姚威振，男，漢族，工學博士，九三學社社員，副研究員，碩士生導師，北京市特聘專家。曾就職於STMicroelectronics公司從事研發工作。現任中國科學院半導體研究所副研究員，九三學社第十五屆中央委員會科普工作委員會委員。
人物經歷,研究方向,代表論文,
人物經歷
2022-09~至今, 中國科學院半導體研究所, 副研究員
2020-09~2022-09,中國科學院半導體研究所, 助理研究員
2018-09~2020-09,中國科學院半導體研究所, 博士後
研究方向
1. 氮化物半導體材料的MOCVD外延生長及缺陷與應力調控
2. 氮化物半導體功率電子器件物理與製備
3. 氮化物半導體長波長發光材料與器件
4. 新型MOCVD設備研製與套用
代表論文
1. Huidan Niu, Weizhen Yao*, Shaoyan Yang*, Xianglin Liu, Qingqing Chen, Lianshan Wang, Huanhua Wang and Zhanguo Wang. Effects of pressure on GaN growth in a specific warm-wall MOCVD reactor. CrystEngComm, 2023 (8): 1263-1269.
2. Mengyao Geng, Huixing Meng*, Weizhen Yao* and Xianglin Liu, Reliability Analysis of Metalorganic Chemical Vapor Deposition Device, in: The Proceeding of the 2023 Annual Reliability and Maintainability Symposium (RAMS), Orlando, FL, USA, Jan. 23th – 26th, 2023.
3. Xuan Liu, Huixing Meng*, Weizhen Yao*, Xianglin Liu, and Chao Zhang, Process risk prioritization of metalorganic chemical vapor deposition device, in: The Proceedings of the 32nd European Safety and Reliability Conference (ESREL), Dublin, Ireland, Aug. 28th - Sept. 1, 2022.
4. Weizhen Yao, Lianshan Wang*, Yulin Meng, Shaoyan Yang and Zhanguo Wang. Stress engineering for reducing the injection current induced blueshift in InGaN-based red light-emitting diodes. CrystEngComm, 2021 (23): 2360-2366.
5. Weizhen Yao, Fangzheng Li, Lianshan Wang*, Sheng Liu, Hongyuan Wei, Shaoyan Yang and Zhanguo Wang. Investigation of coherency stress-induced phase separation in AlN/AlxGa1−xN superlattices grown on sapphire substrates. CrystEngComm, 2020 (22): 3198-3205.
6. Weizhen Yao, Lianshan Wang*, Fangzheng Li, Yulin Meng, Shaoyan Yang and Zhanguo Wang. Effect of C-doped GaN film thickness on the structural and electrical properties of AlGaN/GaN-based high electron mobility transistors. Semiconductor Science and Technology, 2019 (34): 125006.
7. Weizhen Yao, Lianshan Wang*, Fangzheng Li, Yulin Meng, Shaoyan Yang and Zhanguo Wang. Impact of Cone-Shape-Patterned Sapphire Substrate and Temperature on the Epitaxial Growth of p-GaN via MOCVD. Physica Status Solidi (a), 2019 (216): 1900026.
8. Weizhen Yao*, Fabrice Roqueta, Jean-Charles Craveur, Soufyane Belhenini, Pascal Gardes and Abdellah Tougui. Modelling and analysis of the stress distribution in a multi-thin film system Pt/USG/Si. Materials Research Express, 2018 (5): 046405.
9. Weizhen Yao*, Soufyane Belhenini, Fabrice Roqueta, Cyril Pujos, Erwan Bruno, Pascal Gardes and Abdellah Tougui. Intrinsic stress effects on the warpage of silicon substrate during thin film deposition, photolithography and etching processes, in: 17th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), Montpellier, France, Apr. 18-20, 2016.
10. Qingqing Chen, Shaoyan Yang, Chenming Li, Weizhen Yao, Xianglin Liu, Huidan Niu, Rui Yang, Huijie Li, Hongyuan Wei, Lianshang Wang and Zhanguo Wang. MOCVD growth of ZrN thin films on GaN/Si templates and the effect of substrate temperature on growth mode, stress state, and electrical properties. Journal of Physics D: Applied Physics, 2022 (40): 404003.
11. 高潔，姚威振，楊少延，魏潔，李成明，魏鴻源. 磁控濺射ZrN薄膜的生長機理及光學性能. 人工晶體學報, 2021, 50 (5): 831-837.
12. 高潔，姚威振，楊少延，魏潔，李成明，魏鴻源. 襯底溫度對磁控濺射ZrN薄膜結構和物理性能的影響. 功能材料, 2021, 52(9): 9148-9153.
13. 李成明，蘇寧，李琳，姚威振，楊少延. 一種垂直遞變流速氫化物氣相外延（HVPE）反應腔流場分析及大尺寸材料生長. 真空, 2021, 58(02): 1-5.
14. Fangzheng Li, Lianshan Wang*, Weizhen Yao, Yulin Meng, Shaoyan Yang and Zhanguo Wang. Analysis of growth rate and crystal quality of AlN epilayers by flow-modulated metal organic chemical vapor deposition. Superlattices and Microstructures, 2020 (137): 106336.
15. 牛慧丹，孔蘇蘇，楊少延，劉祥林，魏鴻源，姚威振，李輝傑，陳慶慶，汪連山，王占國. 溫度對氮化鋁表面形貌的調控及演化機理（英文）, 發光學報, 2021, 42(11): 1739-1747.
16. Yulin Meng, Lianshan Wang*, Fangzheng Li, Guijuan Zhao, Weizhen Yao, Shaoyan Yang and Zhanguo Wang. Growth and characterization of amber light-emitting diodes with dual-wavelength InGaN/GaN multiple-quantum-well structures. Materials Research Express, 2019 (6): 103925.
