翁國恩，男，華東師範大學通信與電子工程學院副教授。
基本介紹
- 中文名：翁國恩
- 職業：教師
- 專業方向：低維材料及器件製備
- 任職院校：華東師範大學
研究方向,學術成果,
研究方向
1. 氮化物垂直腔面發射雷射器(VCSEL)
2. 低維材料及器件製備、性能表征
學術成果
主持項目
[1]國家自然科學基金(青年項目), 項目號: 61704055, “氮化物增益開關超短脈衝垂直腔面發射雷射器研究”, 2018/01-2020/12。
論文
[27]Guoen Weng, Juanjuan Xue, Jiao Tian, Xiaobo Hu, Xumin Bao, Hechun Lin, Shaoqiang Chen, Ziqiang Zhu, and Junhao Chu, “Picosecond random lasing based on three-photon absorption in organometallic halide CH3NH3PbBr3perovskite thin films”,ACS Photonics (2018).
[26]Guo-En Weng, Shao-Qiang Chen, Bao-Ping Zhang, Xiao-Bo Hu, Shigeyuki Kuboya, and Kentaro Onabe,“Dynamics of carrier tunneling and recombination in asymmetric coupled InGaNmultiplequantum wells”,Optics Express (2017).
[25]Yang Mei,Guo-En Weng, Bao-Ping Zhang, Jian-Ping Liu, Werner Hofmann, Lei-Ying Ying, Jiang-Yong Zhang, Zeng-Cheng Li, Hui Yang, and Hao-Chung Kuo,“Quantum dot vertical-cavity surface-emitting lasers covering the‘green gap’”,Light: Science & Applications(2017).
[24]Guo-En Weng, Shao-Qiang Chen, Takashi Ito, Hidefumi Akiyama, Xiao-Bo Hu, and Bao-Ping Zhang,“Emission characteristics of high-gain GaN-based Vertical-Cavity Surface-Emitting Lasers”, 33rd International Conference on the Physics of Semiconductors,IOP Conf. Series: Journal of Physics:Conf. Series (2017).
[23]Guo-En Weng, Yang Mei, Jian-Ping Liu, Werner Hofmann, Lei-Ying Ying, Jiang-Yong Zhang, Yi-Kun Bu, Zeng-Cheng Li, Hui Yang, and Bao-Ping Zhang,“Low threshold continuous-wave lasing of yellow-green InGaN-QD vertical-cavity surface-emitting lasers”,Optics Express (2016).
[22]Guo-En Weng, Wan-Ru Zhao, Shao-Qiang Chen, Hidefumi Akiyama, Zeng-Cheng Li, Jian-Ping Liu and Bao-Ping Zhang, “Stronglocalizationeffect and carrier relaxationdynamics in self-assembled InGaN quantum dotsemitting in the green”,Nanoscale Research Letters(2015).
[21]Guo-En Weng, Bao-Ping Zhang, Ming-Ming Liang, Xue-Qin Lv, Jiang-Yong Zhang, Lei-Ying Ying, Zhi-Ren Qiu, H. Yaguchi, S. Kuboya, K. Onabe, Shao-Qiang Chen, and H. Akiyama, “Opticalpropertiesandcarrierdynamicsinasymmetric coupledInGaNmultiplequantumwells”,Functional Materials Letters(2013).
[20]Guo-En Weng,An-Kai Ling, Xue-Qin Lv, Jiang-Yong Zhang,andBao-Ping Zhang, “III-Nitride-basedquantumdots andtheiroptoelectronicapplications”,Nano-Micro Letters
[19] Xiao-Bo Hu, Liang-Qing Zhu,Guo-En Weng, and Shao-Qiang Chen,“Accessing externally induced spatially-resolved strain in GaAs thin-film solar cells by electroluminescence imaging”,Solar Energy Materials and Solar Cells(2017).
[18]Wan-Ru Zhao,Guo-En Weng, Jian-Yu Wang, Jiang-Yong Zhang, Hong-Wei Liang, Takashi Sekiguchi, and Bao-Ping Zhang,“Enhanced Light Emission due to Formation of Semi-polar InGaN/GaN Multi-quantum Wells”,Nanoscale Research Letters
[17]Wan-Ru Zhao,Guo-En Weng,Ming-Ming Liang,Zeng-Cheng Li,Jian-Ping Liu,Jiang-Yong Zhang,andBao-Ping Zhang, “Temperature Dependence of Emission Properties of Self-Assembled InGaNQuantum Dots”,Chinese Physics Letters
[16]Li Sun,Guo-En Weng, Ming-Ming Liang, Lei-Ying Ying, Xue-Qin Lv, Jiang-Yong Zhang,andBao-Ping Zhang, “Influence of p-GaN annealing on the optical and electrical properties of InGaN/GaN MQW LEDs”,Physica E
[15]Ming-Ming Liang,Guo-En Weng,Jiang-Yong Zhang, Xiao-MeiCai,Xue-Qin Lv,Lei-Ying Ying,andBao-Ping Zhang,“Influence of barrier thickness on the structural and optical propertiesof InGaN/GaN multiple quantum wells”,Chinese Physics B
[14] Xu-Min Bao, Yue-Jun Liu,Guo-En Weng, Xiao-Bo Hu, and Shao-Qiang Chen,“ABC-model analysis of gain-switched pulse characteristics in low-dimensional semiconductor lasers”,Quantum Electronics
[13] Yang Mei, Rong-Bin Xu,Guo-En Weng, Huan Xu, Lei-Ying Ying, Zhi-Wei Zheng, Hao Long, Bao-Ping Zhang, Werner Hofmann, Jian-Ping Liu, Jian Zhang (Jr.), Mo Li, and Jian Zhang (Sr.), "Tunable InGaN quantum dot microcavity light emitters with 129 nm tuning range from yellow-green to violet",Applied Physics Letters
[12]Xiao-Long Hu, Wen-Jie Liu,Guo-En Weng, Jiang-Yong Zhang, Xue-Qin Lv, Ming-Ming Liang,Ming Chen, Hui-Jun Huang, Lei-Ying Ying, and Bao-Ping Zhang,“Fabrication and Characterization of High-QualityFactorGaN-Based Resonant-Cavity BlueLight-Emitting Diodes”,IEEEPhotonicsTechnologyLetters
[11] Xiao-Bo Hu, Teng-Fei Chen, Juan-Juan Xue,Guo-En Weng, Shao-Qiang Chen, Hidefumi Akiyama, and Zi-Qiang Zhu,“Absolute electroluminescence imaging diagnosis of GaAs thin-film solar cells”,IEEE Photonics Journal(2017).
[10] Xiao-Bo Hu, Juan-Juan Xue, Jiao Tian,Guo-En Weng, and Shao-Qiang Chen,“Effect of Cu/Ga ratio on deep-level defects in CuGaSe2thin films studied by photocapacitance measurements with two-wavelength excitation”,Applied Optics
[9] Xiao-Bo Hu, Juan-Juan Xue, Jiao Tian,Guo-En Weng, and Shao-Qiang Chen,“Investigation of deep-level defects in CuGaSe2thin-film solar cells using photocapacitance methods”,Applied Optics
[8] Xiao-Bo Hu, Juan-Juan Xue, Jiao Tian,Guo-En Weng, and Shao-Qiang Chen,“Influence of Se beam pressure on deep-level defects in Cu(In,Ga)Se2thin films studied by photocapacitance and time-resolved photoluminescence measurements”,Applied Optics56(5),
[7]Wen-Jie Liu, Xiao-Long Hu, Jiang-Yong Zhang,Guo-En Weng, Xue-Qin Lv, Hui-Jun Huang,Ming Chen, Xiao-Mei Cai, Lei-Ying Ying,andBao-Ping Zhang,“Low-temperature bonding technique for fabrication ofhigh-power GaN-based blue vertical light-emitting diodes”,Optical Materials
[6] Shao-Qiang Chen, Sheng-Xi Diao, Peng-Tao Li, Takahiro Nakamura, Masahiro Yoshita,Guo-En Weng, Xiao-Bo Hu, Yan-Ling Shi, Yi-Qing Liu, and Hidefumi Akiyama,“Broadband tunable integrated CMOS pulser with 80-ps minimum pulse width for gain-switched semiconductor lasers”,Scientific Reports
[5] Shao-Qiang Chen, Takahiro Nakamura, Takashi Ito, Xu-Min Bao, Hidekazu Nakamae,Guo-En Weng, Xiao-Bo Hu, Masahiro Yoshita, Hidefumi Akiyama, Jian-Ping Liu, Masao Ikeda, and Hui Yang,“Picosecond tunable gain-switched blue pulses from GaN laser diodes with nanosecond current injections”,Optics Express
[4] Tian-Tian Wang, Hong-Mei Deng, Hui-Yi Cao, Wen-Liang Zhou,Guo-En Weng, Shao-Qiang Chen, Ping-Xiong Yang, and Jun-Hao Chu,“Structural, optical and magnetic modulation in Mn and Mg co-doped BiFeO3films grown on Si substrates”,Materials Letters
[3] Ben-Long Guo, Hong-Mei Deng, Xue-Zhen Zhai, Wen-Liang Zhou, Xian-Kuan Meng,Guo-En Weng, Shao-Qiang Chen, Ping-Xiong Yang, and Jun-Hao Chu,“Cr doping-induced structral phase transition, optical tuning and magnetic enhancement in BiFeO3thin films”,Materials Letters
[2] Shuo Lin, Bao-Ping Zhang, Shen-WeiZeng, Xiao-Mei Cai,Jiang-Yong Zhang,S.Wu, An-Kai Ling, andGuo-En Weng,“Preparation and properties of Ni/InGaN/GaN Schottky barrier photovoltaiccells”,Solid-State Electronics
[1]孫麗, 張江勇, 陳明, 梁明明,翁國恩, 張保平,"p-GaN退火對InGaN量子阱光學性能的影響",Semiconductor Technology
專利
[1]一種氮化鎵基諧振腔氣體感測器的製備方法, 張保平(導師),翁國恩, 梅洋, 張江勇, 應磊瑩,
授權,
[2]一種基於納米壓印技術製備圖形化藍寶石襯底的方法,陳少強,翁國恩,胡小波, 塗亮亮, 魏明德,
授權,
[3]一種基於聚合物微球製備納米級圖形化藍寶石襯底的方法,翁國恩,陳少強,胡小波, 塗亮亮, 魏明德,
授權,
[4]一種多波長GaN基垂直腔面發射雷射器的有源區結構設計,翁國恩, 陳少強, 胡小波, 梅洋,
[5]一種多波長GaN基非對稱量子阱面發射雷射器及其製備方法,翁國恩, 陳少強, 胡小波,
[6]一種納米級圖形化藍寶石襯底及其製備方法和套用,翁國恩,陳少強,胡小波, 塗亮亮, 魏明德,
