錢鶴

錢鶴,男,博士,清華大學微電子與納電子系教授。

基本介紹

  • 中文名:錢鶴
  • 職業:教師
  • 畢業院校:西安交通大學
  • 學位/學歷:博士
  • 專業方向:阻變存儲器及其在類腦晶片上的套用
  • 性別:男
  • 職稱:教授
  • 任職院校:清華大學微電子與納電子系
個人經歷,研究方向,主講課程,學術成果,榮譽獎項,

個人經歷

1990年畢業於西安交大並獲博士學位,1990-2006年在中科院微電子所工作,2006-2009年在三星半導體(中國)研究所工作,2009年起入職清華大學,現為清華大學微電子與納電子系教授。

研究方向

阻變存儲器及其在類腦晶片上的套用。

主講課程

“微電子製造工藝技術”和“現代半導體器件導論”。

學術成果

[1] Chunyuan Zhou, Lei Zhang, Hongrui Wang, Li Zhang, Yan Wang, Zhiping Yu andHe Qian, A 1mW power-efficient high frequency CML 2:1 divider.Analog Integrated Circuits and Signal Processing, 2011
[2] Chunyuan Zhou, Lei Zhang, Li Zhang, Yan Wang, Zhiping Yu andHe Qian, Injection-Locking-Based Power and Speed Optimization of CML Dividers,IEEE Tran. Circuits and Systems-II: Express Briefs. 2011
[3] Yue Bai, Huaqiang Wu, Ye Zhang, Jinyu Zhang,He Qianand Zhiping Yu, “Low power W:AlOx/WOx bilayer resistive switching structure based on conductive filament formation and rupture mechanism,”Applied Physics Letters, 102,173503 (2013)
[4] Ye Zhang, Huaqiang Wu, Yue Bai, Jinyu Zhang, Zhiping Yu andHe Qian, “Study of conduction and switching mechanisms in Al/AlOx/WOx/W resistive switching memory for multilevel applications,”Applied Physics Letters, 102, 233502 (2013)
[5] Hongming Lv, Huaqiang Wu, Jinbiao Liu, Jiahan Yu, Jiebin Niu, Junfeng Li, Qiuxia Xu, Xiaoming Wu andHe Qian, “High Carrier Mobility in Suspended-Channel Graphene Field Effect Transistors”,Applied Physics Letters, 103, 2013
[6] Huaqiang Wu, Changyang Linghu, Hongming Lv andHe Qian, “Graphene Applications in electronic and optoelectronic devices and circuits”,Chinese Physics B, 22, 2013
[7] Ke Xiao, Huaqiang Wu, Hongming Lv, Xiaoming Wu andHe Qian, “The study of the effects of cooling conditions on high quality graphene growth by the APCVD method,”Nanoscale, 5, 5524 (2013)
[8] Hongming Lv, Huaqiang Wu, Ke Xiao andHe Qian, “Graphene mobility enhancement by organosilane interface engineering,”Applied Physics Letters, 102, 183107 (2013)
[9] Huaqiang Wu, Xinyi Li, Minghao Wu, Feiyang Huang, Zhiping Yu,He Qian, “Resistive Switching Performance Improvement of Ta2O5-x/TaOyBilayer ReRAM Devices by Inserting AlOδBarrier Layer”, IEEE Electron Device Letters, 35, 2014,
[10] Ye Zhang, Ning Deng, Huaqiang Wu, Zhiping Yu, Jinyu Zhang,He Qian, “Metallic to hopping conduction transition in Ta2O5-x/TaOyresistive switching device,”Applied Physics Letters, 105, 063508, (2014)
[11] Yue Bai, Huaqiang Wu, Riga Wu, Ye Zhang, Ning Deng, Zhiping Yu,He Qian, “Study of Multi-level Characteristics for 3D Vertical Resistive Switching Memory,”Scientific Reports, 4, 5780, (2014)
[12] Ye Zhang, Huaqiang Wu, Minghao Wu, Ning Deng, Zhiping Yu, Jinyu Zhang,andHe Qian, “Random telegraph noise analysis in AlOx/WOy resistive switching memories,”Applied Physics Letters104, 103507, (2014)
[13] Huaqiang Wu, Xinyi Li, Minghao Wu, Feiyang Huang, Zhiping Yu,He Qian, “Resistive Switching Performance Improvement of Ta2O5-x/TaOyBilayer ReRAM Devices by Inserting AlOδBarrier Layer”,IEEE Electron Device Letters, 35, 39, (2014)
[14] Hongming Lv, Huaqiang Wu, Jinbiao Liu, Jiahan Yu, Can Huang, Junfeng Li, Jiahan Yu, Jiebin Niu, Qiuxia Xu, Zhiping Yu andHe Qian, “Inverted Process for Graphene Integrated Circuits Fabrication,”Nanoscale, 6, 5826, (2014)
[15] Hongming Lv, Huaqiang Wu, Can Huang, Yuda Wang andHe Qian, “Graphene Nonvolatile Memory (GNVM) Prototype Based on Charge-Transfer Mechanism,”Applied Physics Express7, 045101, (2014)

榮譽獎項

在中科院微電子所期間曾從事Si CMOS工藝技術、Si CMOS/SOI抗輻射電路和GaN微波功率器件等方面的研發工作,獲得國家技術發明二等獎、政府特殊津貼等獎勵。在三星工作期間曾負責多項智慧型手機中的晶片套用解決方案開發。

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