, X. Huang* and X. Li, Construction of mixed-dimensional WS2/Si heterojunctions for high-performance infrared photodetection and imaging applications, J. Mater. Chem.C, 2020, 8(20): 6877-6882.(IF=7.393)
  7. C. Jia, X. Huang, D. Wu*, Y. Tian, J. Guo, Z. Zhao, Z. Shi, Y. Tian, J. Jie and X. Li, An ultrasensitive self-driven broadband photodetector based on a 2D-WS2/GaAs type-II Zener heterojunction, Nanoscale, 2020, 12 (7): 4435-4444. (IF=7.79)
  8. D. Wu, J. Guo, J. Du, C. Xia, L. Zeng, Y. Tian, Z. Shi, Y. Tian, X. J. Li, Y. H. Tsang and J. Jie, Highly Polarization-Sensitive, Broadband, Self-Powered Photodetector Based on Graphene/PdSe2/Germanium Heterojunction, ACS Nano, 2019. (IF=15.881)
  9. C. Jia, D. Wu*, E. Wu, J. Guo, Z. Zhao, Z. Shi, T. Xu, X. Huang, Y. Tian and X. Li, A self-powered high-performance photodetector based on a MoS2/ GaAs heterojunction with high polarization sensitivity, J. Mater. Chem. C, 2019, 7: 3817-3821. (IF=7.393)
  10. R. Zhuo, L. Zeng, H. Yuan, D. Wu*, Y. Wang, Z. Shi, T. Xu, Y. Tian, X. Li and Y. H. Tsang, In-situ fabrication of PtSe2/GaN heterojunction for self-powered deep ultraviolet photodetector with ultrahigh current on/off ratio and detectivity, Nano Research, 2019, 12, 183-189. (IF=8.897)
  11. Wu, E.; Wu, D.*; Jia, C.; Wang, Y.; Yuan, H.; Zeng, L.; Xu, T.; Shi, Z.; Tian, Y.; Li, X. In Situ Fabrication of 2D WS2/Si Type-II Heterojunction for Self-Powered Broadband Photodetector with Response up to Mid-Infrared. ACS Photonics, 2019, 2019, 6: 565-572. (IF=7.5293)
  12. Zeng, L.-H.; Wu, D.; Lin, S.-H.; Xie, C.; Yuan, H.-Y.; Lu, W.; Lau, S. P.; Chai, Y.; Luo, L.-B.; Li, Z.-J.; Tsang, Y. H. Controlled Synthesis of 2D Palladium Diselenide for Sensitive Photodetector Applications. Adv. Funct. Mater. 2019, 29, 1806878. (IF=18.808)
  13. D. Wu, Y. Wang, L. Zeng, C. Jia, E. Wu, T. Xu, Z. Shi, Y. Tian, X. Li and Y. H. Tsang, Design of 2D layered PtSe2 heterojunction for the high-performance room-temperature broadband infrared photodetector. ACS Photonics, 2018, 5, 3820-3827. (IF=7.529)
  14. Yuange Wang, Xiaowen Huang, Di Wu*, Ranran Zhuo, Enping Wu, Cheng Jia, Zhifeng Shi, Tingting Xu, Yongtao Tian and Xinjian Li, A room-temperature near-infrared photodetector based on a MoS2/CdTe p-n heterojunction with a broadband response up to 1700 nm, J. Mater. Chem. C, 2018, 6, 4861-4865. (IF=7.393)
  15. L. Z. Lei, Z. F. Shi, Y. Li, Z. Z. Ma, F. Zhang, T. T. Xu, Y. T. Tian, D. Wu*, X. J. Li and G. T. Du, High-efficiency and air-stable photodetectors based on lead-free double perovskite Cs2AgBiBr6 thin films, J. Mater. Chem. C, 2018, 6: 7982-7988. (IF=7.393)
  16. L. Zeng, S. Lin, Z. Lou, H. Yuan, H. Long, Y. Li, W. Lu, S. P. Lau, D. Wu* and Y. H. Tsang*, Ultrafast and Sensitive Photodetector Based on PtSe2/Silicon Nanowire Array Heterojunction with Multiband Spectral Response from 200 to 1550 nm, NPG Asia Materials, 2018, 10, 352-362. (IF=10.481)
  17. D. Wu, Z. Lou, Y. Wang, Z. Yao, T. Xu, Z. Shi, J. Xu, Y. Tian, X. Li* and Y. H. Tsang*, Photovoltaic high-performance broadband photodetector based on MoS2/Si nanowire array heterojunction, Solar Energy Materials and Solar Cells, 2018, 182: 272-280. (7.267)
  18. R. Zhuo, Y. Wang, D. Wu*, Z. Lou, Z. Shi, T. Xu, J. Xu, Y. Tian and X. Li*, High-performance self-powered deep ultraviolet photodetector based on MoS2/GaN p–n heterojunction, J. Mater. Chem. C, 2018, 6: 299-303. (IF=7.393)
  19. T. Xu, Y. Liu, Y. Pei, Y. Chen, Z. Jiang, Z. Shi, J. Xu, D. Wu*, Y. Tian and X. Li, The ultra-high NO2 response of ultra-thin WS2 nanosheets synthesized by hydrothermal and calcination processes, Sensors and Actuators B: Chemical, 2018, 259: 789-796. (IF=7.46)
  20. D. Wu, Z. Lou, Y. Wang, T. Xu*, Z. Shi, J. Xu, Y. Tian and X. Li*, Construction of MoS2/Si nanowire array heterojunction for ultrahigh-sensitivity gas sensor, Nanotechnology, 2017, 28: 435503.
  21. Z. Lou, L. Zeng, Y. Wang, D. Wu*, T. Xu, Z. Shi, Y. Tian, X. Li and Y. H. Tsang*, High-performance MoS2/Si heterojunction broadband photodetectors from deep ultraviolet to near infrared, Optics Letters, 2017, 42: 3335.
  22. Z. Lou, D. Wu*, K. Bu, T. Xu, Z. Shi, J. Xu, Y. Tian and X. Li, Dual-mode high-sensitivity humidity sensor based on MoS2/Si nanowires array heterojunction, Journal of Alloys and Compounds, 2017, 726: 632-637.
  23. D. Wu*, T. T. Xu, Z. F. Shi, Y. T. Tian, X. J. Li, Y. Q. Yu and Y. Jiang, Two-terminal nonvolatile resistive switching memory devices based on n-CdSe NR/p-Si heterojunctions, Journal of Alloys and Compounds, 2017, 695: 1653-1657.
  24. D. Wu*, Y. Chang, Z. Lou, T. Xu, J. Xu, Z. Shi, Y. Tian and X. Li, Controllable synthesis of ternary ZnSxSe1-x nanowires with tunable band-gaps for optoelectronic applications, Journal of Alloys and Compounds, 2017, 708: 623-627.
  25. Y. Chang, D. Wu*, T. Xu, Z. Shi, Y. Tian and X. Li, Fabrication of p-type ZnTe NW/In Schottky diodes for high-speed photodetectors, Journal of Materials Science-Materials in Electronics, 2017, 28: 1720-1725.
  26. D. Wu*, T. Xu, Z. Shi, Y. Tian and X. Li, Construction of ZnTe nanowires/Si p–n heterojunctions for electronic and optoelectronic applications, Journal of Alloys and Compounds, 2016, 661: 231-236.
  27. D. Wu*, Z. Shi, T. Xu, Y. Tian and X. Li, Gate-controllable photoresponse of nitrogen-doped p-type ZnSe nanoribbons top-gate FETs, Materials Letters, 2016, 164: 84-88.
  28. V.K. Au, D. Wu, V.W. Yam, Organic Memory Devices Based on a Bis-Cyclometalated Alkynylgold(III) Complex, J. Am. Chem. Soc. 137 (2015) 4654-4657.
  29. C.T. Poon, D. Wu, W.H. Lam, V.W. Yam, Solution-Processable Donor-Acceptor Compound Containing Boron(III) Centers for Small-Molecule-Based High-Performance Ternary Electronic Memory Devices, Angew. Chem. Int. Ed. 54 (2015) 10569-10573.
  30. D. Wu, Y. Jiang, X. Yao, Y. Chang, Y. Zhang, Y. Yu, Z. Zhu, Y. Zhang, X. Lan, H. Zhong, Construction of crossed heterojunctions from p-ZnTe and n-CdSe nanoribbons and their photoresponse properties, J. Mater. Chem. C 2 (2014) 6547-6553.
  31. D. Wu, Y. Jiang, Y. Yu, Y. Zhang, G. Li, Z. Zhu, C. Wu, L. Wang, L. Luo, J. Jie, Nonvolatile multibit Schottky memory based on single n-type Ga doped CdSe nanowires, Nanotechnology 23 (2012) 485203.
  32. D. Wu, Y. Jiang, Y.G. Zhang, J.W. Li, Y.Q. Yu, Y.P. Zhang, Z.F. Zhu, L. Wang, C.Y. Wu, L.B. Luo, J.S. Jie, Device structure-dependent field-effect and photoresponse performances of p-type ZnTe:Sb nanoribbons, J. Mater. Chem. 22 (2012) 6206-6212.
  33. D. Wu, Y. Jiang, Y.G. Zhang, Y.Q. Yu, Z.F. Zhu, X.Z. Lan, F.Z. Li, C.Y. Wu, L. Wang, L.B. Luo, Self-powered and fast-speed photodetectors based on CdS:Ga nanoribbon/Au Schottky diodes, J. Mater. Chem. 22 (2012) 23272-23276.
  34. D. Wu, Y. Jiang, S.Y. Li, F.Z. Li, J.W. Li, X.Z. Lan, Y.G. Zhang, C.Y. Wu, L.B. Luo, J.S. Jie, Construction of high-quality CdS:Ga nanoribbon/silicon heterojunctions and their nano-optoelectronic applications, Nanotechnology 22 (2011) 405201-405206.
  35. D. Wu, Y. Jiang, L. Wang, S.Y. Li, B. Wu, X.Z. Lan, Y.Q. Yu, C.Y. Wu, Z.B. Wang, J.S. Jie, High-performance CdS:P nanoribbon field-effect transistors constructed with high-kappa dielectric and top-gate geometry, Appl. Phys. Lett. 96 (2010) 123118-123120.

發明專利

[1]基於二維二硒化鉑納米薄膜與碲化鎘晶體的異質結型近紅外光電探測器及其製備方法，CN201811336880.4
[2] 基於二維二硒化鈀納米薄膜與鍺的自驅動異質結型紅外光電探測器及其製備方法，CN201811336879.1
[3] 基於二維二硫化鉬納米薄膜與碲化鎘晶體的II型異質結型近紅外光電探測器及其製備方法，CN201811336892.7
[4] 一種雙模濕度感測器及其製備方法，CN201710375959.7
[5] 一種異質結型光電探測器及其製備方法，CN201210081208.1
[6] 基於硒化鎘納米線肖特基結型多位元組非揮發性存儲器及其製備方法，CN201210077102.4
[7] Solution-processable donor-acceptor compounds containing boron (iii) moieties for the fabrication of optical reflectors and organic memory devices and their preparation thereof，US20160343943 A1（美國專利）
[8] 以Ni(Mg)O作為空穴提供層的鈣鈦礦綠光LED及製備方法 CN201610219503.7
[9] 以ZnO納米牆網路作為電子注入層的鈣鈦礦LED及製備方法 CN201610220011.X
[10] 一種陣列基板及其製備方法和顯示裝置 CN201310705330.6
[11] 基於環氧樹脂拉膜分散納米線的方法 CN201010143683.8
[12] 一種感溫發光變色螢光材料及其製備方法 CN201110202844.0
[13] 一種感溫發光變色螢光材料的用途 CN201110202901.5

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