《Silicon Carbide Power Devices》是2006年1月5日World Scientific Pub Co Inc出版的圖書，作者是B. Jayant Baliga。
基本介紹
- 書名：Silicon Carbide Power Devices
- 作者：B. Jayant Baliga
- 出版社：World Scientific Pub Co Inc
- 出版時間：2006年1月5日
- ISBN：9789812566058
內容簡介
Power semiconductor devices are widely used for the control and management of electrical energy. The improving performance of power devices has enabled cost reductions and efficiency increases resulting in lower fossil fuel usage and less environmental pollution. This book provides the first cohesive treatment of the physics and design of silicon carbide power devices with an emphasis on unipolar structures. It uses the results of extensive numerical simulations to elucidate the operating principles of these important devices.
Contents: Material Properties and Technology; Breakdown Voltage; PiN Rectifiers; Schottky Rectifiers; Shielded Schottky Rectifiers; Metal-Semiconductor Field Effect Transistors; The Baliga-Pair Configuration; Planar Power MOSFETs; Shielded Planar MOSFETs; Trench-Gate Power MOSFETs; Shielded Trendch-Gate MOSFETs; Charge Coupled Structures; Integral Diodes; Lateral High Voltage FETs; Synopsis.
