半導體物理性能手冊第2卷（上）

基本介紹

• 書名：半導體物理性能手冊第2卷（上）
• 作者： 足立貞夫
• ISBN：978-7-5603-4516-1
• 頁數：254
• 定價：148.00元
• 出版時間：2014.04
• 開本：16

內容簡介

介紹了各族半導體、化合物半導體的物理性能，包括：結構特性、熱學性質、彈性性質、聲子與晶格振動性質、集體效應及相關性質、能帶結構：能帶隙、能帶結構：電子和空穴的有效質量、電子形變勢、電子親和能與肖特基勢壘高度、光學性質、彈光、電光和非線性光學性質、載流子輸運性質。

圖書目錄

Preface

Acknowledgments

Contents of Other Volumes

1 Cubic Boron Nitride (c-BN)

1.1 Structural Properties

1.1.1 Ionicity

1.1.2 Elemental Isotopic Abundance and Molecular Weight

1.1.3 Crystal Structure and Space Group

1.1.4 Lattice Constant and Its Related Parameters

1.1.5 Structural Phase Transition

1.1.6 Cleavage Plane

1.2 Thermal Properties

1.2.1 Melting Point and Its Related Parameters

1.2.2 Specific Heat

1.2.3 Debye Temperature

1.2.4 Thermal Expansion Coefficient

1.2.5 Thermal Conductivity and Diffusivity

1.3 Elastic Properties

1.3.1 Elastic Constant

1.3.2 Third-Order Elastic Constant

1.3.3 Young's Modulus, Poisson's Ratio, and Similar

1.3.4 Microhardness

1.3.5 Sound Velocity

1.4 Phonons and Lattice Vibronic Properties

1.4.1 Phonon Dispersion Relation

1.4.2 Phonon Frequency

1.4.3 Mode Gruneisen Parameter

1.4.4 Phonon Deformation Potential

1.5 Collective Effects and Related Properties

1.5.1 Piezoelectric Constant

1.5.2 Frohlich Coupling Constant

1.6 Energy-Band Structure: Energy-Band Gaps

1.6.1 Basic Properties

1.6.2 Eo-Gap Region

1.6.3 Higher-Lying Direct Gap

1.6.4 Lowest Indirect Gap

1.6.5 Conduction-Valley Energy Separation

1.6.6 Direct-Indirect-Gap Transition Pressure

1.7 Energy-Band Structure: Electron and Hole Effective Masses l

1.7.1 Electron Effective Mass: F Valley

1.7.2 Electron Effective Mass:SatelliteValley

1.7.3 Hole Effective Mass

1.8 'Electronic Deformation Potential

1.8.1 Intravalley Deformation Potential: I- Point

1.8.2 Intravalley Deformation Potential: High-Symmetry Points

1.8.3 Intervalley Deformation Potential

1.9 Electron Affinity and Schottky Barrier Height

1.9.1 Electron Affinity

1.9.2 Schottky Barrier Height

1.10 Optical Properties

1.10.1 Summary of Optical Dispersion Relations

1.10.2 The Reststrahlen Region

1.10.3 At or Near the Fundamental Absorption Edge

1.10.4 The Interband Transition Region

1.10.5 Free-Carrier Absorption and Related Phenomena

1.11 Elastooptic, Electrooptic, and Nonlinear Optical Properties

1.11.1 Elastooptic Effect

1.11.2 Linear Electrooptic Constant

1.11.3 Quadratic Electrooptic Constant

1.11.4 Franz-Keldysh Effect

1.11.5 Nonlinear Optical Constant

1.12 Carrier Transport Properties

1.12.1 Low-Field Mobility: Electrons

1.12.2 Low-Field Mobility: Holes

1.12.3 High-Field Transport: Electrons

1.12.4 High-Field Transport: Holes

1.12.5 Minority-Carrier Transport: Electrons in p-Type Materials

1.12.6 Minority-Carrier Transport: Holes in n-Type Materials

……

2 Hexagonal Boron Nitride (h-BN)

3 Boron Phosphide (BP)

4 Boron Arsenide (BAs)

5 Wurtzite Aluminum Nitride (w-AIN)

6 Cubic Aluminum Nitride (c-AIN)

8 Aluminum Arsenide (AIAs)

9 Aluminum Antimonide (AISb)