邱曉燕(西南大學物理科學與技術學院教授)

邱曉燕(西南大學物理科學與技術學院教授)

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邱曉燕，女，西南大學物理學院教授，博士生導師。大學本科畢業於西南大學物理學專業，碩士研究生畢業於西南大學凝聚態物理專業，博士研究生畢業於南京大學凝聚態物理專業。主要承擔《力學》和《理論力學》課程教學. 從事鈣鈦礦氧化物薄膜存儲器件研究, 發表SCI科研論文50餘篇, 授權國家發明專利2項. 先後主持國家和省部級科研項目9項, Adv. Funct. Mater. , Appl. phys. lett., J. Appl. phys., China. Phys. Lett.等學術期刊審稿人. 國家自然科學基金通訊評審專家,河北省和廣西省自然科學基金特邀通訊評審專家.

基本介紹

  • 中文名：邱曉燕
  • 國籍：中國
  • 民族：漢
  • 職業：教師
  • 畢業院校：南京大學
  • 學位/學歷：博士學位/博士研究生
  • 職務：西南大學物理科學與技術學院教授
  • 籍貫：重慶榮昌
  • 政治面貌：中共黨員
  • 職稱：博士，教授，博士生導師
研究工作經歷,

研究工作經歷

2017/07-2017/09 香港理工大學套用物理系 SeniorVisiting Scholar
2014/07-2014/09 香港理工大學套用物理系 ResearchFellow
2012/08-2013/08 美國德州大學聖安東尼奧分校 Visiting Scholar
2006/08-2007/01 香港理工大學套用物理系 ResearchAssistant
科研項目
1. 重慶自然科學面上項目(cstc2019jcyj-msxmX0451)- 適用於人工神經突觸的低壓穩定多態電阻開關研究, 10萬元, 2019.07-2022.072. 中央高校基本科研業務費重點項目(XDJK2018B034)- 套用於人工神經元的低壓高性能電阻開關單元的製備與性能研究, 20萬元, 2018.05-2020.12
3. 國家自然科學基金面上項目(11274257)-鑲嵌金屬納米微粒鉿基氧化物薄膜微結構調控的磁電性能,,84萬元,2013.01-2016.12
4. 國家自然科學青年基金項目(10904124)-HfAlOx介電薄膜d鐵磁性與介電性的集成可行性探究, 23萬元, 2010.01-2012.12
5. 重慶市自然科學基金項目(cstc2014jcyjA40029)-磁性氧化物單相薄膜的製備與阻變特性, 5萬元, 2014.07-2017.06
6. 中央高校基本科研業務費重點項目(XDJK2014B043)-基於γ-Fe2O3薄膜的磁/電阻變存儲器研究, 10萬元, 2014.05-2016.05
7. 中央高校基本科研業務費專項基金(XDJK2011C038)-非磁氧化物薄膜界面微結構調控的磁電效應, 4萬元, 2011.05-2014.05
8. 重慶市自然科學基金項目(CSTC2007BB4352)-高介電柵介質材料鉿鋁酸鹽薄膜的製備和界面性質研究, 2萬元, 2007.07-2009.07.
9. 西南大學博士基金項目(SWUB2007007)-高介電常數柵介質材料鉿鋁酸鹽薄膜的製備和界面性質研究, 3萬元, 2007.04-2009.04
代表論文
個人代表性科研論文：
  1. X. Y. Qiu*, R. X. Wang, Z. Zhang, M. L. Wei, H. Ji, Y. Chai, F. C. Zhou, J. Y. Dai,T. Zhang, L. T. Li, X. S. Meng, Ultra-low voltage resistive switching of HfO2 buffered (001) epitaxial NiO films deposited on metal seed layers, Appl. Phys. Lett., 2017, 111: 142103
    利用磁控濺射方法在金屬層上外延生長出氧化物薄膜並獲得優良的電阻開關特性
  2. X. Y. Qiu*, R.X. Wang, G. Q. Li, T. Zhang, L.T. Li, M.L. Wei, X.S. Meng, H. Ji, Z. Zhang, C.H. Chan, J.Y. Dai, Oxygen-dependent epitaxial growth of Pt (001) thin films on MgO(001) by magnetron sputtering, Appl. Surf. Sci., 2017, 406: 212–217
    利用磁控濺射方法在氧化物襯底上製備出高質量的外延金屬薄膜
  3. X. Y. Qiu, H. W. Liu, F. Fang, M. J. Ha, and J.-M. Liu* , Phase separation and interfacial reaction of high-k HfAlOX films prepared by pulsed-laser deposition in oxygen-deficient ambient, Appl. Phys. Lett. 2006, 88: 072906 (SCI引用次數31次)
    首次借用相分離概念描述了高溫退火過程中偽二元非晶薄膜均勻性的降解.
    　　
    研究組近年發表的代表性科研論文(按發表時間倒序排列)：
  4. X. Jiang, M. L. Wei, C-H Chan,Y. Y. Wang, J. B. Wang, R. L. Lai, J. Y. Dai, andX. Y. Qiu*. Effect of deposition temperature on ultralow voltage resistive switching behavior of Fe-doped SrTiO3 films. Appl. Phys. Lett. 2020,116: 102101
  5. Y. Y. Wang, L. T. Li, X. Jiang, J. B. Wang, R. L. Lai, and X. Y. Qiu*.Improved air-stability and low voltage resistive switching behaviors of NiO-buffered CH3NH3PbI3 films prepared by solution method. J. Phys. D: Appl. Phys. 2020, 53: 075101
  6. W. J. Zhai, Y. Z. Xing, Y. Zhang, Y.Y. Wang, L.T. Li, M. L. Wei, X. Jiang, andX. Y. Qiu*. Photovoltaic characteristics of organic-inorganic hybrid perovskite CH3NH3PbI3 solar cell with NiO hole transport layer (in Chinese).Sci Sin-Phys Mech Astron, 2019, 49: 017001
  7. T. Zhang, Z. Zhang, C-H Chan, L. T. Li, M. L. Wei, X. S. Meng, J. Y. Dai, and X. Y. Qiu*. Visible-light enhanced charge storage characteristics of amorphous Ni-doped HfO2 films, J. Phys. D: Appl. Phys. 2018, 51 : 305105
  8. X. Y. Qiu, X. S. Meng, H. Mao, Z. H. He, Y. Q. Lin , X. D. Liu, D. C. Li , J. Li*, Magnetic nanoparticles prepared by chemically induced transition: structure and magnetization behaviors, Mater. Chem. Phys. 2018, 204:328 -335
  9. X. Y. Qiu*, R. X. Wang, Z. Zhang, M. L. Wei, H. Ji, Y. Chai, F. C. Zhou, J. Y. Dai,T. Zhang, L. T. Li, X. S. Meng,Ultra-low voltage resistive switching of HfO2 buffered (001) epitaxial NiO films deposited on metal seed layers, Appl. Phys. Lett., 2017, 111: 142103
  10. X. Y. Qiu*, R.X. Wang, G. Q. Li, T. Zhang, L.T. Li, M.L. Wei, X.S. Meng, H. Ji, Z. Zhang, C.H. Chan, J.Y. Dai, Oxygen-dependent epitaxial growth of Pt (001) thin films on MgO(001) by magnetron sputtering, Appl. Surf. Sci., 2017, 406: 212–217
  11. R. X. Wang, T. Zhang, L.T. Li, M. L. Wei, X. S. Meng, X. Y. Qiu* Temperature-dependence of resistive switching behaviors and tunneling mechanism of polycrystalline NiOx films (in Chinese). Chin Sci Bull, 2017, 62: 1–9
  12. X. Y. Qiu*,S. Y. Zhang,T. Zhang, R. X. Wang, L. T. Li, Y. Zhang,J. Y. Dai,Charge storage characteristics and tunneling mechanism of amorphous Ge-doped HfOx films,Appl. Phys. A Mater. Sci. Process., 2016, 122:797
  13. H. X. Zhu, T. Zhang, R. X. Wang, Y. Y. Zhang, L. T. Li, and X. Y. Qiu*, Charge storage and tunneling mechanism of Ni nanocrystals embedded HfOx film, AIP Advances, 2016, 6: 055004
  14. H. X. Zhu, J. Q. Huo, X. Y. Qiu*, Y. Y. Zhang, R. X. Wang, Y. Chen,Chi- Man Wong, Hei-Man Yau, J. Y. Dai, thickness-dependent bipolar resistive switching behaviors of NiOx films, Materials Science Forum, 2016, 847: 131-136
  15. Y.Y Zhang, H X Zhu, H Ji, R.H. Wang, T. Zhang, L. L.Tao, X. Y. Qiu*, Microstructures of epitaxial Pt films on MgO and α-Al2O3 single-crystal substrates deposited by magnetron sputtering (in Chinese). Chin Sci Bull, 2016, 61: 1008 -1015
  16. X. Y. Qiu*,G. D. Zhou, J. Lia, Y. Chen, X.H. Wang, J.Y. Dai,Memory characteristics and tunneling mechanism of Ag nanocrystal embedded HfAlOx films on Si83Ge17/Si substrate, Thin Solid Films,2014(562): 674–679
  17. X. Y. Qiu*, J. Li , P. Chen , Y. Zhang , Y. T. Tu , X. H. Wang W. Lu, Post-annealing treatments and interface effects on anomalous magnetic characteristics of HfOx film, Integrated Ferroelectrics, 2013(141): 145-153
  18. Z. J. Liu, S. Y. Zhang, J. Q. Huo, J. Li, X. Y. Qiu*,Effect of HfOx buffer layer on the resistive switching characteristics of g-Fe2O3 nano-particle films (in Chinese). Sci Sin-Phys Mech Astron, 2014, 44: 417–424.
  19. G. D. Zhou, S. Y. Zhang, Y. T. Tu, J. Li, P. Chen, J. Y. Dai, and X. Y. Qiu*,Anisotropy of Weak Ferromagnetism of HfAlOx Film Deposited by Magnetron Sputtering, Integrated Ferroelectrics, 2012(134): 13-15
  20. X. Y. Qiu, K. C. Chan, P. F. Lee, X. W. Dong and J. Y. Da*, Interfacial microstructure and electrical properties of HfAlOx thin films on compressively strained Si83Ge17 grown by RF magnetron sputtering, Microelectronic Engineering,2009 (86): 2247-2250
  21. X. Y. Qiu，Q. M. Liu, F. Gao, L. Y. Lu, and J.-M. Liu*，Room-temperature weak ferromagnetism of amorphous HfAlOx thin films deposited by pulse laser deposition，Appl. Phys. Lett. 2006(89): 242504
  22. X. Y. Qiu, H. W. Liu, F. Fang, M. J. Ha, and J.-M. Liu* , Phase separation and interfacial reaction of high-k HfAlOX films prepared by pulsed-laser deposition in oxygen-deficient ambient, Appl. Phys. Lett. 2006(88): 072906
  23. X. Y. Qiu, H. W. Liu, F. Fang, M. J. Ha, Z. G. Liu and J.-M. Liu*, Interfacial properties of high-k dielectric CaZrOx films deposited by pulsed laser deposition, Appl. Phys. Lett., 2006 (88): 182907
  24. X. Y. Qiu, H. W. Liu and J.-M. Liu*, Thermal stability and interfacial properties of ZrAlxSiyOz films prepared by pulse-laser deposition, J. Appl. Phys. Lett., 2006 (100): 074109
  25. X. Y. Qiu, H. W. Liu, F. Fang, M. J. Ha, X. H. Zhou, and J. –M. Liu* , Thermal stability and dielectric properties of ultrathin CaZrOx films prepared by pulsed laser deposition, Appl. Phys. A Mater. Sci. Proc. 2005 (81): 1431-1434
獲獎情況
  1. 2019年,第四屆重慶市大學生物理創新競賽(二等獎)指導教師；
  2. 2018年,西南大學2016-2018學年度優秀教師；
  3. 2017年,西南大學物理學院第八屆教師教學技能比賽一等獎；
  4. 2016年,西南大學本科生優秀畢業論文(一等獎)指導教師；
  5. 2015年,第二屆重慶市大學生物理創新競賽(三等獎)指導教師；
  6. 2010年,重慶市自然科學三等獎(排名第四).

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