基本介紹
- 中文名：唐建石
- 學位/學歷：博士
- 職業：教師
- 專業方向：新型存儲器與類腦計算
- 任職院校：清華大學
人物經歷,獲獎榮譽,研究方向,學術成果,
人物經歷
2008年本科畢業於清華大學微納電子系，2014年博士畢業於美國UCLA電子工程系，2015年-2019年在美國IBM T. J. Watson Research Center工作，2019年1月回清華大學微納電子系/微電子所任職助理教授（教研系列）。
獲獎榮譽
先後獲NT18“Best Young Scientist Award”、IEEE “Best Lightning Talk”、IBM Invention Achievement Awards、IBM Research Pat Goldberg Memorial Best Paper Award等獎項。
研究方向
新型存儲器與類腦計算、碳納米管電子學與柔性電子學、納米材料自旋電子學等。
學術成果
近年來在Nature、Science、Nature Nanotechnology、Nature Electronics、Nature Materials、Nano Letters、ACS Nano、Advanced Materials、IEDM、ISSCC等知名期刊和國際會議上發表論文70餘篇，引用超過4300次，並申請技術發明專利30餘項（已授權11項）。擔任IEEE-NANO、CMSE、MEAMT、ACMMT等國際會議的技術委員會成員，以及Nature Electronics、Nature Communications、Advanced Materials、Nano Letters、ACS Nano等雜誌審稿人。
近期代表作Selected Publications:
[1]P. Yao, H. Wu, B. Gao,J. Tang, Q. Zhang, W. Zhang, J. Joshua Yang, H. Qian, “Fully Hardware-Implemented Memristor Convolutional Neural Network”,Nature,577, 641(2020).
[2]M. Zhao, B. Gao,J. Tang, H. Qian, H. Wu, “A Review: Reliability of Analog Resistive Switching Memory for Neuromorphic Computing”,Appl.Phys. Rev.,7, 011301(2020).
[3]Q. Liu, B. Gao, P. Yao, D. Wu, J. Chen, Y. Pang, W. Zhang, Y. Liao, C-X. Xue, W-H. Chen,J. Tang, Y. Wang, M-F. Chang, H. Qian, H. Wu, “A Fully-Integrated Analog ReRAM Based 78.4 TOPS/W Compute-In-Memory Chip with Fully-Parallel MAC Computing”,ISSCC, 33.2(2020).
[4]J. Tang, F. Yuan, X. Shen, Z. Wang, M. Rao, Y. He, Y. Sun, X. Li, W. Zhang, Y. Li, B. Gao, H. Qian, G. Bi, S. Song, J. Joshua Yang*, H. Wu*, “Bridging Biological and Artificial Neural Networks with Emerging Neuromorphic Devices: Fundamentals, Progress, and Challenges”,Adv. Mater.,31, 1902761(2019).
[5]Y. Lin, Q. Zhang,J. Tang, B. Gao, C. Li, P. Yao, Z. Liu, J. Zhu, J. Lu, S. X. Hu, H. Qian, H. Wu, “Bayesian Neural Network Realization by Exploiting Inherent Stochastic Behavior of Analog RRAM”,IEDM Tech. Dig.,14.6.1-14.6.4(2019).
[6]J. Tang, D. Bishop, S. Kim, M. Copel, T. Gokmen, T. Todorov, S. Shin, K.-T. Lee, P. Solomon, K. Chan, W. Haensch, J. Rozen, “ECRAM as Scalable Synaptic Cell for High-Speed, Low-Power Neuromorphic Computing”,IEDM Tech. Dig.,13.1.1-13.1.4(2018).
[7]J. Tang, Q. Cao, G. Tulevski, K. Jenkins, L. Nela, D. Farmer, S.-J. Han, “Flexible CMOS integrated circuits based on carbon nanotubes with sub-10 ns stage delays”,Nature Electronics,1, 191 (2018).
[8]L. Nela,J. Tang, Q. Cao, G. Tulevski, S.-J. Han, “Large-Area High-Performance Flexible Pressure Sensor with Carbon Nanotube Active Matrix for Electronic Skin”,NanoLett.,18, 2054 (2018).
[9]S.-J. Han,J. Tang, B. Kumar, A. Falk, D. Farmer, G. Tulevski, K. Jenkins, S. Oida, J. Ott, J. Hannon, W. Haensch, “High-Speed Logic Integrated Circuits with Solution-Processed Self-Assembled Carbon Nanotubes”,NatureNanotech.,12, 861 (2017).
[10]J. Tang, D. B. Farmer, S. Bangsaruntip, K.-C. Chiu, B. Kumar, S.-J. Han, “Contact Engineering and Channel Doping for Robust Carbon Nanotube NFETs”,Int. Symp. on VLSI Technol. Sys. Appl.,(2017).
[11]J. Tang, Q. Cao, D. B. Farmer, G. Tulevski, S.-J. Han, “High-Performance Carbon Nanotube Complementary Logic with End-Bonded Contacts”,IEEE Trans. Electron Devices,64,2744 (2017)
[12]Complementary Logic with Low-Temperature Processed End-Bonded Metal Contacts”,IEDM Tech. Dig.,5.1.1-5.1.4(2016).
[13]J. Tang, G. Yu, C.-Y. Wang, L.-T. Chang, W. Jiang, C. He, K. L. Wang, “VersatileFabrication of Self-Aligned Nanoscale Hall Devices using Nanowire Masks”,NanoLett.,16, 3109 (2016).
[14]Z. Hu, J. Comeras, H. Park,J. Tang, A. Afzali, G. S. Tulevski, J. B. Hannon, M. Liehr, S.-J. Han, “Physically Unclonable Cryptographic Primitives using Self-Assembled Carbon Nanotubes”,NatureNanotech.,11, 559 (2016).
[15]J. Tang, K. L. Wang, “Electrical Spin Injection and Transport in Semiconductor Nanowires: Challenges, Progress, and Perspectives”,Nanoscale,7, 4325(2015).
[16]Q. Cao, S.-J. Han, J. Tersoff, A. D. Franklin, Y. Zhu, Z. Zhang, G. S. Tulevski,J. Tang, W. Haensch, “End-Bonded Contacts for Carbon Nanotube Transistors with Low, Size-Independent Resistance”,Science,350, 68 (2015).
[17]J. Tang, L.-T. Chang, X. Kou, K. Murata, E. S. Choi, M. Lang, Y. Fan, Y. Jiang, M. Montazeri, W. Jiang, Y. Wang, L. He, K. L. Wang, “Electrical Detection of Spin-Polarized Surface States Conduction in (Bi0.53Sb0.47)2Te3Topological Insulator”,Nano Lett.,14, 5423 (2014).
[18]J. Tang, T. Nie, K. L Wang, “Spin Transport in Ge Nanowires for Diluted Magnetic Semiconductor-based Nonvolatile Transpinor”,ECS Transactions,64, 613 (2014).
[19]J. Tang, C.-Y. Wang, L.-T. Chang, Y. Fan, T. Nie, M. Chan, W. Jiang, Y.-T. Chen, H.-J. Yang, H.-Y. Tuan, L.-J. Chen, K. L. Wang, “Electrical Spin Injection and Detection in Mn5Ge3/Ge/Mn5Ge3Nanowire Transistors”,Nano Lett.,13, 4036(2013).
[20]J. Tang, C.-Y. Wang, W. Jiang, L.-T. Chang, Y. Fan, M. Chan, C. Wu, M.-H. Hung, P.-H. Liu, H.-J. Yang, H.-Y. Tuan, L.-J. Chen, K. L. Wang, “Electrical Probing of Magnetic Phase Transition and Domain Wall Motion in Single-Crystalline Mn5Ge3Nanowire”,Nano Lett.,12, 6372(2012).
[21]J. Tang, C.-Y. Wang, M.-H. Hung, X. Jiang, L.-T. Chang, L. He, P.-H. Liu, H.-J. Yang, H.-Y. Tuan, L.-J. Chen, K. L. Wang, “Ferromagnetic Germanide in Ge Nanowire Transistors for Spintronics Application”,ACS Nano,6, 5710(2012).
[22]J. Tang, C.-Y. Wang, L.-J. Chen, K. L. Wang, “Ge Nanowire Transistors with High-Quality Interfacesby Atomic-Scale Thermal Annealing”,Proc. IEEE NANOConf., 1-5 (2012).
[23]J. Tang, C.-Y. Wang, F. Xiu, M. Lang, L.-W. Chu, C.-J. Tsai, Y.-L. Chueh, L.-J. Chen, K. L. Wang, “Oxide-Confined Formation of Ge Nanowire Heterostructure for High-Performance Transistors”,ACS Nano,5, 6008 (2011).
[24]J. Tang, C.-Y. Wang, F. Xiu, Y. Zhou, L.-J. Chen, K. L. Wang, “Formation and Device Application of Ge Nanowire Heterostructures via Rapid Thermal Annealing”,Adv. Mater. Sci. Eng.,2011, 316513 (2011).
[25]J. Tang, C.-Y. Wang, F. Xiu, A. J. Hong, S. Chen, M. Wang, C. Zeng, H.-J. Yang, H.-Y. Tuan, C.-J. Tsai, L.-J. Chen, K. L. Wang, “Single-Crystalline Ni2Ge/Ge/Ni2Ge Nanowire Heterostructure Transistors”,Nanotechnology,21, 505704 (2010).
