黃安平：男，博士（後），北京航空航天大學教授，美國史丹福大學訪問學者，2008年度教育部新世紀人才計畫入選者，2007年度“藍天科技新秀”，3rd IEEE International NanoElectronics Conference (INEC-2010)納米電子學分會主席。長期從事新型半導體薄膜物理與器件研究，在薄膜材料的合成製備、分析測試、性能研究等方面積累了一定的工作經驗，在教學科研等方面取得了一些成果。承擔兩門北京市精品課程的教學工作，目前已發表SCI檢索學術論文51篇，英文論著(Book Chapter)2篇，國際會議論文11篇，國際會議大會邀請報告1次。部分研究成果被全球最大的專業電信諮詢公司之一Frost & Sullivan公司在其"Technical Insights"網站上以“新技術亮點”為題專門撰文評述。
基本介紹
個人介紹,主要研究方向,
個人介紹
現講授本科生《大學物理學》等課程。目前承擔的科研項目主要有國家自然科學基金、教育部新世紀人才基金、教育部博士點基金、藍天新秀基金等。現有研究生5名，已畢業研究生2人，均獲得了北京航空航天大學優秀研究生（校級）。
每年擬招收2-3名研究生。
熱誠歡迎有志於從事半導體薄膜與器件物理相關研究的同學加入我們的團隊。
主要研究方向
現主要從事半導體薄膜與器件物理，新型柵介質材料與器件，半導體材料表面改性與生物物理等方面的研究工作。
研究成果：
1. A. P. Huang, Z. S. Xiao, X. Y. Liu, L. Wang and P. K. Chu, Role of fluorine in plasma nitridated ZrO2 thin films under irradiation, Applied Physics Letters, 93 (2008) 122907-1–122907-3
2. A. P. Huang and P. K. Chu, Interfacial Compound Suppression and Dielectric Properties Enhancement of F-N-codoped ZrO2 Thin Films, Applied Physics Letters, 90 (2007) 082906-1–082906-3
3. A. P. Huang, Paul K. Chu and X. L. Wu, Enhanced Electron Field Emission from Oriented Columnar AlN and Mechanism, Applied Physics Letters, 88(2006) 251103-1-251103-3
4. A. P. Huang, S. L. Xu, M. K. Zhu, B. Wang, H. Yan and T Liu, Crystallization control of sputtered Ta2O5 thin films by substrate bias, Applied Physics Letters, 83 (2003) 3278-3280
5. A. P. Huang, L. Wang, J. B. Xu and P. K. Chu, Plasma Nitridated High-k Polycrystalline Array Induced by Electron Irradiation, Nanotechnology, 17 (2006) 4379-4383
6. A. P. Huang and P. K. Chu, Improvement of Interfacial and Dielectric Properties of Sputtered Ta2O5 Thin Films by Substrate Biasing and the Underlying Mechanism, Journal of Applied Physics, 97 (2005) 114106-1–114106-5.
7. A. P. Huang, S. L. Xu, M. K. Zhu, G.H. Li, T. Liu, B. Wang, and H. Yan “Oriented growth of Ta2O5 films induced by substrate bias” Journal of Crystal Growth 2003, 255: 145~149;
8.A. P. Huang, G. J. Wang, S.L. Xu, M. K. Zhu, G. H. Li, B. Wang, H. Yan “Oriented AlN films prepared with solid AlCl3 source by bias assisted Cat-CVD” Materials Science and Engineering B 2004, 107:161~165;
9.A. P. Huang, and Paul K. Chu “Crystallization Improvement of Ta2O5 Thin Films by Addition of Water Vapor” Journal of Crystal Growth 2005, 274: 73~77;
10.A. P. Huang, Paul K. Chu, H. Yan, and M. K. Zhu “Dielectric Properties Enhancement of ZrO2 Thin Films Induced by Substrate Biasing” J. Vac. Sci. Technol. B 2005, 23(2): 566~569;
11.A. P. Huang, Ricky K. Y. Fu, Paul K. Chu，L. Wang, W. Y. Cheung, J. B. Xu, and S. P. Wong “Plasma Nitridation and Microstructure of High-k ZrO2 Thin Films Fabricated by Cathodic Arc Deposition” J. Crystal Growth 2005, 277: 422~427;
12.A. P. Huang, and Paul K. Chu “Microstructural Improvement of Sputtered ZrO2 Thin Films by Substrate biasing” Materials Science and Engineering B 2005, 121(3): 244~247;
13.A. P. Huang, and Paul K. Chu “Characteristics of Interface between Ta2O5 Thin Film and Si (100) Substrate” Surface and Coatings Technology 2005, 200: 1714~1718;
14.A. P. Huang, Paul K. Chu L. Wang, W. Y. Cheung, J. B. Xu, and S. P. Wong “Fabrication of Rutile TiO2 Thin Films by Low-Temperature, Bias-Assisted Cathodic Arc Deposition and Their Dielectric Properties” J. Mater. Res. 2006, 21(4):
15.A. P. Huang, Z. F. Di, Paul K. Chu “Microstructure and Visible-Photoluminescence of Titanium Dioxide Thin Films Fabricated by Dual Cathodic Arc and Nitrogen Plasma Deposition” Surface and Coatings Technology 2007, 201: 4897~4900;
16.A. P. Huang, Z. F. Di, Ricky K. Y. Fu, Paul K. Chu “Improvement of Interfacial and Microstructure Properties of High-k ZrO2 Thin Films Fabricated by Filtered Cathodic Arc Deposition Using Nitrogen Incorporation” Surface and Coatings Technology 2007, 201:8282-8285;
17.A. P. Huang and P. K. Chu, “Thermal Stability and Electrical Properties of High-k Gate Dielectric Materials”, Proceedings 6th International Workshop on Junction Technology (IWJT), Paper 5.4, 2006: 214~ 219(Invited talk)
