基本介紹
- 中文名：成步文
- 國籍：中國
- 民族：漢族
- 畢業院校：北京師範大學物理系
人物簡介,研究領域,主要項目,主要論文,
人物簡介
成步文，1992年入中國科學院半導體研究所工作。他多年來一直致力於矽基光電子材料和器件的研究。近年先後主持完成了多項重要研究課題，取得的主要成果包括：主持研製出用於矽基異質材料生長的超高真空化學汽相澱積（UHV/CVD）系統，利用該設備系統研究了矽基Ⅳ族異質材料的生長機理和生長工藝，深入研究了自組裝Ge量子點的動力學過程、形態演化規律及能帶結構和光躍遷過程，研究了Si襯底上Ge材料生長的應變弛豫機理和控制，製備出了SiGe/Si量子阱材料、自組裝Ge量子點、SiGe/Si HBT材料、SiGe/Si光電晶體材料、Si襯底上弛豫的厚Ge材料等；利用生長的材料研製出SiGe共振腔光電探測器、Ge量子點共振腔光電探測器、Si基Ge長波長光電探測器及陣列、矽基Ge發光二極體、SiGe/Si高速HBT等器件；在國內率先開展矽基GeSn材料外延和器件研究，研製的GeSn光電探測器性能處於國際領先水平。在國內外重要期刊和會議上發表論文150餘篇，獲得國家發明專利11項。將招收矽基光電子異質結構材料生長和器件研究方向的碩士生和博士生。
研究領域
矽基光電子異質結構材料生長和器件研製
主要項目
1. 矽基高速光接收機集成晶片基礎研究，重點基金
2. 矽基鍺錫合金材料外延生長機理研究，面上基金
3. 矽基鍺材料外延及其相關器件基礎研究，重點基金
4. 矽基集成100Gb/s相干接收和傳輸晶片技術，863課題
5. 基於能帶工程的矽基發光材料及光電子原型器件，973課題
6. Si襯底上的高速Ge光電探測器集成技術，863課題
7. 絕緣層上SiGe材料的製備及弛豫機理研究，面上基金
8. Si基光電子學關鍵器件基礎研究，重點基金
9. Ge量子點子帶間躍遷光探測器的探索， XX基金
10. SiGe/Si單片集成高速OEIC光接收晶片的研究，863課題
11. GeSi/Si MQW波長可調光電探測器，863課題
主要論文
1. Zhi Liu, Yaming Li, Chao He, Chuanbo Li, Chunlai Xue, Yuhua Zuo, Buwen Cheng*, and Qiming Wang, Direct-bandgap electroluminescence from a horizontal Ge p-i-n ridge waveguide on Si(001) substrate
2. Xu Zhang, Dongliang Zhang, Buwen Cheng*, Zhi Liu, Guangze Zhang, Chunlai Xue, and Qiming Wang，Crystal Quality Improvement of GeSn Alloys by Thermal Annealing
3. J. J. Wen, Z. Liu, D. L. Zhang, T. W. Zhou, C. L. Xue, Y. H. Zuo, C. B. Li, Q. M. Wang, and B. W. Cheng*，Effects of rapid thermal process temperatures on strain and Si concentration distributions in Ge-on-insulator structures formed by rapid melt growth
4. Yaming Li, Chong Li, Chuanbo Li, Buwen Cheng*, and Chunlai Xue，Compact two-mode (de)multiplexer based on symmetric Y-junction and Multimode interference waveguides
5. Wenqi Huang, Buwen Cheng*, Chunlai Xue, Chuanbo Li, Comparative studies of clustering effect, electronic and optical properties for GePb and GeSn alloys with low Pb and Sn concentration
6. Leliang Li, JunZheng, Yuhua Zuo, Buwen Cheng, QimingWang , Structural and optical properties of (Sr,Ba)2SiO4:Eu2+ thin films grown by magnetron sputtering，Journal of Luminescence
7. Ym Li,BW Cheng*, Design of electro-absorption modulator with tapered-mode coupler on the GeSi layer
8. Shaojian Su, Dongliang Zhang, Guangze Zhang, Chunlai Xue, Buwen Cheng*, Growth of Ge1-xSnx/Ge strained-layer superlattices on Si(100) by molecular beam epitaxy
9. J. J.Wen, Z. Liu, L. L. Li, C. Li, C. L. Xue, Y. H. Zuo, C. B. Li, Q. M.Wang, and B.W. Cheng*, Cooling Rate Dependent Lattice Rotation in Ge on Insulators Formed by Rapid Melt Growth
10. Zhi Liu, Tianwei Zhou, Leliang Li, Yuhua Zuo, Chao He, Chuanbo Li, Chunlai Xue, Buwen Cheng*, and Qiming Wang, Ge/Si quantum dots thin film solar cells
11. Dongliang Zhang, Chunlai Xue, Buwen Cheng, Shaojian Su, Zhi Liu, Xu Zhang,Guangze Zhang, Chuanbo Li, and Qiming Wang, High-responsivity GeSn short-wave infrared p-i-n photodetectors
12. Juanjuan Wen, Zhi Liu, Leliang Li, Chong Li, Chunlai Xue, Yuhua Zuo, Chuanbo Li, Qiming Wang, and Buwen Cheng*, Room temperature photoluminescence of Ge-on-insulator structures formed by rapid melt growth, J
13. Chong Li, Chunlai Xue, Zhi Liu, Buwen Cheng, Chuanbo Li, and Qiming Wang, High-Bandwidth and High-Responsivity Top-Illuminated Germanium Photodiodes for Optical Interconnection
14. Zhi Liu, Weixuan Hu, Chong Li, Yaming Li, Chunlai Xue, Chuanbo Li, Yuhua Zuo, Buwen Cheng*, and Qiming Wang, Room temperature direct-bandgap electroluminescence from n-type strain-compensated Ge/SiGe multiple quantum wells
15. Zhi Liu, Buwen Cheng*, Weixuan Hu, Shaojian Su, Chuanbo Li and Qiming Wang, Enhanced photoluminescence of multilayer Ge quantum dots on Si(001) substrates by increased overgrowth temperature
16. Zhi Liu, Weixuan Hu, Shaojian Su, Chong Li, Chuanbo Li, Chunlai Xue, Yaming Li, Yuhua Zuo, Buwen Cheng*, and Qiming Wang, Enhanced photoluminescence and electroluminescence of multilayer GeSi islands on Si(001) substrates by phosphorus-doping
17. Shaojian Su, Buwen Cheng, Chunlai Xue, Wei Wang, Quan Cao, Haiyun Xue, Weixuan Hu, Guangze Zhang, Yuhua Zuo, and Qiming Wang，GeSn p-i-n photodetector for all telecommunication bands detection
18. S.J. Su, W. Wang, B.W. Cheng*, W.X. Hu, G.Z. Zhang, C.L. Xue, Y.H. Zuo, and Q.M. Wang, “The contributions of composition and strain to the phonon shift in Ge1-xSnx alloys”
19. W. Wang, S.J. Su, J. Zheng, G.Z. Zhang, C.L. Xue, Y.H. Zuo, B.W. Cheng*, and Q.M. Wang, “Flattening of low temperature epitaxial Ge1-xSnx/Ge/Si(100) alloys via mass transport during post-growth annealing”
20. S.J. Su, W. Wang, B.W. Cheng*, G.Z. Zhang, W.X. Hu, C.L. Xue, Y.H. Zuo, and Q.M. Wang, “Epitaxial growth and thermal stability of Ge1-xSnx alloys on Ge-buffered Si(001) substrates”
21. Hai-Yun Xue, Chun-Lai Xue, Bu-Wen Cheng*, Yu-De Yu,and Qi-Ming Wang，High Saturation Power and High Speed Ge-on-SOI PIN Photodetectors
22. Anqi Bai, Buwen Cheng*, Xiaofeng Wang, Chunlai Xue, Yuhua Zuo, and Qiming Wang, Fabrication of Silicon-Based Template-Assisted Nanoelectrode Arrays and Ohmic Contact
