羅謙電子科技大學副教授。
教育背景
2000.09 – 2007.04，電子科技大學，微電子學與固體電子學，碩博連讀，博士
1994.09 – 1998.06，四川大學，微電子技術，本科
工作履歷
2013.06–至今, 電子科技大學，微電子與固體電子學院，副教授
2009.10 – 2010.10，香港科技大學，ECE系（Department of Electronic and Computer engineering），博士後
2007.05 – 2013.05，電子科技大學，微電子與固體電子學院，講師
研究方向
研究內容1:化合物半導體方向
1. 化合物半導體異質結物理。
2．GaN基高電子遷移率電晶體器件物理及製備工藝。
3. 針對化合物半導體器件的新型耐壓終端技術。
研究內容2:Si基小尺寸器件方向
1. 應變Si的製備與表征。
2．新型應變結構及相關器件物理。
近期發表的論文
1.Qian Luo, Di Zhao, Xiangzhan Wang, Qi Yu, Wei Cui, Kaizhou Tan, Stress Modulation Technology for 45nm-gate-CMOS Strained by a Compressive SiN Film, Nanoscience and Nanotechnology Letters (to be published)
2.Qian Luo and Qi Yu, Self-consistent Results for the 2DEG in a Quantized Triangular Well, Nanoscience and Nanotechnology Letters，Vol. 6, P 861-864, 2014
3. Zhao Di, Luo Qian, Wang Xiangzhan, Yu Qi, Cui Wei, Tan Kaizhou, Performance Enhancement of c-CESL-Strained 95nm-gate NMOSFET Using Trench-Based Structure, Journal of semiconductors (to be published)
4. Xiangzhan Wang, Qingping Zeng, Bin Liu, Cheng Gan, Qian Luo, Qi Yu, Yang Liu, Kaizhou Tan, Xianwei Ying, A Stress Concentration MOSFET Structure, IEEE Transactions on Electron Devices, 2014, 61(1), P.207
5. Ziqi Zhao, Ziyu Zhao, Qian Luo, and Jiangfeng Du, High-voltage RESURF AlGaN/GaN high electron mobility transistor with back electrode, Electronic Letters, 2013, 49(25), P.16380
6.Qian Luo, Bin Liu, Qi Yu, Xiang-zhan Wang, Jing-chun Li, Stress Management for CESL Based Strained PMOSFET Using Trench Structure, IEEE. 2012 11th International Conference on Solid-State and Integrated Circuit Technology Proceedings（ICSICT-2012）, Oct. 29-Nov. 1, 2012, Xi’ an, China, P. S25_04
7.Qian Luo and Qi Yu，Electric Field Modulation by Introducing a Hk Dielectric Film of Tens of Nanometers in AlGaN/GaN HEMT，Nanoscience and Nanotechnology Letters, 2012, 4, P.1
8.Qian Luo, JiangFeng Du, XiangZhan Wang, Ning Ning, Yang Liu and Qi Yu, “An Analytical Model for Field-Plate Optimization in High Electron Mobility Transistor”, Advanced Materials Research, Optical, Electronic Materials and Applications II, Vol.529, p 33-36 (2012)
9. Xiangzhan Wang, Guixia Qin, Qian Luo，Influence of the STI Sidewall Angle on the Induced Channel Stress in Nanoscaled PMOSFETs，Journal of the Korean Physical Society , 2012, 60(10), P.1639
近期申請的專利
1. 羅謙，劉斌，曾慶平，嚴慧，甘程，王向展 具有槽型結構的應變PMOSFET及其製作方法，中國， 201210551776.3
2. 羅謙，劉斌，王向展，於奇，嚴慧 應變溝道鰭式場效應電晶體及其製作方法，中國，201310385577.4
3. 王向展，秦桂霞，羅謙，王微，李競春 一種MOS電晶體局部應力的引入技術，2013.2，中國，ZL201110268524.5
