朱勤生，研究員，博士生導師。1951年5月生。1978年畢業於南京工學院（東南大學），後考入南京大學物理系攻讀碩士研究生，後留校任教。經選拔，於1983年赴日本名古屋大學學習，1986年獲碩士學位，1989年獲博士學位。在日本期間，主要從事紅光InGaAsP/GaAs材料光電特性和藍紫光GaN材料的物理特性研究。1991年回國，並一直在中國科學院半導體研究所長期從事寬禁帶半導體低維結構材料與器件物理研究工作。1995年至2000年曾任表面物理國家重點實驗室（半導體所區）實驗室主任。2002年作為學術帶頭人加入半導體材料科學重點實驗室MOCVD組（現更名為超寬禁帶半導體材料研究組）。2011年5月退休後返聘為學術顧問。2014年4月26日下午5時30分許在家中身亡。
基本介紹
- 中文名：朱勤生
- 出生日期：1951年5月
- 職業：研究員，博士生導師
- 畢業院校：南京工學院（東南大學）
- 學歷：博士
科研貢獻,完成/在研主要項目,代表性論著,悼詞,
科研貢獻
在中科院半導體所任研究員期間，共發表SCI收錄學術論文110多篇，其中，國際一流雜誌Phys.Rev.B 3篇，Appl.Phys.Lett. 28篇，J.Appl.Phys. 12篇,Crystal Growth & Design 1篇，CrystEng Comm 2篇；申請國家發明專利13項，其中獲得授權5項；承擔和參與科研項目15項，其中作為項目負責人主持科研項目4項，作為學術骨幹參與項目11項。
在半導體材料科學重點實驗室任博士生導師期間，共培養和指導研究生40多名。其中：博士36名，碩士4名。有1名博士研究生在APL雜誌發表的文章被Nature雜誌作為研究亮點重點評論報導，其發表在PRB雜誌的文章還被美國套用物理協會（AIP）主辦的“Virtue Journal”全文轉載；有3名博士研究生獲得中國科學院半導體研究所“五四青年學術交流會”一等獎；有4名博士研究生獲得中國科學院研究生院優秀畢業生稱號；有3名博士研究生獲得中國科學院研究生院（後更名為中國科學院大學）三好學生標兵稱號；有3名博士研究生獲得中國科學院院長優秀獎。
完成/在研主要項目
1、作為課題負責人主持的科研項目（合計4項）：
（1）國家973項目“信息功能材料相關基礎問題研究”子課題“低維結構材料物理特性研究”（2001-2005年）；
（1）國家973項目“信息功能材料相關基礎問題研究”子課題“低維結構材料物理特性研究”（2001-2005年）；
（2）國家自然科學基金面上項目“高探測率垂直入射GaAs/AlGaAs多量子阱紅外探測器”（1997-1999年）；
（3）北京市自然科學基金項目“新型垂直入射GaAs/AlGaAs多量子阱紅外探測器的研製”（1996-1999年）；
（4）中科院半導體所所長基金項目“垂直入射GaAs/AlGaAs紅外吸收的物理特性的研究”（1997-1999年）。
2、作為學術骨幹參與的科研項目（合計11項）
（1） 國家863重大專項“高效半導體照明關鍵材料技術研發”課題1“大尺寸Si襯底GaN基LED外延生長、晶片製備及封裝技術”子課題。（2011.1～2013.12）
（2） 國家863項目“生長溫度周期調製MOCVD法製備ZnO材料及發光器件研究”（2007.12～2010.12）
（3） 國家863項目”矽基氮化鎵厚膜襯底材料製備研究“（2007.12～2010.12）
（4） 國家973項目”全組分可調III族氮化物半導體光電功能材料及其器件套用”，課題5“自支撐AlN襯底材料及AlN/藍寶石複合襯底材料的製備”子課題（2011.8～2015.8）
（5） 國家973項目“半導體光電信息功能材料的基礎研究”子課題:“大失配異質體系材料襯底研究”（2006.9～2011.9）
（6） 國家自然科學基金重大研究計畫“面向能源的光電轉換材料”培育項目“利用玻璃襯底製備新型InGaN 基量子點全光譜太陽電池材料研究”（2013.1-2015.12）
（7） 國家自然科學基金面上項目“生長溫度周期調製的MOCVD法製備p型ZnO薄膜研究”（2008.1～2010.12）
（8） 國家自然基金面上項目“大尺寸GaN厚膜襯底材料自剝離製備研究”（2011.1~2013.12）
（9） 國家自然基金面上項目“矽基無應變InGa(Al)N/InGaAlN量子阱的研究”（2004.1～2006.12）
（10） 中國科學院科研裝備研製項目“氮化鎵專用複合型MOCVD-HVPE生長設備”（2005.11～2007.11）
（11） 院地合作技術諮詢項目“協助杭州錢宏光電科技有限公司組建半導體材料生產線技術諮詢項目”（2007.11～2010.11）
代表性論著
一、發表學術論文（合計117篇）
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[12]Qingsheng Zhu, Ju Wu, ChengmingLi, Zhanguo Wang, Conduction and valence band discontinuities in some newsemiconductou heterojunctions,Journalof Nanoscience and nanotechnology,11,9368-9383, 2011(綜述文章)
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[14] Y.P.He,Q.S.Zhu,Z.T.Zhong, G.Z.Zhang, J.Xiao, Z.P.Cao, X.H.Sun, H.Z. Yang ，Line widthof the infrared absorption spectra due to bound-to-continuum transition inGaAs/AlxGa1-xAs multiple quantum well structures，Appl.Phys. Lett., 73 (1998) 1131-1133
[15] Zhen Chen, Da-Cheng Lu,Peide Han, Xianglin Liu, Xiaohui Wang, Yufeng Li, Hairong Yuan, Yuan Lu, LidaBing,Qinsheng Zhu, andZhanguo Wang , The structure and current voltagecharacteristicsof multi-sheet InGaN quantum dotsgrown by a new method,J.Cryst. Growth，243(2002)19-24
[16] Zhen Chen, Hairong Yuan,Da-Cheng Lu, Xuehao Sun, Shouke Wan, Xianglin Liu, Peide Han, Xiaohui Wang,QinshengZhu, and Zhanguo Wang, Nitrogen vacancy scattering in GaN grownby metal-organic vapor phase epitaxy,Solid-StateElectronics,46(2002)2069-2074
[17] B. Z. Qu,Q.S. Zhu, X. H. Sun, S. K. Wan, and Z. G. Wang, Photoluminescenceof Mg-doped GaN grown by metalorganic chemical vapor deposition,J. Vac. Sci. Technol. A,21（2003）838-841
[18] Baozhuang Qu, Zhen Chen, Dacheng Lu, Peide Han,Xianglin Liu,Xiaohui Wang, Du Wang,Qinsheng Zhu, ZhanguoWang, Structure characteristics of InGaN quantumdots fabricatedby passivation and lowtemperature method,J. Cryst.Growth，252(2003) 19–25
[19] Qu Baozhuang ,ZhuQinsheng, Chen Zhen, Lu Dacheng, Han Peide, Liu Xianglin, WangXiaohui, Sun Xuehao, Li Yufeng, Lu Yuan, Li Dabing, Wang Zhanguo(曲寶壯，朱勤生，陳振，陸大成，韓培德，劉祥林，王曉暉，孫學浩，李昱峰，陸沅，黎大兵，王占國),Structure and I-V characteristics of InGaN quantumdots grown by a new method(新工藝生長的InGaN量子點的結構與電學性質研究),Journal of Functional Materials and devices(功能材料與器件學報),l9( 2003)12-15
[20] Y. Lu, G. W. Cong, X. L. Liu,D. C. Lu,Q. S. Zhu, X. H. Wang,J. J. Wu, Z.G. Wang,Growth of crack-free GaN films on Si(111) substrate byusing Al-rich AIN buffer layer,J.Appl. Phys., 96(9) (2004) 4982-4988
[21] J. M. Li, Y. W. Lu, D. B.Li, X. X. Han,Q. S. Zhu, X. L.Liu, Z. G. Wang, Effect of spontaneous and piezoelectric polarization onintersubband transition in AlxGa1-xN/GaN quantum well ,Journal of Vacuum Science andTechnology B, 22-6 (2004) 2568-2573
[22] Xiuxun Han, Zhen Chen,Dabing Li, Jiejun Wu, Jiemin Li, Xuehao Sun, Xianglin Liu, Peide Han, XiaohuiWang,Qinsheng Zhu, ZhanguoWang, Structural and optical properties of 3D growth multilayer InGaN/GaNquantum dots by metalorganic chemical vapor deposition,J. Cryst. Growth，266(2004)423-428
[23] Jiejun Wu, Dabing Li, YuanLu, Xiuxun Han,Jiemin Li,Hongyuan Wei, Tingting Kang, Xiaohui Wang, Xianglin Liu,QinshengZhuand ZhanguoWang , Crack-free InAlGaN quaternary alloy films grown on Si(1 1 1) substrateby metalorganic chemical vapor deposition ,J. Cryst. Growth，273 (2004)79-95
[24] Xiuxun Han,Dabing Li, Hairong Yuan, XuehaoSun, Xianglin Liu, Xiaohui Wang，QinshengZhu, Zhanguo Wang , Dislocation scattering in a two-dimensionalelectron gas of an AlxGa1-xN/GaN heterostructure ,Physica Status Solidi (b) ,241 (2004) 3000-3008
[25] G.W.Cong, H.Y.Wei,P.F.Zhang, W.Q.Peng, J.J.Wu, X.L.Liu, C.M.Jiao,W.G.Hu,Q.S.Zhu,Z.G.Wang, One-step growth of ZnO from films to vertically well-aligned nanorodsand the morphology-dependent raman scattering,Appl. Phys. Lett., 87 (2005)231903-231905
[26] Han, Xiuxun Li, Jiemin; Wu,Jiejun; Cong, Guangwei; Liu, Xianglin;Zhu, Qinsheng; Wang,Zhanguo, Intersubband optical absorption in quantum dots-in-a-wellheterostructures,J. Appl.Phys., 98（5）（2005）1-5
[27] Jiejun Wu, Xiuxun Han,Jiemin Li, Dabing Li, Yuan Lu, Hongyuan Wei, Guangwei Cong, Xianglin Liu,QinshengZhuandZhanguo Wang, Crack-free GaN/Si(111) epitaxial layers grown with InAlGaN alloyas compliant interlayer by metalorganic chemical vapor deposition ,J. Cryst. Growth，279 (2005)335-340
[28] J.M. Li, X.X. Han, J.J. Wu,X.L. Liu,Q.S. Zhuand Z.G. Wang, Origin of the blueshiftin the infrared absorbance of intersubband transitions in AlxGa1-xN/GaN multiple quantum wells,Physica E:Low-dimensionalsystems & nanostructures,25(2005) 575-581
[29] Z. Chen, S.J. Chua, P.D.Han, X.L. Liu, D.C. Lu,Q.S. Zhu, Z.G. Wang,S. Tripathy , Luminescence properties of multi-layer InGaN quantum dots grownon C- and R-plane sapphire substrates ,PhysicaE: Low-dimensional systems & nanostructures,27 (2005) 314-318
[30] Xiuxun Han, Jiemin Li,Jiejun Wu, Guangwei Cong,. Xianglin Liu,Qinsheng Zhu,Zhangguo Wang , Theoretical analysisof gate voltage-controlled subband states in an AlxGa1−xN/GaNheterostructure,Physica E:Low-dimensional systems & nanostructures,28（3）（2005）230-236
[31] J.M.Li, Y.W. Lu, X.X. Han,J.J. Wu, X.L. Liu,Q.S. Zhuand Z.G. Wang, Theoreticalinvestigation of intersubband transition in AlxGa1−xN/GaN/AlyGa1−yNstep quantum well ,Physica E:Low-dimensionalsystems & nanostructures,28(2005) 453-461
[32] XiuXun Han, Jiemin Li,Jiejun Wu, Xiaohui Wang, Dabing Li, Xianglin Liu, Peide Han,QinshengZhu, Zhanguo Wang, Effects of different modified underlayersurface on growth and optical properties of InGaN quantum dots,Vacuum,77(2005)307-314
[33] Xiuxun Han, Jiejun Wu,Jiemin Li, Guangwei Cong, Xianglin Liu,Qinsheng Zhu, ZhanguoWang, Photoluminescence investigation of two-dimensional electron gas in anundoped AlxGa1-xN/GaN heterostructure,ChinesePhysics Letter, 22 (8)（2005）2096-2099
[34] G. W. Cong, W. Q. Peng, H.Y. Wei, X. X. Han, J. J. Wu, X. L. Liu,Q. S. Zhu, Z. G. Wang,J. G. Lu, Z. Z. Ye, L. P. Zhu,H.J. Qian, R. Su, C. H. Hong, J. Zhong, K. Ibrahim, T. D. Hu, Comparison ofvalence band x-ray photoelectron spectrum between Al–N-codoped and N-doped ZnOfilms ,Appl. Phys. Lett.88(2006) 062110-062112
[35] G. W. Cong, W. Q. Peng, H.Y. Wei, X. L. Liu, J. J. Wu, X. X. Han,Q. S. Zhu, Z. G. Wang,Z. Z. Ye, J. G. Lu, L. P. Zhu, H. J. Qian, R. Su,C. H. Hong, J. Zhong, K. I.brahim, T. D. Hu , Aluminium Doping Induced Enhancement of p-d Coupling in ZnO,J. Phys.: Condens. Matter. 18,3081-3087 (2006)
[36] T. T. Kang, X. L. Liu, R. Q.Zhang, W. G. Hu, G. W. Cong, F. A. Zhao,Q. S. Zhu, InN nanoflowers grown by metal organic chemical vapor deposition,Appl. Phys. Lett.89(2006) 07113
[37] Jiejun Wu, Jiemin Li,Guangwei Cong, Hongyuan Wei, Panfeng Zhang, Weiguo Hu, Xianglin Liu,QinshengZhu, and Zhanguo Wang , Temperature dependence of nano-scaleindium clusters and their effects on luminescence properties in InAlGaNquaternary alloys on Si(111) substrates,Nanotechnology, 17 (2006) 1251-1254
[38] Jiejun Wu, Xiuxun Han ,Jiemin Li, Hongyuan Wei, Guangwei Cong, Xianglin Liu,QinshengZhu, Zhanguo Wang, Quanjie Ji, Liping Guo, Tiandou Hu, HuanhuaWang, Crack control in GaN grown on silicon (111) using In dopedlow-temperature AlGaN interlayer by metalorganic chemical vapor deposition ,Optical Materials，28（10） (2006) 1227–1231
[39] Riqing Zhang, Panfeng Zhang,Tingting Kang, Haibo Fan, Xianglin Liu, Shaoyan Yang,Hongyuan Wei,QinshengZhu, Zhanguo Wang , Determination of the valence band offset ofwurtzite InN/ZnO heterojunction by x-ray photoelectron spectroscopy,Appl. Phys. Lett.91, 162104 （2007）
[40] J. M. Li , K. Y. Qian,Q.S. Zhu, Z. G. Wang , Intrasubband and intersubband transitionsin GaAs/AlGaAs multiple quantum wells,Appl.Phys. Lett. 90(2007) 162111.
[41] Ting-Ting Kang，R. Q.Zhang, W. G. Hu, G. W. Cong, F. A. Zhao, X. X. Han, S. Y. Yang, X. L. Liu,Q.S. Zhu, Z. G. Wang, Plasmons in vertically coupled InAs/GaAsquantum dots,Phys. Rev. B 76, 075345 (2007),（被美國AIP主辦的VirtueJournal雜誌全文轉載）
[42] Jiejun Wu, Guoyi Zhang,Xianglin Liu,Qinsheng Zhu, ZhanguoWang, Quanjie Jia, Liping Guo, Effect of an indium-doped barrier on enhancednear-ultraviolet emission from InGaN/AlGaN:In multiple quantum wells grown onSi(111) ,Nanotechnology, 18 (2007) 015402
[43] Wei HY, Cong GW, Zhang PF,Hu WG, Wu JJ,Jiao CM, Liu XL,ZhuQS, Wang ZG, Combined structure of ZnO vertical well-alignednanorods and net-like structures on AIN/sapphire,J. Cryst. Growth，306(1) ,12-15 (2007)
[44] P F Zhang, X L Liu, H Y Wei,H B Fan, Z M Liang, P Jin, S Y Yang, C M Jiao,QS Zhuand Z GWang, Rapid thermal annealing properties of ZnO films grown using methanol asoxidant,J. Phys. D: Appl.Phys. 40 (2007) 6010–6013.
[45] Wei HY, Hu WG, Zhang PF, LiuXL,Zhu QS, Wang ZG, ZnOnanostructures grown on AlN/sapphire substrates by MOCVD,Chinese Physics Letters,24,1738(2007)
[46] Fan HB, Yang SY, Zhang PF,Wei HY, Liu XL, Jiao CM,Zhu QS, Chen YH，Wang ZG,Investigation of oxygen vacancy and interstitial oxygen defects in ZnO films byphotoluminescence and x-ray photoelectron spectroscopy,Chinese Physics Letters,24,2108-2111 (2007)
[47] Hu Wei-Guo, LIU Xiang-Lin,Zhang Pan-feng, Zhao Feng-Ai, Jiao Chun-Mei, Wei Hong-Yuan, Zhang Ri-Qing, WuJie-Jun, Cong Guang-Wei, Pan Yi, A comparison between AlN films grown by MOCVDusing Dimethylethylamine Alane and Trimethylaluminum as the aluminumprecursors,Chinese PhysicsLetters, 24,516 (2007 )
[48] Zhang Panfeng, Wei Hongyuan,Fan Haibo, Cong Guangwei, Yang Shaoyan，Zhu Qinsheng,Liu Xianglin, Effect of different facets of sapphire and oxidizers on thegrowth of ZnO films,ChineseJournal of Semiconductoes, 28 sup. (2007) 132
[49] Riqing Zhang, Yan Guo,Huaping Song, Xianglin Liu, Shaoyan Yang, Hongyuan Wei,QinshengZhu, Zhanguo Wang, Band alignment of InN/GaAs heterojunctiondetermined by x-ray photoelectron spectroscopy,Appl. Phys. Lett. 93122111 (2008)
[50] B. L. Zhang, F. F. Cai, G.S. Sun, H. B. Fan, P. F. Zhang, H. Y. Wei, X. L. Liu, S. Y. Yang,Q.S. Zhu, Z. G. Wang，Valence band offset of MgO/4H-SiCheterojunction measured by x-ray photoelectron spectroscopy，Appl.Phys. Lett. 93, 072110 (2008)
[51] H. B. Fan,G. S. Sun, S. Y.Yang,P. F. Zhang, R. Q. Zhang,H. Y. Wei, C. M. Jiao, X. L. Liu, Y. H. Chen,Q.S. Zhu, Z. G. Wang, Valence band offset of ZnO/4H-SiCheterojunction measured by x-ray photoelectron spectroscopy,Appl. Phys. Lett. 92,192107(2008)
[52] Xiaoqing Xu, Xianglin Liu,Xiuxun Han, Hairong Yuan, Jun Wang, Yan Guo, Huaping Song, Gaolin Zheng,Hongyuan Wei, Shaoyan Yang,Qinsheng Zhu, ZhanguoWang, Dislocation scattering in AlxGa1-xN/GaN heterostructures, Appl. Phys.Lett. 93, 182111 (2008)
[53] P. F. Zhang, X. L. Liu, R.Q. Zhang, H. B. Fan, H. P. Song, H. Y. Wei, C. M. Jiao, S. Y. Yang,Q.S. Zhu, Z. G. Wang, Valence band offset of MgO/InNheterojunction measured by x-ray photoelectron spectroscopy,Appl. Phys. Lett., 92,042906 (2008)
[54] P. F. Zhang, X. L. Liu, R.Q. Zhang, H. B. Fan, A. L. Yang, H. Y. Wei, P. Jin, S. Y. Yang,Q.S. Zhu, Z. G. Wang, Valence band offset of ZnO/GaAsheterojunction measured by x-ray photoelectron spectroscopy, Appl. Phys. Lett.92 012104 (2008)
[55] B. L. Zhang, G. S. Sun, Y.Guo, P. F. Zhang, R. Q. Zhang, H. B. Fan, X. L. Liu, S. Y. Yang,Q.S. Zhu,Z. G.Wang，Valenceband offset of InN/4H-SiC heterojunction measured by x-ray photoelectronspectroscopy，Appl.Phys. Lett. , 93, 242107（2008）
[56] Panfeng Zhang, Hongyuan Wei,Guangwei Cong, Weiguo Hu, Haibo Fan,JieJun Wu,Qinsheng Zhu, Xianglin Liu, Effects ofdisk rotation rate on the growth of ZnO films by low-pressure metal-organicchemical vapor deposition，ThinSolid Film, 516, 925 (2008)
[57] A L Yang, H Y Wei, X L Liu,H P Song, H B Fan, P F Zhang, G L Zheng, S Y Yang,Q S Zhu, Z G Wang，Characterizationof ZnMgO hexagonal-nanotowers/films on m-plane sapphire synthesized by metalorganic chemical vapour deposition，J. Phys. D: Appl. Phys., 41,205416（2008）
[58] Zhang Ri-Qing, LiuXiang-Lin, Kang Ting-Ting, Hu Wei-Guo, Yang Shao-Yan, Jiao Chun-Mei,ZhuQing-Sheng，Influenceof different interlayers on growth mode and properties of InN by MOVPE，ChinesePhysics Letters,25(1),pp 238-241, 2008
[59] Fan Hai-Bo, Yang Shao-Yan,Zhang Pan-Feng, Wei Hong-Yuan, Liu Xiang-Lin, Jiao Chun-Mei,ZhuQin-Sheng, Chen Yong-Hai, Wang Zhan-Guo，A simpleroute of morphology control and structural and optical properties of ZnO grownby metal-organic chemical vapour deposition，Chinese Physics Letters,25(8),pp 3063-3066, 2008
[60] Xiaoqing Xu, Xianglin Liu ,Shaoyan Yang , Jianming Liu , hongyuan wei ,Qinsheng Zhu, Zhanguo Wang, Dislocation coreeffect scattering in a quasi-triangle potential well,Appl. Phys. Lett.,94, 112102 (2009)
[61] A. L. Yang, H. P. Song, X.L. Liu, H. Y. Wei, Y. Guo, G. L. Zheng, C. M. Jiao,S. Y. Yang,Q.S. Zhu, Z. G. Wang, Determination of MgO/AlN heterojunctionband offsets by x-ray photoelectron spectroscopy,Appl. Phys. Lett.,94, 052101 (2009)
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[72] Gaolin Zheng, Anli Yang,Hongyuan Wei, Xianglin Liu, Huaping Song, Yan Guo, Caihong Jia, Chunmei Jiao,Shaoyan Yang,Qinsheng Zhu, ZhanguoWang, “Effects of annealing treatment on the formation of CO2 inZnO thin films grown bymetal-organic chemical vapor deposition”,AppliedSurface Science,256, 2606(2010).
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[77] Gaolin Zheng, Jun Wang,Xianglin Liu, Anli Yang, Huaping Song, Yan Guo, Hongyuan Wei, Chunmei Jiao,Shaoyan Yang,Qinsheng Zhu, ZhanguoWang, “Valence band offset of MgO/TiO2(rutile) heterojunction measured by x-rayphotoelectron spectroscopy”,AppliedSurface Science,256,7327(2010)
[78] WANG Zhen-Hua(王振華)， YANGAn-Li(楊安麗)， LIUXiang-Lin(劉祥林)，WEIHong-Yuan(魏鴻源)，JIAOChun-Mei(焦春美)，ZHUQin-Sheng(朱勤生)， YANG Shao-Yan(楊少延)， WANGZhan-Guo(王占國)，Temperaturedependence of structural and optical properties of ZnO films grown usingmethanol as oxidant by MOCVD，人工晶體學報，39（2010）34-38
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[80] Jianming Liu, Xianglin Liu,ChengmingLi, Hongyuan Wei,Yan Guo,Chunmei Jiao,Zhiwei Li,Xiaoqing Xu,HuapingSong,Shaoyan Yang,QinshengZhu,Zhanguo Wang,Anli Yang,Tieying Yang, Huanhua Wang,Investigation of cracks in GaN films grown by combined hydride and metalorganic vapor-phase epitaxial method’,NanoscaleResearch Letters,6,69(2011)
[81] K Shi, AL Yang,J Wang,HPSong,XQ Xu,L Sang, HY Wei, SY Yang,XL Liu,QS Zhu,ZG Wang, The effect of differentoriented sapphire substrates on the growth of polar and non-polar ZnMgO byMOCVD,J.Cryst.Growth, 39,314(2011)
[82] Liu, G. Wu, J. Lu, Y. Zhang,B. Li, C. Sang, L. Song, Y. Shi, K. Liu, X. Yang,Q.S.Zhu, Wang, Z.，Atheoretical calculation of the impact of GaN cap and AlxGa1-xNbarrier thickness fluctuations on two-dimensional electron gas inGaN/AlxGa1-xN/GaN heterostructure，IEEE Transactions on ElectronDevices, 58(12), 4272( 2011)
[83] Guipeng Liu,Ju Wu,Yanwu Lu,ZhiweiLi,Yafeng Song, Chengming Li,Shaoyan Yang,Xianglin Liu,Qinsheng Zhu, ZhanguoWang, Scattering due to spacer layer thickness fluctuation on two dimensionalelectron gas in AlGaAs/GaAs modulation-doped heterostructures ,J. Appl.Phys.,110,023705( 2011)
[84] BiaoZhang, HuapingSong,JunWang, CaihongJia, JianmingLiu, Xiaoqing Xu, XianglinLiu, ShaoyanYang,QinshengZhu,ZhanguoWang, MOCVD growth of a-planeInNfilmson r-Al2O3 with different buffer layers,J.Cryst. Growth, 319, 114 (2011)
[85] Biao Zhang, Huaping Song,Xiaoqing Xu, Jianming Liu, Jun Wang, Xianglin Liu, Shaoyan Yang,QinshengZhu, Zhanguo Wang, Well-aligned Zn-doped tilted InN nanorodsgrown on r-plane sapphire by MOCVD,Nanotechnology,22, 235603 (2011)
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[87] K Shi,XL Liu,DB Li, J Wang,HP Song,XQ Xu,HY Wei,CM Jiao,SY Yang,H Song,QS Zhu,ZG Wang,Valence band offset ofGaN/diamond heterojunction measured by X-ray photoelectron spectroscopy,Applied Surface Science,257,8110(2011)
[88] Zhiwei Li, Biao Zhang, JunWang, Jianming Liu, Xianglin Liu, Shaoyan Yang,QinshengZhu, Zhanguo Wang, Valence band offset of wurtzite InN/SrTiO(3)heterojunction measured by x-ray photoelectron spectroscopy,Nanoscale Research Letters,6,193 (2011)
[89] K Shi, DB Li, HP Song,YGuo,J Wang, XQ Xu, JM Liu, AL Yang, HY Wei, B Zhang, SY Yang, XL Liu,QSZhu, ZG Wang, Determination of InN/Diamond Heterojunction BandOffset by X-ray Photoelectron Spectroscopy,NanoscaleResearch Letters,6,50 (2011)
[90] K. Shi, P. F. Zhang, H. Y.Wei, C. M. Jiao, P. Jin, X. L. Liu, S. Y. Yang,Q.S. Zhu, Z. G. Wang,Thermal diffusion of nitrogen into ZnO filmdeposited on InN/sapphire substrate by metal organic chemical vapor deposition,J.Appl. Phys. 110, 113509 (2011)
[91]Shi, K;Zhang, PF; Wei, HY;Jiao, CM;Li, CM;Liu, XL;Yang, SY;Zhu, QS;Wang, ZG,Energy band alignment of MgO(111)/ZnO (0002) heterojunction determined by X-ray photoelectron spectroscopy,Solid State Commuincations,152,938(2012)
[92] Zhiwei Li，hongyuanWei, Xiaoqing Xu, Guijuan Zhao, Xianglin Liu, Shaoyan Yang,QinshengZhu, Zhanguo Wang, Growth of a-plane GaN on r-plane sapphire byself-patterned nanoscale epitaxial lateral overgrowth,J. Cryst. Growth, 34810-14(2012)
[93] Song Ya-Feng,Lu Yan-Wu;WenWei; Liu Xiang-Lin; Yang Shao-Yan,Zhu Qin-Sheng,Wang Zhan-Guo, Plasmons in a free-standingnanorod with a two-dimensional parabolic quantum well caused by surface states,Chin. Phys. B,057302 (2012)
[94] Guipeng Liu, Ju Wu1, YanwuLu, Guijuan Zhao, Chengyan Gu, Changbo Liu, Ling Sang, Shaoyan Yang, XianglinLiu,Qinsheng Zhu, andZhanguo Wang,Two-dimensional electron gas mobility limited by barrier and quantumwell thickness fluctuations scattering in AlxGa1-xN/GaN multi-quantum wells,Appl. Phys. Lett.,100,162102 (2012);
[95] Guipeng Liu, Ju Wu, GuijuanZhao, Shuman Liu, Wei Mao, Yue Hao, Changbo Liu, Shaoyan Yang, Xianglin Liu,QinshengZhu, and Zhanguo Wang, Impact of the misfit dislocations ontwo-dimensional electron gas mobility in semi-polar AlGaN/GaN heterostructures,Appl. Phys. Lett.,100, 082101 (2012)
[96] Sang Ling;Liu Jian-Ming; XuXiao-Qing;Wang Jun; Zhao Gui-Juan;Liu Chang-Bo; Gu Cheng-Yan; Liu Gui-Peng; WeiHong-Yuan; Liu Xiang-Lin; Yang Shao-Yan;Zhu Qin-Sheng; WangZhan-Guo, Morphological Evolution of a-GaN on r-Sapphire by MetalorganicChemical Vapor Deposition,Chin.Phys, Lett., 29,026801 (2012)
[97] SANG Ling, WANG Jun, SHIKai, WEI Hong-Yuan, JIAO Chun-Mei, LIU Xiang-Lin, YANG Shao-Yan,ZHUQin-Sheng, WANG Zhan-Guo,The Growth of Semi-Polar ZnO(10(1)over-bar1) on Si (111) Substrates Using a Methanol Oxidant byMetalorganic Chemical Vapor Deposition,Chin.Phys, Lett., 29(018101)2012
[98] Gu Cheng-Yan, Liu Gui-Peng,Shi Kai, Song Ya-Feng, Li Cheng-Ming,, Liu Xiang-Lin, Yang Shao-Yan,ZhuQin-Sheng,WangZhan-Guo,Spacer layer thickness fluctuation scattering in a modulation-dopedAl(x)Ga(1-x)As /GaAs/ Al(x)Ga(1-x)As quantum well,Chin. Phys. B,2,107305 (2012)
[99] Zhao Guijuan,Li zhiwei, WeiHongyuan, Liu Guipeng, Liu Xianglin, Yang Shaoyan,ZhuQinsheng, Wang Zhanguo，Growth and characterization of an a-planeInxGa1-xN on a r-plane sapphire，Chin.Phys, lett.,29(117103)2012
[100]Li, Huijie;Liu, Xianglin;Wang, Jianxia;Jin, Dongdong;Zhang, Heng;Yang, Shaoyan;Liu, Shuman;Mao, Wei;Hao, Yue;Zhu, Qinsheng;Wang, Zhanguo，Calculation of discrepancies in measuredvalence band offsets of heterojunctions with different crystal polarities，J. Appl.Phys., 112（113712）2012
[101] Bing Liu, Yanwu Lu, YanHuang, Guipeng Liu,Qinsheng Zhu, andZhanguo Wang, “Interfacial misfit dislocation scattering effect intwo-dimensional electron gas channel of GaN heterojunction”,Physics Letters A, 376, 1067 (2012).
[102] Dong Ji, Bing Liu, YanwuLu, Guipeng Liu,Qinsheng Zhu, andZhanguo Wang, “Polarization-induced remote interfacial charge scattering inAl2O3/AlGaN/GaN double heterojunction high electron mobility transistors”,Appl. Phys. Lett. ,100, 132105 (2012)
[103] Dong Ji, Yanwu Lu, BingLiu, Guipeng Liu,Qinsheng Zhu, Zhanguo Wang, Theoreticalcalculation of the interfacial charge-modulated two-dimensional electron gasmobility in Al2O3/AlGaN/GaN double heterojunction high electron mobilitytransistors,Solid StateCommuincations,153, 53,(2012)
[104] Dong Ji, Yanwu Lu, BingLiu, Guangri Jin, Guipeng Liu,Qinsheng Zhu, ZhanguoWang, Electric field-induced scatterings in rough quantum wells of AlGaN/GaNhigh-mobility electronic transistors,J.Appl. Phys.,112, 024515(2012)
[105] Changbo Liu, Guijuan Zhao,Guipeng Liu, Yafeng Song, Heng Zhang, Dongdong Jin, Zhiwei Li, Xianglin Liu,Shaoyan Yang,Qinsheng Zhu, ZhanguoWang, Scattering due to large cluster embedded in quantum wells,Appl. Phys. Lett.102, 052105 (2013)
[106] Huijie Li, Guipeng Liu,Hongyuan Wei, Chunmei Jiao, Jianxia Wang, Heng Zhang, Dong Dong Jin, YuxiaFeng, Shaoyan Yang, Lianshan Wang,Qinsheng Zhu, Zhan-GuoWang，Scatteringdue to Schottky barrier height spatial fluctuation on two dimensional electrongas in AlGaN/GaN high electron mobility transistors，Appl.Phys. Lett.103,232109 (2013)
[107] Dong-Dong Jin, Chao Jiang,Guo-Dong Li, Liu-Wan Zhang, Tao Yang, Xiang-Lin Liu, Shao-Yan Yang,Qin-ShengZhu, Zhan-Guo Wang, Scattering due to anisotropy of ellipsoidquantum dots in GaAs/InGaAs single quantum well,J. Appl. Phys., 113, 033701(2013)
[108] Dong-Dong Jin, Shao-YanYang, Liu-Wan Zhang, Hui-jie Li, Heng Zhang, Jian-xia Wang, Tao Yang,Xiang-LinLiu,Qin-Sheng Zhu,Zhan-Guo Wang,Electron scattering in GaAs/InGaAs quantum wells subjected to anin-plane magnetic field,J.Appl. Phys., 113, 213711 (2013)
[109] Ling Sang, Shao Yan Yang,Gui Peng Liu, Gui Juan Zhao, Chang Bo Liu, Cheng Yan Gu, Hong Yuan Wei,XiangLin Liu,Qin Sheng Zhu, ZhanGuo Wang, Dislocation Scattering in ZnMgO/ZnO Heterostructures ,IEEE Transactions on ElectronDevices,60(6),2077-2079(2013)
[110] Changbo Liu, Shaoyan Yang*,Kai Shi, Guipeng Liu, Heng Zhang, Dongdong Jin, Chengyan Gu, Guijuan Zhao, LingSang, Xianglin Liu,Qinsheng Zhu, ZhanguoWang, Two dimensional electron gas mobility limited by scattering of quantumdots with indium composition transition region in quantum wells,Physica E:Low-dimensional Systems andNanostructures, 52，150-154（2013）
[111] Huijie Li, Xianglin Liu,Ling Sang, Jianxia Wang, Dongdong Jin, Heng Zhang, Shaoyan Yang, Shuman Liu,Wei Mao, Yue Hao,Qinsheng Zhu, ZhanguoWang, Determination of polar C-plane and nonpolar A-plane AlN/GaNheterojunction band offsets by X-ray photoelectron spectroscopy,Phys. Status Solidi B, 1–4(2013) / DOI 10.1002/pssb.201350199
[112] ZHAO Gui-Juan(趙桂娟)，YANGShao-Yan(楊少延)，LIUGui-Peng(劉貴鵬)，LIUChang-Bo (劉長波)，SANG Ling(桑玲)，GUCheng-Yan(谷承艷)，LIUXiang-Lin(劉祥林)，WEIHong-Yuan(魏鴻源)，ZHUQin-Sheng(朱勤生)，WANGZhan-Guo(王占國)， StrainDistributions in Non-Polar a-Plane InxGa1-xN Epitaxial Layers on r-PlaneSapphire Extracted from X-Ray Diffraction，CHIN. PHYS. LETT.，Vol. 30,No. 9 (2013) 098102
[113] Wang Jian-Xia(王建霞), YangShao-Yan(楊少延),Wang Jun(王俊),Liu Gui-Peng(劉貴鵬),Li Zhi-Wei(李志偉),Li Hui-Jie(李輝傑),Jin Dong-Dong(金東東),Liu Xiang-Lin(劉祥林),ZhuQin-Sheng(朱勤生),and Wang Zhan-Guo(王占國),Electron mobility limited by surface and interface roughness scattering inAlxGa1-xN/GaN quantum wells,Chin.Phys. B, 22( 7) ,077305(2013)
[114] Zhang Heng(張恆), YangShao-Yan(楊少延),Liu Gui-Peng(劉貴鵬),Wang Jian-Xia(王建霞),Jin Dong-Dong(金東東),Li Hui-Jie(李輝傑),Liu Xiang-Lin(劉祥林),ZhuQin-Sheng(朱勤生),and Wang Zhan-Guo(王占國)，Mobilitylimited by cluster scattering in ternary alloy quantum wires，Chin.Phys. B，23,017305(2014)
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二、授權發明專利（5項）
1、 張志成，楊少延，黎大兵，陳涌海，朱勤生，王占國，發明專利：製備低溫超薄異質外延用柔性襯底的方法，專利號：ZL02142452.7，申請日期: 2002.9.19, 授權公告日期：2005.8. 24。
2、 張志成，楊少延，黎大兵，劉祥林，陳涌海，朱勤生，王占國，發明專利：一種氫致解耦合的異質外延用柔性襯底，專利號：ZL03155388.5，申請日期：2003.08.28，授權公告日：2007.10.24
2. 鄭高林;楊安麗;宋華平;郭嚴;魏鴻源;劉祥林;朱勤生;楊少延;王占國 ，發明專利：利用非極性ZnO緩衝層生長非極性InN薄膜的方法 ，專利號201010157517.3，申請日：2010.04.21，授權日：2011.10.19
3. 郭嚴，宋華平，鄭高林，魏鴻源，劉祥林，朱勤生，楊少延，王占國，發明專利：一種生長高質量富In組分InGaN薄膜材料的方法，專利號：201010157637.3，申請日：2010.4.21，授權日：2011.10.5
4. 時凱，劉祥林，魏鴻源，焦春美，王俊，李志偉，宋亞峰，楊少延，朱勤生，王占國,發明專利：利用溫度周期調製生長氧化鋅材料的方法，專利號：ZL.201110113282.2，申請日：2011.5.4，授權日：2012.7.4
5. 桑玲，王俊，魏鴻源，焦春美，劉祥林，朱勤生，楊少延，王占國，發明專利：一種非極性藍寶石襯底上生長水平排列氧化鋅納米線的方法，專利號：ZL 201110119981.8，申請日：2011.5.10，授權日：2012.11.21
悼詞
北京詩詞協會王綿和先生沉痛悼念朱勤生先生特贈輓詩一首：
京城天地動哀情，
親友賓朋灑淚行。
希望之星今隕落，
導師功績史留名。
朱君遺憾歸西去，
旖旎光輝耀眼明。
勤生敬業精神在，
激勵他人大器成。
生前同事敬贈輓聯一副：
桃李凝霜悼良工 風澤雨露
杜鵑啼血念春心 山高水長
杜鵑啼血念春心 山高水長
學生敬贈輓詞一首：
清平樂-——紀念朱勤生老師
慈愛人生，
滿紙教誨諄諄。
昔日音容憶猶在，
桌前不見舊人。
名利如幻如塵，
只為探知育人。
英魂獨默悲苦，
遍種桃李滿春。
