基本介紹
- 中文名：翟亞紅
- 出生地：山西省運城市
- 出生日期：1980年
- 學位/學歷：博士
研究領域,學術成果,學生培養,
研究領域
1. 新型存儲器件的設計、建模、工藝製造，包括阻變存儲器RRAM，鐵電存儲器FeRAM等
2. 薄膜與功率器件的集成。
3. 新型微納器件及材料的研究，包括採用泛函分析方法研究高k柵介質材料，石墨烯等材料
4. 低功耗器件與大規模積體電路設計。
學術成果
代表性論
【1】 Y. H. Zhai, P. Li, G. J. Zhang, et al. Radiation-resistant bipolar n-p-n transistor [J]. Acta Physica Sinica, 2011, 60(8): 088501-1~088501-5
【2】 Y. H. Zhai, W. Li, P. Li, et al. Fabrication and characteristics of a lateral double-diffused metal/ferroelectric/silicon dioxide/silicon field effect transistor [J]. Chinese Physics B, 2013,22(7)
【3】 Y. H. Zhai, P. Li, W. Li, et al. Total-Dose hardened of a Bipolar NPN differential pair[C]. International Symposium on Photoelectronic Detection and Imaging, Beijing, 2011, 8196-81961B
【4】 Y. H. Zhai, W. Li, P. Li, et al. NV-DICE: A Ferroelectric Nonvolatile DICE Storage Element for Tolerance to Single Event Upsets[C]. International Conference on Intelligent Systems Design and Engineering Applications, SanYa, 2012, 1281-1284
【5】J. H. Li , P. Li, W. R. Huo, G. J. Zhang ,Y. H. Zhai, X. B. Chen. Analysis and fabrication of an LDMOS with high-permittivity dielectric [J]. Electron Device Letters, 2011, 32(9): 1266~1268
【6】D. L. Cai, P. Li, S. R. Zhang,Y. H. Zhai.et al. Fabrication and characteristics of a metal/ferroelectric/polycrystalline silicon/insulator/silicon field effect transistor [J]. Applied Physics Letters, 2007, 90: 153513
【7】D. L. Cai, P. Li,Y. H. Zhai, et al. Pb(Zr0.52Ti0.48)O3 memory capacitor on Si with a polycrystalline silicon/SiO2 stacked buffer layer. Journal of Semiconductors, 2011, Vol.32(9): 094007-1~094007-4.
【8】D. L. Cai, P. Li.Y. H. Zhai,et al. Fabrication and electrical characteristics of a metal-ferroelectric-polysilicon-insulator-Si field effect transistor [J]. Integrated Ferroelectrics, 2008, 98(1): 46-52
【9】A. W. Ruan, B. Hu,Y. H. Zhai.A Parasitic Effect - Free Test Scheme for Ferroelectric Random Access Memory (FRAM)[C]. IEEE Circuits and Systems International Conference on Testing and Diagnosis, 2009, 1 – 4
【10】Y. H. Zhai, P. Li, S. R. Zhang, et al. Investigation of Compatibil ity of Ferroelectric Capacitor Fabrication Process with Standard CMOS Fabrication Process [J]. Piezoelectrics & Acoustooptics, 2007, 29(5): 609-611
【11】Y. H. Zhai, W. Li, P. Li, et al. Research Progress of Radiation Hardened Ferroelectric Random Access Memory [J]. Materials Review, 2012, 26(12): 34-38
【12】D. L. Cai, P. Li,Y. H. Zhai, et al. Fabrication and electrical characteristics of a metal-ferroelectric-polysilicon-insulator-Si field effect transistor[C]. International Symposium on Integrated Ferroelectric, 2007, Bordeaux, 27-29
【13】J. H. Li , P. Li, G. J. Zhang ,Y. H. Zhai, et al. The Studies of a Bipolar PWM Push-Pull Converter for Anti-Radiation Application [J]. Acta Electronica Sinica, 2011, 39(11): 2492-249
【14】X. Fan, W. Li, P. Li, B. Zhang, X. D. Xie, G. Wang, B. Hu,Y. H. Zhai. Total ionizing dose effects on n-channel metal oxide semiconductor transistors with annular-gate and ring-gate layouts [J]. Acta Physica Sinica，2012, 61(1): 016106-1-016106-6
【15】X. Fan, P. Li, W. Li, B. Zhang, X. D. Xie, G. Wang, B. Hu,Y. H. Zhai,et al. Gate-enclosed NMOS transistors [J]. Journal of Semiconductors, 2011, 32(8): 084002-1~084002-6
【16】B. Hu, A. W. Ruan, P. Li,Y. H. Zhai,et al. Multilevel Silicate Interconnect in Monolithic Microsensors [J]. Journal of Shanghai Jiaotong University, 2007, 41 : 36-40
【17】Y. Zhang, C. T. Yang,Y. H. Zhai,et al. PZT Study on Deep Reactive Ion Etching of PZT Thin Film [J]. Piezoelectrics & Acoustooptics, 2011, 33(1): 133-135
【18】C. H. Bi, Y. X. Luo, B. Hu,Y. H. Zhai,et al. Research of the Ferroelectric Capacitor Performance Based on HSIM [J]. Piezoelectrics & Acoustooptics, 2012, 34(8): 614-617
【19】J. H. Feng,Y. H. Zhai, C. T. Yang,et al. Micromagnetic Simulation of the effects of the Stress on FeCoSiB Film[J]. Piezoelectrics & Acoustooptics, 2013, 35(1): 129-131
學生培養
所指導學生，現工作於MPS，華為，中電29所，24所等。
歡迎微電子、物理、材料，電子工程相關領域，數理基礎紮實，踏實努力，熱愛科學探索的同學加入課題組！
