杜江鋒

杜江鋒，男，博士，電子科技大學教授、博士生導師，1976年6月生。

1998年在電子科技大學獲學士學位；2004年和2010年在電子科技大學微電子學與固體電子學專業先後獲得碩士和工學博士學位；2002年至今，在電子科技大學電子科學與工程學院、"電子薄膜與集成器件國家重點實驗室"從事教學和科研工作。2009年7-8月曾赴澳大利亞維多利亞大學（The Victoria University）進行短期學習進修；2014年9月獲國家公派出國赴英國留學，在謝菲爾德大學（University of Sheffield）電子電氣工程系羅爾斯&羅伊斯研究中心（Rolls-Royce UTC）做訪問學者一年；主講本科專業課程《積體電路測試與封裝》和研究生專業課程《積體電路封裝測試與可靠性 》。

主要研究領域為第三代寬禁帶半導體氮化鎵（GaN）微波毫米波功率器件、新型GaN電力電子器件以及功率集成技術研究、SiC高溫壓力感測器等。

作為項目負責人主持或主研科研項目包括國家重大基礎研究項目（軍口973）子專題2項、國防預研和共性型號項目共8項、國家自然科學基金面上項目2項、以及中央高校基本科研業務費項目、國家重點實驗室基金和產學研橫向合作項目等多項。

已在Sensors and Actuators B、IEEE Trans. on Electron Devices、Journal of Applied Physics、Semicon. Sci & Tech.、Superlattices and Microstructures等重要學術刊物上發表論文50餘篇，其中SCI收錄30餘篇；申請國際發明專利1項，申請中國發明專利30餘項、授權專利20餘項。

基本介紹

• 中文名：杜江鋒
• 國籍：中國
• 出生日期：1976年6月
• 職業：電子科技大學教授、博導 
• 畢業院校：電子科技大學
• 學位：博士

研究領域

主要從事第三代寬禁帶異質結半導體氮化鎵（GaN）異質結理論與建模仿真、微波毫米波GaN HEMT功率器件及單片積體電路（MMIC）、新型GaN基高耐壓功率半導體器件、SiC高溫壓力感測器可靠性和工程化套用等領域的研究。

研究方向

（1）寬禁帶GaN微波毫米波功率器件及MMIC

（2）GaN電力電子功率半導體器件及集成技術

（3）SiC高溫壓力感測器可靠性技術

科研項目

先後主持或主研參與了國家973項目子專題2項、國家自然科學基金面上項目2項、部級預先研究項目3項、部級共性支撐項目5項、廣東省戰略新興產業化項目1項以及多項橫向合作項目等共10餘項科研任務。

部分科研項目清單如下：

1、國家自然科學基金面上項目（項目編號：61376078），第一負責人，2014.01-2017.12

2、部級125預研項目：“新型GaN XXX 研究”(51308030406)，第一負責人，2011.01-2015.12

3、部級115預研項目：“GaNXXX關鍵技術研究”(51308030101)，第一負責人，2006.01-2010.12

4、國家重大基礎安全研究（973）項目子專題：“GaN XXX 研究”(51327010202)，第二負責人, 2004.01-2008.12

5、國家重大基礎安全研究（973）項目子專題：“應變XXX方法”（6139803-01），第二負責人, 2009.01-2013.12

6、部級105預研項目：“新型XXXGaN器件”（41308060104），主研，2001.01-2005.12

7、中央高校基本科研業務費項目：“高耐壓XXXGaN HEMT新結構研究”，第一負責人，2012.07-2014.12

8、部級共性支撐項目共5項：1206GK0047、1107GK00072、1004GK00362、0901GK001、0803GK00431

學術成果

一、代表性期刊學術論文

[40]Jiangfeng Du*,Zhenchao Li, Dong Liu, Zhiyuan Bai, Yang Liu, Qi Yu. "Design of high breakdown voltage vertical GaN p-n diodes with high-K/low-K compound dielectric structure for power electronics applications", Superlattices and Microstructures, 111:302-309(2017) . (SCI)

[39]Zhiyuan Bai,Jiangfeng Du*, Yong Liu, Qi Xin, Yang Liu, Qi Yu. "Study on the electrical degradation of AlGaN/GaN MIS-HEMTs induced by residual stress of SiNx passivation",Solid-State Electronics,133: 31–37(2017).(SCI)

[38]Jiangfeng Du*,Dong Liu, Yong Liu, Zhiyuan Bai, Zhiguang Jiang, Yang Liu, Qi Yu, "Study on high breakdown voltage GaN-based vertical field effect transistor with interfacial charge engineering for power applications", Superlattices and Microstructures, 111:656-664(2017) . (SCI)

[37]Jiangfeng Du*, Ruonan Li, Zhiyuan Bai, Yong Liu, Qi Yu. "High breakdown voltage GaN-on-insulator based heterojunction field effect transistor with a partial back barrier layer",Superlattices and Microstructures, 111:760-766(2017) . (SCI)

[36]Zhiyuan Bai,Jiangfeng Du*, Qi Xin, Ruonan Li, Qi Yu. "Simulation design of high reverse blocking high-K/low-K compound passivation AlGaN/GaN Schottky barrier diode with gated edge termination",Superlattices and Microstructures, 111:1000-1009(2017) . (SCI)

[35]Jiangfeng Du, Kang Wang, Yong Liu, Zhiyuan Bai, Yang Liu, Zhihong Feng, Shaobo Dun, Qi Yu. "Influence of mesa edge capacitance on frequency behaviorof millimeter-wave AlGaN/GaN HEMTs",Solid-State Electronics,129:1-5,(2017) (SCI)

[34]Yong Liu, Jing Ting Luo, Chao Zhao, Jian Zhou, Sameer Ahmad Hasan, Yifan Li, Michael Cooke,Qiang Wu, Wai Pang Ng,Jiangfeng Du, Qi Yu, Yang Liu, and Yong Qing Fu. "Annealing Effect on Structural, Functional, and Device Properties of Flexible ZnO Acoustic Wave Sensors Based on Commercially Available Al Foil",IEEE Trans. on Elecron Devices, 63(11):4535-4541,(2016) (SCI)

[33]Jiangfeng Du, Zehong Hou, Peilin Pan, Zhiyuan Bai, Qi Yu. "Design optimisation of AlGaN/GaN metal insulator semiconductor high electronmobility transistor with high-K/low-K compound gate dielectric layer formillimeter-wave application",Micro & Nano Letters.Vol. 11, Iss. 9, pp. 503-507, (2016) (SCI)

[32]Jiangfeng Du, Dong Liu, Zhiyuan Bai, Nanting Chen, and Qi Yu. "Design optimization of a high-breakdown-voltage GaN-basedvertical HFET with composite current-blocking layer",J. Comput. Electron., 15: 1334-1339, (2016) (SCI)

[31]Jiangfeng Du, Dong Liu, Zhiyuan Bai, Qian Luo, and Qi Yu. "Design and simulation of high-breakdown-voltage GaN-based vertical field-effecttransistor with interfacial charge engineering",Japanese Journal of Applied Physics, 55, 054301. (2016) (SCI)

[30]Jiangfeng Du, Nanting Chen, Zhiguang Jiang , Zhiyuan Bai, Yong Liu, Yang Liu, Qi Yu. “Study on transconductance non-linearity of AlGaN/GaN HEMTs considering acceptor-like traps in barrier layer under the gate”,Solid-State Electronics,115, A,60–64(2016). (SCI)

[29]Yong Liu, Yifan Li, Ahmed. M. el-Hady, C. Zhao,Jiangfeng Du, Yang Liu, Y.Q. Fu. "Flexible and bendable acoustofluidics based on ZnO film coated aluminium foil",Sensors and Actuators B, 221:230-235 (2015) (SCI)

[28]JiangfengDu,DongLiu, ZhiyuanBai,Yong LiuandQiYu. "Design of high breakdown voltage GaN-based vertical HFETswith p-GaN island structure for power applications",Superlattices and Microstructures, 85:690–696(2015) . (SCI)

[27]JiangfengDu,DongLiu,ZiqiZhao,ZhiyuanBai,LiangLi,JianghuiMo andQiYu. "Design of High Breakdown Voltage GaN Vertical HFETs with p-GaN Buried Buffer Layers for Power Switching Applications",Superlattices and Microstructures, 83: 251-260 (2015). (SCI)

[26]Jiangfeng Du,Nanting Chen, Peilin Pan, et al."High breakdown voltage AlGaN/GaN HEMT with high-K/low-K compound passivation",Electronics Letters, 51(1):104-106 (2015). (SCI)

[25]Du Jiangfeng, Xu Peng, Wang Kang, et al. "Small Signal Modeling of AlGaN/GaN HEMTs with Consideration of CPW Capacitances",Journal of Semiconductors, 36(3):034009-1, (2015).

[24]Jiangfeng Du, Yong Liu, Jianghui Mo, Ziqi Zhao, Sini Huang, YangLiu, and Qi Yu. "Design and Simulation of a Nanoscale GaN-Based Vertical HFET with pnp-Superjunction Buffer Structure",Nanoscience and Nanotechnology Letters, 7(2):100-104,(2015). (SCI)

[23]Jiangfeng Du, Hui Yan, Chenggong Yin, Zhihong Feng, Shaobo Dun, and Qi Yu.“Simulation and characterization of millimeter-wave InAlN/GaN high electron mobility transistors using Lombardi mobility model”,Journal of Applied Physics, 115, 164510 (2014).(SCI)

[22]Jiangfeng Du, ZhiYuan Bai, Kunhua Ma, and Qi Yu.“Influence of Trap State Effects on Buffer Leakage Current and Breakdown Voltage in Nano-ChannelAlGaN/GaN DHFETs”,Nanoscience and Nanotechnology Letters,6, 794-797 (2014).(SCI)

[21]Jiangfeng Du, Peilin Pan, Hui Yan, and Qi Yu. "Design Optimization of Nanoscale AlGaN/GaN HEMTs with Composite Metal Gate Structure for Millimeter-WaveApplication",Nanoscience and Nanotechnology Letters,6, 830-834 (2014).(SCI)

[20]Ziqi Zhao,Jiangfeng Du, Ziyu Zhao, and Qian Luo. "A Novel High-Voltage GaN Current Aperture Vertical Electron Transistor with Polarization-Doped Current Blocking Layer",Nanoscience and Nanotechnology Letters,6, 825-829 (2014).(SCI)

[19]Aixin Guo,Jiangfeng Du."Linear and nonlinear optical absorption coefficients and refractive index changes in asymmetrical Gaussian potential quantum wells with applied electric field"，Superlattices and Microstructures，64:158-166 (2013.12). (SCI)

[18]Jiangfeng Du, Xinchuan Zhang, Zhihong Feng, Shaobo Dun, Ziqi Zhao, Jianglong Yin and Kunhua Ma. “Correlation Between Electrical Properties Degradation and Short-Channel Effects in Nano-Gate AlGaN/GaN High Electron Mobility Transistors”,Nanoscience and Nanotechnology Letters, 4(9): 944-947 (2012).(SCI)

[17]Ziqi Zhao,Jiangfeng Du, Qian Luo, and Mohua Yang. “Impact of Surface Traps on the Breakdown Voltage of Passivated AlGaN/GaN HEMTs under High-field Stress”,Micro & Nano Letters, 11(7): 1140- 1142 (2012).(SCI)

[16] Qian Luo,JiangFeng Du, XiangZhan Wang, Ning Ning, Yang Liu and Qi Yu. “An Analytical Model for Field-Plate Optimization in High Electron Mobility Transistor”,Advanced Materials Research, Optical, Electronic Materials and Applications II, Vol.529, p 33-36 (2012)

[15] Ziqi Zhao,Jiangfeng Du, Qi Yu, and Mohua Yang. “Influence of Deep-Level Traps on the Breakdown Characteristics of AlGaN/GaN High Electron Mobility Transistors”,Nanoscience and Nanotechnology Letters, 4(8): 790-793 ( 2012).(SCI)

[14] Peng Xu,Jiangfeng Du, Shaobo Dun, Zhihong Feng, Qian Luo, Ziqi Zhao and Qi Yu. “Improvement of Small Signal Modeling and Parameter Extraction for AlGaN/GaN High Electron Mobility Transistor”,Chinese Journal Of Vacuum Science And Technology, Vol.32(5):404-407 (2012).

[13] Shenghui Lu,Jiangfeng Du, Wei Zhou and Jianxin Xia. “Simplification of Non-Linear Dependence of Fermi Level on 2D Electron Gas Density in AlGaN/ GaN High Electron Mobility Transistors”,Chinese Journal of Vacuum Science And Technology, Vol.31(2):225-228 (2011).

[12]Jiangfeng Du, Jinxia Zhao, Qian Luo, Qi Yu, Jianxin Xia and Mohua Yang. “Investigation of GaN-based multilayer structure films on sapphire substrate by spectroscopic ellipsometry”,Journal of Functional Materials, Vol.31(5):878-880 (2010)

[11] Shenghui Lu,Jiangfeng Du, Qian Luo , Qi Yu , Wei Zhou and Jianxin Xia. “Analytical charge control model for AlGaN/GaN MIS-HFET including undepleted barrier layer”,Journal of Semiconductor,Vol.31(9): 094004-1(2010)

[10] Shenghui Lu,Jiangfeng Du, Qian Luo, Qi Yu, Wei Zhou, Jianxin Xia and Mohua Yang. “An Analytic Linear Charge Control Model for Enhancement Mode AlGaN/GaN Insulated Gate HEMTs”,Research and Progress of Solid State Electronics, Vol.30(3), pp.323-326(2010)

[09]JiangfengDu, Jinxia Zhao, Qi Yu and Mohua Yang. “X-ray Photoelectron Spectroscopy and Spectroscopic Ellipsometry Study of the Thermal Oxide on Gallium Nitride”,Materials Review, Vol.23(11):12-14 (2009)

[08]Jiangfeng Du, Jinxia Zhao, Jie Wu, Yuehan Yang, Peng Wu, Chong Jin, and Wei Chen. “Electric Field Distribution Analytic Model for Field-Plated GaN HEMTs”,Journal of Electronic Science and Technology of China, Vol.37(2):297-300 (2008)

[07]Jiangfeng Du, Dawei Luo, Qian Luo, Shenghui Lu, Qi Yu and Mohua Yang. “Temperature Distribution of Channel Electron in Field-Plated GaN HEMT for Reduction of Current Collapse”,Semiconductor Technology, Vol.33 Supplement, 104-108(2008)

[06] Yanling Zhu,Jiangfeng Du, Muchang Luo, Hong Zhao, Wenbo Zhao, Lieyun Huang, Hong Ji, Qi Yu and Mohua Yang. “Ohmic Contacts to n-type Al0.6Ga0.4N for Solar-Blind Detectors”,Journal of Semiconductors, Vol.29(9), pp.1661-1665 (2008).

[05] Shenghui Lu,Jiangfeng Du, Chong Jin, Wei Zhou and Mohua Yang. “Investigation on the response dependence of gate step pulse in AlGaN/GaN HEMT”,Research and Progress of Solid State Electronics, Vol.27(3), pp.335-338 (2007)

[04] Qian Luo,Jiangfeng Du, Mohua Yang and Liangchen Wang, Tong Jin and Yu Qi. “Back-to-back Schottky diode adopted for the measurement of GaN films and its Schottky contacts”,Semiconductor Science Technology, 20(2005) 606–610.(SCI)

[03] Fei Long,Jiangfeng Du, Qian Luo, Wei Zhou, Jianxin Xia and Mohua Yang. “A Research on Current Collapse of GaN HEMTs Under DC High Voltage”,Journal of Semiconductors, Vol.27 Supplement, 227-230(2006)

[02]Jiangfeng Du,Bo Zhao, Qian Luo, Qi Yu, Chong Jing and Jing-chun Li. “Inverstigation of Ti/Al/Ni/Au Multilayer Ohmic contact to unintentional doped GaN”,Electronic Components and Materials, Vol.23 No.12, 2-6(2004).

[01] Qian Luo, Mohua Yang,Jiangfeng Du, Dinglei Mei, Liangchen Wang and Yunxia Bai. “New Method for Measurement of GaN Film and Its Schottky Cantact”,Journal of Semiconductors, Vo1.25(12):1730-1734(2004).

二、代表性學術會議論文

[14]Jiangfeng Du, Yong Liu, Sini Huang, Ziqi Zhao, Qi Yu. "Design and Simulation of High Breakdown Voltage GaN-based Vertical HFETwithpnp-Superjunction Buffer Structure",the 7thInternational Conference onTechnological Advances of Thin Films & Surface Coatings (ThinFilms2014), 15-18 July 2014, Chongqing, China.

[13]Jiangfeng Du, Dong Liu, Jie Luo, Peilin Pan, Ziqi Zhao, Qi Yu. "Design Optimization of High Breakdown Voltage GaN-VHFETs with p-GaNburiedbuffer Layer forPowerSwitchingApplications" ,the 7thInternational Conference onTechnological Advances of Thin Films & Surface Coatings (ThinFilms2014), 15-18 July 2014, Chongqing, China.

[12]Nanting Chen,Jiangfeng Du, Zhiyuan Bai, Chenggong Yin, Hui Yan, Qi Yu. "Study on Transconductance Non-linearity of AlGaN/GaN HEMTsConsideringAcceptor-like Traps in Barrier Layer under the Gate" ,the 7thInternational Conference onTechnological Advances of Thin Films & Surface Coatings (ThinFilms2014), 15-18 July 2014, Chongqing, China.

[11]Jiangfeng Du, Kang Wang，Chenggong Yin, Zhiyuan Bai, Qi Yu, Zhihong Feng, Shaobo Dun. “Small Signal Modeling of 90 nm gate-length AlGaN/GaN HEMTs Considering Mesa Edge Effects”, 2014 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC 2014), 18-24 June 2014, Chengdu, China.

[10]Jiangfeng Du, Kunhua Ma, Ziqi Zhao, Qi Yu. “Simulation of Trap State Effects in GaN DHFETs on Buffer Leakage Current and Breakdown Voltage”, 2013 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC 2013), 3-5 June 2013, Hongkong, China.

[09]Jiangfeng Du, Xinchuan Zhang, Zhihong Feng, Shaobo Dun, Ziqi Zhao, Jianglong Yin, Kunhua Ma, and Yan Pu. “Correlation between Electrical Properties Degradation and Short-channel Effects in Nano-gate AlGaN/GaN HEMTs”, MMWCST2012, 19-20 April 2012, Chengdu, China.

[08]Ziqi Zhao, Dewei Liao, andJiangfeng Du, “Effects of surface traps on the breakdown voltage of passivated AlGaNGaN HEMTs under high-field stress”, IEEE International Conference on Solid-State and Integrated Circuit Technology, 2012, Xi’an, China.

[07]Jiangfeng Du, Peng Xu, Shaobo Dun, Zhihong Feng, Luo Qian, Liu Yang, Yu Qi，Yang Mohua. “Modeling of AlGaN/GaN HEMT with Consideration of CPW Capacitances”, 15th International Symposium on the Physics of Semiconductors and Applications. July 5-8, 2011, Jeju, Korea.

[06]Jiangfeng Du, Jinxia Zhao, Qi Yu, and Mohua Yang, “Activation characteristics of Si-implanted GaN by rapid thermal annealing” 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT-2010, p 1554-1556, Shanghai, China.

[05]Jiangfeng Du, Jinxia Zhao, Qi Yu, and Mohua Yang, “Activation characteristics of Si-implanted GaN by rapid thermal annealing”, 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2010), Nov. 1- 4, 2010, Shanghai, China.

[04]Jiangfeng Du, Jinxia Zhao , Qian Luo , Zhiwei Yu , Jianxin Xia and Mohua Yang, “Growth and characteristics analysis of the thermal oxide grown on gallium nitride”, IEEE the International Symposium on Photonics and Optoelectronics(SOPO2009),Wuhan,China, August 14-16,2009

[03]Jiangfeng Du, Dawei Luo, Qian Luo, Shenghui Lu, Qi Yu and Mohua Yang, “A study of the Temperature Distribution of Channel Electron in Field-Plated GaN HEMT for Reduction of Current Collapse”, 15th National conference on Compound Semiconductor Materials, Microwave Devices and Optoelectronic Devices, Guangzhou, China, Nov.30- Dec.5, 2008

[02]Du Jiang-feng, Zhao Jin-xia, Wu Jie, Yang Yue-han, Jin Chong, “Electric Field Electric Field Distribution Analytic Model for Field-Plated GaN HEMTsDistribution Analytic Model for Field-Plated GaN HEMTs”, 2007 Doctoral Forum of China, Shanxi Xi’an, 638-642, Sept. 2007

[01]Qian Luo,Jiangfeng Du, Mohua Yang, Shenghui Lu, Wei Zhou, Jianxin Xia and Qi Yu, “Investigation of Surface Charging Effects in AlGaN/GaN HEMT by a New Measurement Method”, 2006 8th IEEE International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2006), October 23-26, 2006, Shanghai, China.

三、主要的發明專利情況

[30]杜江鋒, 李振超, 劉東, 白智元, 於奇，李述洲. 半導體結構、半導體組件及功率半導體器件，PCT國際發明專利，國際申請號：PCT/CN2016/095675，國際申請日：2016.08.17

[29]杜江鋒, 陳南庭，潘沛霖，於奇. 一種具有複合鈍化層結構的場效應電晶體. 中國發明專利, 申請號：201410457922.5，授權號：ZL201410457922.5，授權日期：2017.10.17

[28]杜江鋒, 陳南庭,潘沛霖,於奇. 一種具有電偶極層結構的氮化鎵基異質結場效應電晶體. 中國發明專利, 申請號：201410427468.9，授權號：ZL201410427468.9，授權日期：2017.07.28

[27]杜江鋒, 嚴慧 等. 一種具有複合金屬柵的氮化鎵基高電子遷移率電晶體,中國發明專利,授權號：ZL201310364505.1，授權日期：2017.04.19

[26]杜江鋒, 潘沛霖, 王康 等.一種具有局部背勢壘的氮化鎵基功率異質結場效應電晶體. 中國發明專利,申請號：201410679795.3，授權號：ZL201410679795.3，授權日期：2017.04.05

[25]杜江鋒, 潘沛霖, 陳南庭 等. 一種具有複合溝道層的氮化鎵基增強型異質結場效應電晶體. 中國發明專利,授權號： ZL201410454173.0，授權日期：2017.03.22

[24]杜江鋒, 潘沛霖, 陳南庭, 劉東, 於奇. 一種具有複合勢壘層的氮化鎵基異質結場效應電晶體. 中國發明專利,授權號：ZL201410476301.1，授權日期：2017.01.25

[23]杜江鋒, 尹江龍 等. 一種具有縱向複合緩衝層的氮化鎵基高電子遷移率電晶體，中國發明專利,授權號：ZL201210281409.6，授權日期：2016.12.21

[22]杜江鋒, 趙子奇 等.一種帶有極化摻雜電流阻擋層的垂直氮化鎵基異質結場效應電晶體,中國發明專利,授權號：ZL201310000142.3，授權日期：2016.04.27

[21]杜江鋒, 趙子奇 等. 一種具有橫向p-n結複合緩衝層結構的氮化鎵基異質結場效應電晶體，中國發明專利,授權號：ZL201210341509.3，授權日期：2016.04.27

[20]杜江鋒, 趙子奇,馬坤華 等.一種具有複合緩衝層的氮化鎵基高電子遷移率電晶體，中國發明專利，

授權號：ZL201210142937.3，授權日期：2014.07.23

[19]杜江鋒, 趙子奇,尹江龍 等. 一種具有背電極結構的氮化鎵基異質結場效應電晶體, 中國發明專利，

授權號：ZL201210324418.9，授權日期：2014.12.10

[18]周偉, 靳翀,杜江鋒等. 一種氮化鎵基高電子遷移率電晶體，中國發明專利，

授權號：ZL200610022726.0，授權日期：2009.04.15

[17]杜江鋒,蔣知廣,白智元,於奇.具有襯底內複合介質層結構的氮化鎵異質結場效應管，中國發明專利，申請號：201710033229.9

[16]杜江鋒,白智元,蔣知廣,於奇.一種雙結型柵氮化鎵異質結場效應管，中國發明專利，申請號：201610928271.2

[15]杜江鋒,白智元,蔣知廣,於奇.一種氮面增強型氮化鎵基異質結場效應管，中國發明專利，申請號：201610934823.0

[14]杜江鋒, 李振超, 劉東, 白智元, 於奇，李述洲. 半導體結構、半導體組件及功率半導體器件，中國發明專利， 申請號：201610522196.X

[13]杜江鋒, 李振超.一種具有半絕緣層的氮化鎵基高電子遷移率電晶體,中國發明專利，申請號：201610270783.4

[12]杜江鋒,劉東,白智元,潘沛霖,於奇.電荷補償耐壓結構垂直氮化鎵基異質結場效應管, 中國發明專利, 申請號：201510410936.6

[11]杜江鋒,劉東,白智元 ,潘沛霖,於奇.具有複合低K電流阻擋層的垂直氮化鎵基異質結場效應管.中國發明專利, 申請號： 201510367028.3

[10]杜江鋒, 潘沛霖 等. 一種具有埋柵結構的氮化鎵基增強耗盡型異質結場效應電晶體. 中國發明專利, 201410433662.8

[09]杜江鋒, 劉東,陳南庭 等. 一種具有P型GaN島的垂直氮化鎵基異質結場效應電晶體. 中國發明專利, 201410433616.8

[08]杜江鋒, 潘沛霖, 陳南庭, 於奇. 一種氮化鎵基增強型異質結場效應電晶體. 中國發明專利, 201410427708.5

[07]杜江鋒, 陳南庭,潘沛霖，於奇. 一種具有體內複合場板結構的氮化鎵基異質結場效應管. 中國發明專利, 申請號： 201410454183.4

[06]杜江鋒, 潘沛霖, 陳南庭, 於奇. 一種具有局部帽層的氮化鎵基異質結場效應電晶體. 中國發明專利, 201410427351.0

[05]杜江鋒, 潘沛霖, 陳南庭, 王康, 於奇. 一種具有負離子注入鈍化層的場效應電晶體. 中國發明專利, 201410473240.3

[04]杜江鋒, 潘沛霖,等. 一種具有複合柵介質層的氮化鎵基異質結場效應電晶體. 中國發明專利,申請號：201410534795.4

[03]杜江鋒, 趙子奇 等. 一種帶有p型氮化鎵埋層的垂直氮化鎵基異質結場效應電晶體，中國發明專利,201310049018.6

[02]杜江鋒, 趙子奇 等. 一種超結垂直氮化鎵基異質結場效應電晶體，中國發明專利,201310000143.8

[01]杜江鋒, 盧盛輝 等. 一種氮化鎵基高電子遷移率電晶體，中國發明專利, 申請號：200510021536.2

學生培養

一、研究生招生與培養（導師代碼：11375）

★ 招收研究生數量：博士生1~2名/年；碩士生3~5名/年。

★博士研究生招生專業：080903 微電子學與 固體電子學

---研究方向：01 新型半導體材料 與功率器件；02 功率積體電路與系統；06 微電子學理論與 技術

★碩士研究生招生專業 ：080903 微電子學與固體電子學；085209 積體電路工程

--- 研究方向：01 新型功率半導體器件與積體電路和系統；05 積體電路測試、封裝、可靠性技術；06 射頻微波、超高速器件與電路

★ 目前在讀博士和碩士研究生共10餘名。

★ 指導的碩士生2012級陳南庭、2013級劉東和潘沛霖、2015級博士生劉勇先後獲得“國家獎學金”獎勵。

二、 研究生畢業走向

★ 與中國科學院半導體所、物理所和微電子所、中電集團第13所、44所和55所、University of Sheffield等國內外研究機構和大學之間具有長期的合作關係。

★ 畢業研究生就業主要集中在微電子產業集中地區，如長三角、珠三角、京津和川渝等國內外知名企業和研究機構。