基本介紹
- 中文名：趙有文
- 國籍：中國
- 民族：漢族
- 職業：教師
人物簡介,研究領域,代表論著,
人物簡介
取得的主要學術成績：通過實驗研究揭示了原生磷化銦材料中氫-銦空位複合體缺陷的形成規律以及與材料電學補償和熱生缺陷的關係。通過研究和比較純磷和磷化鐵氣氛下高溫退火處理磷化銦材料後產生的深能級缺陷，發現了與退火過程中原子擴散有關的缺陷產生與抑制現象並給出了物理解釋。在此基礎上證明這些深能級缺陷大部分與銦空位有關。同時掌握了抑制深能級缺陷產生、製備高質量半絕緣磷化銦材料的物理機理和技術途徑。對影響晶體完整性的因素進行了全面的分析研究，包括微缺陷的成因、結構位錯的形成原因以及所產生的晶格畸變、點缺陷對晶格完整性的影響等。這些研究成果有效促地進了高質量磷化銦等材料單晶生長技術和單晶襯底製備技術的提高。
研究領域
代表論著
1. Y. W. Zhao, H. W. Dong, Y. H. Chen, Y. H. Zhang, J. H.Jiao, J. Q. Zhao and L. Y. Lin, S. Fung, Creation and Suppression of Point Defects through a Kick-out Substitution Process of Fe in InP, Applied Phys
2. Y. W. Zhao, H. W. Dong, J. M. Li and L. Y. Ling，Photoluminescence characteristics of InP annealed in phosphorus and iron phosphide ambiances
3. Y. W. Zhao, Z. Y. Dong, and Ch. J. Li，Approach for defect suppression and preparation of high quality semi-insulating InP， J
4. Y. W. Zhao, Z. Y. Dong, M. L. Duan, W. R. Sun, Y. P. Zeng, N. F. Sun and T. N. Sun, Annealing ambient controlled deep defect formation in InP, Eur. Phys
5. Youwen Zhao, Niefeng Sun, Hongwei Dong, Jinghua Jiao, Jianqun Zhao, Tongnian Sun and Lanying Lin,Characterization of Defects and Whole Wafer Uniformity of Annealed Undoped Semi-insulating InP Wafers, Material Sci
6. Y.W. Zhao, Z.Y. Dong, A.H. Deng ， Electron irradiation-induced defects in InP pre-annealed at high temperature， Materials Science in Semiconductor Processing
7. Y. W. Zhao, Y. L. Luo, S. Fung, and C. D. Beling, Native donor and compensation in Fe-doped LEC InP, J. Appl
8. Y. W. Zhao, S. Fung, Y. L. Luo, and C. D. Beling, Electrical conduction of annealed semi-insulating InP, J
9. Y. W. Zhao, S. Fung, C. D. Beling, N. F. Sun, T. N. Sun, X. D. Chen, and G. Y. Yang, Effects of annealing on the electrical properties of Fe-doped InP， J
10. Y. W. Zhao, X. L. Xu, M. Gong, S. Fung, et al. Formation of PIn defect in annealed undoped LEC InP, Appl. Phys
