基本介紹
- 中文名：潘拴
- 畢業院校：中國科學技術大學
- 學位/學歷：博士
- 職業：教師
- 專業方向：半導體發光材料及器件的表征和光電性能研究
- 職務：南昌大學材料科學與工程學院碩士生導師
- 任職院校：南昌大學材料科學與工程學院
- 性別：男
個人經歷,研究方向,學術成果,發表論文,
個人經歷
2003年、2009年於中國科學技術大學分別獲得學士、博士學位。
2009年-2010年在香港中文大學物理系從事研究工作。
2012年加入南昌大學國家矽基LED工程技術研究中心。
研究方向
半導體發光材料及器件的表征和光電性能研究。
學術成果
承擔課題情況：
主持完成國家自然科學基金青年基金項目：氮化鎵基LED材料的二次離子質譜定量分析；項目號21405076；經費25萬元；執行年限2015.1-2017.12。
發表論文
1.Effects of V-pits covering layer position on the optoelectronic performance ofInGaNgreen LEDs,Chen Xu,ChangdaZheng*,XiaomingWu,ShuanPan,XinganJiang,JunlinLiu andFengyiJiang,Journal of Semiconductors，2019, 40(5), 052801
2.EfficientInGaN-based yellow-light-emittingdiodes，FengyiJiang*,JianliZhang,LongquanXu,JieDing,GuangxuWang,XiaomingWu,XiaolanWang,ChunlanMo,ZhijueQuan, XingGuo,ChangdaZheng,ShuanPan, andJunlinLiu,Photonics Research, 2019,7(2),144-148
3.Effects of Hydrogen Treatment in Barrier on the Electroluminescence of GreenInGaN/GaNSingle-Quantum-Well Light-Emitting Diodes withV-Shaped Pits Grown on Si Substrates,Qing-fengWu, Sheng Cao*, Chun-lanMo, Jian-li Zhang, Xiao-lanWang,Zhi-jueQuan, Chang-da Zheng, Xiao-mingWu,ShuanPan,Guang-xuWang, 《中國物理快報(英文版)》，2018,0999-103
4.Performance enhancement of yellowInGaN-based multiple-quantum-well light-emitting diodes grown on Si substrates by optimizing theInGaN/GaNsuperlatticeinterlayer,XixiaTao,JunlinLiu*,JianliZhang,ChunlanMo,LongquanXu,JieDing,GuangxuWang,XiaolanWang,XiaomingWu,ZhijueQuan,ShuanPan,FangFang, andFengyiJiang,OpticalMaterials Express , 2019，8（5），1221-1230
5.Effects of the number of wells on the performance ofgreenInGaN/GaNLEDs with V-shape pits grown on Sisubstrates,QingfengWu,JianliZhang*,ChunlanMo,XiaolanWang,ZhijueQuan,XiaomingWu,ShuanPan,GuangxuWang,JunlinLiu,FengyiJiang,Superlatticesand Microstructures, 2018，114,89-96
6.The EfficiencyDroop ofInGaN-Based Green LEDs with DifferentSuperlatticeGrowth Temperatures on Si Substrates via Temperature-DependentElectroluminescence,Wei-Jing Qi, Long-QuanXu*, Chun-Lan Mo, Xiao-Lan Wang,JieDing,Guang-Xu Wang,ShuanPan, Jian-Li Zhang,Xiao-Ming Wu, Jun-Lin Liu, Feng-Yi Jiang,CHIN. PHYS. LETT.2017, 34(7),077301.
7.Effects of thickness ratio ofInGaNtoGaNinsuperlatticestrain relief layer on theoptoelectricalproperties ofInGaN-based green LEDs grown on Sisubstrates，WeijingQi,JianliZhang*,ChunlanMo,XiaolanWang,XiaomingWu,ZhijueQuan,GuangxuWang,ShuanPan,FangFang,JunlinLiu, andFengyiJiang，Jounalof Applied Physics,2017,122, 084504.
8.InGaN/GaN超晶格厚度對Si襯底GaN基藍光發光二極體光電性能的影響，齊維靖，張萌*，潘拴，王小蘭，張建立，江風益，《物理學報》,2016,65(7),077801.
9.Status ofGaN-based green light-emitting diodes,Liu Jun-Lin,Zhang Jian-Li*,WangGuang-Xu,Mo Chun-Lan,Xu Long-Quan,DingJie,QuanZhi-Jue,Wang Xiao-Lan,PanShuan,Zheng Chang-Da,Wu Xiao-Ming,Fang Wen-Qing,Jiang Feng-Yi,Chin. Phys. B,2015,24,(6),067804.
10.矽襯底高光效GaN基藍色發光二極體；江風益, 劉軍林* , 王立,熊傳兵, 方文卿, 莫春蘭, 湯英文, 王光緒, 徐龍權,丁傑, 王小蘭, 全知覺,張建立, 張萌, 潘拴, 鄭暢達；《中國科學:物理學 力學 天文學》；2015,45(6)，067302.
