李洪來，男，1989年出生，博士，湖南大學材料科學與工程學院助理教授、碩士生導師、嶽麓學者。
基本介紹
- 中文名：李洪來
- 出生日期：1989年
- 學位/學歷：博士
- 職業：教師
- 專業方向：材料科學與工程學
- 主要成就：國家自然科學二等獎
- 任職院校：湖南大學
研究領域,學術成果,所獲榮譽,
研究領域
主要從事二維半導體納米材料帶隙調控及其光電性能研究，運用化學氣相沉積系統（CVD）、高分辨透射電鏡（HRTEM）、Raman光譜儀、螢光光譜儀（PL）、電子束曝光系統（EBL）等多種製備分析手段研究各種半導體生長驗試盛規律、原子結構、光電子學性能等。
學術成果
目前已籃芝舟享在Nat. Nanotechnol.、Chem. Soc. Rev.、J. Am. Chem. Soc.、ACS Nano、Nano Lett.、Nanoscale等國際權威學術期射朽棵刊發表相關SCI論文（且多為ESI高被引論文）24篇，獲得專利2項，放提組並獲2017年湖南省自然科學一等獎（排名第船鴉煉紋三）。
代表性論文及著作：
(1) Honglai Li, Xiao Wang, Xiaoli Zhu, Xiangfeng Duan, Anlian Pan* Composition modulation in one-dimensional and two-dimensional chalcogenide semiconductor nanostructures. Chem. Soc. Rev. 2018,47, 7504-7521 (一區，IF=40.2)
(2) Honglai Li, Hongjun Liu, Linwei Zhou, et al. Strain-Tuning Atomic Substitution in Two-Dimensional Atomic Crystals. ACS Nano, 2018, 12: 4853–4860（一區，阿重IF=13.7）
(3) Honglai Li, Xueping Wu, Hongjun Liu, et al. Composition-Modulated Two-Dimensional Semiconductor Lateral Heterostructures via Layer-Selected Atomic Substitution. ACS Nano, 2017, 11(1): 961–967（一腳槳鴉區，IF=13.7）
(4) Honglai Li, Qinglin Zhang, Xidong Duan, et al. Lateral growth of composition graded atomic layer MoS2(1?x)Se2x nanosheets. J. Am. Chem. Soc., 2015, 137(16): 5284–5287（一區，IF=14.36）
(5) Honglai Li, Xidong Duan, Xueping Wu, et al. Growth of alloy MoS2xSe2(1?x) nanosheets with fully tunable chemical compositions and optical properties. J. Am. Chem. Soc., 2014, 136(10): 3756–3759（一區，IF=14.36）
(6) Xueping Wu#, Honglai Li#, Hongjun Liu#, et al. Spatially composition-modulated two-dimensional WS2xSe2(1-x) nanosheets. Nanoscale, 2017, 9, 4707–4712（並列第一作者，一區，IF=7.37）
(7) Xidong Duan, Chen Wang, Jonathan C. Shaw, Rui Cheng, Yu Chen, Honglai Li, et al. Lateral epitaxial growth of two-dimensional layered semiconductor heterojunctions. Nat. Nanotechnol., 2014, 9: 1024–1030（Nature子刊，IF=38.99）
(8) Xinliang Chen, Honglai Li, Zhaoyang Qi, et al. Synthesis and optoelectronic properties of quaternary GaInAsSb alloy nanosheets. Nanotechnol., 2016, 27: 505602
(9) Yaqin Zou, Honglai Li, Pinyun Ren, et al. Microphotoluminescence of individual ZnSe nanoribbons. Mater. Lett., 2014, 129: 118–121
(10) Cuihuan Ge, Honglai Li, Xiaoli Zhu*, Anlian Pan*. Band gap engineering of atomically thin two-dimensional semiconductors. Chin. Phys. B, 2017, 26(3): 034208
(11) Jianzhe Liu, Congxin Xia, Honglai Li, Anlian Pan*. High on/off ratio photosensitive field effect transistors based on few layer SnS2. Nanotechnol., 2016, 27: 34LT01
(12) Yankun Yang, Tiefeng Yang, Honglai Li, et al. High performance photodetectors based on high quality InP nanowires. Chin. Phys. B, 2016, 25(11): 118106
所獲榮譽
2020年1月10日，獲得國家自然科學二等獎（項目名稱“低維半導體材料的能帶結構與光子特性調控”，第四完成人）。
(6) Xueping Wu#, Honglai Li#, Hongjun Liu#, et al. Spatially composition-modulated two-dimensional WS2xSe2(1-x) nanosheets. Nanoscale, 2017, 9, 4707–4712（並列第一作者，一區，IF=7.37）
(7) Xidong Duan, Chen Wang, Jonathan C. Shaw, Rui Cheng, Yu Chen, Honglai Li, et al. Lateral epitaxial growth of two-dimensional layered semiconductor heterojunctions. Nat. Nanotechnol., 2014, 9: 1024–1030（Nature子刊，IF=38.99）
(8) Xinliang Chen, Honglai Li, Zhaoyang Qi, et al. Synthesis and optoelectronic properties of quaternary GaInAsSb alloy nanosheets. Nanotechnol., 2016, 27: 505602
(9) Yaqin Zou, Honglai Li, Pinyun Ren, et al. Microphotoluminescence of individual ZnSe nanoribbons. Mater. Lett., 2014, 129: 118–121
(10) Cuihuan Ge, Honglai Li, Xiaoli Zhu*, Anlian Pan*. Band gap engineering of atomically thin two-dimensional semiconductors. Chin. Phys. B, 2017, 26(3): 034208
(11) Jianzhe Liu, Congxin Xia, Honglai Li, Anlian Pan*. High on/off ratio photosensitive field effect transistors based on few layer SnS2. Nanotechnol., 2016, 27: 34LT01
(12) Yankun Yang, Tiefeng Yang, Honglai Li, et al. High performance photodetectors based on high quality InP nanowires. Chin. Phys. B, 2016, 25(11): 118106
所獲榮譽
2020年1月10日，獲得國家自然科學二等獎（項目名稱“低維半導體材料的能帶結構與光子特性調控”，第四完成人）。
