《先進功能材料力學》是2012年浙江大學出版社出版社出版的圖書，作者是王彪。
基本介紹
- 書名：先進功能材料力學
- 作者：王彪
- ISBN：9787308100250
- 頁數：528
- 定價：268.00元
- 出版社：浙江大學出版社
- 出版時間：2012-10
內容簡介,目錄,
內容簡介
This book is an attempt to tackle mainly the followingtwo proplems:（1） to analyze the effect of stress and deformation on the functionalproperties of the materials, and （2） to establish the quantitative models relatedwith the microstructural evolution. The general formulation will be developedfrom the detailed analyses of the separated examples.
目錄
1 Introduction
2 Basic Solutions of Elastic and Electric Fields of Piezoelectric Materials
with Inclusions and Defects
2.1 The Coupled Differential Equations of Elastic and Electric Fields in Piezoelectric Solids
2.1.1 Thermodynamic Framework
2.1.2 Linear Constitutive Equations
2.1.3 The Equation of Equlibrium
2.1.4 The Basic Equations of a Static Electric Field
2.1.5 Differential Equations for Piezoelectric Materials
2.2 Boundary Conditions
2.3 Solution Methods for Two-Dimensional Problems
2.3.1 The Stroh Formalism for Piezoelectric Materials
2.3.2 The Lekhnitskii Formalism for Piezoelectric Materials
2.3.3 Conformal Transformation of the Core Function
2.4 Basic Solutions for Two-Dimensional Problems
2.4.1 Elliptical Cylindrical Inclusions in Piezoelectric Materials
2.4.2 Cracks
2.4.3 Dislocations and Line Charges
2.5 Solution Methods for Three-Dimensional Problems
2.5.1 Eigenstrains and Equivalent Inclusion Method
2.5.2 Method of Fourier Integrals
2.5.3 Method of Green's Function
2.6 Basic Solution for Three-Dimensional Problems
2.6.1 Ellipsoidal Inhomogeneous Inclusions
2.6.2 Flat Elliptical Cracks
2.6.3 Ellipsoidal Inhomogeneity Embedded in an Infinite Matrix when both Phases Undergo Eigenstrains
2.6.4 Green's Function
2.7 Remarks
References
3 Micromechanics Models of Piezoelectric and Ferroelectrie Composites
3.1 Background
3.2 Some Definitions
3.3 Effective Material Constants of Piezoelectric Composites
3.3.1 The Dilute Model
3.3.2 The Self-Consistent Model
3.3.3 The Mori-Tanaka Mean Field Model
3.3.4 The Differential Model
3.4 Energy Formulation of Ferroelectric Composites
3.4.1 Elastic Strain Energy Density for Ferroelectric Composites
3.4.2 Intrinsic Free Energy Density for Ferroelectric Composites
3.4.3 Total Free Energy for Ferroelectric Composites with Spherical Inclusions
3.5 Phase Diagrams
3.5.1 Total Free Energy for Ferroelectric Composites with
Spherical Inclusions and Equiaxed Strains
3.5.2 Phase Diagrams and Total Polarizations
3.6 Remarks
Appendix A: Radon Transform
References
4 Determination of the Smallest Sizes of Ferroeleetric Nanodomains
4.1 Introduction
4.2 Electric Fields in Ferroelectric Thin Film
4.2.1 General Expression of Electric Field of Ferroelectric Domain
4.2.2 AFM-Induced Electric Field in Ferroelectric Thin Films
4.3 Energy Expressions
4.3.1 Energy Expression for 180~ Domain in a Ferroelectric
Film Covered with Top and Bottom Electrodes
4.3.2 Energy Expression for 180~ Domain in Ferroelectric
Film Induced by an AFM Tip without the Top Electrode
4.4 Driving Force and Evolution Equations of Domain Growth
4.5 Stability Analysis
4.6 Remarks
Appendix B: Derivation of the Electric and Magnetic Field for a Growing 180° Domain
References
5 Size and Surface Effects of Phase Transition on Nanoferroelectrie Materials
5.1 Introduction and Overview of Ferroelectrics in Nanoscale Dimensions
5.1.1 Ferroelectric Thin Films in Nanoscale Dimensions
5.1.2 Ferroelectric Tunneling Junctions and Capacitors in Nanoscale Dimensions
5.1.3 Ferroelectric Multilayers in Nanoscale
5.1.4 Ferroelectric Nanowires and Nanotubes
5.1.5 Ferroelectric Nanograins or Nanoislands on Substrates
5.2 Thermodynamic Modeling and Stability Analysis of Ferroelectric Systems
5.2.1 Background of the Thermodynamic Modeling for Ferroeleclrics
5.2.2 Electrostatics for Ferroelectrics
5.2.3 Thermodynamics of Ferroelectrics
5.2.4 Stability Analysis on Critical Properties of Ferroelectric Systems
5.3 Ferroelectric Thin Films in Nanoscale
5.3.1 Thermodynamic Model for a Thick Ferroelectric Film
5.3.2 Size and Surface Effects on Ferroelectric Thin Films
5.3.3 The Evolution Equation and Stability of the Stationary States ..
5.3.4 Curie Temperature and Critical Thickness
5.3.5 Curie-Weiss Law of Ferroelectric Thin Film in Nanoscale
5.4 Critical Properties of Ferroelectric Capacitors or Tunnel Junctions..
5.4.1 The Thermodynamic Potential of the Ferroelectric
Capacitors or Tunnel Junctions
5.4.2 The Evolution Equation and Stability of the Stationary States..
5.4.3 Curie Temperature of the Ferroelectric Capacitors or
Tunnel Junctions
5.4.4 Polarization as a Function of Thickness of the Ferroelectric
Capacitors or Tunnel Junctions
5.4.5 Critical Thickness of the Ferroelectric Capacitors or
Tunnel Junctions
5.4.6 Curie-Weiss Relation of the Ferroelectric Capacitors or
Tunnel Junctions .
5.5 Ferroelectric Superlattices in Nanoscale
5.5.1 The Free Energy Functional ofFerroelectric Superlattices
5.5.2 The Phase Transition Temperature ofPTO/STO Superlattice.
5.5.3 Polarizafion and Critical Thickness ofPTO/STO Superlattice
5.5.4 The Curie-Weiss-Type Relation ofPTO/STO Superlattice
5.6 Ferroelectric Nanowires and Nanotubes
5.6.1 Surface Tension ofFerroelectric Nanowires and Nanotubes.
5.6.2 Size and Surface Effects on Ferroelectric Nanowires
5.6.3 Ferroelectric Nanotubes
5.7 Ferroelectric Nanograins or Nanoislands
5.7.1 Free Energy of Ferroelectric Nanograins or Nanoislands
5.7.2 Stability of the Ferroelectric State and Transition
Characteristics
5.7.3 Critical Properties of Nanograins or Nanoislands
5.8 Remarks
References
6 Strain Engineering: Ferroeleetrie Films on Compliant Substrates
6.1 Background
6.2 Manipulation of Phase Transition Behavior of Ferroelectric Thin
Films on Compliant Substrates
6.2.1 Free Energy Expressions
6.2.2 Evolution Equations
6.2.3 Manipulation of Ferroelectric Transition Temperature and Critical Thickness
6.2.4 Manipulation of the Order of Transition
6.3 Piezoelectric Bending Response and Switching Behavior of
Ferroelectric Thin Film with Compliant Paraelectric Substrate
6.3.1 Model of Ferroelectric Thin Film with Compliant
Paraelectric Substrate and the Energy Expressions
6.3.2 Solution of the Evolution Equation
6.3.3 The Stationary and Relative Bending Displacements of the
Bilayer
6.3.4 Dynamic Piezoelectric and Bending Response of the
Bilayer Under a Cyclic Electric Field
6.3.5 Examples and Discussions
6.4 Critical Thickness for Dislocation Generation in Piezoelectric Thin
Films on Substrate
6.4.1 Elastic and Electric Fields in a Piezoelectric Semi-Infinite
Space with a Dislocation
6.4.2 Critical Thickness for Dislocation Generation
6.4.3 Effect of Piezoelectric Behavior of the Materials on the
Critical Thickness for Dislocation Formation
6.5 Critical Thickness of Dislocation Generation in Ferroelectdc
Thin Film on a Compliant Substrate
6.5.1 Mechanical Properties of the Problem
6.5.2 The Formation Energy and the Critical Thickness of Spontaneous Formation of Misfit Dislocation
6.6 Remarks
References
7 Derivation of the Landau-Ginzburg Expansion Coefficients
7.1 Introduction
7.2 Fundamental of the Landau-Devonshire Theory
7.2.1 The History of the Landau Free Energy Theory
7.2.2 The Thermodynamic Functions of the Dielectrics and Phase Transition
7.2.3 The Expansion of the Free Energy and Phase Transition
7.3 Determination of Landau Free Energy Expansion Coefficients Based on Experimental Methods
7.3.1 The Experimental Observation of the Phase Transition Characteristics in Ferroelectrics
7.3.2 The Phenomenological Treatment of Devonshire Theory
7.3.3 The Elastic Gibbs Free Energy of PbTiO3 and Its Coefficients
7.3.4 The Determination of the Expansion Coefficients from
the First-Principle Calculation Based on the Effective
Hamiltonian Method
7.4 Gradient Terms in the Landau-Devonshire-Ginzburg Free Energy Expansion
7.4.1 The Consideration of Spatial Non-uniform Distribution
of the Order Parameters in the Landau Theory
7.4.2 The Critical Region and the Applicability of Landau
Mean Field Theory
7.4.3 Determination of the Gradient Terms from the Lattice
Dynamic Theory
7.4.4 The Extrapolation Length and the Gradient Coefficient
7.5 The Transverse Ising Model and Statistical Mechanics Approaches
7.5.1 Phase Transition from the Transverse Ising Model
7.5.2 Relationship of the Parameters Between Landau Theory
and the Transverse Ising Model
7.5.3 Determination of Landau-Ginzburg Free Energy Expansion
Coefficients from Statistical Mechanics
7.6 Remarks
References
8 Multiferroie Materials
8.1 Background
8.2 Coupling Mechanism of Multiferroic Materials
8.2.1 Single Phase Multiferroic Materials
8.2.2 Magnetoelectric Composites
8.3 Theories of Magnetoeleclric Coupling Effect at Low Frequency
8.3.1 Energy Formulation for Multiferroic Composites
8.3.2 Phase Transition Behaviors in Layered Structures
8.3.3 Magnetoelectfic Coupling Coefficients in Layered Structures
8.4 Magnetoelectric Coupling at Resonance Frequency
8.4.1 Magnetoelectric Coupling at Bending Modes
8.4.2 Magnetoelectfic Coupling at Electromechanical Resonance
8.4.3 Magnetoelectric Coupling at Ferromagnetic Resonance
8.5 Remarks
References
9 Dielectric Breakdown of Mieroeleetronie and Nanoeleetronie Devices.
9.1 Introduction
9.2 Basic Concepts
9.2.1 MOS Structure
9.2.2 Different Tunneling Modes
9.2.3 Dielectric Breakdown Modes
9.2.4 Defect Generation
9.2.5 Basic Statistical Concepts of Dielectric Breakdown
9.2.6 Stress Induced Leakage Current
9.2.7 Holes Generation
9.2.8 Energetics of Defects
9.3 Mechanism Analysis of Tunneling Phenomena in Thin Oxide Film.
9.3.1 Self-consistent SchrSdinger's and Poisson's Equations
9.3.2 Transmission Coefficient
9.3.3 Tunneling Current Components
9.3.4 Microscopic Investigation of Defects from First-Principles Calculation
9.3.5 Manipulating Tunneling by Applied Strains
9.4 Degradation Models in Gate Oxide Films
9.4.1 Anode Hole Injection Model
9.4.2 Thermochemical Model
9.4.3 Anode Hydrogen Release Model
9.4.4 Thermal Breakdown Model
9.4.5 Mechanical-Stress-Induced Breakdown Model
9.4.6 Remarks
9.5 Statistical Models of Dielectric Breakdown
9.5.1 A Basic Statistical Model
9.5.2 A Three-Dimensional Statistical Model
9.5.3 Sphere and Cube Based Percolation Models
9.5.4 Combination of Percolation Model and Degradation Model
9.6 Damage of Dielectric Breakdown in MOSFET
9.6.1 Lateral Propagation of Breakdown Spot
9.6.2 Dielectric Breakdown-Induced Epitaxy
9.6.3 Dielectric Breakdown-Induced Migration
9.6.4 Meltdown and Regrowth of Silicided Poly-Si Gate
9.6.5 Damage in Substrate
9.7 Remarks
References
Index
