殷紅(吉林大學教授)

殷紅(吉林大學教授)

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殷紅,吉林大學教授。

基本介紹

個人簡歷,研究興趣,代表性論文,

個人簡歷

殷紅,2000.06畢業於吉林大學物理系,2003.06於吉林大學超硬材料國家重點實驗室獲得理學碩士學位。2003.09在德國烏爾姆大學攻讀博士學位,於2007年11月獲得理學博士學位,隨後留校開展博士後研究。2008.05開始在比利時海塞爾特大學任長期研究員。2013.07以學術骨幹身份引進吉林大學超硬材料國家重點實驗室任副教授。主要研究領域為超硬多功能薄膜材料、低維納米材料等。已發表SCI和EI論文多篇,撰寫專著1部,授權專利多項。目前主持國家自然科學基金2項、教育部留學回國基金1項、省部級基金2項和人才引進基金1項。

研究興趣

超硬多功能薄膜、寬禁帶半導體、低維納米材料等

代表性論文

1. W. Gao, Y. Zhao, and H. Yin*, Lateral size selection of liquid exfoliated hexagonal boron nitride nanosheets, RSC Adv., 2018, 8, 5976.
2. W. Gao, Y. Zhao, H. Yin* and H. D. Li, Self-assembly based plasmonic nanoparticle array coupling with hexagonal boron nitride nanoshseets, Nanoscale, 2017, 9, 13004.
3. Y. Zhao, W. Gao, B. Xu, Y. A. Li, H. D. Li, G. R. G, and H. Yin*, Thick c-BN films deposited by radio frequency magnetron sputtering in argon/nitrogen gas mixture with additional hydrogen gas, Chin. Phys. B, 2016, 25, 106801.
4. H. Yin*, Heteroepitaxial growth of cubic boron nitride films on diamond(001) substrates and their n-type doping, Proc. SPIE 9748, Gallium Nitride Materials and Devices XI, 974805 (February 26, 2016); doi:10.1117/12.2208392.
5. H. Yin*, P. Ziemann, In-situ Si doping of heteroepitaxially grown c-BN thin films at different temperatures, RSC Adv., 2015, 5, 38170.
6. H. Yin*, P. Ziemann, Multiple delta doping of single crystal c-BN films heteroepitaxially grown on (001)diamonds, Appl. Phys. Lett., 2014, 104(25), 252111.
7. J. Li, H. D. Li*, H. Yin, Structural evolution, tunable electronic and magnetic properties of bare and semi-hydrogenated two-dimensional cubic boron nitride nanosheets, Chem. Phys. Lett., 2014, 610-611,198.
8. H. Yin*, Q. S. Wang, S. Geburt, S. Milz, B. Ruttens, G. Degutis, J. D’Haen, L. C. Shan, S. Punniyakoti, M. D’Olieslaeger, P. Wagner, C. Ronning, H. G. Boyen, Controlled synthesis of ultrathin ZnO nanowires using Micellar Au nanoparticles as catalysts, Nanoscale, 2013, 5, 7046.
9. H. Yin*, I. Pongrac, and P. Ziemann, Electronic transport in heavily Si doped cubic boron niride films expitaxially grown on diamond(001), J. Appl. Phys., 2008, 104, 023703.

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