吳曙翔，畢業於中山大學，獲博士學位，現為中山大學物理科學與工程技術學院副教授。
基本介紹
- 中文名：吳曙翔
- 畢業院校：中山大學
- 學位/學歷：博士
- 職業：教師
- 職稱：副教授
人物經歷,學科方向,代表論著,
人物經歷
2004-2009年：中山大學 物理科學與工程技術學院，碩博連讀；
2009-2011年：新加坡南洋理工大學，博士後；
2011-至今：中山大學 物理科學與工程技術學院
學科方向
（1）非揮發性信息存儲研究
（2）強關聯功能氧化物薄膜（如LaAlO3/SrTiO3二維電子氣）輸運性質及器件製備。
代表論著
第一/通訊作者代表作：
1. Shuxiang Wu, Guangheng Wu, Jian Qing, Xiang Zhou，Dinghua Bao, Guowei Yang, and Shuwei Li, Electrically induced colossal capacitance enhancement in LaAlO3/SrTiO3 heterostructures, NPG Asia Materials 5, e56 (2013).(一區，IF=10.1)
2. Shuxiang Wu, Xin Luo, Stuart Turner, Haiyang Peng, Weinan Lin, Junfeng Ding, Adrian David, Biao Wang, Gustaaf Van Tendeloo, Junling Wang, and Tom Wu, Nonvolatile Resistive Switching in Pt/LaAlO3/SrTiO3 Heterostructures，Physical Review X 3, 041027 (2013).（一區，IF=9.0）
3. Shuxiang Wu, Lizhu Ren, Jian Qing, Fengmei Yu, Kungan Yang, Mei Yang, Yunjia Wang, Meng Meng, Wenqi Zhou, Xiang Zhou, and Shuwei Li, Bipolar Resistance Switching in Transparent ITO/LaAlO3/SrTiO3,ACS Applied Materials & Interfaces 6, 8575 (2014). (一區，IF=6.7)
4. M. Meng，Shuxiang Wu* ,L. Z. Ren, W. Q. Zhou, Y. J. Wang, G. L. Wang,and S. W. Li*, Extrinsic anomalous Hall effect in epita- xial Mn4N films, Applied Physics Letters, 106, 032407 （2015）.
5. Meng Meng，Shuxiang Wu*，Wenqi Zhou, Lizhu Ren, Yunjia Wang, G. L. Wang, and Shuwei Li*，Anomalous Hall effect in epitaxial ferrimagnetic anti-perovskite Mn4−xDyxN films, Journal of Applied Physics, ISSN：0021-8979，118, 053911 （2015）.
6. Meng Meng ，Shuxiang Wu*，Lizhu Ren, Wenqi Zhou, Yunjia Wang, G. L. Wang, and Shuwei Li*, Enlarged Mn 3s splitting and room-temperature ferromagnetism in epitaxially grown oxygen doped Mn2N0.86 films, Journal of Applied Physics, 116, 17,173911（2014）.
7. Shuxiang Wu，Xinman Chen, Lizhu Ren, Wei Hu, Fengmei Yu, Kungan Yang, Mei Yang, Yunjia Wang, Meng Meng, Wenqi Zhou, Dinghua Bao, and Shuwei Li, Write-once-read-many-times characteristics of Pt/Al2O3/ITO memory devices, Journal of Applied Physics 116, 074515 (2014). (IF=2.2)
8. Shuxiang Wu and Shuwei Li, Light-Induced Giant Capacitance Enhancement in LaAlO3/SrTiO3 Heterostructures, Nanoscience and Nanotechnology Letters 6, 565 (2014).(IF=1.4)
9. Shuxiang Wu, Lizhu Ren, Fengmei Yu, Kungan Yang, Mei Yang, Yunjia Wang, Meng Meng, Wenqi Zhou, Shuwei Li,Colossal resistance switching in Pt/BiFeO3/Nb:SrTiO3 memristor, Applied Physics A, 116, 1741 (2014) (IF=1.7)
10. Shuxiang Wu, Haiyang Peng, and Tom Wu, Concurrent nonvolatile resistance and capacitance switching in LaAlO3, Applied Physics letters 98, 093503(2011). (IF=3.5)
11. Shuxiang Wu, Xingyu Li, Xiangjun Xing, Ping Hu, Yunpeng Yu, and Shuwei Li, Resistive dependence of magnetic properties in nonvolatile Ti/Mn:TiO2/SrTi0.993Nb0.007O3/Ti memory device, Applied Physics Letter 94, 253504 (2009) (IF=3.5)
12. Shuxiang Wu, L. M. Xu, X. J. Xing, S. M. Chen, Y. B. Yuan, Y. J. Liu, Y. P. Yu, X. Y. Li, and Shuwei Li,Reverse-bias-induced bipolar resistance switching in Pt/TiO2/SrTi0.99Nb0.01O3/Pt devices, Applied Physics Letter 93, 043502 (2008).(IF=3.5)
13. Shuxiang Wu, Y. Q. Xia, X. L. Yu, Y. J. Liu, and Shuwei Li, Magnetic properties of MnxTi1−xN thin films grown by plasma-assisted molecular beam epitaxy, Journal of Applied Physics 102, 063911 (2007). (IF=2.2)
14. Shuxiang Wu, Y. J. Liu, X. J. Xing, X. L. Yu, L. M. Xu, Y. P. Yu, and Shuwei Li, Journal of Applied Physics 103, 063517(2008). (IF=2.2)
