4. Y.F. Zhang, L. Wang, Y. Ji, X.D. Han, Z. Zhang, R. Heiderhoff, A.-K.Tiedemann, L. J. Balk, Local Thermal Conductivity of Polycrystalline AlN Ceramics Measured by Scanning Thermal Microscopy and Complementary Scanning Electron Microscopy Techniques, Chin.Phys.B 2011in pressing.
5. L.H. Wang, X.D. Han, Y.F. Zhang, K. Zheng, P. Liu and Z. Zhang, Asymmetrical quantum dot growth on tensile and compressive-strained ZnO nanowire surfaces, Acta Materialia, 59(2), 2011, 651-657
6. 郭振璽,張躍飛*,隋曼齡,張澤.孿生誘發塑性鋼的原位變形機制研究,電子顯微學報 2011
2010
6.Ze Zhang, Yue Fei Zhang, Kun Zheng, Yong Hai Yue, Li Hua Wang, Pan Liu, Xiao Dong Han, Atomic-scale-deformation-dynamics (ASDS) of nanowires and nanofilms, Materials Science Forum, 2010,654-656, p 1190-1194.
2008
7. Xiaodong Han, Shanliang Zheng, Yuefei Zhang, Kun Zheng, Shengbai Zhang, Ze Zhang, Xiaona Zhang, Xianqiang Liu, Gang Chen, Yajuan Hao, and Xiangyun Guo,Polarization Driven Covalently-Bonded Octahedral-Twinning and Backbone-Peripheral-Helical Nanoarchitectures,Nano Letters 2008,8,2258-2264..
8. Xin-chao BIAN, Chun-qing HUO, Yue-fei ZHANG, Qiang CHEN, Preparation and photoluminescence of ZnO with nanostructure by hollow-cathode discharge.Front. Mater. Sci. China, 2008,2(1):31-36
9.Yuefei Zhang, Xinchao Bian, Qiang Chen, Yu Wang, Guangqiu Zhang, Yuanjing Ge,Structural investigation and barrier properties of a-C:H thin films on polymer by PECVD,SPIE,2008, 6984,69840P1-4.
2007
10. YueFei Zhang, XiaoDong Han, Kun Zheng, XiaoNa Zhang, and Ze Zhang, Direct observation of super-plasticity of beta-SiC nanowires at low temperature, Advanced functional materials, 2007.17,3435-3440.
11. Yuefei zhang, Qiang Chen, Zhengduo Wang, Guangqiu Zhang, Yuanjing Ge, Preparation of Cr hard coatings by ion beam assisted electron beam vapor deposition on Ni and Cu substrates. Surface Coatings and Technology, 2007, 201:5190-1592.
12. XiaoDong Han, YueFei Zhang, Kun Zheng, XiaoNa Zhang, and Ze Zhang, Low-Temperature in Situ Large Strain Plasticity of Ceramic SiC Nanowires and Its Atomic-Scale Mechanism, Nano Letters 2007, 7, 452.
13. XiaoDong Han, Kun Zheng, YueFei Zhang, XiaoNa Zhang, and Ze Zhang, Low Temperature In-Situ Large-Strain-Plasticity of Silicon Nanowires,Advanced materials, 2007,19,2112.
14. Qiang Chen, Yabo Fu, Yuefei Zhang, Yuanjing Ge, PAA polymerized downstream of a high pressure DBD plasma, Surface & Coatings Technology,2007,201:4854–4857.
2006
15. Qiang Chen,Yuefei Zhang, Erli Han, and Yuanjing Ge,SiO2-like film deposition by dielectric barrier discharge plasma gunat ambient temperature under an atmospheric pressure,J. Vac. Sci. Technol. A 24, 2006,2082-2086.
16. Han, Xiaodong; Mao, Shengcheng; Wei, Qun; Zhang, Yuefei; Zhang, Ze,In-situ TEM study of the thickness impact on the crystallization features of a near equal-atomic TiNi thin film prepared by planar magnetron sputtering. Materials Transactions, 47, 2006 (3): 536-539.
2005
17. Zhang Yuefei, Chen fei, Lv Junxia, Su yongan, Xu zhong, Study on titanizing by double glow discharge plasma surface alloying technique on copper substrates. Plasma Science & Technology, 2005, Vol.7, No.4.
18. XiaoDong Han, YueFei Zhang, XianQiang Liu, and Ze Zhang, Lattice Bending, Dis-ordering and Amorphization Induced Plastic Deformation in a SiC Nano-Wire, Journal of Applied Physics, 2005, 98:124307-1~124307-4.
19. Qiang Chen, Yuefei Zhang, Erli Han and Yuanjing Ge, Atmospheric Pressure DBD Gun and Its Application in the Ink Printability. Plasma Sources Science and Technology, 14 (2005) 1–6.
2004
20. Zhang Guangque, Ge Yuanjing, Zhang Yuefei, Characterization of a Dielectric Barrier Plasma Gun Discharging at Atmospheric Pressure. CHIN.PHYS.LETT. 2004, Vol. 21, No.11.
13. 美國發明專利:Han, X. D., Liu, P., Zhang, Y. F., Zhang, Z., Device and method for measuring electromechanical properties and microstructure of nano-materials under stress state. Patent No. US8,069,733B2.
14. 美國發明專利:Han, X. D., Yue, Y. H., Zhang, Y. F., Liu, P., Zheng, K., Wang, X. D., Zhang, Z., Double tilt transmission electron microscope sample holder for in-situ measurement of microstructures, Patent No. US8,569,714B2.