金潮淵

金潮淵，男，博士，博士生導師，微納電子研究所副所長。

基本介紹

• 中文名：金潮淵
• 畢業院校：英國謝菲爾德大學
• 學位/學歷：博士
• 職業：教師
• 專業方向：超快光子學、半導體光電子、微納集成光學
• 職務：微納電子研究所副所長
• 就職院校：浙江大學

個人經歷

主要研究方向是基於半導體量子點材料的集成光子器件，包括高速雷射器、光調製器、微波光子器件、微腔量子器件等。在半導體光子器件領域積累了15年的科研經驗和3年的工業界光子集成晶片產品開發經驗。在國內外學術期刊上發表研究論文50餘篇。包括Nature Nanotechnology 、Applied Physics Letters、IEEE、Optics Letters、Physical Review等學術期刊。半導體中自發發射過程的超快控制入選美國光學學會2014年度30大光學進展，並登上專題封面。

曾於2008 年入選日本學術振興會博士後研究員（JSPS Postdoctoral Fellow）。2015年入選中國科學院半導體研究所“百人計畫”研究員。2015 年入選英國謝菲爾德大學校長研究員（Vice-Chancellor's Fellow）。2016入選中組部國家特聘青年專家。2017年入選浙江大學“百人計畫”。2017 年入選日本學術振興會橋樑學者（JSPS Bridge Fellow）。2018年獲得浙江省特聘專家稱號。現擔任浙江大學竺可楨學院專業導師和“新時代人才培養戰略夥伴中學”主講專家。

時間	學校	職位	主要研究方向
1996 - 2000	南京大學	物理學（微電子）本科	-
2000 - 2003	中國科學院半導體研究所	微電子學與固體電子學碩士	半導體光放大器
2004 - 2008	英國謝菲爾德大學	電子與電氣工程博士	量子點雷射器
2008 - 2010	日本神戶大學	日本學術振興會研究員	垂直腔光開關/光調製器
2010 - 2013	荷蘭埃因霍溫理工大學	博士後	微腔單光子源
2013 - 2015	荷蘭EFFECT Photonics公司	資深科學家	100/400G光子集成晶片
2015	中國科學院半導體研究所	研究員	微腔雷射器
2015 - 2017	英國謝菲爾德大學	校長研究員	超快光子學
2017 至今	浙江大學	百人計畫研究員	超快光子學

教學課程

《量子與統計基礎》

授課時間：2019-2020年春夏學期，每周二/周四上午8:00-9:35

授課地點：玉泉教7-202（新冠疫情期間採用浙大釘直播教學。）

教學目的：

• 最佳化課程內容，增加對微電子學與固體電子學後續課程的銜接和引導。
• 培養學生對量子力學基本原理和概念的理解和掌握。
• 加強學生使用數值工具解決量子力學問題的能力。
• 增強學生對量子信息技術的興趣，培養學生對領域前沿的了解。

課程簡介：

• 量子力學作為現代物理學的兩大核心理論之一，成功描述了微觀物理體系的演化規律，奠定了現代信息科學特別是微電子學和光電子學的物理理論基礎。量子概念的引入深刻地揭示了一系列與巨觀體系截然不同的物理機制，在近年來逐漸發展出了包含量子通信、量子計算、量子模擬等量子信息科學的全新研究領域和方向。
• 本課程針對新工科建設的需求，適當選用工程類量子力學教材，突出量子概念，淡化量子力學課程中的理論性要求較高的部分內容。適量採用Matlab編寫的數值工具代替部分繁瑣的公式推導。採用雙語教學，選用英文教材，並輔以中文翻譯版教材和講義。
• 教學上本課程共64個學時，16周課程，每周4個學時。量子力學約占52學時，統計基礎約占12學時。課程的內容主要分為微電子學科的量子力學基礎和量子信息科學基礎兩大部分的內容。保留了量子力學基礎課程中量子力學史話、薛丁格方程、能帶論基礎、含時微擾論、全同粒子與統計等經典內容，擴充了學習量子信息科學所必備算符表示與矩陣力學、量子糾纏與量子信息、量子信息前沿展望等內容。其中量子信息科學基礎為主要新增教學內容。
• 本課程的考核方法採用“平時成績+考試成績”的方式。採用百分評分制。其中平時成績占50%，主要由出勤狀況10%、課堂表現10%、課後習題完成情況15%、課後報告完成情況15%等部分組成（根據網路授課情況調整）。

學術成果

(1) C.Y. Jin, M. Hopkinson, O. Kojima, T. Kita, K. Akahane, and O. Wada “Quantum dot switches: towards nanoscale power-efficient all-optical signal processing,” Chapter inQuantum Dot Devices, Eds. Zhiming M. Wang, in series: Lecture Notes in Nanoscale Science and Technology, Springer, 2012.

(2) On the Cover ofMicrowave Photonics(Second Edition), Eds. Chi H. Lee, CRC Press, 2012.

學術論文

(1) H. Francis, S. Chen, K. J. Che, M. Hopkinson, and C. Y. Jin, “Generating optical frequency combs via nano-scale all-optical modulators,” in revision with IEEE Photon. Journal, 2019.

(2) S. Chen, H. Francis, C.-H. Ho, K.-J. Che, Y.-R. Wang, M. Hopkinson, S.-Y. Zhang, and C.-Y. Jin, “Control of Q factor in laterally-coupled vertical cavities,” accepted by IET Optoelectron., 2019.

(3) Y.-R. Wang, C.-Y. Jin, C.-H. Ho, S. Chen, H. Francis, and M. Hopkinson, “Thermodynamic processes on a semiconductor surface during multi-beam laser interference patterning,” IET Optoelectronics, vol. 13, pp. 7-11, 2018.

(4) H. Francis, S. Chen, C. H. Ho, K. J. Che, Y. Wang, M. Hopkinson, and C. Y. Jin, “Generation of optical frequency combs using a photonic crystal cavity,” IET Optoelectronics, vol. 13, pp. 23-26, 2018.

(5) K. Che, D. Tang, H. Xu, C. Ren, L. Chen, C. Y. Jin, and Z. Cai, “Thermal characteristics of Brillouin microsphere lasers,” IEEE J. Quant. Electron. vol. 53, pp. 1-8, 2018.

(6) H. Francis, S. Chen, K.J. Che, Y.R. Wang, C.H. Ho, M. Hopkinson, and C.Y. Jin, “Modulating photonic crystal structures to generate optical frequency combs,” IEEE International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale, pp. 55-59, 2018.

(7) S. Chen, H. Francis, C.-H. Ho, K.J. Che, Y.R. Wang, M. Hopkinson, S.Y. Zhang, C.Y. Jin, “Quality factor control in laterally-coupled vertical cavities,” IEEE International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale, pp. 60-64, 2018.

(8) M. Liao, S. Chen, S. Huo, S. Chen, J. Wu, M. Tang, K. Kennedy, W. Li, M. Martin, T. Baron, C.Y. Jin, I. Ross, A. Seeds, and H. Liu, “Monolithically Integrated Electrically Pumped Continuous-Wave III-V Quantum Dot Light Sources on Silicon,” IEEE J. Sel. Top. Quant. Electron. vol. 23,

(9) Z. Ren, Q. Kan, G. Ran, C.Y. Jin, L. Yuan, X. Wang, L. Tao, H. Yu, L. Zhang, W. Chen, K. He, R.-M. Ma, J. Pan, and W. Wang, “Hybrid single-mode laser based on graphene Bragg gratings on silicon,” Opt. Lett. vol. 42, pp. 2134, 2017.

(10) Z. Ren, X. Wang, K. He, C.Y. Jin, and Q. Kan, “A parity-time symmetry single-mode laser based on graphene,” J. Mod. Opt. vol.2017.

(11) R. Johne, R. Schutjens, S. Fattahpoor, C.-Y. Jin, and A. Fiore, “Publisher's Note: Control of the electromagnetic environment of a quantum emitter by shaping the vacuum field in a coupled-cavity system,” Phys. Rev. A vol. 2016.

(12) A. Fiore, F. M. Pagliano, M.Y. Swinkels, C.Y. Jin, and R. Johne, “Vormgeven aan licht,” Nederlands Tijdschrift voor Natuurkunde vol.81, 2016.

(13) C.Y. Jin, R. Johne, M.Y. Swinkels, R. Schutjens, T.B. Hoang, L. Midolo, P.J. van Veldhoven, and A. Fiore, “Controlling spontaneous emission by real-time shaping the vacuum field in nano-photonic structures,” SPIE Newsroom, 2015.

(14) R. Johne, R. Schutjens, S. Fattahpoor, C.-Y. Jin, and A. Fiore, “Control of the electromagnetic environment of a quantum emitter by shaping the vacuum field in a coupled-cavity system,” Phys. Rev. A vol. 91, 2015.

(15) C.Y. Jin, R. Johne, M.Y. Swinkels, T.B. Hoang, L. Midolo, P.J. van Veldhoven, and A. Fiore, “Controlling spontaneous emission beyond the radiative lifetime,” Optics & Photonics News, vol. 25, 2014.

(16) C.Y. Jin, R. Johne, M.Y. Swinkels, T.B. Hoang, L. Midolo, P.J. van Veldhoven, and A. Fiore, “Ultrafast nonlocal control of spontaneous emission,” Nature Nanotechnology, vol. 9, 2014.

(17) C.Y. Jin, O. Wada, “Photonic switching devices based on semiconductor nanostructures,” J. Phys. D. Vol. 47,2014. (Invited Topical Review)

(18) J. Yuan, C.Y. Jin, M. Skacel, A. Urbańczyk, T. Xia, P.J. van Veldhoven, and R. Nötzel, “Coupling of InAs quantum dots to the plasmon resonance of In nanoparticles by metal-organic vapour phase epitaxy,” Appl. Phys. Lett. vol. 102, 2013. (as the correspondence author)

(19) C.Y. Jin, M.Y. Swinkels, R. Johne, T.B. Hoang, L. Midolo, P.J. van Veldhoven, and A. Fiore, “All-optical control of the spontaneous emission of quantum dots using coupled-cavity quantum electrodynamics,” Preprint at: http://arxiv.org/abs/1207.5311, 2012.

(20) J. Yuan, H. Wang, P.J. van Veldhoven, J. Wang, T. de Vries, B. Smalbrugge, C.Y. Jin, P. Nouwens, E.J. Geluk, A.Yu. Silov, R. Nötzel, “Controlling polarization anisotropy of site-controlled InAs/InP (100) quantum dots,” Appl. Phys. Lett. vol. 98,2011.

(21) C.Y. Jin, O. Kojima, T. Kita, O. Wada, and M. Hopkinson, “Observation of phase shifts in vertical cavity quantum dot switches,” Appl. Phys. Lett. vol. 98, 2011.

(22) C.Y. Jin, S. Ohta, M. Hopkinson, O. Kojima, T. Kita, O. Wada, “Temperature-dependent carrier tunnelling for self-assembled InAs/GaAs quantum dots with a GaAsN quantum well injector,” Appl. Phys. Lett. vol. 96, 2010.

(23) C.Y. Jin, O. Kojima, T. Inoue, T. Kita, O. Wada, M. Hopkinson, and K. Akahane, “Detailed design and characterization of all-optical switches based on InAs/GaAs quantum dots in a vertical cavity,” IEEE J. Quantum Electron. vol. 46, 2010.

(24) C.Y. Jin, O. Kojima, T. Inoue, S. Ohta, T. Kita, O. Wada, M. Hopkinson, and K. Akahane, “All-optical switch using InAs quantum dots in a vertical cavity,” Conference Proceeding of the 22nd International Conference on Indium Phosphide and Related Materials, pp.2010.

(25) C.Y. Jin, O. Kojima, T. Inoue, T. Kita, O. Wada, M. Hopkinson, and K. Akahane, “Self-assembled InAs quantum dots within a vertical cavity structure for all-optical switching devices,” Proceedings of SPIE, vol. 2010.

(26) C.Y. Jin, O. Kojima, T. Kita, O. Wada, M. Hopkinson, and K. Akahane, “Vertical-geometry all-optical switches based on InAs/GaAs quantum dots in a cavity,” Appl. Phys. Lett. vol. 95,2009.

(27) C.Y. Jin, H.Y. Liu, Q. Jiang, M. Hopkinson, and O. Wada, “Simple theoretical model for the temperature stability of InAs/GaAs self-assembled quantum dot lasers with different p-type modulation doping levels,” Appl. Phys. Lett. vol. 93, 2008.

(28) C.Y. Jin, H.Y. Liu, S.Y. Zhang, and M. Hopkinson, 'Low-threshold 1.3 μm GaInNAs quantum well lasers using quaternary barriers,' IEEE Photon. Technol. Lett. vol. 20,2008.

(29) H.Y. Liu, Y. Qiu, C.Y. Jin, T. Walther, and A.G. Cullis, “1.55 μm InAs quantum dots grown on a GaAs substrate using a GaAsSb metamorphic buffer layer,” Appl. Phys. Lett. vol. 92, 2008.

(30) Y. Qiu, T. Walther, H.Y. Liu, C.Y. Jin, M. Hopkinson, and A.G. Cullis, “Comparing InGaAs and GaAsSb metamorphic buffer layers on GaAs substrates for InAs quantum dots emitting at 1.55 μm,” Microscopy Semi. Mat. vol. 120, 2007.

(31) Z.Y. Zhang, I.J. Luxmoore, C.Y. Jin, H.Y. Liu, Q. Jiang, K.M. Groom, D.T. Childs, M. Hopkinson, A.G. Cullis, and R.A. Hogg, “Effect of facet angle on effective facet reflectivity and operating characteristics of quantum dot edge emitting lasers and superluminescent light-emitting diodes,” Appl. Phys. Lett. vol. 91, 2007.

(32) C.Y. Jin, H.Y. Liu, K.M. Groom, Q. Jiang, M. Hopkinson, T.J. Badcock, R.J. Royce, and D.J. Mowbray, “Effects of photon and thermal coupling mechanisms on the characteristics of self-assembled InAs/GaAs quantum dot lasers,” Phys. Rev. B vol. 76,2007.

(33) C.Y. Jin, H.Y. Liu, S.Y. Zhang, Q. Jiang, S.L. Liew, M. Hopkinson, T.J. Badcock, E. Nabavi, and D.J. Mowbray, “Optical transitions in type-II InAs/GaAs quantum dots covered by a GaAsSb strain-reducing layer,” Appl. Phys. Lett. vol. 91,2007.

(34) H.Y. Liu, T.J. Badcock, C.Y. Jin, E. Nabavi, K.M. Groom, M. Hopkinson, and D.J. Mowbray, “Reduced temperature sensitivity of the lasing wavelength in near-1.3-μm InAs/GaAs quantum-dot laser with a stepped composition strain-reducing layer,” Electron. Lett. vol. 43, 2007.

(35) C.Y. Jin, T.J. Badcock, H.Y. Liu, K.M. Groom, R.J. Royce, D.J. Mowbray, and M. Hopkinson, “Observation and modeling of a room-temperature negative characteristic temperature 1.3 μm p-type modulation doped quantum dot laser,” IEEE J. Quantum Electron. vol. 42, 2006.

(36) T.J. Badcock, H.Y. Liu, K.M. Groom, C.Y. Jin, M. Gutiérrez, M. Hopkinson, D.J. Mowbray, and M.S. Skolnick, “1.3 µm InAs/GaAs quantum-dot laser with low-threshold current density and negative characteristic temperature above room temperature,” Electron. Lett. vol. 42,2006.

(37) C.Y. Jin, H.Y. Liu, T.J. Badcock, K.M. Groom, M. Gutiérrez, R. Royce, M. Hopkinson, and D.J. Mowbray, “High-performance 1.3μm InAs/GaAs quantum-dot lasers with low threshold current and negative characteristic temperature,” IEE Proc. Optoelectronics vol. 153, 2006.

(38) M. Hopkinson, C.Y. Jin, H.Y. Liu, P. Navaretti, and R. Airey, “1.34 μm GaInNAs quantum well lasers with low room-temperature threshold current density”, Electron. Lett. vol. 42, 2006.

(39) H.Y. Liu, C.M. Tey, C.Y. Jin, S.L. Liew, P. Navaretti, M. Hopkinson, and A.G. Cullis, “Effects of growth temperature on the structural and optical properties of 1.6 µm GaInNAs/GaAs multiple quantum wells,” Appl. Phys. Lett. vol. 88, 2006.

(40) H.Y. Liu, S.L. Liew, T. Badcock, D.J. Mowbray, M.S. Skolnick, S.K. Ray, T.L. Choi, K.M. Groom, B. Stevens, F. Hasbullah, C.Y. Jin, M. Hopkinson, and R.A. Hogg, “p-doped 1.3 µm InAs/GaAs quantum-dot laser with a low threshold current density and high differential efficiency,” Appl. Phys. Lett. vol. 89,2006.

(41) H.Y. Liu, T.J. Badcock, K.M. Groom, M. Hopkinson, M. Gutierrez, D.T. Childs, C.Y. Jin, R.A. Hogg, I.R. Sellers, D.J. Mowbray, M.S. Skolnick, R. Beanland, and D.J. Robbins, “High-performance 1.3-μm InAs/GaAs quantum-dot lasers with low threshold current and negative characteristic temperature,” Proceedings of SPIE, vol. 6184, 2006.

(42) P. Navaretti, C.Y. Jin, H.Y. Liu, R. Airey, and M. Hopkinson, “Dilute nitride-based 1.3-μm high performance lasers,” Proceedings of SPIE, vol. 6184,2006.

(43) C.Y. Jin, Y.Z. Huang, L.J. Yu, and S.L. Deng, “Numerical and theoretical analysis of the crosstalk in linear optical amplifiers,” IEEE J. Quantum Electron. vol. 41, 2005.

(44) S.L. Deng, Y.Z. Huang, C.Y Jin, L.J Yu, “Theoretical analysis of gain and threshold current density for long wavelength GaAs-based quantum dots lasers,” J. Semiconductors (China) vol. 26, 2005.

(45) C. Liu, C.Y. Jin, Y.Z. Huang, N.H. Zhu, ”Numerical analysis of probe light energy in cross-gain modulation of SOA,” J. Semiconductors (China) vol. 26, 2005.

(46) C.Y. Jin, Y.Z. Huang, L.J. Yu, and S.L. Deng, “Detailed model and investigation of gain saturation and carrier spatial hole burning for semiconductor optical amplifier with gain clamping by a vertical laser field,” IEEE J. Quantum Electron. vol. 40, 2004.

(47) C.Y. Jin and Y.Z. Huang, “Wavelength conversion using gain-clamped semiconductor optical amplifier,” Semiconductor Optoelectronics (China) vol. 25, 2004.

(48) C.Y. Jin, W.H. Guo, Y.Z. Huang, and L.J. Yu, “Photon iterative numerical technique for steady-state simulation of gain-clamped semiconductor optical amplifiers,” IEE Proc. Optoelectronics vol. 150,2003.

(49) L.J. Yu, C.Y. Jin, X.L. Lu, and Y.Z. Huang, “Growth of 1.55 µm polarization-insensitive semiconductor optical amplifier,” Semiconductor Optoelectronics (China) vol. 24, 2003.

專著章節

(1) C.Y. Jin, M. Hopkinson, O. Kojima, T. Kita, K. Akahane, and O. Wada “Quantum dot switches: towards nanoscale power-efficient all-optical signal processing,” Chapter in Quantum Dot Devices, Eds. Zhiming M. Wang, in series: Lecture Notes in Nanoscale Science and Technology, Springer, 2012.

畢業論文

(1) C.Y. Jin, “GaAs-based long-wavelength semiconductor diode lasers for optical fibre communication,” Ph.D. thesis in Electronics and Electrical Engineering, Sheffield University, UK, 2008. (Supervised by Prof. M. Hopkinson and Prof. J. P. R. David)

(2) C.Y. Jin, “InGaAsP/InP quantum-well semiconductor optical amplifiers,” M.S. thesis in Microelectronics and Solid-State Electronics, Chinese Academy of Sciences, China, 2003. (Supervised by Prof. Y. Z. Huang)

新聞報導

(1) M. Maragkou, “Spontaneous emission: real-time control,” Nature Photonics, vol. 8,2014.

(2) M. Vianen, “Ultrafast remote switching of light emission,” Optik & Photonik, vol. 9, 2014.

(3) M. Marquit, “Vertical cavity quantum switch could lead us away from electronics-based computing,” Phys.org, 2011.

會議報告

(1) C.Y. Jin, “Controlling cavity field for ultrafast photonic devices.” Semiconductor and Integrated Optoelectronics Conference (SIOE), Cardiff, UK, 2016.

(2) C.Y. Jin, “Controlling cavity field for ultrafast photonic devices.” EMN Ultrafast Meeting, Las Vegas, USA, 2015.(Invited)

(3) A. Fiore, C.Y. Jin, R. Johne, R. Schutjens, M. Swinkels, T.B. Hoang, L. Midolo, P.J. van Veldhoven “Control of spontaneous emission by shaping the vacuum field in nanophotonic structures.” Photonics West 2015, San Francisco, USA, 2015. (Invited)

(4) C.Y. Jin, “Dynamic control of semiconductor cavity-QED beyond the radiative lifetime.” International Symposium on Recent Progress of Photonic Devices and Materials, Kobe, Japan, 2014. (Invited)

(5) C.Y. Jin, R. Johne, M.Y. Swinkels, T.B. Hoang, L. Midolo, P.J. van Veldhoven, and A. Fiore, “Ultrafast nonlocal control of spontaneous emission.” NanoCity, Utrecht, the Netherlands, 2014.

(6) C.Y. Jin, R. Johne, M.Y. Swinkels, T.B. Hoang, L. Midolo, P.J. van Veldhoven, and A. Fiore, “Ultrafast nonlocal control of spontaneous emission in photonic crystals.” Photonics West 2014, San Francisco, USA, 2014.

(7) O. Wada, and C.Y. Jin, “Ultrafast, energy-efficient photonic switches based on semiconductor nanostructures.” Asia Communications and Photonics Conference (ACP), Beijing, China, 2013. (Invited)

(8) C.Y. Jin, “Ultrafast control of spontaneous emission in photonic crystals.” Workshop on Micro- and Nano-Scale Quantum Optics, Eindhoven, the Netherlands, 2013. (Invited)

(9) C.Y. Jin, M.Y. Swinkels, R. Johne, T.B. Hoang, L. Midolo, P.J. van Veldhoven, and A. Fiore, “Remote control of spontaneous emission using coupled cavity quantum electrodynamics.” Photonics West 2013, San Francisco, USA, 2013.

(10) C.Y. Jin, M.Y. Swinkels, R. Johne, T.B. Hoang, L. Midolo, P.J. van Veldhoven, and A. Fiore, “Remote all-optical modulation of the spontaneous emission based on coupled cavity quantum electrodynamics.” Physics@FOM, Veldhoven, the Netherlands, 2013. (Invited)

(11) C.Y. Jin, M.Y. Swinkels, R. Johne, T.B. Hoang, L. Midolo, P.J. van Veldhoven, and A. Fiore, “All-optical control of spontaneous emission using coupled-cavity quantum electrodynamics,” The 31st International Conference on the Physics of Semiconductors (ICPS), Zurich, Switzerland, 2012.

(12) O. Wada, C.Y. Jin, O. Kojima, M. Hopkinson, R.F. Oulton, S. Gennaro, K. Akahane, T. Kita, and R.A. Hogg, “Ultrafast Photonic Mach-Zehnder Switch Using Quantum Dot Vertical Cavity Structures,” UK Semiconductors 2012, Sheffield, UK, 2012. (Invited)

(13) C.Y. Jin, M.Y. Swinkels, R. Johne, T.B. Hoang, L. Midolo, P.J. van Veldhoven, and A. Fiore, “Optical control of the quality factor using coupled photonic crystal cavities,” The 2012 conference on Lasers and Electro-Optics (CLEO), San Jose, USA, 2012.

(14) M.Y. Swinkels, C.Y. Jin, R. Johne, T.B. Hoang, L. Midolo, P.J. van Veldhoven, and A. Fiore, “Optical control of the quality factor of photonic crystal nanocavities for cavity quantum electrodynamics,” The 3rd International Conference on Metamaterials, Photonic Crystals and Plasmonics (META), Paris, France, 2012.

(15) M.Y. Swinkels, C.Y. Jin, R. Johne, L. Midolo, T.B. Hoang, P.J. van Veldhoven, and A. Fiore, “Optical control of the quality-factor of photonic crystal nanocavities,” Physics@FOM, Veldhoven, the Netherlands, 2012.

(16) C.Y. Jin, O. Kojima, T. Kita, O. Wada, and M. Hopkinson, “Optical phase switching using quantum dots in a vertical cavity,” The 29th Symposium on Spectroscopic Technologies and Surface Sciences, Taiwan, China, 2011. (Invited)

(17) C.Y. Jin, O. Kojima, T. Kita, O. Wada, and M. Hopkinson, “Optical phase shifter using quantum dots in a vertical cavity,” The 23rd International Conference on Indium Phosphide and Related Materials (IPRM) ,Berlin, Germany, 2011.

(18) C.Y. Jin, S. Ohta, M. Hopkinson, O. Kojima, T. Kita, and O. Wada, “A tunnel injection structure for speeding up carrier dynamics in InAs/GaAs quantum dots using a GaNAs quantum-well injector,” The 2010 international conference on Solid State Devices and Materials (SSDM), Tokyo, Japan, 2010.

(19) C.Y. Jin, O. Kojima, T. Inoue, T. Kita, O. Wada, M. Hopkinson, and K. Akahane, “All-optical switch using InAs quantum dots in a vertical cavity,” The 22nd International Conference on Indium Phosphide and Related Materials (IPRM), Takamatsu, Japan, 2010

(20) S. Ohta, C.Y. Jin, M. Hopkinson, O. Kojima, T. Kita, and O. Wada, “Observation of carrier tunneling from a GaAsN quantum well to InAs quantum dots,” The 57th spring meeting of the Japan Society of Applied Physics, Kanagawa, Japan, 2010.

(21) C.Y. Jin, O. Kojima, T. Inoue, S. Ohta, T. Kita, O. Wada, M. Hopkinson, and K. Akahane, “Two-step saturation behaviour in quantum-dot-based vertical-cavity all-optical switches,” The 57th spring meeting of the Japan Society of Applied Physics, Kanagawa, Japan, 2010.

(22) C.Y. Jin, O. Kojima, T. Inoue, T. Kita, O. Wada, M. Hopkinson, and K. Akahane, “Vertical-geometry all-optical switches based on InAs/GaAs quantum dots in a cavity,” Photonics West 2010, San Francisco, USA, 2010.

(23) C.Y. Jin, O. Kojima, T. Kita, O. Wada, M. Hopkinson, and K. Akahane, “Optical nonlinearity of InAs quantum dots in a cavity for all-optical switches,” The 2009 workshop on information, nano and photonics technology (WINPTech), Kobe, Japan, 2009.

(24) S. Ohta, C.Y. Jin, M. Hopkinson, O. Kojima, T. Kita, and O. Wada, “Temperature dependent carrier tunnelling in InAs/GaAs quantum dots by using a dilute nitride quantum well injector,” The 2009 workshop on information, nano and photonics technology (WINPTech), Kobe, Japan, 2009.

(25) C.Y. Jin, O. Kojima, T. Kita, O. Wada, M. Hopkinson, and K. Akahane, “Quantum dots in a vertical cavity for all-optical switching devices,” The 2009 international conference on Solid State Devices and Materials (SSDM), Sendai, Japan, 2009.

(26) C.Y. Jin, O. Kojima, T. Kita, O. Wada, M. Hopkinson, and K. Akahane, “Theoretical design of all-optical quantum-dot switches with an asymmetric cavity structure,” The 70th autumn meeting of the Japan Society of Applied Physics, Toyama, Japan, 2009.

(27) C.Y. Jin, O. Kojima, T. Kita, O. Wada, M. Hopkinson, and K. Akahane, “Vertical-cavity all-optical quantum dot switches utilizing the inter-subband relaxation of carriers,” The 70th autumn meeting of the Japan Society of Applied Physics, Toyama, Japan, 2009.

(28) C.Y. Jin, O. Kojima, T. Kita, O. Wada, M. Hopkinson, and K. Akahane, “All-optical switching using InAs/GaAs quantum dots within a vertical cavity structure,” The 14th international conference on modulated semiconductor structures (MSS), Kobe, Japan, 2009.

(29) C.Y. Jin, O. Wada, M. Hopkinson, O. Kojima, T. Kita, and K. Akahane, “All-optical switches based on InAs/GaAs quantum dots in a vertical cavity,” UK semiconductors 2009, Sheffield, UK, 2009.

(30) C.Y. Jin, O. Kojima, T. Kita, O. Wada, M. Hopkinson, and K. Akahane, “Investigation of an ultra-fast all-optical quantum dot switch with a vertical cavity structure,” The 56th spring meeting of the Japan Society of Applied Physics and Related Societies, Tsukuba, Japan, 2009.

(31) C.Y. Jin, O. Kojima, T. Kita, O. Wada, “Theoretical design of a vertical-cavity quantum-dot switch,” The 2008 workshop on information, nano and photonics technology (WINPTech), Kobe, Japan, 2008.

(32) C.Y. Jin, H.Y. Liu, T.J. Badcock, K.M. Groom, D.J. Mowbray, M. Hopkinson, O. Wada, “Novel, simple model for high temperature stability of InAs/GaAs self-assembled quantum dot lasers with optimum p-type modulation doping,” The 2008 international conference on Solid State Devices and Materials (SSDM), Tsukuba, Japan, 2008.

(33) H.Y. Liu, Y. Qiu, C.Y. Jin, T. Walther and A.G. Cullis, “1.55-μm InAs quantum dots grown on GaAsSb/GaAs metamorphic buffer layer,” The 2008 international conference on Molecular Beam Epitaxy (MBE2008), Vancouver, Canada, 2008.

(34) C.Y. Jin, H.Y. Liu, K.M. Groom, Q. Jiang, and M. Hopkinson, “Effects of photon and thermal coupling mechanism on self-assembled InAs/GaAs quantum dot lasers,” One-day quantum dot meeting, Imperial College, London, UK, 2008.

(35) C.Y. Jin, H.Y. Liu, S.Y. Zhang, Q. Jiang, S.L. Liew, and M. Hopkinson, “Optical transitions in type-II InAs/GaAs quantum dots covered by a GaAsSb strain-reducing layer,” UK Compound Semiconductors 2007, Sheffield, UK, 2007.

(36) C.Y. Jin, H.Y. Liu, K.M. Groom, M. Hopkinson, T.J. Badcock, R.J. Royce, and D.J. Mowbray “Photon coupling mechanism in 1.3-μm quantum-dot lasers,” The 2007 conference on Lasers and Electro-Optics (CLEO), Baltimore, MD, USA, 2007.

(37) C.Y. Jin, H.Y. Liu, S.Y. Zhang, R. Airey and M. Hopkinson “Very low-threshold-current-density 1.34-μm GaInNAs/GaAs quantum well lasers with a quaternary-barrier structure,” The 2007 conference on Lasers and Electro-Optics (CLEO), Baltimore, MD, USA, 2007.

(38) C.Y. Jin, H.Y. Liu, K.M. Groom, M. Hopkinson, T.J. Badcock, R.J. Royce, and D.J. Mowbray “Photon coupling model for the negative T0 in self-assembled quantum-dot lasers,” One day quantum dot meeting, University of Nottingham, Nottingham, UK, 2007.

(39) C.Y. Jin, P. Navaretti, H.Y. Liu, R. Airey, and M. Hopkinson, “High performance 1.34-μm GaInNAs quantum well lasers with quaternary barrier layers,” UK Compound Semiconductors 2006, Sheffield, UK, 2006.

(40) P.M. Smowton, I.C. Sandall, J.D. Thomson, T. Badcock, D.J. Mowbray, C.Y. Jin, H.Y. Liu, M. Hopkinson, “Auger Recombination is NOT necessary to explain the temperature dependence of threshold in p-doped quantum dot lasers,” The 20th international semiconductor laser conference (ISLC), Hawaii, USA, 2006. (Invited)

(41) H.Y. Liu, T.J. Badcock, K.M. Groom, M. Hopkinson, M. Gutierrez, D.T. Childs, C.Y. Jin, R.A. Hogg, I.R. Sellers, D.J. Mowbray, M.S. Skolnick, R. Beanland, D.J. Robbins, “High-performance 1.3-μm InAs/GaAs quantum-dot lasers with low threshold current and negative characteristic temperature,” Semiconductor Lasers and Laser Dynamics (SPIE), Bellingham, WA, USA, 2006. (Invited)

(42) P. Navaretti, C.Y. Jin, H.Y. Liu, R. Airey, M. Hopkinson, “Dilute nitride-based 1.3-μm high performance lasers,” Semiconductor Lasers and Laser Dynamics (SPIE), Bellingham, WA, USA, 2006. (Invited)

獎勵榮譽

（1）IEEE 3M-Nano國際會議最佳學生論文獎（Henry Francis），2018；

（2）日本學術振興會橋樑學者(JSPS Bridge Fellow)，2017；

（3）浙江大學“百人計畫”自然科學B類，2017；

（4）國家特聘青年專家，第六批，2016；

（5）英國謝菲爾德大學校長研究員(Vice-Chancellor's Fellow)，2015；

（6）中國科學院半導體研究所“百人計畫”，2015；

（7）美國光學學會30大光學進展，2014；

（8）日本學術振興會博士後研究員(JSPSPostdoctoral Fellow)，2008。