裴艷麗:人物經歷,授課課程,研究方向,科研項目,科研成果,書籍著作,主要學術論文,

裴艷麗，女，博士，中山大學電子與信息工程學院教授、博士生導師。

基本介紹

中文名：裴艷麗
畢業院校：日本廣島大學
學位/學歷：博士
職務：中山大學博士生導師
職稱：教授

人物經歷,授課課程,研究方向,科研項目,科研成果,書籍著作,主要學術論文,授權專利,

人物經歷

2017年1月-至今中山大學電子與信息工程學院教授博導

2016年1月-2016年12月中山大學電子與信息工程學院副教授碩士生導師

2011年5月-2015年12月中山大學理工學院副教授碩士生導師

2007年4月-2011年4月日本東北大學助理教授

2007年1月-2007年3月日本東北大學博士研究員

2003年10月-2006年12月日本廣島大學博士研究生

2000年9月-2003年7月浙江大學碩士研究生

1996年9月-2000年7月浙江大學本科

授課課程

大學物理、大學物理實驗、線性代數、積體電路製造技術、透明電子材料與器件、光學工程實驗方法與技術等

研究方向

1.基於氧化物半導體的電子器件研究（高性能薄膜電晶體、可印刷電子器件、感測器件等）

2. 用於人工智慧的類腦神經擬態器件研究

3.非揮發存儲器件研究（高密度非揮發存儲器件，柔性透明非揮發存儲器件等）

科研項目

1. 國家自然科學基金面上項目：高遷移率MOCVD微晶氧化銦薄膜電晶體及可靠性研究，主持，在研（63萬）

2. 廣東省科技計畫項目產學研合作項目：下一代新型氧化物透明導電薄膜觸摸面板關鍵技術開發及產業化，主持，在研（100萬）

3. 企業委託項目：採用MOCVD技術的移動終端用玻璃面板高硬鍍膜技術開發，主持，在研（150萬）

4. 廣東省科技廳科技計畫項目廣東省套用型科技研發專項：新型氧化物半導體透明電極結構AlGaInP基紅光LED晶片關鍵技術研發及其產業化，第二負責人，在研（500萬）

5. 廣州市科技計畫項目：高遷移率、高穩定性全透明氧化物薄膜電晶體（TOS-TFT）有源層關鍵問題研究，第二負責人，在研（150萬）

6. 國家自然科學基金青年基金，主持，已結題（30萬）.

科研成果

書籍著作

（1）Yanli Pei, “Wafer Level Reliability of Advanced CMOS Devices and Processes”, Chapter 7 : Reliability of High-k Gate Dielectrics, Nova Science Publisher, Inc. 2008.

（2）田中徹, 裴艷麗,“次世代半導體メモリーの最新技術”,第6章：その他のメモリー最新技術 (286-296), シーエムシー出版. 2009年2月.

主要學術論文

（1） Weijie Duan, Yong Tang, Xiaoci Liang, Chang Rao, Jinxing Chu, Gang Wang, and Yanli Pei*, “Solution Processed Flexible Resistive Switching Memory based on Al-In-O self-mixing Layer”, J. Appl. Physic. 124, pp. 104501, 2018.

（2）Guangshuo Cai, Lei Qiang, Peng Yang, Zimin Chen, Yi Zhuo, Ya Li, Yanli Pei*, and Gang Wang*, “High-sensitivity pH Sensor Based On Electrolyte-Gated In2O3 TFT”, IEEE Electron Device Letters, Vol. 39, pp. 1409-1412, 2018.

（3） Ya Li, Jinxing Chu, Weijie Duan, Guangshuo Cai, Xihua Fan, Xinzhong Wang, Gang Wang and Yanli Pei*, “Analog and Digital Bipolar Resistive Switching in Solution-Combustion-Processed NiO Memristor”, ACS Applied Materials & Interfaces, Vol. 10, pp. 24598-24606, 2018.

（4）Lei Qiang, Xiaoci Liang, Yanli Pei⁎, Ruohe Yao, Gang Wang⁎, “Extraction method of trap densities for indium zinc oxide thin-film transistors processed by solution method”, Thin Solid Films Vol. 649, pp. 51-56, 2018.

（5）Lei Qiang, Xiaoci Liang, Guangshuo Cai, Yanli Pei⁎, Ruohe Yao, Gang Wang⁎, “Modeling drain current of indium zinc oxide thin film transistors prepared by solution deposition technique”, Solid State Electronics Vol. 129, pp. 163-167, 2018.

（6） Xiaoci Liang, Chengcai Wang, Jun Liang, Chuan Liu, and Yanli Pei*, “Efficient Defect Engineering for Solution Combustion Processed In-Zn-O thin films for high performance transistors”, Semicond. Sci. Technol., Vol. 32, 095010, 2017.

（7）Ya Li, Chuan Liu, Gang Wang, and Yanli Pei*, “Investigation of solution combustion processed nickel oxide p-channel thin film transistors”, Semicond. Sci. Technol. 32, 085004(9pp), 2017 (July).

（8）Jiayong Lin,Yanli Pei*, Yi Zhuo, Xuejin Ma, and Gang Wang*, “AlGaInP-based LEDs with Al-doped ZnO Transparent Conductive Layer Grown by MOCVD”, IEEE Trans. Electron Dev., Vol.64, p99(1-4), 2017.

（9）Lei Qiang, Wuguang Liu,Yanli Pei*, Gang Wang*, and Ruohe Yao,“Trap states extraction of p-channel SnO thin-film transistors based on percolation and multiple trapping carrier conductions”, Solid-State Electronics，Vol. 129, pp. 163-167, 2017.

（10）Jiayong Lin, Yanli Pei*, Yi Zhuo, Zimin Chen, Ruiqin Hu, Guangshuo Cai, and Gang Wang*, “High-performance InGaN/GaN MQW LEDs with Al-doped ZnO transparent conductive layers grown by MOCVD using H2O as an oxidizer”, Chin. Phys. B, 25(11), 2016, pp. 118506 (4pp).

（11）Yanli Pei*， Wuguang Liu， Jingtao Shi, Zimin Chen*, and Gang Wang, “Fabrication and Characterization of p-Type SnO Thin Film with High c-Axis Preferred Orientation”, Journal of Electronic Materials 45, No.11, pp. 5967-5973, 2016.

（12）Yanli Pei, Ruihan Pei, Xiaoci Liang, Yuhao Wang, Ling Liu, Haibiao Chen, Jun Liang, “CdS-Nanowires Flexible Photo-detector with Ag-Nanowires Electrode Based on Non-transfer Process”, Scientific Reports 6, 21551, DOI:10.1038/srep21551, (2016).

（13）R. Hu, Y. Pei, Z. Chen, J. Yang, Y. Li, J. Lin, Y. Zhao, C. Wang, J. Liang, B. Fan， and G. Wang, “Ultra-High Field-Effect Mobility Thin-Film Transistors with Metal-Organic Chemical Vapor Deposition Grown In2O3 Channel Treated by Oxygen Microwave Plasma”, IEEE Electron Device Letters, Vol.36, 1163-1165, 2015.

（14）Xiaobo Chen, Yu Gu, Guohua Tao, Yanli Pei, Guangjin Wang, and Ni Cui, “Origin of ydrogen evolution activity on MS2 (M=Mo or Nb) monolayers”, J. Mater. Chem. A, Vol. 3, 18898-18905, 2015.

（15）Jingchuan Yang, Yanli Pei, Bingfeng Fan, Shanjin Huang, Zimin Chen, Cunsheng Tong, Hongtai Luo, Jun Liang, and Gang Wang, “GaN-Based LEDs With Al-Doped ZnO Transparent Conductive Layer Grown by MOCVD: Ultralow Forward Voltage and Highly Uniformity”, IEEE Electron Device Letters, Vol. 36, pp. 372-374, 2015.

（16）Ya Li, Yanli Pei, Ruiqin Hu, Zimin Chen, Yiqiang Ni, Jiayong Lin, Yiting Chen, Xiaoke Zhang, Zhen Shen, Jun Liang, Binfeng Fan, Gang Wang, and He Duan, “Charge Trapping Memory Characteristics of Amorphous-Indium-Gallium-Zinc Oxide Thin Film Transistors With Defects Engineered Alumina Dielectric”, IEEE Trans. Electron Dev. Vol. 62, No. 4, pp. 1184-1188, 2015.

（17）Yanli Pei, Biaoren Mai, Xiaoke Zhang, Ruiqin Hu, Ya Li, Zimin Chen, Bingfeng Fan, Jun Liang*, and Gang Wang, “Performance Improvement of Amorphous Indium-Gallium-Zinc Oxide ReRAM with SiO2 Inserting Layer”, Current Applied Physics, 2015, Vol. 15, 441-445.

（18）Yanli Pei, Biaoren Mai, Xiaoke Zhang, Ruiqin Hu, Ya Li, Zimin Chen, Bingfeng Fan, Jun Liang, and Gang Wang, “Forming Free Bipolar ReRAM of Ag/a-IGZO/Pt with Improved Resistive Switching Uniformity Through Controlling Oxygen Partial Pressure”, Journal of Electronic Materials, Vol. 44, No. 2 (2015), Page 645-650.

（19）Ruiqin Hu, Yanli Pei, Zimin Chen, Jingchuan Yang, Jiayong Lin, Ya Li, Bingfeng Fan, and Gang Wang , “Correlation between Grain Orientation and Carrier Concentration of Poly-crystalline In2O3 Thin Film Grown by MOCVD”, Journal of Materials Science: Volume 50, Issue 3 (2015), Page 1058-1064.

（20）Y. Li,Y. L. Pei, R. Q. Hu, Z. M. Chen, Y. Zhao, Z Shen, B. F. Fan, J. Liang, G. Wang, “Effect of channel thickness on electrical performance of amorphous IGZO thin-film transistor with atomic layer deposited alumina oxide dielectric”, Current Applied Physics 2014, 14, pp. 941-945.

（21）Jingchuan Yang, Yanli Pei, Ruiqing Hu, Bingfeng Fan, Cunsheng Tong, Toshiya Kojima, Zhisheng Wu, Hao Jiang, and Gang Wang，”Morphology controlled synthesis of crystalline ZnO film by MOCVD: from hexagon to rhombus”, CrystEngComm, 2012, 14, pp.8345–8348.

（22）Yanli Pei, Chengkuan Yin, Toshiya Kojima, Ji-Cheol Bea, Hisashi Kino, Takafumi Fukushima, Tetsu Tanaka, Mitsumasa Koyanagi, “MOSFET Nonvolatile Memory with High-Density Cobalt Nanodots Floating Gate and HfO2 High-k Blocking Dielectric”, IEEE Transactions on Nanotechnology 10, pp.528-531, 2011.

（23）Yanli Pei, Toshiya Kojima, Tatsuro Hiraki, Takafumi Fukushima, Tetsu Tanaka, and Mitsumasa Koyanagi, “Investigation of Effects of Post-Deposition Annealing on Cobalt Nanodots Embedded in Silica for Nonvolatile Memory Application”, Jpn. J. Appl. Phys. 49, pp. 066503-1-066503-4, 2010.

（24）Yanli Pei, Chengkuan Yin, Toshiya Kojima, Masahiko Nishijima, Takafumi Fukushima, Tetsu Tanaka, and Mitsumasa Koyanagi, “Memory Characteristics of Metal-Oxide-Semiconductor Capacitor with High Density Cobalt Nanodots Floating Gate and HfO2 Blocking Dielectric”, Appl. Phys. Lett. 95, pp. 033118, 2009.

（25）Y Pei, C Yin, J C Bea, H Kino, T Fukushima, T Tanaka, and M Koyanagi, “MOSFET Nonvolatile Memory with High Density Tungsten Nanodots Floating Gate Formed by Self-Assembled Nanodot Deposition”, Semicond. Sci. Technol. 24, pp. 045022, 2009.

（26）Yanli Pei, Chengkuan Yin, Masahiko Nishijima, Toshiya Kojima, Takafumi Fukushima, Tetsu Tanaka, and Mitsumasa Koyanagi, “Formation of high density tungsten nanodots embedded in silicon nitride for nonvolatile memory application”, Appl. Phys. Lett. 94, pp. 063108, 2009.

（27）Yanli Pei, Masahiko Nishijima, Takafumi Fukushima, Tetsu Tanaka, and Mitsumasa Koyanagi, “Memory characteristics of self-assembled tungsten nanodots dispersed in silicon nitride”, Appl. Phys. Lett. 93, pp. 113115-113117, 2008.

（28）Yanli Pei, Takafumi Fukushima, Tetsu Tanaka, and Mitsumasa Koyanagi, “Electrical Characterization of Metal-Oxide-Semiconductor Memory Devices with High-Density Self-Assembled Tungsten Nanodots”, Jpn. J. Appl. Phys. 47, pp. 2680-2683, 2008.

授權專利

（1）裴艷麗，范冰豐，王鋼，背電極結構的ZnO基全透明非揮發存儲器及製備方法，發明專利申請號：201110380922.6

（2）裴艷麗，吳錦璧，江灝, 一種ZnO-TCL半導體發光器件及其製造方法,發明專利申請號：201210170799.X

（3）裴艷麗，梁軍，裴宇波，一種碲化鎘薄膜電池及其製備方法，發明專利申請號：201210252117.X

（4）裴艷麗，梁軍，一種新型石墨烯材料及其器件的製備方法，發明專利號：201410059763.3

裴艷麗