徐開凱，男，電子科技大學教授，電子薄膜與集成器件國家重點實驗室（電子科技大學）成員。
基本介紹
- 中文名：徐開凱
- 國籍：中國
- 民族：漢
- 畢業院校：加州大學歐文分校
- 學位/學歷：博士
- 職業：教師
- 專業方向：微電子學與固體電子學
- 職稱：教授
人物簡介,研究成果,研究領域,研究亮點,獎勵,代表性成果,教育經歷,工作經歷,社會兼職,主持項目,
人物簡介
徐開凱，2014年6月美國加州大學歐文分校（UCI）博士畢業，回國入職電子科技大學，任電子科學與工程學院博士生導師、電子薄膜與集成器件國家重點實驗室研究員；入選第五批國家高層次人才特殊支持計畫（青年拔尖），牽頭獲批國家重點研發計畫政府間創新合作重點專項項目（執行期2020-2022年）；2014年、2017年、2019年分別入選四川省青年特聘專家、四川省傑出青年科技人才；獲中國電子學會優秀科技工作者稱號（2020年）、中國儀器儀表學會“朱良漪青年創新獎”（2020年）、四川省科技進步獎1項（2018年）。擔任IEEE納米技術協會（Nanotechnology Council）光電技術委員會主席，IEEE電子器件學會（Electron Devices Society）光電子器件委員會委員等學術兼職；是美國-以色列雙邊政府間科學合作基金、阿聯（United Arab Emirates）Sandooq Al Watan 基金、荷蘭-印度雙邊政府間NWO-WOTRO基金、國家自然科學基金、國家留學基金委、教育部“青年長江”、北京市自然科學基金、四川省，重慶市科技計畫等項目的評審專家。
研究成果
研究領域
微電子學與固體電子學、半導體光電
研究亮點
主持國家重點研發國際合作專項1項、國家自然科學基金項目3項、JW科技委前沿創新專題2項。第一作者發表SCI論文30餘篇（其中3篇為ESI熱點論文、另2篇為ESI高被引論文）、獲授權專利10餘項。其研究的全矽發光器件被Wiley期刊PSSA選為封面，迅速由Advanced Science News以Press Release發布。研究成果被美國、歐洲、中國的院士專家學者，以及台積電（TSMC）、荷蘭恩智浦 (NXP)、美國Thorlabs等科技公司予以積極評價、引用、套用；被Compound Semiconductor等國際知名半導體產業雜誌、科技日報予以專題報導。
獎勵
主持完成的“矽基發光陣列與智慧型光控積體電路的研究”成果獲2019年第三屆四川電子科學技術獎二等獎（排名第一）、榮獲2019年英國物理學會（IOP）中國高被引作者獎（個人）、入選美國套用物理期刊（JAP）早期職業生涯（Early Career）青年編委會；以及，“高可靠恆流驅動與保護系列功率積體電路的關鍵技術開發及套用”成果獲2018年四川省科技進步三等獎（排名第三）。
代表性成果
在單片集成矽光源套用於感測監測方面，作為項目負責人獲批國家重點研發計畫，與南非共和國-南非大學開展技術合作，實現了發光器件與矽基光波導集成，可以套用於生物感測技術。
教育經歷
2002/09/01-2006/07/01
電子科技大學 | 通信工程 | 工學學士學位 | 大學本科畢業
2006/08/01-2009/05/01
加州州立大學富爾頓分校 | 電子工程 | 工學碩士學位 | 碩士研究生畢業
2009/09/01-2014/06/01
加利福尼亞大學爾灣分校 | 電子工程 | 工學博士學位 | 博士研究生畢業
工作經歷
2021/1/01-至今
電子科技大學電子科學與技術學院（示範性微電子學院） | 教授
2017/12/01-2020/12/01
電子科技大學電子科學與技術學院（示範性微電子學院） | 副教授
2014/09/01-2017/11/01
電子科技大學微電子與固體電子學院 | 副教授
社會兼職
2020/09/01-2023/09/01
Chinese Physics Letters (CPL)、Chinese Physics B (CPB)、《物理學報》和《物理》四刊聯合青年編輯委員會
2017/01/01-至今
國際電氣電子工程師協會 通信學會量子通信與信息技術委員會 成員(Member of the IEEE Communications Society Quantum Communications and Information Technologies Technical Committee)
2016/01/01-至今
國際電氣電子工程師協會 納米技術委員會納光學、納光子學、納光電子學委員會 主席(Chair of the IEEE Nanotechnology Council Nano-Optics, Nano-Photonics, and Nano-Optoelectronics Committee)
2016/01/01-2018/12/01
美國光學學會 光子學與光電子學學部雷射系統專委會 副主席(Vice Co-chair, the OSA Photonics and Opto-Electronics Division, Laser Systems Group)
2016/01/01-至今
北美發光工程學會光源委員會成員(Member of the Illuminating Engineering Society of North America, Light Sources Committee)
2016/01/01-2018/12/01
國際電氣電子工程師協會 電子器件學會光電子器件委員會 成員(Member of the IEEE Electron Devices Society Optoelectronic Devices Committee)
主持項目
★國家自然科學基金，基於場致光發射機理的MOS柵控高效矽發光新結構研究，主持；
★四川省套用基礎研究計畫，直接驅動大功率IGBT的單光纖供電與信號傳輸電路研究，主持；
★新型微納器件與系統技術重點學科實驗室開放課題基金，微型光機電矽發光感測器件的研究，主持；
★電子薄膜與集成器件國家重點實驗室開放課題，新型矽器件電光特性的研究，主持；
★教育部留學回國人員啟動基金，標準CMOS工藝兼容的多功能矽光源II，主持；
★中央高校基本業務費，標準CMOS工藝兼容的多功能矽光源I，主持；
各研究領域代表性論文 (*表示通訊作者)
Journal Articles
[1] K. Xu* and G. Li, “A three terminal silicon-PMOSFET like light emitting device (LED) for optical intensity modulation,” IEEE Photonics Journal, vol. 4, no. 6, pp. 2159-2168, 2012
[2] K. Xu* and G. Li, “A novel way to improve the quantum efficiency of silicon light emitting diode in a standard silicon complementary metal-oxide-semiconductor technology,” Journal of Applied Physics, 113, 10, 103106, 2013
[3] K. Xu* and G. Li, “Hot-carrier induced photon-emission in silicon metal-oxide-semiconductor field-effect-transistor,” Journal of Physics: Conference Series, 488, 132036, 2014
XXVIII International Conference on Photonic, Electronic and Atomic Collisions (ICPEAC 2013)
[4] K. Xu*, “Current-voltage characteristics and increase in the quantum efficiency of three-terminal gate and avalanche-based silicon LEDs,” Applied Optics, vol. 52, iss. 27, pp. 6669-6675, 2013
[5] K. Xu* and G. Li, “Light-emitting device with monolithic integration on bulk silicon in standard complementary metal oxide semiconductor technology,” Journal of Nanophotonics, vol. 7, no. 1, 073082, 2013
[6] K. Xu*, “On the design and optimization of three-terminal light-emitting device in silicon CMOS technology,” IEEE Journal of Selected Topics in Quantum Electronics, vol. 20, no. 4, 8201208, July/Aug. 2014
[7] K. Xu* et al., “Electro-optical modulation processes in Si-PMOSFET LEDs operating in the avalanche light emission mode,” IEEE Transactions on Electron Devices, vol. 61, no. 6, pp. 2085-2092, 2014
Emission Efficiency Enhancement
[8] L. Snyman, K. Xu, J. Polleux, K. Ogudo, and C. Viana, “Higher intensity SiAvLEDs in a RF bipolar process through carrier energy and carrier momentum engineering,” IEEE Journal of Quantum Electronics, vol. 51, no. 7, 3200110, July 2015 (2016 SCI IF: 1.843)
[9] K. Xu*, Q. Yu, and G. Li, “Increased efficiency of silicon light-emitting device in standard Si-CMOS technology,” IEEE Journal of Quantum Electronics, vol. 51, no. 8, 3000106, August 2015 (2016 SCI IF: 1.843)
[10] K. Xu*, K. Ogudo, J. Polleux, C. Viana, Z. Ma. Z. Li, Q. Yu, G. Li, and L. Snyman, “Light-emitting devices in Si CMOS and RF bipolar integrated circuits,” LEUKOS, the journal of the Illuminating Engineering Society, vol. 12, no. 4, pp. 203-212, 2016 (2016 SCI IF: 2.167)
Electro-optic Modulation & Microdisplay
[11] K. Xu*, H. Liu, and Z. Zhang, “Gate-controlled diode structure based electro-optical interfaces in standard Silicon-CMOS integrated circuitry,” Applied Optics, vol. 54, iss. 21, pp. 6420-6424, 2015 (2016 SCI IF: 1.598)
[12] K. Xu*, H. Liu, Q. Yu, Z. Wen, and G. Li, “On the electrical and optical characteristics of reverse-biased silicon p-n junctions embedded in a metal-oxide-semiconductor field-effect-transistor device,” Journal of Optoelectronics and Advanced Materials, vol. 17, no. 11-12, pp. 1680-1688, 2015
[13] K. Xu*, Z. Zhang, Q. Yu, and Z. Wen, “Field-effect electroluminescence spectra of reverse-biased PN Junctions in silicon device for microdisplay,” IEEE/OSA Journal of Display Technology, vol. 12, no. 2, pp. 115-121, 2016 (2016 SCI IF: 1.925)
Optical Switch in Si Photonics
[14] K. Xu*, S. Liu, J. Zhao, W. Sun, and G. Li, “Analysis of simulation of multi-terminal electro-optic modulator based on p-n junction in reverse bias,” Optical Engineering, vol. 54, no. 5, 057104, 2015
[15] K. Xu*, S. Liu, J. Zhao, Q. Yu, W. Sun, and G. Li, “Opportunities for employing IGBT in photo-switch based on silicon avalanche LEDs,” International Journal of New Computer Architectures and their Applications, vol. 5, no. 3, pp. 119-126, 2015
[16] K. Xu*, S. Liu, J. Zhao, W. Sun, and G. Li, “A new silicon LED concept for future opto-coupler system applications in short-distance,” Optik-International Journal for Light and Electron Optics, vol. 127, no. 5, pp. 2895-2897, 2016
[17] K. Xu*, S. Liu, W. Sun, Z. Ma, Z. Li, Q. Yu, and G. Li, “Design and fabrication of a monolithic optoelectronic integrated Si CMOS LED based on hot-carrier effect,” IEEE Journal of Selected Topics in Quantum Electronics, vol. 22, no. 6, 2000508, November/December 2016 (2016 SCI IF: 3.466)
[18] K. Xu*, “Integrated silicon directly modulated light source using P-Well in standard CMOS technology,” IEEE Sensors Journal, vol. 16, no. 16, pp. 6184-6191, 2016 (2016 SCI IF: 1.889)
Photonics ADC in Si Photonics
[19] K. Xu*, Z. Zhang, and Z. Zhang, “Structural and optical properties of silicon metal-oxide-semiconductor light-emitting devices,” Journal of Nanophotonics, vol. 10, no. 1, 016002, Jan-Mar 2016 (2016 SCI IF: 1.488)
[20] Z. Zhang, K. Xu*, J. Yuan, Y. Wang, K. Ogudo, C. Viana, J. Polleux, Q. Yu, L. Snyman, Y. Wang, and R. Hu, “Silicon light-emitting device for high speed analog-to-digital conversion,” Journal of Optoelectronics and Advanced Materials, (Accepted, in press)
MEMS & MOEMS in Si Photonics
[21] K. Xu*, L. Snyman, J. Polleux, H. Chen, and G. Li, “Silicon light-emitting device with application in on-chip micro-opto-electro-mechanical and chemical-opto-electro micro systems,” International Journal of Materials, Mechanics and Manufacturing, vol. 3, no. 4, pp. 282-286, 2015
[22] K. Xu*, L. Snyman, J. Polleux, K. Ogudo, C. Viana, Q. Yu, and G. Li, “Silicon LEDs toward high frequency on-chip link,” Optik-International Journal for Light and Electron Optics, vol. 127, no. 17, pp. 7002-7020, 2016
Optical Communication System
[23] K. Xu* and Yang Ou, “Theoretical and numerical characterization of a 40Gbps long-haul multi-channel transmission system with dispersion compensation,” Digital Communications and Networks, vol. 1, iss. 3, pp. 222-228, 2015
[24] K. Xu*, D. Cheng, and X. Huang, “Modal characteristics of coupled resonator vertical cavity laser diode,” Photonics and Optoelectronics, (Accept, in press)
Device Reliability
[25] C. Zhang, S. Liu, K. Xu, J. Wei, R. Ye, W. Sun*, W. Su, A. Zhang, S. Ma, F. Lin, and G. Sun, “A novel high latch-up immunity electrostatic discharge protection device for power rail in high-voltage ICs,” IEEE Transactions on Device and Materials Reliability, vol. 16, no. 2, pp. 266-268, 2016
[25] C. Zhang, S. Liu, K. Xu, J. Wei, R. Ye, W. Sun*, W. Su, A. Zhang, S. Ma, F. Lin, and G. Sun, “A novel high latch-up immunity electrostatic discharge protection device for power rail in high-voltage ICs,” IEEE Transactions on Device and Materials Reliability, vol. 16, no. 2, pp. 266-268, 2016
Conference Papers
[1] K. Xu, D. Cheng, and K. Li, “Super-high speed fiber optical communication systems design and simulation,” ICAIT 2008
[2] K. Xu, D. Cheng, and X. Huang, “Multimode communication system used in local area network,” SOPO 2009
[3] X. Huang, L. Li, K. Xu et al., “An 0.35μm/CMOS 2.4Gb/s LVDS for high-speed DAC,” IEEE ASICON 2009
[4] K. Xu and D. Cheng, “Modeling and analysis of check-in procedure by simulation,” IEEE SMC 2011
[5] K. Xu, “Comparison of dispersion compensation in a 40Gbps WDM optical communication system,” SPIE Photonics Asia 2010 Invited paper
[6] K. Xu and G. Li, “A light-emitting-device (LED) with monolithic integration on bulk silicon in a standard CMOS technology,” in International Photonics and Optoelectronics Meetings (POEM), OSA Technical Digest (online) (Optical Society of America, 2013).
[7] K. Xu and G. Li, “Silicon electro-optic modulator based on the theory of gate-controlled diode,” in International Photonics and Optoelectronics Meetings (POEM), OSA Technical Digest (online) (Optical Society of America, 2013).
[8] K. Xu and G. Li, “The path forward: silicon electro-optical interface for modern complementary metal-oxide-semiconductor integrated circuits (CMOS ICs),” in 2nd CIOMP-OSA Summer Session, OSA Technical Digest (online) (Optical Society of America, 2013).
[9] K. Xu, B. Huang, K. Ogudo, L. Snyman, H. Chen, and G. Li, “Silicon light-emitting device in standard CMOS technology,” in International Photonics and Optoelectronics Meetings (POEM), OSA Technical Digest (online) (Optical Society of America, 2015). Invited paper
[10] K. Xu, S. Wu, Z. Zhang, Q. Yu, X. Huang, Y. Wang, and J. Polleux, “A perspective on high speed analogy to digital conversion with silicon light-emitting devices,” in 20th OptoElectronics and Communications Conference (OECC 2015) Invited paper
[11] K. Xu, N. Ning, K. Ogudo, J. Polleux, Q. Yu, and L. Snyman, “Light emission in silicon: from device physics to applications,” International Workshop on Thin-films for Electronics, Electro-Optics, Energy, and Sensors, (TFE3S), Invited paper
出版書籍章節
[1] K. Xu, “Hot carrier luminescence in silicon metal oxide semiconductor field effect transistor,” in Advances in Optoelectronics Research, Nova Science Publisher Inc., New York, Chapter 1, pp. 1-28, 2014
[2] K. Xu, W. Sun, K. Ogudo, L. Snyman, J. Polleux, Q. Yu, and G. Li, “Silicon avalanche based light emitting diodes and their potential integration into CMOS and RF integrated circuit technology,” in Advances in Optical Communication, Intech, Chapter 5, pp. 115-142, 2014
